ATA2526S356C-DDW [ATMEL]

Telecom Circuit, 1-Func;
ATA2526S356C-DDW
型号: ATA2526S356C-DDW
厂家: ATMEL    ATMEL
描述:

Telecom Circuit, 1-Func

文件: 总13页 (文件大小:691K)
中文:  中文翻译
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ATA2526  
Low-voltage IR Receiver ASSP  
DATASHEET  
Features  
No external components except PIN diode  
Supply-voltage range: 2.7V to 5.5V  
High sensitivity due to automatic sensitivity adaption (AGC) and automatic strong  
signal adaption (ATC)  
Automatic supply voltage adaptation  
High immunity against disturbances from daylight and lamps  
Small size and innovative pad layout  
Available for carrier frequencies between 33kHz to 40kHz and 56kHz; adjusted by  
zener diode fusing ±2.5%  
TTL and CMOS compatible  
Applications  
Home entertainment applications  
Home appliances  
Remote control equipment  
4905G-AUTO-04/14  
1.  
Description  
The Atmel® IC ATA2526 is a complete IR receiver for data communication that has been developed and optimized for use in  
carrier-frequency-modulated transmission applications. The IC combines small size with high sensitivity suppression of  
noise as caused by daylight and lamps. An innovative and patented pad layout offers unique flexibility for IR receiver module  
assembly. The Atmel ATA2526 is available with standard frequencies (33, 36, 37, 38, 40, 56kHz) and 3 different noise  
suppression regulation types (standard, lamp, short burst), thus covering the requirements of different high-volume remote  
control solutions (please refer to selection guide available for Atmel ATA2525/ATA2526). The Atmel ATA2526 operates in a  
supply voltage range of 2.7V to 5.5V.  
The function of the Atmel ATA2526 can be described using the block diagram of Figure 1-1. The input stage has two main  
functions. First it provides a suitable bias voltage for the PIN diode. Secondly the pulsed photo-current signals are  
transformed into a voltage by a special circuit which is optimized for low noise applications. After amplification by a controlled  
gain amplifier (CGA) the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is  
equivalent to the chosen carrier frequency of the input signal. The demodulator is used first to convert the input burst signal  
to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at  
the output pin. This is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the  
present environmental conditions (ambient light, modulated lamps etc.). Other features can be used to adapt the device to  
the individual application to ensure best transmission quality.  
Figure 1-1. Block Diagram  
VS  
IN  
OUT  
CGA and  
Filter  
Micro-  
controller  
Demodulator  
Input  
Oscillator  
AGC/ATC and Digital Control  
Carrier Frequency f  
0
ATA2526  
Modulated IR Signal  
min 6 or 10 Pulses  
GND  
2
ATA2526 [DATASHEET]  
4905G–AUTO–04/14  
2.  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating  
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this  
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  
Parameter  
Symbol  
VS  
Value  
–0.3 to +6  
3
Unit  
V
Supply voltage  
Supply current  
IS  
mA  
V
Input voltage  
VIN  
IIN  
–0.3 to VS  
0.75  
Input DC current at VS = 5V  
Output voltage  
mA  
V
VO  
–0.3 to VS  
10  
Output current  
IO  
mA  
°C  
Operating temperature  
Storage temperature  
Power dissipation at Tamb = 25°C  
Tamb  
Tstg  
Ptot  
–25 to +85  
–40 to +125  
°C  
mW  
30  
3.  
Electrical Characteristics, 3-V Operation  
Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified.  
No. Parameters  
Supply  
Test Conditions  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Type*  
1
1.1 Supply-voltage range  
1.2 Supply current  
VS  
IS  
2.7  
0.7  
3.0  
0.9  
3.3  
1.3  
V
C
B
IIN =0  
mA  
2
Output  
Tamb = 25°C  
see Figure 5-10 on page 9  
2.1 Internal pull-up resistor  
RPU  
40  
kΩ  
A
R2 = 1.4kΩ  
see Figure 5-10 on page 9  
2.2 Output voltage low  
2.3 Output voltage high  
2.4 Output current clamping  
VOL  
VOH  
IOCL  
250  
VS  
mV  
V
B
B
B
VS – 0.25  
R2 = 0  
8
mA  
see Figure 5-10 on page 9  
3
Input  
VIN = 0  
see Figure 5-10 on page 9  
3.1 Input DC current  
IIN_DCMAX  
IIN_DCMAX  
–150  
µA  
µA  
C
B
Input DC current  
3.2  
VIN = 0; VS = 3V  
Tamb = 25°C  
–350  
–800  
see Figure 5-3 on page 6  
Minimum detection threshold Test signal:  
3.3 current see Figure 5-9 on page 9  
see Figure 5-1 on page 6 VS = 3V  
IEemin  
pA  
pA  
B
C
Tamb= 25°C, IIN_DC=1µA  
square pp  
burst N = 16  
f = f0; tPER = 10ms  
see Figure 5-8 on page 8  
BER = 50(1)  
Minimum detection threshold  
current with AC current  
disturbance IIN_AC100 =  
3µA at 100Hz  
3.4  
IEemin  
–1600  
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter  
Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT  
2. After transformation of input current into voltage  
ATA2526 [DATASHEET]  
3
4905G–AUTO–04/14  
3.  
