AT24C256C_09 [ATMEL]

Two-wire Serial EEPROM; 两线串行EEPROM
AT24C256C_09
型号: AT24C256C_09
厂家: ATMEL    ATMEL
描述:

Two-wire Serial EEPROM
两线串行EEPROM

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器
文件: 总21页 (文件大小:416K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Features  
Low-voltage and Standard-voltage Operation  
VCC = 1.7V to 5.5V  
Internally Organized as 32,768 x 8  
Two-wire Serial Interface  
Schmitt Trigger, Filtered Inputs for Noise Suppression  
Bidirectional Data Transfer Protocol  
Two-wire  
Serial EEPROM  
1 MHz (5.0V, 2.7V, 2.5V), and 400 kHz (1.7V) Compatibility  
Write Protect Pin for Hardware and Software Data Protection  
64-byte Page Write Mode (Partial Page Writes Allowed)  
Self-timed Write Cycle (5 ms Max)  
256K (32,768 x 8)  
High Reliability  
Endurance: One Million Write Cycles  
Data Retention: 40 Years  
AT24C256C  
Lead-free/Halogen-free Devices Available  
8-lead JEDEC SOIC, 8-lead UDFN, 8-lead TSSOP, and 8-ball VFBGA Packages  
Die Sales: Wafer Form, Waffle Pack and Bumped Wafers  
Preliminary  
Description  
The AT24C256C provides 262,144 bits of serial electrically erasable and  
programmable read-only memory (EEPROM) organized as 32,768 words of 8 bits  
each. The device’s cascadable feature allows up to eight devices to share a common  
two-wire bus. The device is optimized for use in many industrial and commercial  
applications where low-power and low-voltage operation are essential. The devices  
are available in space-saving 8-lead JEDEC SOIC, 8-lead UDFN, 8-lead TSSOP, and  
8-ball VFBGA packages. In addition, this device operates from 1.7V to 5.5V.  
Table 1.  
Pin Configurations  
Function  
Pin Name  
8-lead SOIC  
8-lead TSSOP  
A0  
A1  
VCC  
1
2
3
4
8
7
6
5
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
A0 – A2  
SDA  
Address Inputs  
Serial Data  
WP  
WP  
A2  
SCL  
SDA  
A2  
SCL  
SDA  
GND  
GND  
SCL  
Serial Clock Input  
8-lead UDFN  
WP  
Write Protect  
Ground  
8-ball VFBGA  
VCC  
8
7
6
5
1
2
3
4
A0  
8
7
6
5
1
2
3
4
VCC  
WP  
A0  
A1  
A2  
GND  
WP  
SCL  
SDA  
A1  
A2  
SCL  
SDA  
GND  
GND  
Bottom View  
Bottom View  
8568A–SEEPR–9/09  
Absolute Maximum Ratings*  
*NOTICE: Stresses beyond those listed under “Absolute  
Maximum Ratings” may cause permanent  
damage to the device. This is a stress rating only  
and functional operation of the device at these or  
any other conditions beyond those indicated in  
the operational sections of this specification are  
not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect  
device reliability.  
Operating Temperature...........................• 55°C to +125°C  
Storage Temperature ............................• 65°C to + 150°C  
Voltage on Any Pin  
with Respect to Ground................................ 1.0 V +7.0V  
Maximum Operating Voltage.....................................6.25V  
DC Output Current ..................................................5.0 mA  
Figure 1.  
Block Diagram  
V
CC  
GND  
WP  
START  
STOP  
LOGIC  
SCL  
SDA  
SERIAL  
CONTROL  
LOGIC  
EN  
H.V. PUMP/TIMING  
DATA RECOVERY  
LOAD  
COMP  
DEVICE  
ADDRESS  
COMPARATOR  
LOAD  
INC  
A2  
A1  
A0  
R/W  
DATA WORD  
EEPROM  
ADDR/COUNTER  
Y DEC  
SERIAL MUX  
DOUT/ACK  
LOGIC  
DIN  
DOUT  
2
AT24C256C [Preliminary]  
8568A–SEEPR–9/09  
AT24C256C [Preliminary]  
1.  
