ATA2526P733-DDW [ATMEL]
Low-voltage IR Receiver ASSP; 低电压IR接收器ASSP
| 型号： | ATA2526P733-DDW |
| 厂家： | 
ATMEL |
| 描述： | Low-voltage IR Receiver ASSP |
| 文件： | 总14页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
• No External Components Except PIN Diode
• Supply-voltage Range: 2.7V to 5.5V
• High Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong
Signal Adaption (ATC)
• Automatic Supply Voltage Adaptation
• High Immunity against Disturbances from Daylight and Lamps
• Small Size and Innovative Pad Layout
• Available for Carrier Frequencies between 33 kHz to 40 kHz and 56 kHz; adjusted by
Zener-Diode Fusing ±2.5%
Low-voltage
IR Receiver
ASSP
• TTL and CMOS Compatible
Applications
• Home Entertainment Applications
• Home Appliances
• Remote Control Equipment
ATA2526
1. Description
The IC ATA2526 is a complete IR receiver for data communication developed and
optimized for use in carrier-frequency-modulated transmission applications. The IC
combines small size with high sensitivity as well as high suppression of noise from
daylight and lamps. An innovative and patented pad layout offers unique flexibility for
assembly of IR receiver modules. The ATA2526 is available with standard frequencies
(33, 36, 37, 38, 40, 56 kHz) and 3 different noise suppression regulation types (stan-
dard, lamp, short burst) covering requirements of different high-volume remote control
solutions (please refer to selection guide available for ATA2525/ATA2526). The
ATA2526 operates in a supply voltage range of 2.7V to 5.5V.
The function of the ATA2526 can be described using the block diagram of Figure 1-1
on page 2. The input stage meets two main functions. First it provides a suitable bias
voltage for the PIN diode. Secondly the pulsed photo-current signals are transformed
into a voltage by a special circuit which is optimized for low noise applications. After
amplification by a Controlled Gain Amplifier (CGA) the signals have to pass a tuned
integrated narrow bandpass filter with a center frequency f0 which is equivalent to the
chosen carrier frequency of the input signal The demodulator is used first to convert
the input burst signal to a digital envelope output pulse and to evaluate the signal
information quality, i.e., unwanted pulses will be suppressed at the output pin. All this
is done by means of an integrated dynamic feedback circuit which varies the gain as a
function of the present environmental conditions (ambient light, modulated lamps
etc.). Other special features are used to adapt to the current application to secure best
transmission quality.
4905D–AUTO–10/06
Figure 1-1. Block Diagram
VS
IN
OUT
CGA and
filter
Micro-
controller
Input
Demodulator
AGC/ATC and digital
control
Oscillator
Carrier frequency f0
ATA2526
Modulated IR signal
min 6 or 10 pulses
GND
2
ATA2526
4905D–AUTO–10/06
ATA2526
2. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameter
Symbol
VS
Value
–0.3 to +6
3
Unit
V
Supply voltage
Supply current
IS
mA
V
Input voltage
VIN
IIN
–0.3 to VS
0.75
Input DC current at VS = 5V
Output voltage
mA
V
VO
–0.3 to VS
10
Output current
IO
mA
°C
Operating temperature
Storage temperature
Power dissipation at Tamb = 25°C
Tamb
Tstg
Ptot
–25 to +85
–40 to +125
°C
mW
30
3. Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient TSSOP8
RthJA
110
K/W
4. Electrical Characteristics, 3-V Operation
Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified.
