SRC1212 [AUK]
NPN Silicon Transistor; NPN硅晶体管
| 型号： | SRC1212 |
| 厂家： | 
AUK CORP |
| 描述： | NPN Silicon Transistor |
| 文件： | 总2页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SRC1212
Semiconductor
NPN Silicon Transistor
Descriptions
• Switching application
• Interface circuit and driver circuit application
Features
• With built-in bias resistors
• Simplify circuit design
• Reduce a quantity of parts and manufacturing process
• High packing density
Ordering Information
Type NO.
Marking
Package Code
TO-92
SRC1212
SRC1212
Outline Dimensions
unit : mm
3.45±0.1
2.25±0.1
4.5±0.1
• Equivalent Circuit
C(OUT)
0.4±0.02
B(IN)
R1
2.06±0.1
R1 = 100KΩ
E(COMMON)
1.27 Typ.
2.54 Typ.
1 2 3
PIN Connections
1. Emitter
2. Collector
3. Base
KSR-9018-000
1
SRC1212
Absolute maximum ratings
Characteristic
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
50
50
V
5
V
100
mA
mW
°C
Power Dissipation
PD
625
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~ 150
°C
Electrical Characteristics
Characteristic
(Ta=25°C)
Symbol
ICBO
Test Condition
Min. Typ. Max. Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VCB=50V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1mA
IC=10mA, IB=0.5mA
VCE=10V, IC=5mA
-
-
-
-
500
500
-
nA
nA
-
IEBO
-
hFE
120
-
Collector-Emitter Saturation Voltage
Transition Frequency
VCE(SAT)
fT*
-
-
-
0.1
250
100
0.3
-
V
MHz
KΩ
Input Resistance
R1
-
* : Characteristic of Transistor Only
Electrical Characteristic Curves
Fig. 2 VCE(SAT) - IC
Fig. 1 hFE - IC
KSR-9018-000
2
相关型号：
©2020 ICPDF网 联系我们和版权申明