ATA2526S136C-DDW [MICROCHIP]
Telecom Circuit, 1-Func;型号: | ATA2526S136C-DDW |
厂家: | MICROCHIP |
描述: | Telecom Circuit, 1-Func ATM 异步传输模式 电信 电信集成电路 |
文件: | 总13页 (文件大小:627K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ATA2526
Low-voltage IR Receiver ASSP
DATASHEET
Features
● No external components except PIN diode
● Supply-voltage range: 2.7V to 5.5V
● High sensitivity due to automatic sensitivity adaption (AGC) and automatic strong
signal adaption (ATC)
● Automatic supply voltage adaptation
● High immunity against disturbances from daylight and lamps
● Small size and innovative pad layout
● Available for carrier frequencies between 33kHz to 40kHz and 56kHz; adjusted by
zener diode fusing ±2.5%
● TTL and CMOS compatible
Applications
● Home entertainment applications
● Home appliances
● Remote control equipment
4905G-AUTO-04/14
1.
Description
The Atmel® IC ATA2526 is a complete IR receiver for data communication that has been developed and optimized for use in
carrier-frequency-modulated transmission applications. The IC combines small size with high sensitivity suppression of
noise as caused by daylight and lamps. An innovative and patented pad layout offers unique flexibility for IR receiver module
assembly. The Atmel ATA2526 is available with standard frequencies (33, 36, 37, 38, 40, 56kHz) and 3 different noise
suppression regulation types (standard, lamp, short burst), thus covering the requirements of different high-volume remote
control solutions (please refer to selection guide available for Atmel ATA2525/ATA2526). The Atmel ATA2526 operates in a
supply voltage range of 2.7V to 5.5V.
The function of the Atmel ATA2526 can be described using the block diagram of Figure 1-1. The input stage has two main
functions. First it provides a suitable bias voltage for the PIN diode. Secondly the pulsed photo-current signals are
transformed into a voltage by a special circuit which is optimized for low noise applications. After amplification by a controlled
gain amplifier (CGA) the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is
equivalent to the chosen carrier frequency of the input signal. The demodulator is used first to convert the input burst signal
to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at
the output pin. This is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the
present environmental conditions (ambient light, modulated lamps etc.). Other features can be used to adapt the device to
the individual application to ensure best transmission quality.
Figure 1-1. Block Diagram
VS
IN
OUT
CGA and
Filter
Micro-
controller
Demodulator
Input
Oscillator
AGC/ATC and Digital Control
Carrier Frequency f
0
ATA2526
Modulated IR Signal
min 6 or 10 Pulses
GND
2
ATA2526 [DATASHEET]
4905G–AUTO–04/14
2.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameter
Symbol
VS
Value
–0.3 to +6
3
Unit
V
Supply voltage
Supply current
IS
mA
V
Input voltage
VIN
IIN
–0.3 to VS
0.75
Input DC current at VS = 5V
Output voltage
mA
V
VO
–0.3 to VS
10
Output current
IO
mA
°C
Operating temperature
Storage temperature
Power dissipation at Tamb = 25°C
Tamb
Tstg
Ptot
–25 to +85
–40 to +125
°C
mW
30
3.
Electrical Characteristics, 3-V Operation
Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified.
