AT42QT1010-TSHR [ATMEL]

One-channel Touch Sensor IC; 单通道触摸传感器IC


型号：	AT42QT1010-TSHR
厂家：	ATMEL
描述：	One-channel Touch Sensor IC 单通道触摸传感器IC 传感器光电二极管 PC
文件：	总20页 (文件大小：254K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Features

• Number of Keys:

– One

– Configurable as either a single key or a proximity sensor

• Technology:

– Patented spread-spectrum charge-transfer (direct mode)

• Key outline sizes:

– 6 mm x 6 mm or larger (panel thickness dependent); widely different sizes and

shapes possible

One-channel

Touch Sensor

• Electrode design:

– Solid or ring electrode shapes

• PCB Layers required:

– One

• Electrode materials:

– Etched copper, silver, carbon, Indium Tin Oxide (ITO)

• Electrode substrates:

AT42QT1010

– PCB, FPCB, plastic films, glass

• Panel materials:

– Plastic, glass, composites, painted surfaces (low particle density metallic paints

possible)

• Panel thickness:

– Up to 12 mm glass, 6 mm plastic (electrode size and Cs dependent)

• Key sensitivity:

– Settable via capacitor (Cs)

• Interface:

– Digital output, active high

• Moisture tolerance:

– Good

• Power:

– 1.8V – 5.5V; 17 µA at 1.8V typical

• Package:

– 6-pin SOT23-6 RoHS compliant

• Signal processing:

– Self-calibration, auto drift compensation, noise filtering

• Applications:

– Control panels, consumer appliances, proximity sensor applications, toys,

lighting controls, mechanical switch or button,

• Patents:

– QTouch^®(patented charge-transfer method)

– HeartBeat^™(monitors health of device)

9541G–AT42–03/10

1. Pinout and Schematic

1.1

Pinout Configuration

OUT

VSS

SYNC/MODE

VDD

SNSK

SNS

1.2

Pin Descriptions

Table 1-1.

Name

OUT

Pin Listing

Type

Comments

If Unused, Connect To...

Output state

–

Vss

Supply ground

Sense pin

Power

–

SNSK

SNS

I/O

Cs + Key

–

Vdd

Pin is either SYNC/Slow/Fast Mode, depending on logic level

applied (see Section 3.1 on page 4)

SYNC

SYNC and Mode Input

Input only

I/O

Input and output

Ground or power

Output only, push-pull

1.3

Schematic

Figure 1-1. Basic Circuit Configuration

VDD

SENSE

ELECTRODE

VDD

OUT

SNSK

SNS

SYNC/MODE

VSS

Note: A bypass capacitor should be tightly wired

between Vdd and Vss and kept close to pin 5.

AT42QT1010

9541G–AT42–03/10

AT42QT1010

2. Overview of the AT42QT1010

2.1

Introduction

The AT42QT1010 (QT1010) is a digital burst mode charge-transfer (QT^™) sensor that is capable

of detecting near-proximity or touch, making it ideal for implementing touch controls.

With the proper electrode and circuit design, the self-contained digital IC will project a touch or

proximity field to several centimeters through any dielectric like glass, plastic, stone, ceramic,

and even most kinds of wood. It can also turn small metal-bearing objects into intrinsic sensors,

making them responsive to proximity or touch. This capability, coupled with its ability to

self-calibrate, can lead to entirely new product concepts.

The QT1010 is designed specifically for human interfaces, like control panels, appliances, toys,

lighting controls, or anywhere a mechanical switch or button may be found. It includes all

hardware and signal processing functions necessary to provide stable sensing under a wide

variety of changing conditions. Only a single low-cost capacitor is required for operation.

2.2

Basic Operation

Figure 1-1 on page 2 shows a basic circuit.

The QT1010 employs bursts of charge-transfer cycles to acquire its signal. Burst mode permits

power consumption in the microamp range, dramatically reduces RF emissions, lowers

susceptibility to EMI, and yet permits excellent response time. Internally the signals are digitally

processed to reject impulse noise, using a “consensus” filter which requires four consecutive

confirmations of a detection before the output is activated.

