T2525N736-DDW_技术文档

Features

• No external components except PIN diode

• Supply-voltage range: 4.5 V to 5.5 V

• Automatic sensitivity adaptation (AGC)

• Automatic strong signal adaptation (ATC)

• Enhanced immunity against ambient light disturbances

• Available for carrier frequencies between 30 kHz to 76 kHz; adjusted by Zener diode

fusing

• TTL and CMOS compatible

• Suitable min. burst length ≥ 6 or 10 pulses/burst

IR Receiver

ASSP

Applications

• Audio video applications

• Home appliances

• Remote control equipment

T2525

Description

The IC T2525 is a complete IR receiver for data communication developed and opti-

mized for use in carrier-frequency-modulated transmission applications. Its function

can be described using the block diagram (see figure 1). The input stage meets two

main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly,

the pulsed photo-current signals are transformed into a voltage by a special circuit

which is optimized for low-noise applications. After amplification by a controlled gain

amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter

with a center frequency f₀which is equivalent to the chosen carrier frequency of the

input signal. The demodulator is used to convert the input burst signal into a digital

envelope output pulse and to evaluate the signal information quality, i.e. unwanted

pulses will be suppressed at the output pin. All this is done by means of an integrated

dynamic feedback circuit which varies the gain as a function of the present environ-

mental condition (ambient light, modulated lamps etc.). Other special features are

used to adapt to the current application to secure best transmission quality. The

T2525 operates in a supply-voltage range of 4.5 V to 5.5 V.

Block Diagram

Figure 1.

VS

IN

OUT

CGA &

filter

µC

Input

Demodulator

AGC / ATC & digital

control

Oscillator

Carrier frequency f

0

Modulated IR signal

min 6/10 pulses

GND

Rev. A3, 17-Oct-01

1 (13)

Preliminary Information

Ordering Information

Extended Type

PL²⁾

2

R_PU

30

D⁴⁾

Type

3)

Number

T2525N0xx¹⁾-yyy⁵⁾

T2525N1xx¹⁾-DDW

2090

Standard type: ≥10 pulses, enhanced sensibility, high data rate

1

30

Lamp type: ≥10 pulses, enhanced suppression of disturbances, secure

data transmission

T2525N2xx¹⁾-yyy⁵

T2525N3xx¹⁾-DDW

2

1

40

1373

Lamp type: ≥10 pulses, enhanced suppression of disturbances, secure

data transmission

T2525N6xx¹⁾-yyy⁵

T2525N7xx¹⁾-DDW

2

1

30

3415

Short burst type: ≥6 pulses, enhanced data rate

Notes: 1. xx means the used carrier frequency value f₀30,33,36,38,40,44 ,56 kHz.(76 kHz type on request)

2. Two pad layout versions (see figures 2 and 3) available for different assembly demand

3. Integrated pull-up resistor at PIN OUT (see electrical characteristics)

4. Typical data transmission rate up to bit/s with f₀= 56 kHz, V_S= 5 V (see figure 7)

5. yyy means kind of packaging:

.................... .......DDW -> unsawn wafers in box

.................... .......TAS -> SO8 in stick

.................... .......TAQ -> SO8 taped and reeled

.................... .......6AQ -> (on request, not standard; TSSOP8 taped 1and reeled)

Samples in SO8 package are available as T2525N038, T2525N238 and T2525N638.

Pad Layout

Figure 2. Pad layout 1 (DDW only)

GND

IN

OUT

T2525

FUSING

VS

2 (13)

T2525

Rev. A3, 17-Oct-01

T2525

Figure 3. Pad layout 2 (DDW, SO8 or TSSOP8)

GND

IN

(6)

(5)

(1)

VS

T2525

(3)

OUT

FUSING

Pin Description

Symbol

Function

1

VS

Supply voltage

2

n.c.

Not connected

Data output

3

OUT

n.c.

4

Not connected

Input PIN-diode

Ground

5

IN

6

GND

n.c.

7

Not connected

8

n.c.

