T2525_09 [ATMEL]
IR Receiver ASSP; 红外接收器ASSP
ATMEL 
Features
• No External Components Except PIN Diode
• Supply-voltage Range: 4.5V to 5.5V
• Highest Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong
Signal Adaption (ATC)
• Highest Immunity Against Disturbances from Daylight and Lamps
• Available for Carrier Frequencies between 30 kHz to 76 kHz; Adjusted
by Zener Diode Fusing
• TTL and CMOS Compatible
IR Receiver
ASSP
• Suitable Minimum Burst Length ≥ 10 Pulses/Burst
Applications
• Home Entertainment Applications (Audio/Video)
• Home Appliances
T2525
• Remote Control Equipment
1. Description
The IC T2525 is a complete IR receiver for data communication that was developed
and optimized for use in carrier-frequency-modulated transmission applications. The
IC offers highest sensitivity as well as highest suppression of noise from daylight and
lamps. The T2525 is available with broadest range of carrier frequencies (30, 33, 36,
37, 38, 40, 44, 56, 76 kHz) and 5 different noise suppression regulation types (stan-
dard, lamp, noise, short burst, data rate) covering requirements of high-end remote
control solutions (please refer to selection guide available for T2525/ATA2526). The
T2525 operates in a supply voltage range of 4.5V to 5.5V.
The function of T2525 can be described using the block diagram (see Figure 1-1 on
page 2). The input stage meets two main functions. First, it provides a suitable bias
voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed
into a voltage by a special circuit which is optimized for low-noise applications. After
amplification by a Controlled Gain Amplifier (CGA), the signals have to pass a tuned
integrated narrow bandpass filter with a center frequency f0 which is equivalent to the
chosen carrier frequency of the input signal. The demodulator is used to convert the
input burst signal into a digital envelope output pulse and to evaluate the signal infor-
mation quality, i.e., unwanted pulses will be suppressed at the output pin. All this is
done by means of an integrated dynamic feedback circuit which varies the gain as a
function of the present environmental condition (ambient light, modulated lamps etc.).
Other special features are used to adapt to the current application to secure best
transmission quality.
4657G–AUTO–09/09
Figure 1-1. Block Diagram
VS
IN
OUT
CGA and
filter
Micro-
controller
Input
Demodulator
AGC/ATC
and digital control
Oscillator
Carrier frequency f0
T2525
Modulated IR signal
min 6 or 10 pulses
GND
2. Pin Configuration
Figure 2-1. Pinning SO8 and TSSOP8
VS
NC
1
2
3
4
8
7
6
5
NC
NC
GND
IN
OUT
NC
Table 2-1.
Pin Description
Pin
1
Symbol
VS
Function
Supply voltage
Not connected
Data output
2
NC
3
OUT
NC
4
Not connected
Input PIN diode
Ground
5
IN
6
GND
NC
7
Not connected
Not connected
8
NC
2
T2525
4657G–AUTO–09/09
T2525
3. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
VS
Value
–0.3 to +6
3
Unit
V
Supply voltage
Supply current
IS
mA
V
Input voltage
VIN
IIN
–0.3 to VS
0.75
Input DC current at VS = 5V
Output voltage
mA
V
VO
–0.3 to VS
10
Output current
IO
mA
°C
Operating temperature
Storage temperature
Power dissipation at Tamb = 25°C
Tamb
Tstg
Ptot
–25 to +85
–40 to +125
°C
mW
30
4. Thermal Resistance
Parameter
Symbol
RthJA
Value
130
Unit
K/W
K/W
Junction ambient SO8
Junction ambient TSSOP8
RthJA
150
3
4657G–AUTO–09/09
5. Electrical Characteristics
Tamb = 25°C, VS = 5V unless otherwise specified.