Pin Descriptions  
SERIAL CLOCK (SCL): The SCL input is used to positive-edge clock data into each EEPROM device and  
negative-edge clock data out of each device.  
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is open drain driven and may be  
wire-ORed with any number of other open-drain or open-collector devices.  
DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1, and A0 pins are device address inputs that are hardwired  
(directly to GND or to VCC) for compatibility with other AT24Cxx devices. When the pins are hardwired, as many as eight  
256K devices may be addressed on a single bus system. (Device addressing is discussed in detail under “Device  
Addressing_Device_Addressing) A device is selected when a corresponding hardware and software match is  
true. If these pins are left floating, the A2, A1, and A0 pins will be internally pulled down to GND. However, due to  
capacitive coupling that may appear during customer applications, Atmel recommends always connecting the address  
pins to a known state. When using a pull-up resistor, Atmel recommends using 10kor less.  
WRITE PROTECT (WP): The write protect input, when connected to GND, allows normal write operations. When WP  
is connected directly to VCC, all write operations to the memory are inhibited. If the pin is left floating, the WP pin will be  
internally pulled down to GND. However, due to capacitive coupling that may appear during customer applications,  
Atmel recommends always connecting the WP pins to a known state. When using a pull-up resistor, Atmel  
recommends using 10kor less.  
3
8568A–SEEPR–9/09  
2.  
Memory Organization  
AT24C256C, 256K SERIAL EEPROM: The 256K is internally organized as 512 pages of 64 bytes each. Random word  
addressing requires a 15-bit data word address.  
Table 2.  
Pin Capacitance(1)  
Applicable over recommended operating range from:  
TA = 25°C, f = 1.0 MHz, VCC = +1.7V  
Symbol  
CI/O  
Test Condition  
Input/Output Capacitance (SDA)  
Input Capacitance (A0, A1, SCL)  
Max  
8
Units  
pF  
Conditions  
VI/O = 0V  
CIN  
6
pF  
VIN = 0V  
Note: 1. This parameter is characterized and is not 100% tested.  
Table 3.  
DC Characteristics  
Applicable over recommended operating range from:  
TAI = 40°C to +85°C, VCC = +1.7V to +5.5V (unless otherwise noted)  
Symbol  
VCC1  
ICC1  
ICC2  
Parameter  
Supply Voltage  
Supply Current  
Supply Current  
Test Condition  
Min  
Typ  
Max  
Units  
V
1.7  
5.5  
2.0  
3.0  
1.0  
VCC = 5.0V  
VCC = 5.0V  
VCC = 1.7V  
READ at 400 kHz  
1.0  
2.0  
mA  
mA  
μA  
WRITE at 400 kHz  
Standby Current  
(1.7V option)  
ISB1  
VIN = VCC or VSS  
VCC = 5.0V  
6.0  
3.0  
μA  
μA  
Input Leakage  
ILI  
V
IN = VCC or VSS  
0.10  
0.05  
Currentt VCC = 5.0V  
Output Leakage  
ILO  
VOUT = VCC or VSS  
3.0  
μA  
Currentt VCC = 5.0V  
VIL  
Input Low Level(1)  
Input High Level(1)  
Output Low Level  
Output Low Level  
-0.6  
VCC x 0.3  
VCC + 0.5  
0.4  
V
V
V
V
VIH  
VCC x 0.7  
VOL2  
VOL1  
VCC = 3.0V  
VCC = 1.7V  
IOL = 2.1 mA  
IOL = 0.15 mA  
0.2  
Note:  
1. VIL min and VIH max are reference only and are not tested.  
4
AT24C256C [Preliminary]  
8568A–SEEPR–9/09  
AT24C256C [Preliminary]  
Table 4.  
AC Characteristics (Industrial Temperature)  
Applicable over recommended operating range from:  
TAI = 40°C to +85°C, VCC = +1.7V to +5.5V, CL = 100 pF (unless otherwise noted). Test conditions are listed in Note 2.  
