AT93C46C-10SC-2.5 [ATMEL]

3-Wire Serial EEPROM; 3线串行EEPROM
AT93C46C-10SC-2.5
型号: AT93C46C-10SC-2.5
厂家: ATMEL    ATMEL
描述:

3-Wire Serial EEPROM
3线串行EEPROM

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器
文件: 总11页 (文件大小:159K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Features  
Low-Voltage and Standard-Voltage Operation  
– 5.0 (VCC = 4.5V to 5.5V)  
– 2.7 (VCC = 2.7V to 5.5V)  
– 2.5 (VCC = 2.5V to 5.5V)  
3-Wire Serial Interface  
Schmitt Trigger, Filtered Inputs for Noise Suppression  
2 MHz Clock Rate (5V) Compatibility  
Self-Timed Write Cycle (10 ms max)  
High Reliability  
– Endurance: 1 Million Write Cycles  
– Data Retention: 100 Years  
– ESD Protection: > 4000V  
3-Wire  
Serial EEPROM  
1K (64 x 16)  
Automotive Grade and Extended Temperature Devices Available  
8-Pin PDIP and JEDEC SOIC Packages  
Description  
The AT93C46C provides 1024 bits of serial electrically-erasable programmable read  
only memory (EEPROM) organized as 64 words of 16 bits each. The device is opti-  
mized for use in many industrial and commercial applications where low-power and  
low-voltage operation are essential. The AT93C46C is available in space saving 8-pin  
PDIP and 8-pin JEDEC packages.  
AT93C46C  
The AT93C46C is enabled through the Chip Select pin (CS), and accessed via a 3-  
wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift Clock  
(SK). Upon receiving a READ instruction at DI, the address is decoded and the data is  
clocked out serially on the data output pin DO. The WRITE cycle is completely self-  
timed and no separate ERASE cycle is required before WRITE. The WRITE cycle is  
only enabled when the part is in the ERASE/WRITE ENABLE state. When CS is  
brought “high” following the initiation of a WRITE cycle, the DO pin outputs the  
READY/BUSY status of the part.  
The AT93C46C is available in 4.5V to 5.5V, 2.7V to 5.5V, and 2.5V to 5.5V versions.  
8-Pin PDIP  
Pin Configurations  
Pin Name Function  
3-Wire, 1K  
Serial E2PROM  
CS  
SK  
DI  
1
2
3
4
8
7
6
5
VCC  
DC  
CS  
Chip Select  
NC  
SK  
Serial Data Clock  
Serial Data Input  
Serial Data Output  
Ground  
DO  
GND  
DI  
DO  
GND  
VCC  
NC  
DC  
8-Pin SOIC  
Power Supply  
No Connect  
CS  
1
8
7
6
5
VCC  
SK  
DI  
2
3
4
DC  
Don’t Connect  
NC  
DO  
GND  
Rev. 1122A–07/98  
Absolute Maximum Ratings*  
*NOTICE:  
Stresses beyond those listed under “Absolute  
Maximum Ratings” may cause permanent dam-  
age to the device. This is a stress rating only and  
functional operation of the device at these or any  
other conditions beyond those indicated in the  
operational sections of this specification is not  
implied. Exposure to absolute maximum rating  
conditions for extended periods may affect  
device reliability.  
Operating Temperature.................................. -55°C to +125°C  
Storage Temperature..................................... -65°C to +150°C  
Voltage on Any Pin  
with Respect to Ground.....................................-1.0V to +7.0V  
Maximum Operating Voltage........................................... 6.25V  
DC Output Current........................................................ 5.0 mA  
Block Diagram  
Pin Capacitance(1)  
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted).  
Test Conditions  
Max  
5
Units  
pF  
Conditions  
VOUT = 0V  
VIN = 0V  
COUT  
Output Capacitance (DO)  
CIN  
Input Capacitance (CS, SK, DI)  
5
pF  
Note:  
1. This parameter is characterized and is not 100% tested.  
AT93C46C  
2
AT93C46C  
DC Characteristics  
Applicable over recommended operating range from: TAI = -40°C to +85°C, VCC = +2.5V to +5.5V,  
TAC = 0°C to +70°C, VCC = +2.5V to +5.5V (unless otherwise noted).  
