AT25640B-PU [ATMEL]
EEPROM, 4KX8, Serial, CMOS, PDIP8, 0.300 INCH, HALOGEN FREE AND LEAD FREE, PLASTIC, MS-001BA, DIP-8;
| 型号： | AT25640B-PU |
| 厂家： | 
ATMEL |
| 描述： | EEPROM, 4KX8, Serial, CMOS, PDIP8, 0.300 INCH, HALOGEN FREE AND LEAD FREE, PLASTIC, MS-001BA, DIP-8 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 |
| 文件： | 总21页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
• Serial Peripheral Interface (SPI) Compatible
• Supports SPI Modes 0 (0,0) and 3 (1,1)
• Low-voltage and Standard-voltage Operation
– 2.7 (VCC = 2.7V to 5.5V)
– 1.8 (VCC = 1.8V to 5.5V)
• 3.0 MHz Clock Rate (5V)
• 32-byte Page Mode
• Block Write Protection
– Protect 1/4, 1/2, or Entire Array
• Write Protect (WP) Pin and Write Disable Instructions for
both Hardware and Software Data Protection
• Self-timed Write Cycle (5 ms Typical)
• High-reliability
– Endurance: One Million Write Cycles
– Data Retention: 100 Years
• Automotive Grade Devices Available
• 8-lead PDIP, 8-lead JEDEC SOIC and 14-lead TSSOP Packages
SPI Serial
EEPROMs
8K (1024 x 8)
16K (2048 x 8)
32K (4096 x 8)
64K (8192 x 8)
Description
The AT25080/160/320/640 provides 8192/16384/32768/65536 bits of serial electri-
cally-erasable programmable read only memory (EEPROM) organized as
1024/2048/4096/8192 words of 8 bits each. The device is optimized for use in many
industrial and commercial applications where low-power and low-voltage operation
are essential. The AT25080/160/320/640 is available in space saving 8-lead PDIP, 8-
lead JEDEC SOIC and 14-lead TSSOP packages.
AT25080
AT25160
AT25320
AT25640
The AT25080/160/320/640 is enabled through the Chip Select pin (CS) and accessed
via a 3-wire interface consisting of Serial Data Input (SI), Serial Data Output (SO), and
Serial Clock (SCK). All programming cycles are completely self-timed, and no sepa-
rate ERASE cycle is required before WRITE.
8-lead PDIP
Pin Configuration
CS
SO
1
2
3
4
8
7
6
5
VCC
HOLD
SCK
SI
Pin Name
Function
WP
CS
Chip Select
GND
SCK
SI
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
8-lead SOIC
SO
CS
SO
1
2
3
4
8
7
6
5
VCC
HOLD
SCK
SI
GND
VCC
WP
WP
GND
Power Supply
Write Protect
Suspends Serial Input
No Connect
14-lead TSSOP
HOLD
NC
CS
1
2
3
4
5
6
7
14
13
12
11
10
9
VCC
HOLD
NC
SO
NC
NC
NC
DC
Don’t Connect
NC
NC
WP
GND
SCK
SI
8
0675M–SEEPR–9/03
BLOCK WRITE protection is enabled by programming the status register with one of four blocks of write protection. Sepa-
rate program enable and program disable instructions are provided for additional data protection. Hardware data protection
is provided via the WP pin to protect against inadvertent write attempts to the status register. The HOLD pin may be used to
suspend any serial communication without resetting the serial sequence.
Absolute Maximum Ratings*
Operating Temperature.................................. -55°C to +125°C
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Storage Temperature..................................... -65°C to +150°C
Voltage on Any Pin
with Respect to Ground .....................................-1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
Block Diagram
2
AT25080/160/320/640
0675M–SEEPR–9/03
AT25080/160/320/640
Pin Capacitance(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted).
Symbol
COUT
CIN
Test Conditions
Max
8
Units
pF
Conditions
VOUT = 0V
VIN = 0V
Output Capacitance (SO)
Input Capacitance(CS, SCK, SI, WP, HOLD)
6
pF
Note:
1. This parameter is characterized and is not 100% tested.
DC Characteristics(1)
Applicable over recommended operating range from: TAI = -40°C to +85°C, VCC = +1.8V to +5.5V, VCC = +1.8V to +5.5V
(unless otherwise noted).