No. Parameters
Supply
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
1
1.1 Supply-voltage range
1.2 Supply current
VS
IS
2.7
0.7
3.0
0.9
3.3
1.3
V
C
B
IIN =0
mA
2
Output
Tamb = 25°C
see Figure 5-10 on page 9
2.1 Internal pull-up resistor
RPU
40
k
A
R2 = 1.4k
see Figure 5-10 on page 9
2.2 Output voltage low
2.3 Output voltage high
2.4 Output current clamping
VOL
VOH
IOCL
250
VS
mV
V
B
B
B
VS – 0.25
R2 = 0
8
mA
see Figure 5-10 on page 9
3
Input
VIN = 0
see Figure 5-10 on page 9
3.1 Input DC current
IIN_DCMAX
IIN_DCMAX
–150
µA
µA
C
B
Input DC current
3.2
VIN = 0; VS = 3V
Tamb = 25°C
–350
–800
see Figure 5-3 on page 6
Minimum detection threshold Test signal:
3.3 current see Figure 5-9 on page 9
see Figure 5-1 on page 6 VS = 3V
IEemin
pA
pA
B
C
Tamb= 25°C, IIN_DC=1µA
square pp
burst N = 16
f = f0; tPER = 10ms
see Figure 5-8 on page 8
BER = 50(1)
Minimum detection threshold
current with AC current
disturbance IIN_AC100 =
3µA at 100Hz
3.4
IEemin
–1600
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
ATA2526 [DATASHEET]
3
4905G–AUTO–04/14
3.
Electrical Characteristics, 3-V Operation (Continued)
Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified.
No. Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
Test signal:
see Figure 5-9 on page 9
VS = 3V, Tamb = 25°C
Maximum detection threshold IIN_DC = 1µA
3.5 current with
VIN > 0V
square pp
burst N = 16
IEemax
–200
µA
D
f = f0; tPER = 10ms
see Figure 5-8 on page 8
BER = 5%(1)
4
Controlled Amplifier and Filter
Maximum value of variable
gain (CGA)
4.1
VS = 3V, Tamb = 25°C
VS = 3V, Tamb = 25°C
GVARMAX
50
dB
D
Minimum value of variable
gain (CGA)
4.3 Total internal amplification(2) VS = 3V, Tamb = 25°C
4.2
GVARMIN
GMAX
–6
72
f0
dB
dB
%
D
D
A
Center frequency fusing
accuracy of bandpass
4.4
4.5
4.6
VS = 3V, Tamb = 25°C
f03V_FUSE
–2.5
–5.5
–4.5
+2.5
+3.5
+3.0
Overall accuracy center
frequency of bandpass
f03V
f03V
B
f0
f0
%
%
C
C
C
Overall accuracy center
frequency of bandpass
Tamb = 0 to 70°C
–3dB; f0 = 38kHz;
see Figure 5-7 on page 8
4.7 BPF bandwidth
3.8
kHz
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
4.
Electrical Characteristics, 5-V Operation
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No. Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
5
Supply
5.1
5.2
6
Supply-voltage range
Supply current
Output
VS
IS
4.5
0.9
5.0
1.2
5.5
1.6
V
C
B
IIN =0
mA
Tamb = 25°C
see Figure 5-10 on page 9
6.1
Internal pull-up resistor
RPU
40
k
A
R2 = 2.4k
see Figure 5-10 on page 9
6.2
6.3
6.4
Output voltage low
VOL
VOH
IOCL
250
VS
mV
V
B
B
B
Output voltage high
Output current clamping
VS – 0.25
R2 = 0
8
mA
see Figure 5-10 on page 9
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
4
ATA2526 [DATASHEET]
4905G–AUTO–04/14
4.