No. Parameters
Supply
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1
1.1 Supply-voltage range
1.2 Supply current
1
1
VS
IS
2.7
0.7
3.0
0.9
3.3
1.3
V
C
B
IIN =0
mA
2
Output
T
amb = 25°C
2.1 Internal pull-up resistor
1, 3
RPU
40
kΩ
A
See Figure 6-10 on page 10
R2 = 1.4 kΩ
See Figure 6-10 on page 10
2.2 Output voltage low
2.3 Output voltage high
2.4 Output current clamping
3, 6
3, 1
3, 6
VOL
VOH
IOCL
250
VS
mV
V
B
B
B
VS – 0.25
R2 = 0
8
mA
See Figure 6-10 on page 10
3
Input
V
IN = 0
3.1 Input DC current
5
5
IIN_DCMAX
IIN_DCMAX
–150
µA
µA
C
B
See Figure 6-10 on page 10
Input DC current
3.2
VIN = 0; VS = 3V
See Figure 6-3 on page 7 Tamb = 25°C
–350
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
3
4905D–AUTO–10/06
4. Electrical Characteristics, 3-V Operation (Continued)
Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified.
No. Parameters
Minimum detection
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Test signal:
3.3 threshold current
See Figure 6-9 on page 10
3
IEemin
–800
pA
B
See Figure 6-1 on page 7 VS = 3V
Tamb= 25°C, IIN_DC=1 µA
square pp
burst N = 16
f = f0; tPER = 10 ms
Figure 6-8 on page 9
BER = 50(1)
Minimum detection
threshold current with AC
3.4 current disturbance
IIN_AC100 =
3
3
IEemin
–1600
pA
µA
C
D
3 µA at 100 Hz
Test signal:
See Figure 6-9 on page 10
VS = 3V, Tamb = 25°C
IIN_DC = 1 µA
square pp
Maximum detection
3.5 threshold current with
IEemax
–200
VIN > 0V
burst N = 16
f = f0; tPER = 10 ms
Figure 6-8 on page 9
BER = 5%(1)
4
Controlled Amplifier and Filter
Maximum value of
variable gain (CGA)
4.1
VS = 3V, Tamb = 25°C
GVARMAX
GVARMIN
GMAX
f03V_FUSE
f03V
50
–6
72
f0
dB
dB
dB
%
D
D
D
A
C
C
C
Minimum value of variable
gain (CGA)
4.2
4.3
4.4
4.5
4.6
VS = 3V, Tamb = 25°C
VS = 3V, Tamb = 25°C
VS = 3V, Tamb = 25°C
Total internal
amplification(2)
Center frequency fusing
accuracy of bandpass
–2.5
–5.5
–4.5
+2.5
+3.5
+3.0
Overall accuracy center
frequencyofbandpass
f0
%
Overall accuracy center
frequencyofbandpass
Tamb = 0 to 70°C
f03V
f0
%
–3 dB; f0 = 38 kHz;
See Figure 6-7 on page 9
4.7 BPF bandwidth
B
3.8
kHz
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
4
ATA2526
4905D–AUTO–10/06
ATA2526
5. Electrical Characteristics, 5-V Operation
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
5
Supply
5.1
5.2
6
Supply-voltage range
Supply current
Output
1
1
VS
IS
4.5
0.9
5.0
1.2
5.5
1.6
V
C
B
IIN =0
mA
Tamb = 25°C
6.1
Internal pull-up resistor
See Figure 6-10 on page
10
1, 3
RPU
40
kW
A
R2 = 2.4 kΩ
6.2
6.3
6.4
7
Output voltage low
Output voltage high
See Figure 6-10 on page
10
3, 6
3, 1
3, 6
VOL
VOH
IOCL
250
VS
mV
V
B
B
B
VS – 0.25
R2 = 0
Output current clamping See Figure 6-10 on page
10
8
mA
Input
VIN = 0
7.1
Input DC current
Input DC-current
See Figure 6-10 on page
10
5
5
3
IIN_DCMAX
IIN_DCMAX
IEemin
–400
µA
µA
pA
C
B
B
VIN = 0; VS = 5V
7.2
7.3
–700
See Figure 6-4 on page 8 Tamb = 25°C
Min. detection threshold Test signal:
current
See Figure 6-9 on page
–1000
See Figure 6-2 on page 7 10
VS = 5V
Tamb = 25°C
IIN_DC = 1 µA
square pp
burst N = 16
f = f0; tPER = 10 ms
Figure 6-8 on page 9
BER = 50(1)