Electrical Characteristics, 3-V Operation (Continued)  
Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified.  
No. Parameters  
Test Conditions  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Type*  
Test signal:  
see Figure 5-9 on page 9  
VS = 3V, Tamb = 25°C  
Maximum detection threshold IIN_DC = 1µA  
3.5 current with  
VIN > 0V  
square pp  
burst N = 16  
IEemax  
–200  
µA  
D
f = f0; tPER = 10ms  
see Figure 5-8 on page 8  
BER = 5%(1)  
4
Controlled Amplifier and Filter  
Maximum value of variable  
gain (CGA)  
4.1  
VS = 3V, Tamb = 25°C  
VS = 3V, Tamb = 25°C  
GVARMAX  
50  
dB  
D
Minimum value of variable  
gain (CGA)  
4.3 Total internal amplification(2) VS = 3V, Tamb = 25°C  
4.2  
GVARMIN  
GMAX  
–6  
72  
f0  
dB  
dB  
%
D
D
A
Center frequency fusing  
accuracy of bandpass  
4.4  
4.5  
4.6  
VS = 3V, Tamb = 25°C  
f03V_FUSE  
–2.5  
–5.5  
–4.5  
+2.5  
+3.5  
+3.0  
Overall accuracy center  
frequency of bandpass  
f03V  
f03V  
B
f0  
f0  
%
%
C
C
C
Overall accuracy center  
frequency of bandpass  
Tamb = 0 to 70°C  
–3dB; f0 = 38kHz;  
see Figure 5-7 on page 8  
4.7 BPF bandwidth  
3.8  
kHz  
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter  
Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT  
2. After transformation of input current into voltage  
4.  
Electrical Characteristics, 5-V Operation  
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.  
No. Parameters  
Test Conditions  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Type*  
5
Supply  
5.1  
5.2  
6
Supply-voltage range  
Supply current  
Output  
VS  
IS  
4.5  
0.9  
5.0  
1.2  
5.5  
1.6  
V
C
B
IIN =0  
mA  
Tamb = 25°C  
see Figure 5-10 on page 9  
6.1  
Internal pull-up resistor  
RPU  
40  
kΩ  
A
R2 = 2.4kΩ  
see Figure 5-10 on page 9  
6.2  
6.3  
6.4  
Output voltage low  
VOL  
VOH  
IOCL  
250  
VS  
mV  
V
B
B
B
Output voltage high  
Output current clamping  
VS – 0.25  
R2 = 0  
8
mA  
see Figure 5-10 on page 9  
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter  
Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT  
2. After transformation of input current into voltage  
4
ATA2526 [DATASHEET]  
4905G–AUTO–04/14  
4.  
Electrical Characteristics, 5-V Operation (Continued)  
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.  
No. Parameters  
Test Conditions  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Type*  
7
Input  
VIN = 0  
see Figure 5-10 on page 9  
7.1  
Input DC current  
IIN_DCMAX  
IIN_DCMAX  
–400  
µA  
µA  
C
B
Input DC current  
see Figure 5-4 on page 7  
VIN = 0; VS = 5V  
Tamb = 25°C  
7.2  
7.3  
–700  
Minimum detection  
threshold current  
see Figure 5-2 on page 6  
Test signal:  
see Figure 5-9 on page 9  
VS = 5V  
IEemin  
–1000  
pA  
B
Tamb = 25°C  
I
IN_DC = 1µA  
Minimum detection  
threshold current with AC  
current disturbance  
square pp  
burst N = 16  
f = f0; tPER = 10ms  
see Figure 5-8 on page 8  
BER = 50(1)  
7.4  
7.5  
IEemin  
–2500  
pA  
C
IIN_AC100 = 3µA at 100Hz  
Test signal:  
see Figure 5-9 on page 9  
VS = 5V, Tamb = 25°C  
IIN_DC = 1µA  
square pp  
burst N = 16  
f = f0; tPER = 10ms  
see Figure 5-8 on page 8  
BER = 5%(1)  
Maximum detection  
threshold current with  
VIN > 0V  
IEemax  
–500  
µA  
dB  
D
D
8
Controlled Amplifier and Filter  
Maximum value of variable  
gain (CGA)  
8.1  
VS = 5V, Tamb = 25°C  
GVARMAX  
50  
Minimum value of variable  
gain (CGA)  
Total internal amplification(2) VS = 5V, Tamb = 25°C  
8.2  
8.3  
8.4  
VS = 5V, Tamb = 25°C  
GVARMIN  
GMAX  
f05V  
–6  
72  
dB  
dB  
%
D
D
C
Resulting center frequency f0 fused at VS = 3V  
fusing accuracy  
f03V-FUSE  
+ 0.5  
VS = 5V, Tamb = 25°C  
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter  
Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT  
2. After transformation of input current into voltage  
4.1  
Reliability  
Electrical qualification (1000h at 150°C) in molded SO8 plastic package  
ATA2526 [DATASHEET]  
5
4905G–AUTO–04/14  
5.  