Electrical Characteristics, 5-V Operation (Continued)
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No. Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
7
Input
VIN = 0
see Figure 5-10 on page 9
7.1
Input DC current
IIN_DCMAX
IIN_DCMAX
–400
µA
µA
C
B
Input DC current
see Figure 5-4 on page 7
VIN = 0; VS = 5V
Tamb = 25°C
7.2
7.3
–700
Minimum detection
threshold current
see Figure 5-2 on page 6
Test signal:
see Figure 5-9 on page 9
VS = 5V
IEemin
–1000
pA
B
Tamb = 25°C
I
IN_DC = 1µA
Minimum detection
threshold current with AC
current disturbance
square pp
burst N = 16
f = f0; tPER = 10ms
see Figure 5-8 on page 8
BER = 50(1)
7.4
7.5
IEemin
–2500
pA
C
IIN_AC100 = 3µA at 100Hz
Test signal:
see Figure 5-9 on page 9
VS = 5V, Tamb = 25°C
IIN_DC = 1µA
square pp
burst N = 16
f = f0; tPER = 10ms
see Figure 5-8 on page 8
BER = 5%(1)
Maximum detection
threshold current with
VIN > 0V
IEemax
–500
µA
dB
D
D
8
Controlled Amplifier and Filter
Maximum value of variable
gain (CGA)
8.1
VS = 5V, Tamb = 25°C
GVARMAX
50
Minimum value of variable
gain (CGA)
Total internal amplification(2) VS = 5V, Tamb = 25°C
8.2
8.3
8.4
VS = 5V, Tamb = 25°C
GVARMIN
GMAX
f05V
–6
72
dB
dB
%
D
D
C
Resulting center frequency f0 fused at VS = 3V
fusing accuracy
f03V-FUSE
+ 0.5
VS = 5V, Tamb = 25°C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
4.1
Reliability
Electrical qualification (1000h at 150°C) in molded SO8 plastic package
ATA2526 [DATASHEET]
5
4905G–AUTO–04/14
5.
Typical Electrical Curves at Tamb = 25°C
Figure 5-1. IEemin versus IIN_DC, VS = 3V
100
VS = 3V
f = f0
10
1
0
0
1
10
100
1000
1000
1000
IIN_DC (µA)
Figure 5-2. IEemin versus IIN_DC, VS = 5V
100
VS = 5V
f = f0
10
1
0
0
1
10
100
IIN_DC (µA)
Figure 5-3.
V
IN versus IIN_DC, VS = 3V
3.5
VS = 3V
f = f0
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.1
1
10
100
IIN_DC (µA)
6
ATA2526 [DATASHEET]
4905G–AUTO–04/14
Figure 5-4. VIN versus IIN_DC, VS = 5V
3.5
VS = 5V
f = f0
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.1
1
10
100
1000
IIN_DC (µA)
Figure 5-5. Data Transmission Rate, VS = 3V
4000
3500
3060
3000
2500
2000
1500
1000
500
Short burst
type
2077
1357
2000
1333
Standard
type
Lamp type
905
0
30
35
40
45
50
55
60
f0 (kHz)
Figure 5-6. Data Transmission Rate, VS = 5V
4000
3500
3415
Short burst
3000
2500
2000
1500
1000
500
type
2317
1479
2179
1404
Standard
type
Lamp type
952
0
30
35
40
45
50
55
60
f0 (kHz)
ATA2526 [DATASHEET]
7
4905G–AUTO–04/14
Figure 5-7. Typical Bandpass Curve
1.1
VS = 3V
1.0
0.9
0.8
Bandwidth (-3dB)
0.7
0.6
0.5
0.4
0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
f/f0
Q = f/f0/B; B –3dB values
Example: Q = 1/(1.047 – 0.954) = 11
Figure 5-8. Illustration of Used Terms, Example: f = 33kHz, burst with 16 pulses, 16 periods
Period (P = 16)
tPER = 970µs
Burst (N = 16 pulses)
GAP > tDON + tDOFF
tB = 485µs
t
IN
1
7
16
7
7
33µs (f0 = 33kHz)
tDON
tDOFF
Envelope 1
485µs
OUT
Envelope 16
15520µs
OUT
Telegram Pause
Data Word
16 ms
Data Word
t
TREF = 62ms
8
ATA2526 [DATASHEET]
4905G–AUTO–04/14
Figure 5-9. Test Circuit
I
Ee = ΔU1/400kΩ
ΔU1
V
DD = 3V to 5V
400kΩ
1nF
IIN_DC
R1 = 220Ω
VS
IIN
IEe
20kΩ
1nF
IN
ATA2526 OUT
GND
VPULSE
IPIN_AC100
ΔU2
+
IIN_DC = ΔU2/40kΩ
20kΩ
f0
C1 = 4.7µF
16
-
DC
+
tPER = 10ms
Figure 5-10. Application Circuit
VDD = 3V to 5V
R1 = 220Ω
R2(1) > 2.4kΩ
RPU
IS
VS
IOCL
IN
ATA2526
IN
Microcontroller
OUT
IIN
GND
VIN
VO
+
C1
C2(2) = 470pF
(10nF)
IEe
IIN_DC
4.7µF
ATA2526 [DATASHEET]
9
4905G–AUTO–04/14
6.