Min. detection threshold
current with AC current
disturbance IIN_AC100 =
3 µA at 100 Hz
7.4
3
IEemin
–2500
pA
C
Test signal:
See Figure 6-9 on page
10
VS = 5V, Tamb = 25°C
Max. detection threshold
current with VIN > 0V
IIN_DC = 1 µA
square pp
7.5
3
IEemax
–500
µA
D
burst N = 16
f = f0; tPER = 10 ms
Figure 6-8 on page 9
BER = 5%(1)
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
5
4905D–AUTO–10/06
5. Electrical Characteristics, 5-V Operation (Continued)
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
8
Controlled Amplifier and Filter
Maximum value of
variable gain (CGA)
8.1
VS = 5V, Tamb = 25°C
VS = 5V, Tamb = 25°C
VS = 5V, Tamb = 25°C
GVARMAX
GVARMIN
GMAX
50
–6
72
dB
dB
dB
D
D
D
Minimum value of variable
gain (CGA)
8.2
8.3
Total internal
amplification(2)
Resulting center
frequency fusing
accuracy
f0 fused at VS = 3V
VS = 5V, Tamb = 25°C
f03V-FUSE
+ 0.5
8.4
f05V
%
C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
5.1
Reliability
Electrical qualification (1000h at 150°C) in molded SO8 plastic package
6
ATA2526
4905D–AUTO–10/06
ATA2526
6. Typical Electrical Curves at Tamb = 25°C
Figure 6-1. IEemin versus IIN_DC, VS = 3V
100
VS = 3V
f = f0
10
1
0
0
1
10
100
1000
1000
1000
IIN_DC (µA)
Figure 6-2.
I
Eemin versus IIN_DC, VS = 5V
100
VS = 5V
f = f0
10
1
0
0
1
10
100
IIN_DC (µA)
Figure 6-3.
V
IN versus IIN_DC, VS = 3V
3.5
VS = 3V
f = f0
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.1
1
10
100
IIN_DC (µA)
7
4905D–AUTO–10/06
Figure 6-4. VIN versus IIN_DC, VS = 5V
3.5
VS = 5V
f = f0
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.1
1
10
100
1000
IIN_DC (µA)
Figure 6-5. Data Transmission Rate, VS = 3V
4000
3500
3000
3060
2000
1333
Short burst
type
2500
2000
1500
1000
500
2077
1357
Standard
type
Lamp type
905
0
30
35
40
45
50
55
60
f0 (kHz)
Figure 6-6. Data Transmission Rate, VS = 5V
4000
3500
3415
Short burst
type
3000
2500
2000
1500
1000
500
2317
1479
952
2179
1404
Standard
type
Lamp type
0
30
35
40
45
50
55
60
f0 (kHz)
8
ATA2526
4905D–AUTO–10/06
ATA2526
Figure 6-7. Typical Bandpass Curve
1.1
VS = 3V
1.0
0.9
0.8
Bandwidth (-3 dB)
0.7
0.6
0.5
0.4
0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
f/f0
Q = f/f0/B; B →–3 dB values.
Example: Q = 1/(1.047 – 0.954) = 11
Figure 6-8. Illustration of Used Terms
Example: f = 33 kHz, burst with 16 pulses, 16 periods
Period (P = 16)
tPER = 970 µs
Burst (N = 16 pulses)
tGAP > tDON + tDOFF
t
B = 485 µs
IN
1
7
16
7
7
33 µs (f0 = 33 kHz)
tDON
tDOFF
485 µs
OUT
Envelope 1
Envelope 16
15520 µs
OUT
Telegram pause
Data word
16 ms
Data word
t
TREF = 62 ms
9
4905D–AUTO–10/06
Figure 6-9. Test Circuit
I
Ee = ∆U1/400 kΩ
∆U1
VDD = 3V to 5V
400 kΩ
1 nF
IIN_DC
R1 = 220Ω
VS
IIN
IEe
20 kΩ
IN
ATA2526 OUT
1 nF
VPULSE
IIN_AC100
GND
∆U2
+
C1
4.7 µF
IIN_DC = ∆U2/40 kΩ
20 kΩ
f0
16
-
DC
+
tPER = 10 ms
Figure 6-10. Application Circuit
VDD = 3V to 5V
R1 = 220Ω
R2(1) > 2.4 kΩ
RPU
IS
VS
IOCL
IN
ATA2526
Microcontroller
OUT
IIN
GND
VIN
VO
+
C1
IEe
(2)
IIN_DC
4.7 µF
C2 = 470 pF
(10 nF)
(1) Optional
(2) The value of C2 is dimensioned for the short burst type ATA2526P7xx. For the other types C2 can be omitted.