1.7-volt  
2.5, 5.0-volt  
Symbol  
Parameter  
Units  
Min  
Max  
Min  
Max  
fSCL  
Clock Frequency, SCL  
Clock Pulse Width Low  
Clock Pulse Width High  
Noise Suppression Time(1)  
400  
1000  
kHz  
μs  
tLOW  
1.3  
0.6  
0.4  
0.4  
tHIGH  
tI  
μs  
100  
0.9  
50  
ns  
tAA  
Clock Low to Data Out Valid  
Time the bus must be free before a new transmission can start(1)  
Start Hold Time  
0.05  
1.3  
0.6  
0.6  
0
0.05  
0.5  
0.55  
μs  
μs  
μs  
μs  
μs  
ns  
μs  
ns  
μs  
ns  
ms  
tBUF  
tHD.STA  
tSU.STA  
tHD.DAT  
tSU.DAT  
tR  
0.25  
0.25  
0
Start Set-up Time  
Data In Hold Time  
Data In Set-up Time  
100  
100  
Inputs Rise Time(1)  
0.3  
0.3  
tF  
Inputs Fall Time(1)  
300  
100  
tSU.STO  
tDH  
Stop Set-up Time  
0.6  
50  
0.25  
50  
Data Out Hold Time  
tWR  
Write Cycle Time  
5
5
Write  
Endurance(1)  
25°C, Page Mode, 3.3V  
1,000,000  
Cycles  
Note: 1. This parameter is ensured by characterization and is not 100% tested.  
2. AC measurement conditions:  
RL (connects to VCC): 1.3 kΩ (2.5V, 5.5V), 10 kΩ (1.7V)  
Input pulse voltages: 0.3 VCC to 0.7 VCC  
Input rise and fall times: 50 ns  
Input and output timing reference voltages: 0.5 VCC  
5
8568A–SEEPR–9/09  
3.  
Device Operation  
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external device. Data on the SDA pin  
may change only during SCL low time periods (refer to Figure 2). Data changes during SCL high periods will indicate a  
start or stop condition as defined below.  
Figure 2.  
Data Validity  
SDA  
SCL  
DATA STABLE  
DATA STABLE  
DATA  
CHANGE  
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition that must precede any other  
command (refer to Figure 3).  
Figure 3.  
Start and Stop Definition  
SDA  
SCL  
START  
STOP  
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a read sequence, the stop  
command will place the EEPROM in a standby power mode (refer to Figure 3).  
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the EEPROM in 8-bit words. The  
EEPROM sends a “0” during the ninth clock cycle to acknowledge that it has received each word.  
STANDBY MODE: The AT24C256C features a low-power standby mode that is enabled upon power-up and after the  
receipt of the stop bit and the completion of any internal operations.  
6
AT24C256C [Preliminary]  
8568A–SEEPR–9/09  
 
 
AT24C256C [Preliminary]  
SOFTWARE RESET: After an interruption in protocol, power loss or system reset, any 2-wire part can be protocol reset  
by following these steps:  
a) Create a start bit condition,  
b) Clock 9 cycles,  
c) Create another start bit followed by stop bit condition as shown below.  
The device is ready for next communication after above steps has been completed.  
Figure 4.  
Software Reset  
Dummy Clock Cycles  
Start bit  
Stop bit  
Start bit  
1
2
3
8
9
SCL  
SDA  
Figure 5.  
Bus Timing  
tHIGH  
tF  
tR  
tLOW  
tLOW  
SCL  
tSU.STA  
tHD.STA  
tHD.DAT  
tSU.DAT  
tSU.STO  
SDA IN  
tAA  
tDH  
tBUF  
SDA OUT  
Figure 6.  
Write Cycle Timing  
SCL  
SDA  
ACK  
8th BIT  
WORDn  
(1)  
t
wr  
START  
CONDITION  
STOP  
CONDITION  
7
8568A–SEEPR–9/09  
Note: 1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the  
internal clear/write cycle.  
Figure 7.  
Output Acknowledge  
1
8
9
SCL  
DATA IN  
DATA OUT  
START  
ACKNOWLEDGE  
8
AT24C256C [Preliminary]  
8568A–SEEPR–9/09  
AT24C256C [Preliminary]  
4.  
Device Addressing  
The 256K EEPROM requires an 8-bit device address word following a start condition to enable the chip for a read or  
write operation (refer to Figure 8). The device address word consists of a mandatory “1”, “0” sequence for the first four  
most significant bits as shown. This is common to all two-wire EEPROM devices.  