Figure 4. Pinning SO8 and TSSOP8

VS

n.c.

1

2

3

4

8

7

6

5

n.c.

GND

IN

OUT

n.c.

3 (13)

Preliminary Information

Rev. A3, 17-Oct-01

Preliminary Information

Absolute Maximum Ratings

Parameter

Symbol

V_S

Value

-0.3 to 6

3

Unit

V

Supply voltage

Supply current

I_S

mA

V

Input voltage

V_IN

I_IN

-0.3 to V_S

0.75

Input DC current at V_S= 5 V

Output voltageV_O-0.3 to V_SV

Output current

mA

V

V_O

-0.3 to V_S

I_O

mA

°C

Operating temperature

Storage temperature

Power dissipation at T_amb= 25°C

T_amb

T_stg

P_tot

°C

mW

30

Thermal Resistance

Parameter

Symbol

R_thJA

Value

130

Unit

k/W

K/W

Junction ambient SO8

Junction ambient TSSOP8

R_thJA

tbd

Electrical Characteristics

Tamb = -25 to 85°C, VS = 4.5 to 5.5 V unless otherwise specified.

No.

1

Parameters

Supply

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Type*

1.1

1.2

2

Supply-voltage range

Supply current

Output

1

V_S

I_S

4.5

0.8

5

5.5

1.3

V

C

B

I_IN=0

1.1

mA

T_amb= 25°C;

Internal pull-up

resistor ¹⁾

2.1

1,3

R_PU

30/40

kΩ

A

see figure 11

I_L= 2 mA;

2.2

2.3

2.4

Output voltage low

Output voltage high

3,6

3,1

3,6

V_OL

V_OH

I_OCL

250

Vs

mV

V

B

see figure 11

V_S-

0.25

Output current

clamping

R₂= 0; see figure 11

V_IN= 0; see figure 11

8

mA

3

Input

3.1

Input DC current

5

I_{IN_DCMAX}

-85

µA

C

B

V_IN= 0; Vs = 5V,

Input DC-current; see

figure 6

3.2

-530

-960

T_amb= 25°C

*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

Notes: 1. Depending on version, see “Ordering Information”

2. BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the Pin OUT

3. After transformation of input current into voltage

4 (13)

T2525

Rev. A3, 17-Oct-01

T2525

Electrical Characteristics

Tamb = -25 to 85°C, VS = 4.5 to 5.5 V unless otherwise specified.

No.

Parameters

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Type*

3.3

Min. detection

threshold current; see

figure 5

Test signal:

see figure 10

V_S= 5 V,

3

I_Eemin

-520

pA

B

T_amb= 25°C,

I_{IN_DC}=1µA;

square pp,

burst N=16,

f=f₀; t_PER= 10ms,

Fig. 10;

BER = 50²⁾

3.4

Min. detection

threshold current with

AC current

disturbance

IIN_AC100 = 3 µA at

100 Hz

Test signal:

3

I_Eemin

-800

pA

C

see figure 10

VS = 5 V, T_amb= 25°C,

I_{IN_DC}= 1µA,

square pp,

burst N = 16,

f = f0; t_PER= 10 ms,

Fig. 10;

BER = 50%²⁾

3.5

Max. detection

threshold current with

V_IN> 0V

Test signal:

3

I_Eemax

-400

µA

D

see figure 10

V_S= 5V, T_amb= 25°C,

I_{IN_DC}= 1µA;

square pp,

burst N = 16,

f = f₀; t_PER= 10ms,

Fig. 10; BER=5%²⁾

4

Controlled Amplifier and Filter

Max. value of variable

gain (CGA)

G_VARMAX

G_VARMIN

G_MAX

51

-5

dB

D

4.1

Min. value of variable

gain (CGA)

4.2

4.3

Total internal

amplification³⁾

71

*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

Notes: 1. Depending on version, see “Ordering Information”

2. BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the Pin OUT

3. After transformation of input current into voltage

5 (13)

Preliminary Information

Rev. A3, 17-Oct-01

Preliminary Information

Electrical Characteristics

Tamb = -25 to 85°C, VS = 4.5 to 5.5 V unless otherwise specified.