Typical Electrical Curves at Tamb = 25°C  
Figure 5-1. IEemin versus IIN_DC, VS = 3V  
100  
VS = 3V  
f = f0  
10  
1
0
0
1
10  
100  
1000  
1000  
1000  
IIN_DC (µA)  
Figure 5-2. IEemin versus IIN_DC, VS = 5V  
100  
VS = 5V  
f = f0  
10  
1
0
0
1
10  
100  
IIN_DC (µA)  
Figure 5-3.  
V
IN versus IIN_DC, VS = 3V  
3.5  
VS = 3V  
f = f0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
0
0.1  
1
10  
100  
IIN_DC (µA)  
6
ATA2526 [DATASHEET]  
4905G–AUTO–04/14  
Figure 5-4. VIN versus IIN_DC, VS = 5V  
3.5  
VS = 5V  
f = f0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
0
0.1  
1
10  
100  
1000  
IIN_DC (µA)  
Figure 5-5. Data Transmission Rate, VS = 3V  
4000  
3500  
3060  
3000  
2500  
2000  
1500  
1000  
500  
Short burst  
type  
2077  
1357  
2000  
1333  
Standard  
type  
Lamp type  
905  
0
30  
35  
40  
45  
50  
55  
60  
f0 (kHz)  
Figure 5-6. Data Transmission Rate, VS = 5V  
4000  
3500  
3415  
Short burst  
3000  
2500  
2000  
1500  
1000  
500  
type  
2317  
1479  
2179  
1404  
Standard  
type  
Lamp type  
952  
0
30  
35  
40  
45  
50  
55  
60  
f0 (kHz)  
ATA2526 [DATASHEET]  
7
4905G–AUTO–04/14  
Figure 5-7. Typical Bandpass Curve  
1.1  
VS = 3V  
1.0  
0.9  
0.8  
Bandwidth (-3dB)  
0.7  
0.6  
0.5  
0.4  
0.92  
0.94  
0.96  
0.98  
1.00  
1.02  
1.04  
1.06  
1.08  
f/f0  
Q = f/f0/B; B –3dB values  
Example: Q = 1/(1.047 – 0.954) = 11  
Figure 5-8. Illustration of Used Terms, Example: f = 33kHz, burst with 16 pulses, 16 periods  
Period (P = 16)  
tPER = 970µs  
Burst (N = 16 pulses)  
GAP > tDON + tDOFF  
tB = 485µs  
t
IN  
1
7
16  
7
7
33µs (f0 = 33kHz)  
tDON  
tDOFF  
Envelope 1  
485µs  
OUT  
Envelope 16  
15520µs  
OUT  
Telegram Pause  
Data Word  
16 ms  
Data Word  
t
TREF = 62ms  
8
ATA2526 [DATASHEET]  
4905G–AUTO–04/14  
Figure 5-9. Test Circuit  
I
Ee = ΔU1/400kΩ  
ΔU1  
V
DD = 3V to 5V  
400kΩ  
1nF  
IIN_DC  
R1 = 220Ω  
VS  
IIN  
IEe  
20kΩ  
1nF  
IN  
ATA2526 OUT  
GND  
VPULSE  
IPIN_AC100  
ΔU2  
+
IIN_DC = ΔU2/40kΩ  
20kΩ  
f0  
C1 = 4.7µF  
16  
-
DC  
+
tPER = 10ms  
Figure 5-10. Application Circuit  
VDD = 3V to 5V  
R1 = 220Ω  
R2(1) > 2.4kΩ  
RPU  
IS  
VS  
IOCL  
IN  
ATA2526  
IN  
Microcontroller  
OUT  
IIN  
GND  
VIN  
VO  
+
C1  
C2(2) = 470pF  
(10nF)  
IEe  
IIN_DC  
4.7µF  
ATA2526 [DATASHEET]  
9
4905G–AUTO–04/14  
6.  