Symbol
VCC1
Parameter
Test Condition
Min
1.8
2.7
4.5
Typ
Max
3.6
5.5
5.5
3.0
Units
V
Supply Voltage
Supply Voltage
Supply Voltage
Supply Current
VCC2
V
VCC3
V
ICC1
VCC = 5.0V at 1 MHz, SO = Open, Read
mA
VCC = 5.0V at 2 MHz, SO = Open,
Read, Write
ICC2
Supply Current
5.0
mA
ISB1
ISB2
ISB3
IIL
Standby Current
Standby Current
Standby Current
Input Leakage
VCC = 1.8V, CS = VCC
VCC = 2.7V, CS = VCC
VCC = 5.0V, CS = VCC
VIN = 0V to VCC
0.1
0.2
2.0
1.0
2.0
5.0
µA
µA
µA
µA
µA
V
-3.0
-3.0
IOL
Output Leakage
VIN = 0V to VCC, TAC = 0°C to 70°C
3.0
(1)
VIL
Input Low-voltage
Input High-voltage
Output Low-voltage
Output High-voltage
Output Low-voltage
Output High-voltage
-0.6
VCC x 0.3
VCC + 0.5
0.4
(1)
VIH
VCC x 0.7
V
VOL1
VOH1
VOL2
VOH2
I
OL = 3.0 mA
V
4.5V ≤ VCC ≤ 5.5V
1.8V ≤ VCC ≤ 3.6V
IOH = -1.6 mA
IOL = 0.15 mA
IOH = -100 µA
VCC - 0.8
VCC - 0.2
V
0.2
V
V
Note:
1. VIL min and VIH max are reference only and are not tested.
3
0675M–SEEPR–9/03
AC Characteristics
Applicable over recommended operating range from TAI = -40°C to +85°C, VCC = As Specified, CL = 1 TTL Gate and
100 pF (unless otherwise noted).
Symbol
Parameter
Voltage
Min
Max
Units
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
0
0
0
3.0
2.1
0.5
fSCK
SCK Clock Frequency
MHz
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
2
2
2
tRI
Input Rise Time
Input Fall Time
SCK High Time
SCK Low Time
CS High Time
µs
µs
ns
ns
ns
ns
ns
ns
ns
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
2
2
2
tFI
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
133
200
800
tWH
tWL
tCS
tCSS
tCSH
tSU
tH
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
133
200
800
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
250
250
1000
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
250
250
1000
CS Setup Time
CS Hold Time
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
250
250
1000
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
50
50
100
Data In Setup Time
Data In Hold Time
Hold Setup Time
Hold Hold Time
Output Valid
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
50
50
100
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
100
100
400
tHD
tCD
tV
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
200
200
400
ns
ns
ns
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
0
0
0
133
200
800
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
0
0
0
tHO
Output Hold Time
4
AT25080/160/320/640
0675M–SEEPR–9/03
AT25080/160/320/640
AC Characteristics (Continued)
Applicable over recommended operating range from TAI = -40°C to +85°C, VCC = As Specified, CL = 1 TTL Gate and
100 pF (unless otherwise noted).
Symbol
Parameter
Voltage
Min
Max
Units
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
0
0
0
100
100
100
tLZ
Hold to Output Low Z
ns
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
100
100
100
tHZ
Hold to Output High Z
Output Disable Time
ns
ns
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
250
250
1000
tDIS
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
5
10
20
tWC
Write Cycle Time
ms
Endurance(1)
5.0V, 25°C, Page Mode
1M
Write Cycles
Note:
1. This parameter is characterized and is not 100% tested.
5
0675M–SEEPR–9/03
Serial Interface
Description
MASTER: The device that generates the serial clock.
SLAVE: Because the Serial Clock pin (SCK) is always an input, the AT25080/160/320/640
always operates as a slave.
TRANSMITTER/RECEIVER: The AT25080/160/320/640 has separate pins designated for
data transmission (SO) and reception (SI).