The QT switches and charge measurement hardware functions are all internal to the QT1010.

2.3

Electrode Drive

For optimum noise immunity, the electrode should only be connected to SNSK.

In all cases the rule Cs>>Cx must be observed for proper operation; a typical load capacitance

(Cx) ranges from 5-20 pF while Cs is usually about 2-50 nF.

Increasing amounts of Cx destroy gain, therefore it is important to limit the amount of stray

capacitance on both SNS terminals. This can be done, for example, by minimizing trace lengths

and widths and keeping these traces away from power or ground traces or copper pours.

The traces and any components associated with SNS and SNSK will become touch sensitive

and should be treated with caution to limit the touch area to the desired location.

A series resistor, Rs, should be placed in line with SNSK to the electrode to suppress ESD and

EMC effects.

2.4

Sensitivity

2.4.1

Introduction

The sensitivity on the QT1010 is a function of things like the value of Cs, electrode size and

capacitance, electrode shape and orientation, the composition and aspect of the object to be

sensed, the thickness and composition of any overlaying panel material, and the degree of

ground coupling of both sensor and object.

9541G–AT42–03/10

2.4.2

Increasing Sensitivity

In some cases it may be desirable to increase sensitivity; for example, when using the sensor

with very thick panels having a low dielectric constant, or when the device is used as a proximity

sensor. Sensitivity can often be increased by using a larger electrode or reducing panel

thickness. Increasing electrode size can have diminishing returns, as high values of Cx will

reduce sensor gain.

The value of Cs also has a dramatic effect on sensitivity, and this can be increased in value with

the trade-off of slower response time and more power. Increasing the electrode's surface area

will not substantially increase touch sensitivity if its diameter is already much larger in surface

area than the object being detected. Panel material can also be changed to one having a higher

dielectric constant, which will better help to propagate the field.

In the case of proximity detection, usually the object being detected is on an approaching hand,

so a larger surface area can be effective.

Ground planes around and under the electrode and its SNSK trace will cause high Cx loading

and destroy gain. The possible signal-to-noise ratio benefits of ground area are more than

negated by the decreased gain from the circuit, and so ground areas around electrodes are

discouraged. Metal areas near the electrode will reduce the field strength and increase Cx

loading and should be avoided, if possible. Keep ground away from the electrodes and traces.

2.4.3

2.4.4

Decreasing Sensitivity

In some cases the QT1010 may be too sensitive. In this case gain can be easily lowered further

by decreasing Cs.

Proximity Sensing

By increasing the sensitivity, the QT1010 can be used as a very effective proximity sensor,

allowing the presence of a nearby object (typically a hand) to be detected.

In this scenario, as the object being sensed is typically a hand, very large electrode sizes can be

used, which is extremely effective in increasing the sensitivity of the detector. In this case, the

value of Cs will also need to be increased to ensure improved sensitivity, as mentioned in

Section 2.4.2. Note that, although this affects the responsiveness of the sensor, it is less of an

issue in proximity sensing applications; in such applications it is necessary to detect simply the

presence of a large object, rather than a small, precise touch.

3. Operation Specifics

3.1

Run Modes

3.1.1

Introduction

The QT1010 has three running modes which depend on the state of the SYNC pin (high or low).

3.1.2

Fast Mode

The QT1010 runs in Fast mode if the SYNC pin is permanently high. In this mode the QT1010

runs at maximum speed at the expense of increased current consumption. Fast mode is useful

when speed of response is the prime design requirement. The delay between bursts in Fast

mode is approximately 1 ms, as shown in Figure 3-1.

AT42QT1010

9541G–AT42–03/10

AT42QT1010

Figure 3-1. Fast Mode Bursts (SYNC Held High)

SNSK

~1ms

SYNC

3.1.3

Low Power Mode

The QT1010 runs in Low Power (LP) mode if the SYNC pin is held low. In this mode it sleeps for

approximately 80 ms at the end of each burst, saving power but slowing response. On detecting

a possible key touch, it temporarily switches to Fast mode until either the key touch is confirmed

or found to be spurious (via the detect integration process). It then returns to LP mode after the

key touch is resolved, as shown in Figure 3-2 on page 5.