No.

Parameters

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Type*

4.4

Center frequency

fusing accuracy of

bandpass

f_{0_FUSE}

-3

f₀

+3

%

A

V_S= 5 V, T_amb= 25°C

4.5

4.6

Overall accuracy

center frequency of

bandpass

f₀

-6.7

f₀

+4.1

%

C

BPF bandwidth:

type N0 - N3

-3dB; f₀= 38 kHz;

see fig 8

B

3.5

5.4

kHz

C

BPF bandwidth:

type N6, N7

-3dB; f₀= 38 kHz

*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

Notes: 1. Depending on version, see “Ordering Information”

2. BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the Pin OUT

3. After transformation of input current into voltage

ESD

All pins

2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7

Reliability

Electrical qualification (1000h) in molded S08 plastic package

Typical Electrical Curves at T_amb= 25°C

Figure 5. I_Eeminvs. I_{IN_DC}, V_S= 5 V

6 (13)

T2525

Rev. A3, 17-Oct-01

T2525

Figure 6. V_INvs. I_{IN_DC}, V_S= 5 V

Figure 7. Data transmission rate, V_S= 5 V

Figure 8. Typical bandpass curve

Q = f₀/ ∆f; ∆f = -3dB values. Example: Q = 1/ (1.047 - 0.954) = 11

7 (13)

Preliminary Information

Rev. A3, 17-Oct-01

Preliminary Information

Figure 9. Illustration of used terms

1066 µs

Period (P=16)

Burst (N=16 pulses)

533 µs

IN

1

7

16

7

33 µs

t

DON

OUT

DOFF

533 µs

Envelope 1

Envelope 16

17056µs / data word

OUT

Telegram pause

Data word

17 ms

Data word

t

T

= 62 ms

REP

Example: f = 30 kHz, burst with 16 pulses, 16 periods

Test Circuit

Figure 10.

I

=

∆ U1/400K

Ee

= 5 V

DD

V

∆U1

1nF

400k

I

IN_DC

R1 = 220

VS

20k

I

Ee

IN

T2525

GND

IN

OUT

1nF

V

PULSE

∆U2

~

C1

I

20k

= ∆ U /40k

2

IN_DC

f

0

4.7µF

16

I

IN_AC100

-

DC

+

t

= 10ms

PER

8 (13)

T2525

Rev. A3, 17-Oct-01

T2525

Application Circuit

Figure 11.

V

= 5V

DD

*) optional

R2* > 2.4k

R1 = 220

RPU

I

S

VS

I

OCL

L

IN

T2525

µC

OUT

I

IN

GND

V

IN

O

I

IN_DC

C1=4.7µF

C2* = 470pF

Ee

9 (13)

Preliminary Information

Rev. A3, 17-Oct-01

Preliminary Information

Chip Dimensions

Figure 12. Chip size in µm

1130,1030

GND

IN

723,885

351,904

scribe

VS

63,660

T2525

63,70

FUSING

OUT

0,0

width

Note: Pad coordinates are for lower left corner of the pad in µm from the origin 0,0

Dimensions

Length incl. scribe

Width incl. scribe

Thickness

1.15 mm

1.29 mm

290 µ ± 5%

90 µ x 90 µ

70 µ x 70 µ

Pads

Fusing pads

AlSiTi

Pad metallurgy

Finish

Si₃N₄thickness 1.05 µm

10 (13)

T2525

Rev. A3, 17-Oct-01

T2525

Package Information

Figure 13.

Package SO8

Dimensions in mm

5.2

4.8

5.00

4.85

3.7

1.4

0.25

0.2

0.4

3.8

0.10

1.27

6.15

5.85

3.81

8

5

technical drawings

according to DIN

specifications

1

4

Figure 14.