Figure 8.  
Device Addressing  
1
0
1
0
A2  
A1  
A0  
R/W  
MSB  
LSB  
The next three bits are the A2, A1, A0 device address bits to allow as many as eight devices on the same bus. These  
bits must compare to their corresponding hardwired input pins. The A2, A1, and A0 pins use an internal proprietary  
circuit that biases them to a logic low condition if the pins are allowed to float.  
The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high,  
and a write operation is initiated if this bit is low.  
Upon a compare of the device address, the EEPROM will output a “0”. If a compare is not made, the device will return  
to a standby state.  
DATA SECURITY: The AT24C256C has a hardware data protection scheme that allows the user to write protect the  
whole memory when the WP pin is at VCC.  
9
8568A–SEEPR–9/09  
 
 
5.  
Write Operations  
BYTE WRITE: A write operation requires two 8-bit data word addresses following the device address word and  
acknowledgment. Upon receipt of this address, the EEPROM will again respond with a “0” and then clock in the first  
8-bit data word. Following receipt of the 8-bit data word, the EEPROM will output a “0”. The addressing device, such as  
a microcontroller, must then terminate the write sequence with a stop condition. At this time the EEPROM enters an  
internally-timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during this write cycle and the  
EEPROM will not respond until the write is complete (refer to Figure 9).  
Figure 9.  
Byte Write  
Note:  
* = DON’T CARE bit  
PAGE WRITE: The 256K EEPROM is capable of 64-byte page writes.  
A page write is initiated the same way as a byte write, but the microcontroller does not send a stop condition after the  
first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data word, the microcontroller  
can transmit up to 63 more data words. The EEPROM will respond with a “0” after each data word received. The  
microcontroller must terminate the page write sequence with a stop condition (refer to Figure 10).  
Figure 10.  
Page Write  
Note:  
* = DON’T CARE bit  
The data word address lower six bits are internally incremented following the receipt of each data word. The higher  
data word address bits are not incremented, retaining the memory page row location. When the word address,  
internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If  
more than 64 data words are transmitted to the EEPROM, the data word address will “roll over” and previous data will  
be overwritten. The address “roll over” during write is from the last byte of the current page to the first byte of the same  
page.  
ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the EEPROM inputs are disabled,  
acknowledge polling can be initiated. This involves sending a start condition followed by the device address word. The  
read/write bit is representative of the operation desired. Only if the internal write cycle has completed will the EEPROM  
respond with a “0”, allowing the read or write sequence to continue.  
10  
AT24C256C [Preliminary]  
8568A–SEEPR–9/09  
 
 
AT24C256C [Preliminary]  
6.  
Read Operations  
Read operations are initiated the same way as write operations with the exception that the read/write select bit in the  
device address word is set to “1”. There are three read operations: current address read, random address read, and  
sequential read.  
CURRENT ADDRESS READ: The internal data word address counter maintains the last address accessed during the  
last read or write operation, incremented by one. This address stays valid between operations as long as the chip  
power is maintained. The address “roll over” during read is from the last byte of the last memory page, to the first byte  
of the first page.  
Once the device address with the read/write select bit set to “1” is clocked in and acknowledged by the EEPROM, the  
current address data word is serially clocked out. The microcontroller does not respond with an input “0” but does  
generate a following stop condition (refer to Figure 11).  
Figure 11.  
Current Address Read  
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data word address. Once the  
device address word and data word address are clocked in and acknowledged by the EEPROM, the microcontroller  
must generate another start condition. The microcontroller now initiates a current address read by sending a device  
address with the read/write select bit high. The EEPROM acknowledges the device address and serially clocks out the  
data word. The microcontroller does not respond with a “0” but does generate a following stop condition. (Refer to  
Figure 12)  
Figure 12.  
Random Read  
Note:  
* = DON’T CARE bit  
11  
8568A–SEEPR–9/09  
 
 
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random address read. After  
the microcontroller receives a data word, it responds with an acknowledge. As long as the EEPROM receives an  
acknowledge, it will continue to increment the data word address and serially clock out sequential data words. When  
the memory address limit is reached, the data word address will “roll over” and the sequential read will continue. The  
sequential read operation is terminated when the microcontroller does not respond with a “0” but does generate a  
following stop condition (refer to Figure 13).  