Figure 3-2. Low Power Mode (SYNC Held Low)

Fast detect

integrator

~80 ms

Sleep

SNSK

SYNC

OUT

3.1.4

SYNC Mode

It is possible to synchronize the device to an external clock source by placing an appropriate

waveform on the SYNC pin. SYNC mode can synchronize multiple QT1010 devices to each

other to prevent cross-interference, or it can be used to enhance noise immunity from low

frequency sources such as 50Hz or 60Hz mains signals.

The SYNC pin is sampled at the end of each burst. If the device is in Fast mode and the SYNC

pin is sampled high, then the device continues to operate in Fast mode (Figure 3-1 on page 5). If

SYNC is sampled low, then the device goes to sleep. From then on, it will operate in SYNC

mode (Figure 3-2). Therefore, to guarantee entry into SYNC mode the low period of the SYNC

signal should be longer than the burst length (Figure 3-3 on page 6).

9541G–AT42–03/10

Figure 3-3. SYNC Mode (Triggered by SYNC Edges)

sleep

Revert to Fast Mode

SNSK

SYNC

slow mode sleep period

SNSK

SYNC

sleep

Revert to Slow Mode

slow mode sleep period

However, once SYNC mode has been entered, if the SYNC signal consists of a series of short

pulses (>10 µs) then a burst will only occur on the falling edge of each pulse (Figure 3-4 on

page 6) instead of on each change of SYNC signal, as normal (Figure 3-3).

In SYNC mode, the device will sleep after each measurement burst (just as in LP mode) but will

be awakened by a change in the SYNC signal in either direction, resulting in a new

measurement burst. If SYNC remains unchanged for a period longer than the LP mode sleep

period (about 80 ms), the device will resume operation in either Fast or LP mode depending on

the level of the SYNC pin (Figure 3-3).

There is no detect integrator (DI) in SYNC mode (each touch is a detection) but the Max

On-duration will depend on the time between SYNC pulses; see Section 3.3 and Section 3.4.

Recalibration timeout is a fixed number of measurements so will vary with the SYNC period.

Figure 3-4. SYNC Mode (Short Pulses)

SNSK

>10us

SYNC

3.2

Threshold

The internal signal threshold level is fixed at 10 counts of change with respect to the internal

reference level, which in turn adjusts itself slowly in accordance with the drift compensation

mechanism.

The QT1010 employs a hysteresis dropout of two counts of the delta between the reference and

threshold levels.

AT42QT1010

9541G–AT42–03/10

AT42QT1010

3.3

Max On-duration

If an object or material obstructs the sense pad the signal may rise enough to create a detection,

preventing further operation. To prevent this, the sensor includes a timer which monitors

detections. If a detection exceeds the timer setting the sensor performs a full recalibration. This

is known as the Max On-duration feature and is set to ~60s (at 3V in LP mode). This will vary

slightly with Cs and if SYNC mode is used. As the internal timebase for Max On-duration is

determined by the burst rate, the use of SYNC can cause dramatic changes in this parameter

depending on the SYNC pulse spacing. For example, at 60Hz SYNC mode the Max On-duration

will be ~6s at 3V.

3.4

Detect Integrator

It is desirable to suppress detections generated by electrical noise or from quick brushes with an

object. To accomplish this, the QT1010 incorporates a detect integration (DI) counter that

increments with each detection until a limit is reached, after which the output is activated. If no

detection is sensed prior to the final count, the counter is reset immediately to zero. In the

QT1010, the required count is four. In LP mode the device will switch to Fast mode temporarily

in order to resolve the detection more quickly; after a touch is either confirmed or denied the

device will revert back to normal LP mode operation automatically.

The DI can also be viewed as a “consensus filter” that requires four successive detections to

create an output.

