STK0380P [AUK]
Advanced Power MOSFET; 先进的功率MOSFET
| 型号： | STK0380P |
| 厂家： | 
AUK CORP |
| 描述： | Advanced Power MOSFET |
| 文件： | 总4页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary
VGS
STK0380P
Semiconductor
Advanced Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
• High Voltage: BVDSS=800V(Min.)
• Low Crss : Crss=5.0F(Typ.)
• Low gate charge : Qg=18nC(Typ.)
• Low RDS(on) :RDS(on)=4.8Ω(Max.)
Ordering Information
Type NO.
Marking
Package Code
TO-220AB-3L
STK0380P
STK0380
Outline Dimensions
unit : mm
Φ3.70 Max.
9.80~10.20
1.37 Max.
1.62 Max.
0.90 Max.
2.54 Typ.
2.54 Typ.
PIN Connections
1. Gate
2. Drain
3. Source
Preliminary
1
Preliminary
STK0380P
Absolute maximum ratings
Characteristic
(Tc=25°C)
Symbol
VDSS
Rating
800
±30
Unit
V
Drain-source voltage
Gate-source voltage
VGSS
V
TC=25℃
ID
3.0
A
Drain current (DC)
TC=100℃
1.9
A
*
Drain current (Pulsed)
IDM
PD
12
A
Drain power dissipation
107
3
W
A
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
②
②
①
①
IAS
EAS
IAR
EAR
TJ
320
12
mJ
A
10.7
150
-55~150
mJ
°C
°C
Storage temperature range
Tstg
* Limited by maximum junction temperature
Characteristic
Symbol
Rth(J-C)
Rth(J-A)
Typ.
Max
1.17
62.5
Unit
Junction-case
-
-
Thermal
resistance
℃/W
Junction-ambient
Preliminary
2
Preliminary
STK0380P
Electrical Characteristics
Characteristic
(Tc=25°C)
Symbol
Test Condition
ID=250 ㎂, VGS=0V
ID=250 ㎂, VGS= VDS
VDS=800V, VGS=0V
VDS=0V, VGS=±30V
VGS=10V, ID=1.5A
VDS=50V, ID=1.5A
Min. Typ. Max. Unit
Drain-source breakdown voltage
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
800
-
-
5.0
10
±100
4.8
-
V
Gate threshold voltage
3.0
-
-
V
Drain-source cut-off current
Gate leakage current
-
㎂
㎁
Ω
-
-
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
④
-
4.0
3
④
-
S
Ciss
-
562
50
5.0
15
43.5
22.5
32
18
3.4
5.9
705
70
7.5
40
95
55
75
21.5
-
VGS=0V, VDS=25V
f=1 MHz
Coss
Crss
-
㎊
㎱
nC
-
td(on)
tr
td(off)
tf
-
VDD=400V, ID=3.0A
RG=25Ω
-
Turn-off delay time
Fall time
-
③④
③④
-
Total gate charge
Qg
-
VDS=640V, VGS=10V
ID=3.0A
Gate-source charge
Gate-drain charge
Qgs
-
Qgd
-
-
Source-Drain Diode Ratings and Characteristics
(Tc=25°C)
Characteristic
Symbol
Test Condition
Min Typ Max Unit
Source current (DC)
IS
ISP
VSD
trr
-
-
-
-
-
-
3.0
12
1.4
-
Integral reverse diode
in the MOSFET
A
Source current (Pulsed)
Forward voltage
①
④
-
VGS=0V, IS=3.0A
-
V
Reverse recovery time
Reverse recovery charge
642
4.0
㎱
μC
IS=3.0A, VGS=0V
dIS/dt=100A/㎲
Qrr
-
Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature
② L=67mH, IAS=3.0A, VDD=50V, RG=25Ω
③ Pulse Test : Pulse width≤300 ㎲, Duty cycle≤2%
④ Essentially independent of operating temperature
Preliminary
3
Preliminary
STK0380P
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
Preliminary
4
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