Figure 13.  
Sequential Read  
12  
AT24C256C [Preliminary]  
8568A–SEEPR–9/09  
 
AT24C256C [Preliminary]  
7.  
Ordering Information  
Ordering Code Detail  
7.1.  
A T 2 4 C 2 5 6 C - S S H L - B  
Atmel Designator  
Product Family  
Shipping Carrier Option  
B or blank = Bulk (tubes)  
T
= Tape and reel  
Operating Voltage  
L
= 1.7V to 5.5V  
Package Device Grade or  
Wafer/Die Thickness  
Device Density  
256 = 256K  
H
= Green, NiPdAu lead finish,  
Industrial Temperature Range  
(-40°C to +85°C)  
Device Revision  
U
= Green, matte Sn lead finish,  
Industrial Temperature Range  
(-40°C to +85°C)  
11 = 11mil wafer thickness  
Package Option  
SS = JEDEC SOIC  
X
= TSSOP  
MA = UDFN  
= wafer  
WT = die in tape and reel  
= UFBGA  
W
C
7.2.  
AT24C256C Ordering Codes  
Ordering Code  
Voltage  
Package  
Operating Range  
AT24C256C-SSHL-B(1)  
AT24C256C-SSHL-T(2)  
AT24C256C-XHL-B(1)  
AT24C256C-XHL-T(2)  
AT24C256C-MAHL-T(2)  
AT24C256C-CUL-T(2)  
1.7V to 5.5V  
1.7V to 5.5V  
1.7V to 5.5V  
1.7V to 5.5V  
1.7V to 5.5V  
1.7V to 5.5V  
8S1  
8S1  
8A2  
Lead-free/Halogen-free  
8A2  
Industrial Temperature (40°C to 85°C)  
8MA2  
8U2-1  
AT24C256C-W11(3)  
1.7V to 5.5V  
Die Sale  
Industrial Temperature (40°C to 85°C)  
Note: 1. “-B” denotes bulk.  
2. “-T” denotes tape & reel. SOIC = 4K per reel. TSSOP, VFBGA and UDFN = 5K per reel.  
3. Bumped die available upon request. Contact Atmel Marketing.  
Package Type  
8S1  
8A2  
8-lead, 0.150” Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)  
8-lead, 4.40mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)  
8-lead, 2.00 mm x 3.00 mm Body, 0.50 mm Pitch, Dual No Lead Package (UDFN)  
8-ball, die Ball Grid Array Package (VFBGA)  
8MA2  
8U2-1  
13  
8568A–SEEPR–9/09  
8.  
Part Marketing Scheme  
AT24C256C-SSHL  
Top Mark  
Seal Year  
Seal Week  
Y = SEAL YEAR  
WW = SEAL WEEK  
02 = Week 2  
04 = Week 4  
6: 2006  
7: 2007  
0: 2010  
--- --- --- --- --- --- --- ---  
1: 2011  
1
A
T
M
L
H
Y
W
W
8: 2008  
9: 2009  
2: 2012  
3: 2013  
:: : :::: :  
:: : :::: ::  
--- --- --- --- --- --- --- ---  
2
*
E
C
1
50 = Week 50  
52 = Week 52  
Lot Number  
--- --- --- --- --- --- --- ---  
Lot Number to Use ALL Characters in Marking  
BOTTOM MARK  
Pin 1 Indicator (Dot)  
No Bottom Mark  
AT24C256C-XHL  
Top Mark  
Pin 1 Indicator (Dot)  
--- --- --- ---  
Y = SEAL YEAR  
WW = SEAL WEEK  
02 = Week 2  
04 = Week 4  
6: 2006  
7: 2007  
0: 2010  
1: 2011  
*
H
Y
W
W
8: 2008  
9: 2009  
2: 2012  
3: 2013  
:: : :::: :  
:: : :::: ::  
--- --- --- --- ---  
2
E
C
1
50 = Week 50  
52 = Week 52  
--- --- --- --- ---  
Bottom Mark  
--- --- --- --- --- --- ---  
XX = Country of Origin  
X
X
--- --- --- --- --- --- ---  
A
A
A
A
A
A
A
<- Pin 1 Indicator  
AT24C256C-MAHL  
Seal Year  
Top Mark  
Seal Year  
Seal Week  