3.5

3.6

Forced Sensor Recalibration

The QT1010 has no recalibration pin; a forced recalibration is accomplished when the device is

powered up or after the recalibration timeout. However, supply drain is low so it is a simple

matter to treat the entire IC as a controllable load; driving the QT1010's Vdd pin directly from

another logic gate or a microcontroller port will serve as both power and “forced recalibration”.

The source resistance of most CMOS gates and microcontrollers is low enough to provide direct

power without problem.

Drift Compensation

Signal drift can occur because of changes in Cx and Cs over time. It is crucial that drift be

compensated for, otherwise false detections, nondetections, and sensitivity shifts will follow.

Drift compensation (Figure 3-5) is performed by making the reference level track the raw signal

at a slow rate, but only while there is no detection in effect. The rate of adjustment must be

performed slowly, otherwise legitimate detections could be ignored. The QT1010 drift

compensates using a slew-rate limited change to the reference level; the threshold and

hysteresis values are slaved to this reference.

Once an object is sensed, the drift compensation mechanism ceases since the signal is

legitimately high, and therefore should not cause the reference level to change.

9541G–AT42–03/10

Figure 3-5. Drift Compensation

Signal

Hysteresis

Threshold

Reference

Output

The QT1010's drift compensation is asymmetric; the reference level drift-compensates in one

direction faster than it does in the other. Specifically, it compensates faster for decreasing

signals than for increasing signals. Increasing signals should not be compensated for quickly,

since an approaching finger could be compensated for partially or entirely before even

approaching the sense electrode. However, an obstruction over the sense pad, for which the

sensor has already made full allowance, could suddenly be removed leaving the sensor with an

artificially elevated reference level and thus become insensitive to touch. In this latter case, the

sensor will compensate for the object's removal very quickly, usually in only a few seconds.

With large values of Cs and small values of Cx, drift compensation will appear to operate more

slowly than with the converse. Note that the positive and negative drift compensation rates are

different.

3.7

3.8

Response Time

The QT1010's response time is highly dependent on run mode and burst length, which in turn is

dependent on Cs and Cx. With increasing Cs, response time slows, while increasing levels of Cx

reduce response time. The response time will also be a lot slower in LP or SYNC mode due to a

longer time between burst measurements.

Spread Spectrum

The QT1010 modulates its internal oscillator by ±±.5 percent during the measurement burst.

This spreads the generated noise over a wider band, reducing emission levels. This also

reduces susceptibility since there is no longer a single fundamental burst frequency.

3.9

Output Features

3.9.1

Output

The output of the QT1010 is active-high upon detection. The output will remain active-high for

the duration of the detection, or until the Max On-duration expires, whichever occurs first. If a

Max On-duration timeout occurs first, the sensor performs a full recalibration and the output

becomes inactive (low) until the next detection.

3.9.2

HeartBeat^™Output

The QT1010 output has a HeartBeat “health” indicator superimposed on it in all modes. This

operates by taking the output pin into a three-state mode for 15 µs, once before every QT burst.

This output state can be used to determine that the sensor is operating properly, using one of

several simple methods, or it can be ignored.

AT42QT1010

9541G–AT42–03/10

AT42QT1010

The HeartBeat indicator can be sampled by using a pull-up resistor on the OUT pin (Figure 3-6),

and feeding the resulting positive-going pulse into a counter, flip flop, one-shot, or other circuit.

The pulses will only be visible when the chip is not detecting a touch.

Figure 3-6. Obtaining HeartBeat Pulses with a Pull-up Resistor

VDD

HeartBeat™ Pulses

VDD

OUT

SNSK

SNS

SYNC

VSS

If the sensor is wired to a microcontroller as shown in Figure 3-± on page 9, the microcontroller

can reconfigure the load resistor to either Vss or Vdd depending on the output state of the

QT1010, so that the pulses are evident in either state.