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1
Supply
1.1
1.2
2
Supply-voltage range
Supply current
Output
1
1
VS
IS
4.5
0.8
5
5.5
1.4
V
C
B
IIN = 0
1.1
mA
Internal pull-up
resistor(1)
Tamb = 25°C;
see Figure 6-7 on page 8
2.1
1,3
RPU
30/40
kΩ
A
IL = 2 mA;
see Figure 6-7 on page 8
2.2
2.3
2.4
3
Output voltage low
Output voltage high
3,6
3,1
3,6
VOL
VOH
IOCL
250
Vs
mV
V
B
B
B
VS – 0.25
Output current
clamping
R2 = 0;
see Figure 6-7 on page 8
8
mA
Input
VIN = 0;
see Figure 6-7 on page 8
3.1
Input DC current
5
5
IIN_DCMAX
IIN_DCMAX
–85
µA
µA
C
B
Input DC current;
Figure 6-2 on page 6
VIN = 0; Vs = 5V,
Tamb = 25°C
3.2
–530
–960
Test signal:
see Figure 6-6 on page 8
VS = 5V,
Tamb = 25°C,
IIN_DC = 1 µA;
square pp,
burst N = 16,
f = f0; tPER = 10 ms,
Figure 6-6 on page 8;
BER = 50(2)
Minimum detection
threshold current;
Figure 6-1 on page 6
3.3
3
IEemin
–500
pA
B
Test signal:
see Figure 6-6 on page 8
VS = 5V,
Tamb = 25°C,
IIN_DC = 1 µA,
square pp,
Minimum detection
threshold current with
AC current disturbance
IIN_AC100 = 3 µA at
100 Hz
3.4
3
IEemin
–750
pA
C
burst N = 16,
f = f0; tPER = 10 ms,
Figure 6-6 on page 8;
BER = 50%(2)
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
4
T2525
4657G–AUTO–09/09
T2525
5. Electrical Characteristics (Continued)
Tamb = 25°C, VS = 5V unless otherwise specified.
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Test signal:
see Figure 6-6 on page 8
VS = 5 V, Tamb = 25°C,
IIN_DC = 1 µA;
Maximum detection
3.5
threshold current with square pp,
3
IEemax
–400
µA
D
VIN > 0V
burst N = 16,
f = f0; tPER = 10 ms,
Figure 6-6 on page 8;
BER = 5%(2)
4
Controlled Amplifier and Filter
Maximum value of
variable gain (CGA)
4.1
GVARMAX
GVARMIN
GMAX
f0_FUSE
f0
51
-5
dB
dB
dB
%
D
D
D
A
C
C
C
Minimum value of
variable gain (CGA)
4.2
4.3
4.4
4.5
Total internal
71
f0
amplification(3)
Center frequency fusing
accuracy of bandpass
VS = 5V, Tamb = 25°C
–3
+3
Overall accuracy center
frequencyofbandpass
–6.7
f0
+4.1
%
BPF bandwidth:
type N0 - N3
–3 dB; f0 = 38 kHz; see
Figure 6-4 on page 7
B
3.5
5.4
kHz
kHz
4.6
BPF bandwidth:
type N6, N7
–3 dB; f0 = 38 kHz
Figure 6-4 on page 7
B
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
5.1
5.2
ESD
All pins 2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7
Reliability
Electrical qualification (1000h) in molded SO8 plastic package
5
4657G–AUTO–09/09
6. Typical Electrical Curves at Tamb = 25°C
Figure 6-1. IEemin versus IIN_DC, VS = 5V
100
10
0.96
1
0.52
0
0.1
1.0
10.0
IIN_DC (µA)
100.0
1000.0
Figure 6-2. VIN versus IIN_DC, VS = 5V
3
2.94
2.79
2.44
2
1
0
1.14
0.0
0.1
1.0
10.0
100.0
1000.0
IIN_DC (µA)
Figure 6-3. Data Transmission Rate, VS = 5V
5000
4634
Short burst type
3415
4000
3000
2000
1000
0
Standard type
2836
Lamp type
1863
2090
1373
25
35
45
55
65
75
85
f0 (kHz)
6
T2525
4657G–AUTO–09/09
T2525
Figure 6-4. Typical Bandpass Curve
1.1
1.0
0.9
0.8
-3 dB
-3 dB
0.7
0.6
0.5
0.4
Δf
0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
f/f0
Q = f0/Δf; Δf = -3 dB values. Example: Q = 1/(1.047 – 0.954) = 11
Figure 6-5. Illustration of Used Terms
1066 µs
Period (P = 16)
533 µs
7
Burst (N = 16 pulses)
IN
1
16
7
7
33 µs
t
t
533 µs
DON
OUT
DOFF