MSB: The Most Significant Bit (MSB) is the first bit transmitted and received.
SERIAL OP-CODE: After the device is selected with CS going low, the first byte will be
received. This byte contains the op-code that defines the operations to be performed.
INVALID OP-CODE: If an invalid op-code is received, no data will be shifted into the
AT25080/160/320/640, and the serial output pin (SO) will remain in a high impedance state
until the falling edge of CS is detected again. This will reinitialize the serial communication.
CHIP SELECT: The AT25080/160/320/640 is selected when the CS pin is low. When the
device is not selected, data will not be accepted via the SI pin, and the serial output pin (SO)
will remain in a high impedance state.
HOLD: The HOLD pin is used in conjunction with the CS pin to select the
AT25080/160/320/640. When the device is selected and a serial sequence is underway,
HOLD can be used to pause the serial communication with the master device without resetting
the serial sequence. To pause, the HOLD pin must be brought low while the SCK pin is low.
To resume serial communication, the HOLD pin is brought high while the SCK pin is low (SCK
may still toggle during HOLD). Inputs to the SI pin will be ignored while the SO pin is in the
high impedance state.
WRITE PROTECT: The write protect pin (WP) will allow normal read/write operations when
held high. When the WP pin is brought low and WPEN bit is “1”, all write operations to the sta-
tus register are inhibited. WP going low while CS is still low will interrupt a write to the status
register. If the internal write cycle has already been initiated, WP going low will have no effect
on any write operation to the status register. The WP pin function is blocked when the WPEN
bit in the status register is “0”. This will allow the user to install the AT25080/160/320/640 in a
system with the WP pin tied to ground and still be able to write to the status register. All WP
pin functions are enabled when the WPEN bit is set to “1”.
6
AT25080/160/320/640
0675M–SEEPR–9/03
AT25080/160/320/640
SPI Serial Interface
7
0675M–SEEPR–9/03
Functional
Description
The AT25080/160/320/640 is designed to interface directly with the synchronous serial periph-
eral interface (SPI) of the 6805 and 68HC11 series of microcontrollers.
The AT25080/160/320/640 utilizes an 8-bit instruction register. The list of instructions and their
operation codes are contained in Table 1. All instructions, addresses, and data are transferred
with the MSB first and start with a high-to-low CS transition.
Table 1. Instruction Set for the AT25080/160/320/640
Instruction Name
WREN
Instruction Format
0000 X110
Operation
Set Write Enable Latch
Reset Write Enable Latch
Read Status Register
Write Status Register
Read Data from Memory Array
Write Data to Memory Array
WRDI
0000 X100
RDSR
0000 X101
WRSR
0000 X001
READ
0000 X011
WRITE
0000 X010
WRITE ENABLE (WREN): The device will power-up in the write disable state when VCC is
applied. All programming instructions must therefore be preceded by a Write Enable
instruction.
WRITE DISABLE (WRDI): To protect the device against inadvertent writes, the Write Disable
instruction disables all programming modes. The WRDI instruction is independent of the sta-
tus of the WP pin.
READ STATUS REGISTER (RDSR): The Read Status Register instruction provides access to
the status register. The READY/BUSY and Write Enable status of the device can be deter-
mined by the RDSR instruction. Similarly, the Block Write Protection bits indicate the extent of
protection employed. These bits are set by using the WRSR instruction.
Table 2. Status Register Format
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
WPEN
X
X
X
BP1
BP0
WEN
RDY
Table 3. Read Status Register Bit Definition
Bit
Definition
Bit 0 = 0 (RDY) indicates the device is READY. Bit 0 = 1 indicates the write cycle is
in progress.
Bit 0 (RDY)
Bit 1= 0 indicates the device is not WRITE ENABLED. Bit 1 = 1 indicates the
device is WRITE ENABLED.
Bit 1 (WEN)
Bit 2 (BP0)
Bit 3 (BP1)
See Table 4 on page 9.
See Table 4 on page 9.
Bits 4 - 6 are 0s when device is not in an internal write cycle.
Bit 7 (WPEN) See Table 5 on page 9.