Figure 3-7. Using a Microcontroller to Obtain HeartBeat Pulses in Either Output State

PORT_M.x

OUT

SNSK

SNS

Microcontroller

PORT_M.y

SYNC

Electromechanical devices like relays will usually ignore the short HeartBeat pulse. The pulse

also has too low a duty cycle to visibly affect LEDs. It can be filtered completely if desired, by

adding an RC filter to the output, or if interfacing directly and only to a high-impedance CMOS

input, by doing nothing or at most adding a small noncritical capacitor from OUT to Vss.

3.9.3

Output Drive

The OUT pin is active high and can sink or source up to 2 mA. When a large value of Cs

(>20 nF) is used the OUT current should be limited to <1 mA to prevent gain-shifting side

effects, which happen when the load current creates voltage drops on the die and bonding

wires; these small shifts can materially influence the signal level to cause detection instability.

9541G–AT42–03/10

4. Circuit Guidelines

4.1

More Information

Refer to Application Note QTAN0002, Secrets of a Successful QTouch^®Design and the Touch

Sensors Design Guide (both downloadable from the Atmel^®website), for more information on

construction and design methods.

4.2

Sample Capacitor

Cs is the charge sensing sample capacitor. The required Cs value depends on the thickness of

the panel and its dielectric constant. Thicker panels require larger values of Cs. Typical values

are 2 nF to 50 nF depending on the sensitivity required; larger values of Cs demand higher

stability and better dielectric to ensure reliable sensing.

The Cs capacitor should be a stable type, such as X±R ceramic or PPS film. For more consistent

sensing from unit to unit, 5 percent tolerance capacitors are recommended. X±R ceramic types

can be obtained in 5 percent tolerance at little or no extra cost. In applications where high

sensitivity (long burst length) is required the use of PPS capacitors is recommended.

For battery powered operation a higher value sample capacitor is recommended (typical value

8.2 nF).

4.3

Power Supply and PCB Layout

See Section 5.2 on page 12 for the power supply range. At 3V current drain averages less than

500 µA in Fast mode.

If the power supply is shared with another electronic system, care should be taken to ensure that

the supply is free of digital spikes, sags, and surges which can adversely affect the QT1010. The

QT1010 will track slow changes in Vdd, but it can be badly affected by rapid voltage fluctuations.

It is highly recommended that a separate voltage regulator be used just for the QT1010 to isolate

it from power supply shifts caused by other components.

If desired, the supply can be regulated using a Low Dropout (LDO) regulator, although such

regulators often have poor transient line and load stability. See Application Note QTAN0002,

Secrets of a Successful QTouch™ Design for further information.

Parts placement: The chip should be placed to minimize the SNSK trace length to reduce low

frequency pickup, and to reduce stray Cx which degrades gain. The Cs and Rs resistors (see

Figure 1-1 on page 2) should be placed as close to the body of the chip as possible so that the

trace between Rs and the SNSK pin is very short, thereby reducing the antenna-like ability of

this trace to pick up high frequency signals and feed them directly into the chip. A ground plane

can be used under the chip and the associated discrete components, but the trace from the Rs

resistor and the electrode should not run near ground, to reduce loading.

For best EMC performance the circuit should be made entirely with SMT components.

AT42QT1010

9541G–AT42–03/10

AT42QT1010

Electrode trace routing: Keep the electrode trace (and the electrode itself) away from other

signal, power, and ground traces including over or next to ground planes. Adjacent switching

signals can induce noise onto the sensing signal; any adjacent trace or ground plane next to, or

under, the electrode trace will cause an increase in Cx load and desensitize the device.

Important Note: for proper operation a 100 nF (0.1 µF) ceramic bypass capacitor must be

used directly between Vdd and Vss, to prevent latch-up if there are substantial Vdd

transients; for example, during an ESD event. The bypass capacitor should be placed

very close to the Vss and Vdd pins.

4.4

Power On

On initial power up, the QT1010 requires approximately 100 ms to power on to allow power

supplies to stabilize. During this time the OUT pin state is not valid and should be ignored.