Y = SEAL YEAR  
WW = SEAL WEEK  
02 = Week 2  
04 = Week 4  
6: 2006  
7: 2007  
0: 2010  
1: 2011  
--- --- --- --- --- --- --- ---  
A
T
M
L
H
Y
W
W
8: 2008  
9: 2009  
2: 2012  
3: 2013  
:: : :::: :  
:: : :::: ::  
--- --- --- --- --- --- --- ---  
2
E
C
1
50 = Week 50  
52 = Week 52  
Lot Number  
--- --- --- --- --- --- --- ---  
*
Pin 1 Indicator (Dot)  
14  
AT24C256C [Preliminary]  
8568A–SEEPR–9/09  
AT24C256C [Preliminary]  
AT24C256C-CUL  
Top Mark  
Line 1 ----------->  
Line 2 ----------->  
2ECU  
YMTC  
<---  
Pin 1 This Corner  
Y = ONE DIGIT YEAR CODE  
4: 2004  
5: 2005  
6: 2006  
7: 2007  
5
8: 2008  
9: 2009  
M = SEAL MONTH (USE ALPHA DESIGNATOR A-L)  
A = JANUARY  
B = FEBRUARY  
" " """""""  
J = OCTOBER  
K = NOVEMBER  
L = DECEMBER  
TC = TRACE CODE  
15  
8568A–SEEPR–9/09  
9.  
Packaging Information  
8S1 – JEDEC SOIC  
Figure 1.  
8S1 – JEDECSOIC  
C
1
E
E1  
N
L
Top View  
End View  
COMMON DIMENSIONS  
(Unit of Measure = mm)  
e
B
A
MIN  
1.35  
0.10  
MAX  
1.75  
0.25  
NOM  
NOTE  
SYMBOL  
A
A1  
A1  
b
0.31  
0.17  
4.80  
3.81  
5.79  
0.51  
0.25  
5.00  
3.99  
6.20  
C
D
E1  
E
e
D
1.27 BSC  
L
0.40  
0˚  
1.27  
8˚  
Side View  
Note: These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions,  
tolerances, datums, etc.  
10/07/03  
DRAWING NO. REV.  
TITLE  
1150 E. Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906  
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing  
Small Outline (JEDEC SOIC)  
8S1  
B
R
16  
AT24C256C [Preliminary]  
8568A–SEEPR–9/09  
AT24C256C [Preliminary]  
8A2 – TSSOP  
Figure 14.  
8A2 – TSSOP  
3
2 1  
Pin 1 indicator  
this corner  
E1  
E
L1  
L
N
End View  
COMMON DIMENSIONS  
(Unit of Measure = mm)  
Top View  
MIN  
MAX  
NOM  
3.00  
NOTE  
SYMBOL  
A
D
2.90  
3.10  
2, 5  
b
E
6.40 BSC  
4.40  
E1  
A
4.30  
4.50  
1.20  
1.05  
0.30  
3, 5  
4
e
A2  
A2  
b
0.80  
0.19  
1.00  
D
e
0.65 BSC  
0.60  
Side View  
L
0.45  
0.75  
L1  
1.00 REF  
Notes:  
1. This drawing is for general information only. Refer to JEDEC D rawing MO-153, Variation AA, for proper dimension s,  
tolerances, datums, etc.  
2. Dimension D does not include mold Flash, prot rusions or gate burrs. Mold Flash, prot rusions and gate burrs shall not  
exceed 0.15 mm (0.006 in) per sid e.  
3. Dimension E1 does not include inter-lead Flash or prot rusions. Inter-lead Flash and prot rusions shall not exceed  
0.25 mm (0.010 in) per sid e.  
4. Dimension b does not include Dambar prot rusion. Allowable Dambar prot rusion shall be 0.08 mm total in excess of the  
b dimension at maxi mum material condition. Dambar cannot be located on the l ower radius of the foot. Minimum space  
between protrusion and adjacent lead is 0.07 mm .  
5. Dimension D and E1 to be dete rmined at Datum Plane H .  
05/30/02  
DRAWING NO. REV.  