Envelope 1
Envelope 16
17056 µs/data word
OUT
Telegram pause
Data word
17 ms
Data word
t
T
= 62 ms
REP
Example: f = 30 kHz, burst with 16 pulses, 16 periods
7
4657G–AUTO–09/09
Figure 6-6. Test Circuit
IEe = ΔU1/400 kΩ
VDD = 5V
ΔU1
400 kΩ
1 nF
IIN_DC
R1 = 220Ω
VS
IIN
20 kΩ
IN
T2525
GND
OUT
1 nF
IEe
VPULSE
ΔU2
+
C1
4.7 µF
IIN_DC = ΔU2/40 kΩ
20 kΩ
f0
16
-
IIN_AC100
DC
+
t
PER = 10 ms
Figure 6-7. Application Circuit
(1) optional
VDD = 5V
R1 = 220Ω
R2(1) > 2.4 kΩ
RPU
IS
VS
IOCL
IL
IN
T2525
GND
Microcontroller
IIN
OUT
VIN
VO
+
IIN_DC IEe
C
1 = 4.7 µF
C2(1) = 470 pF
8
T2525
4657G–AUTO–09/09
T2525
7. Chip Dimensions
Figure 7-1. Chip Size in µm
1130,1030
GND
351,904
IN
723,885
scribe
VS
63,660
T2525
63,70
Fusing
OUT
0,0
width
Note:
Pad coordinates are for lower left corner of the pad in µm from the origin 0,0
Dimensions
Length inclusive scribe
Width inclusive scribe
Thickness
1.15 mm
1.29 mm
290µ ± 5%
90µ × 90µ
70µ × 70µ
AlCu/AlSiTi(1)
0.8 µm
Pads
Fusing pads
Material
Pad metallurgy
Finish
Thickness
Material
Si3N4/SiO2
0.7/0.3 µm
Thickness
Note:
Value depends on manufacture location.
9
4657G–AUTO–09/09
8. Ordering Information
Delivering: unsawn wafers (DDW) in box.
PL(2)
RPU
D(4)
Type(5)
(3)
Extended Type Number
T2525S0xx(1)C-DDW
T2525S1xx(1)C-DDW
2
1
30
30
2090 Standard type: ≥ 10 pulses, enhanced sensibility, high data rate
2090 Standard type: ≥ 10 pulses, enhanced sensibility, high data rate
Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure
data transmission
T2525S2xx(1)C-DDW
T2525S3xx(1)C-DDW
2
1
40
40
1373
Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure
data transmission
1373
T2525S6xx(1)C-DDW
T2525S7xx(1)C-DDW
2
1
30
30
3415 Short burst type: ≥ 6 pulses, enhanced data rate
3415 Short burst type: ≥ 6 pulses, enhanced data rate
Notes: 1. xx means the used carrier frequency value f0 30, 33, 36, 38, 40, 44, 56 kHz. (76 kHz type on request)
2. Two pad layout versions (see Figure 9-1 and Figure 9-2) available for different assembly demand
3. Integrated pull-up resistor at pin OUT (see “Electrical Characteristics”)
4. Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5V (see Figure 6-3 on page 6)
5. On request: noise type, data rate type
9. Pad Layout
Figure 9-1. Pad Layout 1
GND
IN
OUT
T2525
VS
Fusing
Figure 9-2. Pad Layout 2
(6)
(5)
GND
IN
(1)
VS
T2525
(3)
OUT
Fusing
10
T2525
4657G–AUTO–09/09
T2525
10. Revision History
Please note that the following page numbers referred to in this section refer to the specific revision
mentioned, not to this document.
Revision No.
History
• Put datasheet in newest template
• Ordering Information table changed
4657G-AUTO-09/09
• Features on page 1 changed
• Applications on page 1 changed
• Section 1 “Description” on page 1 changed
4657F-AUTO-10/06
4657E-AUTO-04/06
• Section 5 “Electrical Characteristics” number 3.3 and 3.4 on page 4
changed
• Section 8 “Ordering Information” on page 10 changed
• Section 9 “Pad Layout” on page 10 changed
• Put datasheet in a new template
• Section 8 “Ordering Information” on page 10 changed
11
4657G–AUTO–09/09
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4657G–AUTO–09/09
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