STK7000 [AUK]

N-Channel Enhancement-Mode MOSFET; N沟道增强型MOSFET
STK7000
型号: STK7000
厂家: AUK CORP    AUK CORP
描述:

N-Channel Enhancement-Mode MOSFET
N沟道增强型MOSFET

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STK7000  
Semiconductor  
N-Channel Enhancement-Mode MOSFET  
Description  
· High speed switching application.  
Features  
· High density cell design for low RDS(ON)  
· Voltage controlled small signal switch  
· High saturation current capability.  
.
Ordering Information  
Type NO.  
Marking  
Package Code  
STK7000  
STK7000  
TO-92  
Outline Dimensions  
unit : mm  
3.45±0.1  
2.25±0.1  
4.5±0.1  
0.4±0.02  
2.06±0.1  
1.27 Typ.  
2.54 Typ.  
1 2 3  
PIN Connections  
1. Source  
2. Gate  
3. Drain  
KST-9078-003  
1
STK7000  
Absolute maximum ratings  
Characteristic  
(Ta=25  
°C)  
Symbol  
VDSS  
VGS  
Ratings  
60  
Unit  
Drain-Source voltage  
Gate-Source voltage  
V
V
±20  
Maximum Drain current  
Pulsed Drain Current  
ID  
200  
mA  
mA  
mW  
°C/W  
IDM  
500  
Power dissipation  
PD  
400  
Maximum Junction-to-Ambient  
R
312.5  
thJA  
Operating Junction and  
Storage temperature range  
TJ , Tstg  
-55~150  
°C  
Electrical Characteristics  
Characteristic  
(Ta=25  
°C)  
Symbol  
BVDSS  
VGS(th)  
IDSS  
Test Condition  
Min. Typ. Max. Unit  
Drian-Source breakdown voltage  
Gate-Threshold voltage  
ID=10mA, VGS =0  
60  
-
2.1  
-
-
3.0  
1
V
V
ID=1mA, VDS=VGS  
VDS =48V, VGS =0  
0.8  
Zero Gate voltage drain current  
Gate-body leakage  
-
mA  
nA  
mA  
W
IGSS  
VDS =0V, VGS =±15V  
VDS =10V, VGS =4.5V  
VGS =4.5V, ID=0.075A  
VGS =10V, ID=0.5A  
-
-
±100  
-
On-state drain current *  
Drain-Source on-resistance *  
ID(on)  
75  
350  
4.5  
2.4  
4.4  
-
RDS(ON)  
-
5.3  
5.0  
9.0  
-
-
W
Drain-Source on-resistance *  
RDS(ON)  
TJ=125  
-
W
Forward transconductance *  
Input capacitance  
gfs  
VDS =10V, ID=0.2A  
100  
mS  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
VDS =25V, VGS =0, f=1MHz  
VDS =25V, VGS =0, f=1MHz  
VDS =25V, VGS =0, f=1MHz  
-
-
-
22  
11  
2
60  
25  
5
Output capacitance  
Reverse Transfer capacitance  
VDD=15V, ID=0.5A  
VGEN=10V, RG=25W  
VDD=15V, ID=0.5A  
VGEN=10V, RG=25W  
Turn-on time  
Turn-off time  
tON  
-
-
-
-
10  
10  
ns  
ns  
tOFF  
*. Pulse test : Pulse width300us, Duty cycle2.0%  
KST-9078-003  
2
STK7000  
Electrical Characteristic Curves  
Fig. 1 I - VDS  
D
Fig. 2 I - VGS  
D
Fig. 4 C - VD S  
Fig. 3 RDS(on) - ID  
Fig. 6 RDS(on) - TJ  
Fig. 5 VGS - Qg  
KST-9078-003  
3
STK7000  
Fig. 7 RDS(on) - VGS  
Fig. 8 I - VSD  
S
Fig. 9 VGS(th) - TJ  
m
KST-9078-003  
4

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