Symbol  
VCC1  
VCC2  
VCC3  
ICC  
Parameter  
Test Condition  
Min  
2.5  
2.7  
4.5  
Typ  
Max  
5.5  
Units  
V
Supply Voltage  
Supply Voltage  
Supply Voltage  
Supply Current  
5.5  
V
5.5  
V
READ at 1.0 MHz  
WRITE at 1.0 MHz  
CS = 0V  
0.5  
0.5  
2.0  
mA  
mA  
µA  
µA  
µA  
µA  
µA  
V
VCC = 5.0V  
2.0  
ISB1  
ISB2  
ISB3  
IIL  
Standby Current  
Standby Current  
Standby Current  
Input Leakage  
VCC = 2.5V  
14.0  
14.0  
35.0  
0.1  
20.0  
20.0  
50.0  
1.0  
VCC = 2.7V  
CS = 0V  
VCC = 5.0V  
CS = 0V  
VIN = 0V to VCC  
VIN = 0V to VCC  
IOL  
Output Leakage  
0.1  
1.0  
(1)  
VIL1  
Input Low Voltage  
Input High Voltage  
-0.6  
VCC x 0.3  
2.5V VCC 5.5V  
4.5V VCC 5.5V  
(1)  
VIH1  
V
CC x 0.7  
V
CC + 1  
VOL1  
VOH1  
Output Low Voltage  
Output High Voltage  
I
I
OL = 2.1 mA  
OH = -0.4 mA  
0.4  
V
V
V
V
2.4  
VOL2  
VOH2  
Output Low Voltage  
Output High Voltage  
IOL = 0.15 mA  
0.2  
2.5V VCC 2.7V  
IOH = -100 µA  
VCC - 0.2  
Note:  
1. VIL min and VIH max are reference only and are not tested.  
AC Characteristics  
Applicable over recommended operating range from TA = -40°C to + 85°C, VCC = +2.5V to + 5.5V,  
CL = 1 TTL Gate and 100 pF (unless otherwise noted).  
Symbol  
Parameter  
Test Condition  
Min  
Typ  
Max  
Units  
fSK  
SK Clock Frequency  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
2.5V VCC 5.5V  
0
0
0
2
1
0.5  
MHz  
tSKH  
tSKL  
tCS  
SK High Time  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
2.5V VCC 5.5V  
250  
250  
500  
ns  
SK Low Time  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
2.5V VCC 5.5V  
250  
250  
500  
ns  
Minimum CS Low Time  
CS Setup Time  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
2.5V VCC 5.5V  
250  
250  
500  
ns  
tCSS  
Relative to SK  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
2.5V VCC 5.5V  
50  
50  
100  
ns  
3
AC Characteristics (Continued)  
Applicable over recommended operating range from TA = -40°C to + 85°C, VCC = +2.5V to + 5.5V,  
CL = 1 TTL Gate and 100 pF (unless otherwise noted).  
Symbol  
Parameter  
Test Condition  
Min  
Typ  
Max  
Units  
tDIS  
DI Setup Time  
Relative to SK  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
2.5V VCC 5.5V  
100  
100  
200  
ns  
tCSH  
tDIH  
CS Hold Time  
DI Hold Time  
Relative to SK  
Relative to SK  
0
ns  
ns  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
2.5V VCC 5.5V  
100  
100  
200  
tPD1  
tPD0  
tSV  
Output Delay to ‘1’  
AC Test  
AC Test  
AC Test  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
2.5V VCC 5.5V  
250  
250  
500  
ns  
ns  
ns  
ns  
Output Delay to ‘0’  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
2.5V VCC 5.5V  
250  
250  
500  
CS to Status Valid  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
2.5V VCC 5.5V  
250  
250  
500  
tDF  
CS to DO in High Impedance  
AC Test  
CS = VIL  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
2.5V VCC 5.5V  
100  
100  
200  
tWP  
Write Cycle Time  
0.1  
10  
ms  
ms  
4.5V VCC 5.5V  
1
Endurance(1)  
5.0V, 25°C, Page Mode  
1 M  
Write Cycle  
Note:  
1. This parameter is characterized and is not 100% tested.  
Instruction Set for the AT93C46C  
Address  
Instruction  
READ  
SB  
1
Op Code  
x 16  
Comments  
10  
00  
11  
01  
00  
00  
00  
A5 - A0  
Reads data stored in memory, at specified address.  