Chip Dimensions  
Figure 6-1. Chip Size in µm  
1080,960  
GND  
393,839  
IN  
666,828  
scribe  
OUT  
225,496  
ATA2526  
48,73  
VS  
Zapping  
Versioning  
0,0  
width  
Pad coordinates are given for lower left corner of the pad in µm from the origin 0,0  
Note:  
Dimensions  
Length inclusive scribe  
Width inclusive scribe  
Thickness  
1.04mm  
1.20mm  
290µ ±5%  
80µ × 80µ  
60µ × 60µ  
AlCu/AlSiTi(1)  
0.8µm  
Pads  
Fusing pads  
Material  
Pad metallurgy  
Finish  
Thickness  
Material  
Si3N4/SiO2  
0.7/0.3µm  
Thickness  
Note:  
1. Value depends on manufacture location.  
10  
ATA2526 [DATASHEET]  
4905G–AUTO–04/14  
7.  
Ordering Information  
Delivery: unsawn wafers (DDW) in box  
Extended Type Number  
D(2)  
Type  
ATA2526S1xx(1)C-DDW  
2175  
Standard type: 10 pulses, high data rate  
Lamp type: 10 pulses, enhanced suppression of disturbances, secure data  
transmission  
ATA2526S3xx(1)C-DDW  
ATA2526S7xx(1)C-DDW  
1400  
3415  
Short burst type: 6 pulses, highest data rate  
Notes: 1. xx means carrier frequency value (33, 36, 37, 38 or 40kHz and 56kHz)  
2. Maximum data transmission rate up to bits/s with f0 = 56kHz, VS = 5V (see Figure 5-6 on page 7)  
7.1  
Pad Layout  
Figure 7-1. Pad Layout  
GND  
IN  
OUT  
ATA2526  
Pad Layout  
VS  
Zapping  
Versioning  
Table 7-1. Pin Description  
Symbol  
Function  
Data output  
Supply voltage  
GND  
OUT  
VS  
GND  
IN  
Input pin diode  
f0 adjust  
Zapping  
Versioning  
Type adjust  
ATA2526 [DATASHEET]  
11  
4905G–AUTO–04/14  
8.  
Revision History  
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this  
document.  
Revision No.  
History  
4905G-AUTO-04/14  
Put datasheet in the latest template  
Thermal Resistance table deleted  
Pin columns in Electrical Characteristics tables deleted  
Put datasheet in newest template  
4905F-AUTO-05/10  
4905E-AUTO-09/09  
Section 8 “Ordering Information” on page 12 changed  
Features on page 1 changed  
Applications on page 1 changed  
Section 1 “Description” on page 1 changed  
Section 2 “Pin Configuration” on page 2 changed  
Number 2.2, 3.3 and 3.4 of Section 5 “Electrical Characteristics, 3-V Operation” on  
pages 3 to 4 changed  
4905D-AUTO-10/06  
Number 73, 7.4 and 8.4 of Section 5 “Electrical Characteristics, 3-V Operation” on page  
5 to 6 changed  
Section 6.1 “ESD” on page 6 deleted  
Figure 7-10 “Application Circuit” on page 10 changed  
Section 9 “Ordering Information” on page 12 changed  
Rename Figure 9-1 on page 12  
4905C-AUTO-04/06  
4905B-AUTO-04/06  
Section 9 “Ordering Information” on page 12 changed  
Put datasheet in a new template  
Section 8 “Chip Dimensions” on page 11 changed  
12  
ATA2526 [DATASHEET]  
4905G–AUTO–04/14  
X
X X X X  
X
Atmel Corporation  
1600 Technology Drive, San Jose, CA 95110 USA  
T: (+1)(408) 441.0311  
F: (+1)(408) 436.4200  
|
www.atmel.com  
© 2014 Atmel Corporation. / Rev.: Rev.: 4905G–AUTO–04/14  
Atmel®, Atmel logo and combinations thereof, Enabling Unlimited Possibilities®, and others are registered trademarks or trademarks of Atmel Corporation or its  
subsidiaries. Other terms and product names may be trademarks of others.  
DISCLAIMER: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any intellectual property right  
is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN THE ATMEL TERMS AND CONDITIONS OF SALES LOCATED ON THE  
ATMEL WEBSITE, ATMEL ASSUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXPRESS, IMPLIED OR STATUTORY WARRANTY RELATING TO ITS PRODUCTS  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT. IN NO EVENT  
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FOR LOSS AND PROFITS, BUSINESS INTERRUPTION, OR LOSS OF INFORMATION) ARISING OUT OF THE USE OR INABILITY TO USE THIS DOCUMENT, EVEN IF ATMEL HAS  
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contained herein. Unless specifically provided otherwise, Atmel products are not suitable for, and shall not be used in, automotive applications. Atmel products are not intended,  
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