Chip Dimensions
Figure 6-1. Chip Size in µm
1080,960
GND
393,839
IN
666,828
scribe
OUT
225,496
ATA2526
48,73
VS
Zapping
Versioning
0,0
width
Pad coordinates are given for lower left corner of the pad in µm from the origin 0,0
Note:
Dimensions
Length inclusive scribe
Width inclusive scribe
Thickness
1.04mm
1.20mm
290µ ±5%
80µ 80µ
60µ 60µ
AlCu/AlSiTi(1)
0.8µm
Pads
Fusing pads
Material
Pad metallurgy
Finish
Thickness
Material
Si3N4/SiO2
0.7/0.3µm
Thickness
Note:
1. Value depends on manufacture location.
10
ATA2526 [DATASHEET]
4905G–AUTO–04/14
7.
Ordering Information
Delivery: unsawn wafers (DDW) in box
Extended Type Number
D(2)
Type
ATA2526S1xx(1)C-DDW
2175
Standard type: ≥ 10 pulses, high data rate
Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure data
transmission
ATA2526S3xx(1)C-DDW
ATA2526S7xx(1)C-DDW
1400
3415
Short burst type: ≥ 6 pulses, highest data rate
Notes: 1. xx means carrier frequency value (33, 36, 37, 38 or 40kHz and 56kHz)
2. Maximum data transmission rate up to bits/s with f0 = 56kHz, VS = 5V (see Figure 5-6 on page 7)
7.1
Pad Layout
Figure 7-1. Pad Layout
GND
IN
OUT
ATA2526
Pad Layout
VS
Zapping
Versioning
Table 7-1. Pin Description
Symbol
Function
Data output
Supply voltage
GND
OUT
VS
GND
IN
Input pin diode
f0 adjust
Zapping
Versioning
Type adjust
ATA2526 [DATASHEET]
11
4905G–AUTO–04/14
8.
Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this
document.
Revision No.
History
4905G-AUTO-04/14
Put datasheet in the latest template
Thermal Resistance table deleted
Pin columns in Electrical Characteristics tables deleted
Put datasheet in newest template
4905F-AUTO-05/10
4905E-AUTO-09/09
Section 8 “Ordering Information” on page 12 changed
Features on page 1 changed
Applications on page 1 changed
Section 1 “Description” on page 1 changed
Section 2 “Pin Configuration” on page 2 changed
Number 2.2, 3.3 and 3.4 of Section 5 “Electrical Characteristics, 3-V Operation” on
pages 3 to 4 changed
4905D-AUTO-10/06
Number 73, 7.4 and 8.4 of Section 5 “Electrical Characteristics, 3-V Operation” on page
5 to 6 changed
Section 6.1 “ESD” on page 6 deleted
Figure 7-10 “Application Circuit” on page 10 changed
Section 9 “Ordering Information” on page 12 changed
Rename Figure 9-1 on page 12
4905C-AUTO-04/06
4905B-AUTO-04/06
Section 9 “Ordering Information” on page 12 changed
Put datasheet in a new template
Section 8 “Chip Dimensions” on page 11 changed
12
ATA2526 [DATASHEET]
4905G–AUTO–04/14
X
X X X X
X
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© 2014 Atmel Corporation. / Rev.: 4905G–AUTO–04/14
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