9541G–AT42–03/10

5. Specifications

5.1

Absolute Maximum Specifications

Operating temperature

-40°C to +85°C

-55°C to +125°C

0 to +6.5V

Storage temperature

VDD

Max continuous pin current, any control or drive pin

Short circuit duration to Vss, any pin

Short circuit duration to Vdd, any pin

Voltage forced onto any pin

±20 mA

Infinite

-0.6V to (V^DD+ 0.6) Volts

CAUTION: Stresses beyond those listed under Absolute Maximum Specifications may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at these or other conditions beyond those

indicated in the operational sections of this specification is not implied. Exposure to absolute maximum specification

conditions for extended periods may affect device reliability

5.2

Recommended Operating Conditions

V^DD

Short-term supply ripple + noise

+1.8 to 5.5V

±20 mV

Long-term supply stability

Cs value

±100 mV

2 to 50 nF

5 to 50 pF

Cx value

5.3

AC Specifications

Vdd = 3.0V, Cs = 4.± nF, Cx = 5 pF, Ta = recommended range, unless otherwise noted

Parameter

T^RC

Description

Recalibration time

Min

Typ

200

3.05

9.0

Max

Units

Notes

Cs, Cx dependent

T^PC

Charge duration

Transfer duration

µs

±±.5% spread spectrum variation

T^PT

µs

Time between end of burst and

start of the next (Fast mode)

TG1

TG2

TBL

1.2

Time between end of burst and

start of the next (LP mode)

Increases with decreasing V^DD

See Figure 5-1 on page 13

V^DD, Cs and Cx dependent. See

Section 4.2 for capacitor selection.

Burst length

2.45

T^R

Response time

100

µs

T^HB

HeartBeat pulse width

AT42QT1010

9541G–AT42–03/10

AT42QT1010

Figure 5-1. TG2 – Time Between Bursts (LP Mode)

Figure 5-2. T^BL– Burst Length

9541G–AT42–03/10

5.4

Signal Processing

Vdd = 3.0V, Cs = 4.± nF, Cx = 5 pF, Ta = recommended range, unless otherwise noted

Description

Min

Typ

Max

Units

counts

samples

Notes

Threshold differential

Hysteresis

Consensus filter length

(At 3V in LP mode) Will vary in

SYNC mode and with Vdd

Max on-duration

seconds

5.5

DC Specifications

Vdd = 3.0V, Cs = 4.± nF, Cx = 5 pF, Ta = recommended range, unless otherwise noted

Parameter

Description

Supply voltage

Min

Typ

Max

Units

Notes

V^DD

1.8

5.5

203.0

246.0

3±8.5

542.5

±29.0

1.8V

2.0V

3.0V

4.0V

5.0V

I^DD

Supply current, Fast mode

Supply current, LP mode

µA

16.5

19.5

34.0

51.5

±3.5

1.8V

2.0V

3.0V

4.0V

5.0V

I^DDI

V^DDS

Supply turn-on slope

Low input logic level

V/s

Required for proper start-up

0.2 Vdd

0.3 Vdd

Vdd = 1.8V – 2.4V

Vdd = 2.4V – 5.5V

VIL

0.± Vdd

0.6 Vdd

Vdd = 1.8V – 2.4V

Vdd = 2.4V – 5.5V

V^HL

High input logic level

V^OL

V^OH

I^IL

Low output voltage

0.5

OUT, 4 mA sink

High output voltage

Input leakage current

Load capacitance range

Acquisition resolution

2.3

OUT, 1 mA source

<0.05

µA

bits

C^X

A^R

AT42QT1010

9541G–AT42–03/10

AT42QT1010

5.6

Mechanical Dimensions

Pin #1 ID

0.10

SEATING PLANE

Side View

Top View

0.10

SEATING PLANE

0.25

SEATING PLANE

View A-A

SEE VIEW B

View B

COMMON DIMENSIONS

(Unit of Measure = mm)

MIN

–

MAX

1.45

0.15

1.30

3.00

1.75

0.55

NOM

–

NOTE

SYMBOL

–

0.90

2.80

2.60

1.50

0.30

–

2.90

2.80

1.60

0.45

0.95 BSC

–

Notes: 1. This package is compliant with JEDEC speciﬁcation MO-178 Variation AB

2. Dimension D does not include mold Flash, protrusions or gate burrs.

Mold Flash, protrustion or gate burrs shall not exceed 0.25 mm per end.

