STC401L [AUK]
NPN Silicon Transistor; NPN硅晶体管
| 型号： | STC401L |
| 厂家： | 
AUK CORP |
| 描述： | NPN Silicon Transistor |
| 文件： | 总4页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STC401L
Semiconductor
NPN Silicon Transistor
Features
• Low saturation switching application
• Voltage regulator application
• Low saturation : VCE(SAT)=0.4V Max.
• High Voltage : VCEO=60V Min.
Ordering Information
Type NO.
Marking
Package Code
STC401L
STC401L
TO-92L
Outline Dimensions
unit : mm
PIN Connections
1. Emitter
2. Collector
3. Base
KST-I011-000
1
STC401L
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
80
60
V
5
V
1
A
Collector dissipation
Junction temperature
Storage temperature
PC
1000
150
-55~150
mW
°C
°C
Tj
Tstg
Electrical Characteristics
Characteristic
Symbol
BVCEO
ICBO
Test Condition
Min. Typ. Max. Unit
Collector-Emitter breakdown voltage
IC=1mA, IB=0
60
-
-
V
Collector cut-off current
VCB=60V, IE=0
-
-
0.1
µA
µA
Emitter cut-off current
IEBO
VEB=5V, IC=0
-
-
-
-
0.1
400
-
VCE=2V, IC=100mA
VCE=2V, IC=1A
200
80
DC current gain
hFE *
-
Base-Emitter on voltage
Collector-Emitter saturation voltage
Collector output capacitance
Transition frequency
VBE(ON)
VCE(sat)
Cob
VCE=2V, IC=500mA
IC=500mA, IB=50mA
VCB=10V, IE=0, f=1MHz
VCB=10V, IC=50mA
-
-
-
-
-
-
1.2
0.4
-
V
V
10
160
pF
fT
-
MHz
* hFE rank : 200~400 Only
KST-I011-000
2
STC401L
Electrical Characteristic Curves
Fig. 2 VCE - IC
Fig. 4 Cob - VCB
Fig. 6 IC - VCE
Fig. 1 PC - Ta
Fig. 3 hFE- C
I
Fig. 5 IC - VCE
KST-I011-000
3
STC401L
Electrical Characteristic Curves
Fig. 7 fT - IC
KST-I011-000
4
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