Bits 0 - 7 are 1s during an internal write cycle.
8
AT25080/160/320/640
0675M–SEEPR–9/03
AT25080/160/320/640
WRITE STATUS REGISTER (WRSR): The WRSR instruction allows the user to select one of
four levels of protection. The AT25080/160/320/640 is divided into four array segments. One
quarter (1/4), one half (1/2), or all of the memory segments can be protected. Any of the data
within any selected segment will therefore be READ only. The block write protection levels and
corresponding status register control bits are shown in Table 4.
The three bits, BP0, BP1, and WPEN are nonvolatile cells that have the same properties and
functions as the regular memory cells (e.g. WREN, tWC, RDSR).
Table 4. Block Write Protect Bits
Status
Register Bits
Array Addresses Protected
Level
BP1
BP0
AT25080
AT25160
AT25320
AT25640
0
0
0
None
None
None
None
0300
-03FF
0600
-07FF
0C00
-0FFF
1800
-1FFF
1(1/4)
0
1
1
1
0
1
0200
-03FF
0400
-07FF
0800
-0FFF
1000
-1FFF
2(1/2)
3(All)
0000
-03FF
0000
-07FF
0000
-0FFF
0000
-1FFF
The WRSR instruction also allows the user to enable or disable the write protect (WP) pin
through the use of the Write Protect Enable (WPEN) bit. Hardware write protection is enabled
when the WP pin is low and the WPEN bit is “1”. Hardware write protection is disabled when
either the WP pin is high or the WPEN bit is “0”. When the device is hardware write protected,
writes to the Status Register, including the Block Protect bits and the WPEN bit, and the block-
protected sections in the memory array are disabled. Writes are only allowed to sections of the
memory which are not block-protected.
NOTE: When the WPEN bit is hardware write protected, it cannot be changed back to “0”, as
long as the WP pin is held low.
Table 5. WPEN Operation
Protected
Blocks
Unprotected
Blocks
Status
Register
WPEN
WP
X
WEN
0
0
1
1
X
X
0
1
0
1
0
1
Protected
Protected
Protected
Protected
Protected
Protected
Protected
Writable
Protected
Writable
Protected
Writable
Protected
Writable
X
Low
Low
High
High
Protected
Protected
Protected
Writable
9
0675M–SEEPR–9/03
READ SEQUENCE (READ): Reading the AT25080/160/320/640 via the SO (Serial Output)
pin requires the following sequence. After the CS line is pulled low to select a device, the
READ op-code is transmitted via the SI line followed by the byte address to be read (A15 - A0,
Refer to Table 6). Upon completion, any data on the SI line will be ignored. The data (D7 - D0)
at the specified address is then shifted out onto the SO line. If only one byte is to be read, the
CS line should be driven high after the data comes out. The READ sequence can be contin-
ued since the byte address is automatically incremented and data will continue to be shifted
out. When the highest address is reached, the address counter will roll over to the lowest
address allowing the entire memory to be read in one continuous READ cycle.
WRITE SEQUENCE (WRITE): In order to program the AT25080/160/320/640, two separate
instructions must be executed. First, the device must be write enabled via the Write Enable
(WREN) Instruction. Then a Write (WRITE) Instruction may be executed. Also, the address of
the memory location(s) to be programmed must be outside the protected address field location
selected by the Block Write Protection Level. During an internal write cycle, all commands will
be ignored except the RDSR instruction.
A Write Instruction requires the following sequence. After the CS line is pulled low to select the
device, the WRITE op-code is transmitted via the SI line followed by the byte address
(A15 - A0) and the data (D7 - D0) to be programmed (Refer to Table 6). Programming will start
after the CS pin is brought high. (The LOW-to-High transition of the CS pin must occur during
the SCK low-time immediately after clocking in the D0 (LSB) data bit.
The READY/BUSY status of the device can be determined by initiating a READ STATUS
REGISTER (RDSR) Instruction. If Bit 0 = 1, the WRITE cycle is still in progress. If Bit 0 = 0, the
WRITE cycle has ended. Only the READ STATUS REGISTER instruction is enabled during
the WRITE programming cycle.
