SI3311-H [AUK]
SI3311-H;SI3311-H
Semiconductor
IRED
Features
• Colorless transparency lens type
• φ3mm(T-1) all plastic mold type
• Low power consumption
• High radiant intensity
Outline Dimensions
unit : mm
STRAIGHT TYPE
STOPPER TYPE
3.0±0.2
3.0±0.2
0.2
4.0±
0.2
4.0±
0.2
5.0±
0.2
5.0±
0.2
5.5±
0.5
0.5
25.0 M IN
25.0 M IN
1.0 M IN
1.0 M IN
2.54 NOM
2.54 NOM
1 2
1 2
0.2
3.8±
0.2
3.8±
PIN Connections
1.Anode
2.Cathode
KLI-8001-001
1
SI3311-H
Absolute maximum ratings
Characteristic
Symbol
PD
Ratings
Unit
mW
mA
A
Power Dissipation
150
Forward Current
*1Peak Forward Current
IF
100
IFP
1
Reverse Voltage
VR
4
V
-25∼ 85
℃
Operating Temperature
Storage Temperature
*2Soldering Temperature
Topr
Tstg
Tsol
-30∼ 100
℃
260℃ for 5 seconds
*1.Duty ratio = 1/16, Pulse width = 0.1ms
*2. Keep the distance more than 2.0mm from PCB to the bottom of IRED package
Electrical Characteristics
Characteristic
Symbol
Test Condition
IF= 50mA
IF= 50mA
IF= 50mA
IF= 50mA
VR=4V
Min
Typ Max Unit
Forward Voltage
VF
-
12
-
1.3
1.7
V
mW/Sr
nm
Radiant Intensity
Peak Wavelength
Spectrum Bandwidth
Reverse Current
*3Half angle
IE
25
-
950
50
-
λP
Δ
-
-
nm
λ
-
-
10
-
uA
I
R
θ1/2
IF= 50mA
-
±17
deg
*3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity
KLI-8001-001
2
SI3311-H
Characteristic Diagrams
Fig. 1 IF - VF
Fig. 2 IV - IF
Forward Voltage VF [V]
Forward Current IF [mA]
Fig. 3 IF – Ta
Fig.4 Spectrum Distribution
Ambient Temperature Ta [℃]
Wavelength λ [nm]
Fig. 5 Radiation Diagram
Relative Luminous Intensity Iv [%]
KLI-8001-001
3
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