Write enable must precede all programming modes.  
Erase memory location An - A0.  
EWEN  
ERASE  
WRITE  
ERAL  
1
11XXXX  
A5 - A0  
1
1
A5 - A0  
Writes memory location An - A0.  
1
10XXXX  
01XXXX  
00XXXX  
Erases all memory locations. Valid only at VCC = 4.5V to 5.5V.  
Writes all memory locations. Valid only at VCC = 4.5V to 5.5V.  
Disables all programming instructions.  
WRAL  
1
EWDS  
1
AT93C46C  
4
AT93C46C  
Functional Description  
The AT93C46C is accessed via a simple and versatile  
three-wire serial communication interface. Device opera-  
tion is controlled by seven instructions issued by the host  
processor. A valid instruction starts with a rising edge  
of CS and consists of a Start Bit (logic ‘1’) followed by the  
appropriate Op Code and the desired memory Address  
location.  
WRITE (WRITE): The Write (WRITE) instruction contains  
the 16 bits of data to be written into the specified memory  
location. The self-timed programming cycle tWP starts after  
the last bit of data is received at serial data input pin DI.  
The DO pin outputs the READY/BUSY status of the part if  
CS is brought high after being kept low for a minimum of  
250 ns (tCS). A logic ‘0’ at DO indicates that programming is  
still in progress. A logic ‘1’ indicates that the memory loca-  
tion at the specified address has been written with the data  
pattern contained in the instruction and the part is ready for  
further instructions. A Ready/Busy Status cannot be  
obtained if the CS is brought high after the end of the  
READ (READ): The Read (READ) instruction contains  
the Address code for the memory location to be read. After  
the instruction and address are decoded, data from the  
selected memory location is available at the serial output  
pin DO. Output data changes are synchronized with the ris-  
ing edges of serial clock SK. It should be noted that a  
dummy bit (logic ‘0’) precedes the 16-bit data output string.  
self-timed programming cycle, tWP  
.
ERASE ALL (ERAL): The Erase All (ERAL) instruction  
programs every bit in the memory array to the logic ‘1’ state  
and is primarily used for testing purposes. The DO pin out-  
puts the READY/BUSY status of the part if CS is brought  
high after being kept low for a minimum of 250 ns (tCS). The  
ERAL instruction is valid only at VCC = 5.0V ± 10%.  
ERASE/WRITE (EWEN): To assure data integrity, the  
part automatically goes into the Erase/Write Disable  
(EWDS) state when power is first applied. An Erase/Write  
Enable (EWEN) instruction must be executed first before  
any programming instructions can be carried out. Please  
note that once in the Erase/Write Enable state, program-  
ming remains enabled until an Erase/Write Disable  
(EWDS) instruction is executed or VCC power is removed  
from the part.  
WRITE ALL (WRAL): The Write All (WRAL) instruction  
programs all memory locations with the data patterns spec-  
ified in the instruction. The DO pin outputs the  
READY/BUSY status of the part if CS is brought high after  
being kept low for a minimum of 250 ns (tCS). The WRAL  
instruction is valid only at VCC = 5.0V ± 10%.  
ERASE (ERASE): The Erase (ERASE) instruction pro-  
grams all bits in the specified memory location to the logical  
‘1’ state. The self-timed erase cycle starts once the ERASE  
instruction and address are decoded. The DO pin outputs  
the READY/BUSY status of the part if CS is brought high  
after being kept low for a minimum of 250 ns (tCS). A logic  
‘1’ at pin DO indicates that the selected memory location  
has been erased, and the part is ready for another instruc-  
tion.  
ERASE/WRITE DISABLE (EWDS): To protect against  
accidental data disturb, the Erase/Write Disable (EWDS)  
instruction disables all programming modes and should be  
executed after all programming operations. The operation  
of the READ instruction is independent of both the EWEN  
and EWDS instructions and can be executed at any time.  