The AT25080/160/320/640 is capable of a 32-byte PAGE WRITE operation. After each byte of
data is received, the five low order address bits are internally incremented by one; the high
order bits of the address will remain constant. If more than 32 bytes of data are transmitted,
the address counter will roll over and the previously written data will be overwritten. The
AT25080/160/320/640 is automatically returned to the write disable state at the completion of
a WRITE cycle.
NOTE: If the device is not Write enabled (WREN), the device will ignore the Write instruction
and will return to the standby state, when CS is brought high. A new CS falling edge is
required to re-initiate the serial communication.
Table 6. Address Key
Address
AN
AT25080
A9 - A0
AT25160
A10 - A0
AT25320
A11 - A0
A15 - A12
AT25640
A12 - A0
A15 - A13
Don't Care Bits
A15 - A10
A15 - A11
10
AT25080/160/320/640
0675M–SEEPR–9/03
AT25080/160/320/640
Timing Diagrams
Synchronous Data Timing (for Mode 0)
tCS
VIH
CS
VIL
tCSH
tCSS
VIH
tWH
tWL
SCK
VIL
tSU
VIH
tH
SI
VALID IN
VIL
tHO
tDIS
tV
VOH
VOL
HI-Z
HI-Z
SO
WREN Timing
WRDI Timing
11
0675M–SEEPR–9/03
RDSR Timing
CS
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
SCK
INSTRUCTION
SI
DATA OUT
HIGH IMPEDANCE
7
6
5
4
3
2
1
0
SO
MSB
WRSR Timing
CS
0
1
2
3
4
5
6
7
8
7
9
6
10 11 12 13 14 15
SCK
DATA IN
INSTRUCTION
SI
5
4
3
2
1
0
HIGH IMPEDANCE
SO
READ Timing
CS
0
1
2
3
4
5
6
7
8
9 10 11 20 21 22 23 24 25 26 27 28 29 30 31
SCK
BYTE ADDRESS
...
3 2 1 0
SI
INSTRUCTION
15 14 13
DATA OUT
HIGH IMPEDANCE
SO
7 6 5 4 3 2 1 0
MSB
12
AT25080/160/320/640
0675M–SEEPR–9/03
AT25080/160/320/640
WRITE Timing
CS
0 1 2 3 4 5 6 7 8 9 10 11 20 21 22 23 24 25 26 27 28 29 30 31
SCK
BYTE ADDRESS
...
DATA IN
INSTRUCTION
SI
15 14 13
3 2 1 0
7 6 5 4 3 2 1 0
HIGH IMPEDANCE
SO
HOLD Timing
CS
tCD
tCD
SCK
tHD
tHD
HOLD
SO
tHZ
tLZ
13
0675M–SEEPR–9/03
AT25080 Ordering Information
Ordering Code
Package
Operation Range
AT25080-10PI-2.7
AT25080N-10SI-2.7
AT25080T1-10TI-2.7
8P3
Industrial
8S1
(-40°C to 85°C)
14A2
AT25080-10PI-1.8
AT25080N-10SI-1.8
AT25080T1-10TI-1.8
8P3
Industrial
8S1
(-40°C to 85°C)
14A2
Note:
For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC Characteristics tables.
Package Type
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
14-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
Options
8P3
8S1
14A2
-2.7
-1.8
Low Voltage (2.7V to 5.5V)
Low Voltage (1.8V to 5.5V)
14
AT25080/160/320/640
0675M–SEEPR–9/03
AT25080/160/320/640
AT25160 Ordering Information
Ordering Code
Package
Operation Range
AT25160-10PI-2.7
AT25160N-10SI-2.7
AT25160T1-10TI-2.7
8P3
Industrial
8S1
(-40°C to 85°C)
14A2
AT25160-10PI-1.8
AT25160N-10SI-1.8
AT25160T1-10TI-1.8
8P3
Industrial
8S1
(-40°C to 85°C)
14A2
Note:
For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC Characteristics tables.