8A2  
TITLE  
2325 Orchard Parkway  
San Jose, CA 95131  
8A2, 8-lead, 4.4 mm Body, Plastic  
Thin Shrink Small Outline Package (TSSOP)  
B
R
17  
8568A–SEEPR–9/09  
UDFN  
Figure 15.  
8MA2 – UDFN  
E
1
2
3
4
8
7
6
5
Pin 1 ID  
D
C
A2  
A
A1  
E2  
COMMON DIMENSIONS  
(Unit of Measure = mm)  
b (8x)  
MIN  
MAX  
NOM  
2.00 BSC  
3.00 BSC  
1.50  
NOTE  
SYMBOL  
8
1
2
3
4
D
E
Pin#1 ID  
(R0.10)  
7
6
5
0.35  
D2  
E2  
A
1.40  
1.20  
0.50  
0.0  
1.60  
1.40  
0.60  
0.05  
0.55  
D2  
1.30  
0.55  
A1  
A2  
C
0.02  
e (6x)  
0.152 REF  
0.35  
L (8x)  
K
L
0.30  
0.40  
e
0.50 BSC  
0.25  
b
0.18  
0.20  
0.30  
3
K
4/15/08  
TITLE  
GPC  
YNZ  
DRAWING NO. REV.  
8MA2, 8-pad,2 x 3 x 0.6 mm Body, Thermally  
Enhanced PlasticUltraThin Dual Flat No  
Lead Package (UDFN)  
Package Drawing Contact:  
packagedrawings@atmel.com  
8MA2  
A
18  
AT24C256C [Preliminary]  
8568A–SEEPR–9/09  
AT24C256C [Preliminary]  
8U2-1 – VFBGA  
Figure 16.  
8U2-1 – VFBGA  
COMMON DIMENSIONS  
(Unit of Measure = mm)  
MIN  
MAX  
SYMBOL  
NOM  
NOTE  
A
0.81 0.91 1.00  
0.15 0.20 0.25  
0.40 0.45 0.50  
0.25 0.30 0.35  
2.35 BSC  
A
A
b
1
2
D
E
e
Notes:  
3.73 BSC  
0.75 BSC  
1. This drawing is for general information.  
2. Dimension 'b' is measured at the maximum solder ball diameter.  
3. Solder ball composition shall be 95.5Sn-4.0Ag-.5Cu.  
e1  
d
0.74 REF  
0.75 BSC  
d1  
0.80 REF  
2/25/08  
GPC  
DRAWING NO.  
TITLE  
REV.  
8U2-1, 8 ball, 2.35 x 3.73 mm Body, 0.75 mm pitch  
Package Drawing Contact:•  
packagedrawings@atmel.com  
GWW  
8U2-1  
C
VFBGA Package (dBGA2)  
19  
8568A–SEEPR–9/09  
Appendix A. Revision History  
Doc. Rev.  
Date  
Comments  
8568A  
09/2009  
Initial document release  
20  
AT24C256C [Preliminary]  
8568A–SEEPR–9/09  
Headquarters  
International  
Atmel Corporation  
Atmel Asia  
Atmel Europe  
Atmel Japan  
2325 Orchard Parkway  
San Jose, CA 95131  
USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 487-2600  
Room 1219  
Le Krebs  
8, Rue Jean-Pierre Timbaud  
BP 309  
78054 Saint-Quentin-en-  
Yvelines Cedex  
France  
9F, Tonetsu Shinkawa Bldg.  
1-24-8 Shinkawa  
Chuo-ku, Tokyo 104-0033  
Japan  
Tel: (81) 3-3523-3551  
Fax: (81) 3-3523-7581  
Chinachem Golden Plaza  
77 Mody Road Tsimshatsui  
East Kowloon  
Hong Kong  
Tel: (852) 2721-9778  
Fax: (852) 2722-1369  
Tel: (33) 1-30-60-70-00  
Fax: (33) 1-30-60-71-11  
Product Contact  
Web Site  
Technical Support  
Sales Contact  
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s_eeprom@atmel.com  
www.atmel.com/contacts  
Literature Requests  
www.atmel.com/literature  
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8568A–SEEPR–9/09  

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