In case of an optional resistor R2 > 2.4 kΩ the value of C2 must be increased to C2 = 10 nF. For the other types
2 = 470 pF is sufficient.
C
10
ATA2526
4905D–AUTO–10/06
ATA2526
7. Chip Dimensions
Figure 7-1. Chip Size in µm
1080,960
GND
393,839
IN
666,828
scribe
OUT
225,496
ATA2526
48,73
VS
Zapping
Versioning
0,0
width
Note:
Pad coordinates are given for lower left corner of the pad in µm from the origin 0,0
Dimensions
Length inclusive scribe
Width inclusive scribe
Thickness
1.04 mm
1.20 mm
290 µ ± 5%
80 µ × 80 µ
60 µ × 60 µ
AlCu/AlSiTi(1)
0.8 µm
Pads
Fusing pads
Material
Pad metallurgy
Finish
Thickness
Material
Si3N4/SiO2
0.7/0.3 µm
Thickness
Note:
1. Value depends on manufacture location.
11
4905D–AUTO–10/06
8. Ordering Information
Delivery: unsawn wafers (DDW) in box
Extended Type Number
D(2)
Type
ATA2526P1xx(1)-DDW
2175
Standard type: ≥ 10 pulses, high data rate
Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure data
transmission
ATA2526P3xx(1)-DDW
ATA2526P7xx(1)-DDW
1400
3415
Short burst type: ≥ 6 pulses, highest data rate
Notes: 1. xx means carrier frequency value (33, 36, 37, 38 or 40 kHz and 56kHz)
2. Maximum data transmission rate up to bits/s with f0 = 56kHz, VS = 5V (see Figure 6-6 on page 8)
8.1
Pad Layout
Figure 8-1. Pad Layout
GND
IN
OUT
ATA2526
Pad layout
VS
Zapping
Versioning
Table 8-1.
SYMBOL
OUT
Pin Description
FUNCTION
Data output
Supply voltage
GND
VS
GND
IN
Input pin diode
f0 adjust
Zapping
Versioning
type adjust
12
ATA2526
4905D–AUTO–10/06
ATA2526
9. Revision History
Please note that the following page numbers referred to in this section refer to the specific revision
mentioned, not to this document.
Revision No.
History
• Features on page 1 changed
• Applications on page 1 changed
• Section 1 “Description” on page 1 changed
• Section 2 “Pin Configuration” on page 2 changed
• Number 2.2, 3.3 and 3.4 of Section 5 “Electrical Characteristics, 3-V
Operation” on pages 3 to 4 changed
4905D-AUTO-10/06
• Number 73, 7.4 and 8.4 of Section 5 “Electrical Characteristics, 3-V
Operation” on page 5 to 6 changed
• Section 6.1 “ESD” on page 6 deleted
• Figure 7-10 “Application Circuit” on page 10 changed
• Section 9 “Ordering Information” on page 12 changed
• Rename Figure 9-1 on page 12
4905C-AUTO-04/06
4905B-AUTO-04/06
• Section 9 “Ordering Information” on page 12 changed
• Put datasheet in a new template
• Section 8 “Chip Dimensions” on page 11 changed
13
4905D–AUTO–10/06
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4905D–AUTO–10/06
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