Package TSSO8

Dimensions in mm

3.1

2.9

5.0

4.8

0.9

0.8

0.20

0.13

0.38

0.25

0.15

0.05

3.1

2.9

0.65

1.95

8

5

technical drawings

according to DIN

specifications

1

4

11 (13)

Preliminary Information

Rev. A3, 17-Oct-01

Preliminary Information

Ozone Depleting Substances Policy Statement

It is the policy of Atmel Germany GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems

with respect to their impact on the health and safety of our employees and the public, as well as their impact on

the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid

their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these

substances.

Atmel Germany GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed

in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Atmel Germany GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and

do not contain such substances.

12 (13)

T2525

Rev. A3, 17-Oct-01

Atmel Wireless & Microcontrollers Sales Offices

France

3, Avenue du Centre

78054 St.-Quentin-en-Yvelines

Cedex

Tel: +33 1 30 60 70 00

Fax: +33 1 30 60 71 11

Sweden

Hong Kong

Kavallerivaegen 24, Rissne

17402 Sundbyberg

Tel: +46 8 587 48 800

Fax: +46 8 587 48 850

Room #1219,

Chinachem Golden Plaza

77 Mody Road, Tsimhatsui East

East Kowloon, Hong Kong

Tel: +852 23 789 789

Fax: +852 23 755 733

United Kingdom

Easthampstead Road

Bracknell

Berkshire RG12 1LX

Tel: +44 1344 707 300

Fax: +44 1344 427 371

Germany

Erfurter Strasse 31

85386 Eching

Tel: +49 89 319 70 0

Fax: +49 89 319 46 21

Korea

25-4, Yoido-Dong, Suite 605,

Singsong Bldg.

Youngdeungpo-Ku

150-010 Seoul

Tel: +822 785 1136

Fax: +822 785 1137

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45128 Essen

Tel: +49 201 247 30 0

Fax: +49 201 247 30 47

2325 Orchard Parkway

San Jose, California 95131

Tel: +1 408 441 0311

Fax: +1 408 436 4200

Rep. of Singapore

Keppel Building #03-00

25 Tampines Street 92,

Singapore 528877

Theresienstrasse 2

74072 Heilbronn

Tel: +49 7131 67 36 36

Fax: +49 7131 67 31 63

USA Eastern

1465 Route 31, Fifth floor

Annandale

New Jersey 08801

Tel: +1 908 848 5208

Fax: +1 908 848 5232

Tel: +65 260 8223

Fax: +65 787 9819

Taiwan, R.O.C.

8F-2, 266 Sec.1 Wen Hwa 2 Rd.

Lin Kou Hsiang,

244 Taipei Hsien

Tel: +886 2 2609 5581

Fax: +886 2 2600 2735

Italy

Via Grosio, 10/8

20151 Milano

Tel: +39 02 38 03 71

Fax: +39 02 38 03 72 34

Spain

Japan

Principe de Vergara, 112

28002 Madrid

Tonetsushinkawa Bldg.

1-24-8 Shinkawa Chuo Ku

Tokyo 104-0033

Tel: +34 91 564 51 81

Fax: +34 91 562 75 14

Tel: +81 3 3523 3551

Fax: +81 3 3523 7581

Web Site

http://www.atmel-wm.com

Atmel Germany GmbH makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty

which is detailed in Atmel Germany GmbH’s Terms and Conditions. The Company assumes no responsibility for any errors which may appear in

this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commit-

ment to update the information contained herein. No licenses to patents or other intellectual property of Atmel Germany GmbH are granted by

the Company in connection with the sale of Atmel Germany GmbH products, expressly or by implication. Atmel Germany GmbH’s products are

not authorized for use as critical components in life support devices or systems.

Data sheets can also be retrieved fron the Internet: http://www.atmel-wm.com

Rev. A3, 17-Oct-01


型号：	T2525N736-DDW
厂家：	ATMEL
描述：	Telecom Circuit, 1-Func, CMOS, WAFER-10 电信电信集成电路
文件：	总13页 (文件大小：169K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

T2525N736-DDW [ATMEL]

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