STC405 [AUK]
NPN Silicon Transistor; NPN硅晶体管
| 型号： | STC405 |
| 厂家： | 
AUK CORP |
| 描述： | NPN Silicon Transistor |
| 文件： | 总3页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STC405
Semiconductor
NPN Silicon Transistor
Features
· Low saturation switching application
· Voltage regulator application
· High Voltage : VCEO =60V Min.
Ordering Information
Type NO.
Marking
Package Code
TO-220F
STC405
STC405
Outline Dimensions
unit : mm
PIN Connections
1. Base
2. Collector
3. Emitter
KST-H002-000
1
STC405
Absolute maximum ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
80
60
V
5
5
V
Collector current
A
Collector dissipation (Tc=25℃)
PC
25
W
°C
°C
Junction temperature
Storage temperature
Tj
150
Tstg
-55~150
Electrical Characteristics
Characteristic
Symbol
ICBO
Test Condition
Min. Typ. Max. Unit
mA
mA
V
Collector cut-off current
Emitter cut-off current
VCB=80V, IE=0
VEB=5V, IC=0
IC=1mA, IB=0
VCE=5V, IC=1A
VCE=5V, IC=3A
-
-
-
-
-
-
-
10
10
-
IEBO
Collector-Emitter breakdown voltage V(BR)CEO
60
200
80
400
-
DC current gain
hFE
-
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
VCE(sat)
VBE(SAT)
IC=3A, IB=300mA
IC=3A, IB=300mA
-
-
-
-
1
V
V
1.5
Transition frequency
fT
VCB=5V, IC=50mA
-
-
8
-
-
MHz
pF
Collector output capacitance
* HFE rank : 200~400 Only
Cob
VCB=10V, IE=0, f=1MHz
25
KST-H002-000
2
STC405
Electrical Characteristic Curves
Fig. 2 VCE(sat) - IC
Fig. 1 PC - Ta
Fig. 3 hFE- C
I
Fig. 4 -IC - VCE
C
Fig. 5 Safe operating Area
KST-H002-000
3
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