3. Dimension b does not include dambar protrusion. Allowable dambar

protrusion shall not cause the lead width to exceed the maximum

b dimension by more than 0.08 mm

0.30

0.09

0°

0.50

0.20

8°

–

4. Die is facing down after trim/form.

6/30/08

GPC

TAQ

DRAWING NO.

TITLE

REV.

6ST1, 6-lead, 2.90 x 1.60 mm Plastic Small Outline

Package Drawing Contact:

packagedrawings@atmel.com

6ST1

Package (SOT23)

9541G–AT42–03/10

5.7

Part Marking

Note: Samples of the AT42QT1010 may also be marked T10E.

Abbreviated

Part Number:

1010

Pin 1 ID

AT42QT1010

5.8

5.9

Part Number

Description

AT42QT1010-TSHR

6-pin SOT23 RoHS compliant IC

Moisture Sensitivity Level (MSL)

MSL Rating

Peak Body Temperature

Specifications

MSL1

260^oC

IPC/JEDEC J-STD-020

AT42QT1010

9541G–AT42–03/10

AT42QT1010

Appendix A. Migrating from QT100A

A.1 Introduction

This appendix describes the issues that should be considered when migrating designs from the

QT100A to the QT1010.

A.2 Cs Capacitor

A.3 PCB Layout

The Cs Capacitor should be increased in value, assuming that other factors, such as the voltage

level and electrode size, remain the same. For example, at 3V, a Cs value of 4.± nF should be

increased to 8.2 nF.

There are no PCB layout issues as the two devices share a common footprint with the same

pinouts.

A.4 Power Consumption

The QT1010 has a range of 1.8 to 5.5V for Vdd, compared with 2.0 to 5.5V on the QT100A.

Notice should also be taken of the differences in power consumption in both Fast and LP

operation modes.

9541G–AT42–03/10

Associated Documents

For additional information, refer to the following document (downloadable from the Touch

Technology area of Atmel’s website, www.atmel.com):

• Touch Sensors Design Guide

• QTAN0002 – Secrets of a Successful QTouch^®Design

Revision History

Revision No.

History

Revision A – May 2009

Revision B – August 2009

Revision C – August 2009

Revision D – January 2010

Revision E – January 2010



Initialrelease

Update for chip revision 2.2

Minor update for clarity

Power specifications updated for revision 2.4.1

Part markings updated



MSL specification revised

Other minor updates

Revision F – February 2010

Revision G – March 2010



Update for chip revision 2.6

Migration advice added

AT42QT1010

9541G–AT42–03/10

AT42QT1010

Notes

9541G–AT42–03/10

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1-24-8 Shinkawa

Chuo-ku, Tokyo 104-0033

Japan

Tel: (81) 3-3523-3551

Fax: (81) 3-3523-±581

Unit 01-05 & 16, 19/F

BEA Tower, Millennium City 5

418 Kwun Tong Road

Kwun Tong

Kowloon

Hong Kong

8, Rue Jean-Pierre Timbaud

BP 309

±8054 Saint-Quentin-en-

Yvelines Cedex

France

Tel: (852) 2245-6100

Fax: (852) 2±22-1369

Tel: (33) 1-30-60-±0-00

Fax: (33) 1-30-60-±1-11

Touch Technology Division

1 Mitchell Point

Ensign Way

Hamble

Southampton

Hampshire SO31 4RF

United Kingdom

Tel: (44) 23-8056-5600

Fax: (44) 23-8045-3939

Product Contact

Web Site

Technical Support

Sales Contact

www.atmel.com

touch@atmel.com

www.atmel.com/contacts

Literature Requests

www.atmel.com/literature

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9541G–AT42–03/10

AT42QT1010-TSHR [ATMEL]

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