ATR7039-PEQG [ATMEL]

2.9 GHz to 5.8 GHz SiGe Frequency Doubler IC; 2.9 GHz到5.8 GHz的SiGe半导体倍频器IC
ATR7039-PEQG
型号: ATR7039-PEQG
厂家: ATMEL    ATMEL
描述:

2.9 GHz to 5.8 GHz SiGe Frequency Doubler IC
2.9 GHz到5.8 GHz的SiGe半导体倍频器IC

射频和微波 射频倍频器 微波倍频器 半导体 异步传输模式 ATM
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TM  
Features  
Input Frequency Range 2.7 GHz to 3.0 GHz  
POUT Typically 12 dBm at 5.8 GHz  
PIN Typically 0 dBm  
2.9 GHz to  
5.8 GHz SiGe  
Frequency  
Doubler IC  
VCC 3.0V to 3.9V  
CW Mode Operation  
Package: QFN16  
Benefits  
Ramping Control Extends Battery Lifetime  
AC Input Coupling Saves External Capacitors  
Extremely Low BOM for Application  
ATR7039  
Preliminary  
Electrostatic sensitive device.  
Observe precautions for handling.  
1. Description  
The 5.8-GHz frequency doubler IC is designed with Atmel’s Silicon-Germanium  
(SiGe) process and provides a high conversion gain.  
The device consists of a doubler stage, a filter and a driver amplifier with an output  
power of 11 dBm. The output stage was realized using an open-collector structure.  
Power-up/down and output levels are controlled via the bias control pin 6 and pin 7  
(VCTL).  
Rev. 4786E–DECT–10/05  
Figure 1-1. Block Diagram  
VCC1  
15  
VCC2  
13  
ATR7039  
RFOUT  
11  
RFIN  
3
Frequency  
doubler  
Filter  
RFOUT  
10  
Bias control  
6
7
16  
VCTL1  
VCC_TL  
VCTL2  
2
ATR7039 [Preliminary]  
4786E–DECT–10/05  
ATR7039 [Preliminary]  
2. Pin Configuration  
Figure 2-1. Pinning QFN16  
16 15 14 13  
GND  
NC  
12 GND  
11 RFOUT  
10 RFOUT  
1
2
3
4
RFIN  
GND  
GND on the  
Paddle  
9
GND  
5
6 7 8  
Table 2-1.  
Pin Description  
Pin  
Symbol  
GND  
Function  
1
2
Ground  
NC  
Not connected  
RF input  
Ground  
3
RFIN  
4
GND  
5
GND  
Ground  
6
VCTL1  
VCTL2  
GND  
Power-up/biasing control voltage to frequency doubler stage  
7
Power-up/biasing control voltage to output amplifier stage  
8
Ground  
9
GND  
Ground  
10  
11  
12  
13  
14  
15  
16  
Paddle  
RFOUT  
RFOUT  
GND  
RF output  
RF output  
Ground  
VCC2  
GND  
Supply voltage for output amplifier stage  
Ground  
VCC1  
VCC_CTL  
Supply voltage for frequency doubler stage  
Supply voltage for biasing control  
Ground  
3
4786E–DECT–10/05  
3. Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating  
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this  
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  
Parameters  
Symbol  
VCC  
Value  
Unit  
V
Supply voltage, no RF  
Supply current  
5
400  
ICC  
mA  
°C  
Junction temperature  
Storage temperature  
Input RF power  
Tj  
150  
TStg  
–40 to +125  
13  
°C  
PIN  
dBm  
V
Control voltage  
VCTL1,2  
2.5  
Note:  
The part may not survive all parameters at maximum applied simultaneously!  
4. Thermal Resistance  
Parameters  
Symbol  
Value  
Unit  
Junction ambient QFN16 package,  
slug soldered on PCB  
RthJA  
40  
K/W  
5. Operating Range  
Parameters  
Symbol  
VCC  
Value  
Unit  
V
Supply voltage  
3.0 to 3.9  
Input frequency range  
Output frequency range  
Ambient temperature range  
fin  
2700 to 3000  
5400 to 6000  
–25 to +75  
MHz  
MHz  
°C  
fout  
Tamb  
4
ATR7039 [Preliminary]  
4786E–DECT–10/05  
ATR7039 [Preliminary]  
6. Electrical Characteristics  
No. Parameters  
Test Conditions  
Pin  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Type*  
1.0  
Input power  
3
Pin  
0
10  
dBm  
A
Measured at harmonic  
frequency 2f  
1.1  
10, 11  
10, 11  
10, 11  
10, 11  
P2f  
P3f  
P1f  
Pd  
12  
-8  
dBm  
dBm  
dBm  
dB  
A
A
A
A
Measured at harmonic  
frequency 3f  
1.2  
1.3  
1.4  
Output power  
Measured at  
fundamental frequency  
TBD  
Measured at harmonic  
frequency  
Output power deviation  
Control voltage range  
–2  
+2  
6
7
VCTL1  
VCTL2  
1.4  
1.7  
V
V
V
A
A
A
Doubler operating  
mode  
1.5  
1.6  
1.7  
Power down mode  
6, 7  
VCTL1,2  
0.2  
–8  
Input and output return  
loss  
3, 10,  
11  
With external matching  
–12  
36  
dB  
dB  
C
C
A
3, 10,  
11  
1.8  
1.9  
Reverse isolation  
2f  
ISOr  
ICC  
30  
13, 15,  
16  
Current consumption  
for 12dBm output power  
90  
mA  
Current consumption in  
power down mode  
13, 15,  
16  
1.10  
2.0  
V
CTL1,2 0.2V  
ICC  
15  
µA  
%
A
C
Duty cycle  
100  
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter  
5
4786E–DECT–10/05  
7. Application Circuit  
VCC_CTL  
VCC1  
VCC2  
C11  
C5  
C6  
Output  
*
Input  
ATR7039  
C2  
C3  
*
C15  
C1  
C7  
* microstrip line  
VCTL1  
VCTL2  
6
ATR7039 [Preliminary]  
4786E–DECT–10/05  
ATR7039 [Preliminary]  
8. Ordering Information  
Extended Type Number  
Package  
Remarks  
ATR7039-PESG  
QFN16 - 4x4  
QFN16 - 4x4  
Tube, MOQ 750, Pb-free  
ATR7039-PEQG  
Taped and reeled, MOQ 6000, Pb-free  
9. Package Information  
7
4786E–DECT–10/05  
Atmel Corporation  
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San Jose, CA 95131, USA  
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Fax: 1(408) 487-2600  
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Postfach 3535  
74025 Heilbronn, Germany  
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Fax: (49) 71-31-67-2340  
2325 Orchard Parkway  
San Jose, CA 95131, USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 436-4314  
Regional Headquarters  
Microcontrollers  
2325 Orchard Parkway  
San Jose, CA 95131, USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 436-4314  
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Tel: 1(719) 576-3300  
Japan  
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1-24-8 Shinkawa  
Chuo-ku, Tokyo 104-0033  
Japan  
Tel: (81) 3-3523-3551  
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Fax: (44) 1355-242-743  
Literature Requests  
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Printed on recycled paper.  
4786E–DECT–10/05  

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