5
Timing Diagrams  
Synchronous Data Timing  
Note:  
1. This is the minimum SK period.  
AT93C46C  
6
AT93C46C  
Organization Key for Timing Diagrams  
AT93C46C  
I/O  
AN  
DN  
x 16  
A5  
D15  
READ Timing  
tCS  
CS  
SK  
DI  
...  
AN  
1
1
0
A0  
0
DN ...  
D0  
DO  
EWEN Timing(1)  
Note:  
1. Requires a minimum of nine clock cycles.  
EWDS Timing(1)  
Note:  
1. Requires a minimum of nine clock cycles.  
7
WRITE Timing  
WRAL Timing(1)(2)  
Notes: 1. Valid only at VCC = 4.5V to 5.5V.  
2. Requires a minimum of nine clock cycles.  
AT93C46C  
8
AT93C46C  
ERASE Timing  
TERAL Timing(1)  
Note:  
1. Valid only at VCC = 4.5V to 5.5V.  
9
Ordering Information  
tWP (max)  
ICC (max)  
ISB (max)  
fMAX  
(ms)  
(µA)  
(µA)  
(kHz)  
Ordering Code  
Package  
Operation Range  
10  
10  
10  
10  
10  
10  
2000  
2000  
800  
50.0  
50.0  
20.0  
20.0  
20.0  
20.0  
2000  
2000  
1000  
1000  
500  
AT93C46C-10PC  
AT93C46C-10SC  
8P3  
8S1  
Commercial  
(0°C to 70°C)  
AT93C46C-10PI  
AT93C46C-10SI  
8P3  
8S1  
Industrial  
(-40°C to 85°C)  
AT93C46C-10PC-2.7  
AT93C46C-10SC-2.7  
8P3  
8S1  
Commercial  
(0°C to 70°C)  
800  
AT93C46C-10PI-2.7  
AT93C46C-10SI-2.7  
8P3  
8S1  
Industrial  
(-40°C to 85°C)  
600  
AT93C46C-10PC-2.5  
AT93C46C-10SC-2.5  
8P3  
8S1  
Commercial  
(0°C to 70°C)  
600  
500  
AT93C46C-10PI-2.5  
AT93C46C-10SI-2.5  
8P3  
8S1  
Industrial  
(-40°C to 85°C)  
Package Type  
8P3  
8-Lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)  
8-Lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)  
Options  
8S1  
Blank  
-2.7  
Standard Device (4.5V to 5.5V)  
Low Voltage (2.7V to 5.5V)  
-2.5  
Low Voltage (2.5V to 5.5V)  
AT93C46C  
10  
AT93C46C  
Packaging Information  
8P3, 8-Lead, 0.300" Wide, Plastic Dual Inline  
Package (PDIP)  
8S1, 8-Lead, 0.150" Wide, Plastic Gull Wing Small  
Outline (JEDEC SOIC)  
Dimensions in Inches and (Millimeters)  
JEDEC STANDARD MS-001 BA  
Dimensions in Inches and (Millimeters)  
.400 (10.16)  
.355 (9.02)  
.020 (.508)  
.013 (.330)  
PIN  
1
.244 (6.20)  
.228 (5.79)  
.157 (3.99)  
.150 (3.81)  
.280 (7.11)  
.240 (6.10)  
PIN 1  
.037 (.940)  
.027 (.690)  
.300 (7.62) REF  
.210 (5.33) MAX  
.050 (1.27) BSC  
.100 (2.54) BSC  
SEATING  
PLANE  
.196 (4.98)  
.189 (4.80)  
.068 (1.73)  
.053 (1.35)  
.015 (.380) MIN  
.150 (3.81)  
.115 (2.92)  
.022 (.559)  
.014 (.356)  
.070 (1.78)  
.045 (1.14)  
.010 (.254)  
.004 (.102)  
.325 (8.26)  
.300 (7.62)  
0
8
0
REF  
.010 (.254)  
.007 (.203)  
REF  
15  
.012 (.305)  
.008 (.203)  
.430 (10.9) MAX  
.050 (1.27)  
.016 (.406)  
11  

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