Package Type
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
14-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
Options
8P3
8S1
14A2
-2.7
-1.8
Low Voltage (2.7V to 5.5V)
Low Voltage (1.8V to 5.5V)
15
0675M–SEEPR–9/03
AT25320 Ordering Information
Ordering Code
Package
Operation Range
AT25320-10PI-2.7
AT25320N-10SI-2.7
AT25320T1-10TI-2.7
8P3
Industrial
8S1
(-40°C to 85°C)
14A2
Note:
For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC Characteristics tables.
Package Type
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
14-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
Options
8P3
8S1
14A2
-2.7
16
Low Voltage (2.7V to 5.5V)
AT25080/160/320/640
0675M–SEEPR–9/03
AT25080/160/320/640
AT25640 Ordering Information
Ordering Code
Package
Operation Range
AT25640-10PI-2.7
AT25640N-10SI-2.7
AT25640T1-10TI-2.7
8P3
Industrial
8S1
(-40°C to 85°C)
14A2
AT25640-10PI-1.8
AT25640N-10SI-1.8
AT25640T1-10TI-1.8
8P3
Industrial
8S1
(-40°C to 85°C)
14A2
Note:
For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC Characteristics tables.
Package Type
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
14-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
Options
8P3
8S1
14A2
-2.7
-1.8
Low Voltage (2.7V to 5.5V)
Low Voltage (1.8V to 5.5V)
17
0675M–SEEPR–9/03
Packaging Information
8P3 – PDIP
E
1
E1
N
Top View
c
eA
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
D
e
MIN
MAX
NOM
NOTE
SYMBOL
D1
A2 A
A
0.210
0.195
0.022
0.070
0.045
0.014
0.400
2
A2
b
0.115
0.014
0.045
0.030
0.008
0.355
0.005
0.300
0.240
0.130
0.018
0.060
0.039
0.010
0.365
5
6
6
b2
b3
c
D
3
3
4
3
b2
L
D1
E
b3
4 PLCS
0.310
0.250
0.325
0.280
b
E1
e
0.100 BSC
0.300 BSC
0.115
Side View
eA
L
4
0.130
0.1
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
01/09/02
TITLE
DRAWING NO.
REV.
2325 Orchard Parkway
San Jose, CA 95131
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
8P3
B
R
18
AT25080/160/320/640
0675M–SEEPR–9/03
AT25080/160/320/640
8S1 – JEDEC SOIC
C
1
E
E1
L
N
Top View
End View
e
B
COMMON DIMENSIONS
(Unit of Measure = mm)
A
MIN
1.35
0.10
MAX
1.75
0.25
NOM
NOTE
SYMBOL
A1
A
–
–
A1
b
0.31
0.17
4.80
3.81
5.79
–
0.51
0.25
5.00
3.99
6.20
C
D
E1
E
e
–
–
D
–
–
Side View
1.27 BSC
L
0.40
0˚
–
–
1.27
8˚
Note:
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
10/7/03
REV.
TITLE
DRAWING NO.
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
8S1
B
R
Small Outline (JEDEC SOIC)
19
0675M–SEEPR–9/03
14A2 – TSSOP
b
L
L1
E1
E
End View
e
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
MAX
NOM
NOTE
SYMBOL
Top View
D
D
4.90
5.00
6.40 BSC
4.40
5.10
2, 5
E
A
E1
A
4.30
–
4.50
1.20
1.05
0.30
3, 5
A2
–
A2
b
0.80
0.19
1.00
–
4
e
0.65 BSC
0.60
L
0.45
0.75
Side View
L1
1.00 REF
Notes: 1. This drawing is for general information only. Please refer to JEDEC Drawing MO-153, Variation AB-1, for
additional information.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate
burrs shall not exceed 0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not
exceed 0.25 mm (0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total
in excess of the b dimension at maximum material condition. Dambar cannot be located on the lower
radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
12/28/01
DRAWING NO. REV.
TITLE
2325 Orchard Parkway
San Jose, CA 95131
14A2,14-lead (4.4 x 5 mm Body), 0.65 Pitch,
Thin Shrink Small Outline Package (TSSOP)
14A2
A
R
20
AT25080/160/320/640
0675M–SEEPR–9/03
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