STK0765BF [AUK]
Advanced Power MOSFET; 先进的功率MOSFET
| 型号： | STK0765BF |
| 厂家： | 
AUK CORP |
| 描述： | Advanced Power MOSFET |
| 文件： | 总8页 (文件大小：396K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STK0765BF
Semiconductor
Advanced Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
• High Voltage: BVDSS=650V(Min.)
• Low Crss : Crss=13pF(Typ.)
• Low gate charge : Qg=32nC(Typ.)
• Low RDS(on) :RDS(on)=1.2Ω(Typ.)
Ordering Information
Type NO.
Marking
Package Code
STK0765BF
STK0765
TO-220F-3L
Outline Dimensions
unit : mm
Φ3.05~3.35
9.80~10.20
2.70 Max.
1.07 Min.
0.90 Max.
0.60 Max.
2.54 Typ.
2.54 Typ.
1
2
3
PIN Connections
1. Gate
2. Drain
3. Source
KSD-T0O016-001
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STK0765BF
Absolute maximum ratings
Characteristic
(Tc=25°C)
Symbol
VDSS
Rating
650
±30
7
Unit
V
Drain-source voltage
Gate-source voltage
VGSS
V
(Tc=25℃)
A
Drain current (DC)
ID
(Tc=100℃)
4.4
28
A
*
Drain current (Pulsed)
IDP
PD
A
Drain power dissipation
52
W
mJ
A
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
②
①
①
EAS
IAR
EAR
340
5.2
13
mJ
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
TJ
Tstg
150
-55~150
°C
Characteristic
Symbol
Typ.
Max
2.4
Unit
Junction-case
Junction-ambient
Rth(J-C)
Rth(J-a)
-
-
Thermal
resistance
℃/W
62.5
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STK0765BF
Electrical Characteristics
Characteristic
(Tc=25°C)
Symbol
BVDSS
VGS(th)
IDSS
Test Condition
Min. Typ. Max. Unit
Drain-source breakdown voltage
ID=250μA, VGS=0
650
-
-
4.0
10
±100
1.6
-
V
Gate threshold voltage
ID=250μA, VDS= VGS
VDS=650V, VGS=0V
VDS=0V, VGS=±30V
VGS=10V, ID=3.5A
VDS=10V, ID=3.5A
2.0
-
-
V
Drain-source cut-off current
Gate leakage current
-
μA
nA
Ω
IGSS
-
-
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
④
RDS(ON)
gfs
-
1.2
8.1
974
105
13
18
19
72
28
32
6.5
11
④
-
S
Ciss
Coss
Crss
td(on)
tr
-
1460
236
20
-
VGS=0V, VDS=25V, f=1MHz
pF
ns
-
-
-
VDD=300V, ID=7A
RG=25Ω
-
-
Turn-off delay time
Fall time
td(off)
tf
-
-
③④
-
-
Total gate charge
Qg
-
48
9.8
17
VDS=300V, VGS=10V
ID=7A
Gate-source charge
Gate-drain charge
Qgs
-
nC
③④
Qgd
-
Source-Drain Diode Ratings and Characteristics
(Tc=25°C)
Min Typ Max Units
Characteristic
Continuous source current
Pulsed-source current
Forward voltage
Symbol
Test Condition
IS
ISM
VSD
trr
-
-
-
-
-
-
7
28
1.4
-
Integral reverse diode
in the MOSFET
A
①
④
-
VGS=0V, IS=7A
-
V
Reverse recovery time
Reverse recovery charge
648
4.8
ns
uC
Is=7A, VGS=0
dIS/dt=100A/us
Qrr
-
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=10mH, IAS=7A, VDD=50V, RG=25Ω , starting TJ=25℃
③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤2%
④ Essentially independent of operating temperature
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STK0765BF
Electrical Characteristic Curves
Fig. 2 ID - VGS
Fig. 1 ID - VDS
℃
:
-
Fig. 3 RDS(on) - ID
Fig. 4 IS - VSD
℃
Fig. 5 Capacitance - VDS
Fig.6 VGS - QG
℃
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STK0765BF
Fig.8 RDS(on) - TJ
Fig. 7 VDSS - TJ
C
C
Fig. 9 ID - TC
Fig. 10 Safe Operating Area
*
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STK0765BF
Fig. 10 Gate Charge Test Circuit & Waveform
Fig. 11 Resistive Switching Test Circuit & Waveform
Fig. 12 EAS Test Circuit & Waveform
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STK0765BF
Fig. 13 Diode Reverse Recovery Time Test Circuit & Waveform
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STK0765BF
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
KSD-T0O016-001
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