STK730P [AUK]
Power MOSFET; 功率MOSFET
AUK CORP 
STK730P
Semiconductor
Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
• High Voltage: BVDSS=400V(Min.)
• Low Crss : Crss=8.4pF(Typ.)
• Low gate charge : Qg=16nC(Typ.)
• Low RDS(on) :RDS(on)=1.0Ω(Max.)
Ordering Information
Type NO.
Marking
Package Code
STK730P
STK730
TO-220AB-3L
Outline Dimensions
unit : mm
Φ3.90 Max.
1.17~1.37
9.80~10.20
1.17 Min.
0.88 Max.
0.43 Max.
2.54 Typ.
2.54 Typ.
1
2
3
PIN Connections
1. Gate
2. Drain
3. Source
KSD-T0P008-000
1
STK730P
Absolute maximum ratings
Characteristic
(Tc=25°C)
Symbol
VDSS
Rating
400
±30
5.5
Unit
V
Drain-source voltage
Gate-source voltage
VGSS
V
Tc=25℃
A
Drain current (DC)
ID
Tc=100℃
3.4
A
*
Drain current (Pulsed)
IDP
PD
22
A
Drain power dissipation
71
W
A
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
②
②
①
IAS
EAS
IAR
5.5
270
5.5
mJ
A
Repetitive avalanche energy
①
EAR
7.3
mJ
Junction temperature
Storage temperature range
TJ
Tstg
150
-55~150
°C
°C
* Limited by maximum junction temperature
Characteristic
Symbol
Typ.
Max
1.75
62.5
Unit
Junction-case
Rth(J-C)
Rth(J-A)
-
-
Thermal
resistance
℃/W
Junction-ambient
KSD-T0P008-000
2
STK730P
Electrical Characteristics
Characteristic
(Tc=25°C)
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Test Condition
ID=250 ㎂, VGS=0
ID=250 ㎂, VGS=5V
VDS=400V, VGS=0
VDS=0V, VGS=±30V
VGS=10V, ID=2.75A
VDS=10V, ID=2.75A
Min. Typ. Max. Unit
Drain-source breakdown voltage
400
-
-
4.0
10
±100
1
V
Gate threshold voltage
2.0
-
-
V
Drain-source cut-off current
Gate leakage current
-
μA
nA
Ω
-
-
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
④
-
0.8
3.6
550
46
8.4
13
65
21
38
16
2.5
6.6
④
-
-
S
Ciss
-
825
70
13
-
VGS=0V, VDS=25V
f=1 MHz
pF
ns
nC
Coss
-
Crss
-
td(on)
tr
td(off)
tf
-
VDD=200V, ID=5.5A
RG=12Ω
-
-
Turn-off delay time
Fall time
-
-
③④
③④
-
-
Total gate charge
Qg
-
24
3.8
10
VDS=200V, VGS=10V
ID=5.5A
Gate-source charge
Gate-drain charge
Qgs
-
Qgd
-
Source-Drain Diode Ratings and Characteristics
(Tc=25°C)
Min Typ Max Unit
Characteristic
Symbol
Test Condition
Source current (DC)
IS
ISP
VSD
trr
-
-
-
-
-
-
5.5
22
1.5
-
Integral reverse diode
in the MOSFET
A
Source current (Pulsed)
Forward voltage
①
④
-
VGS=0V, IS=5.5A
-
V
Reverse recovery time
Reverse recovery charge
270
2.16
ns
uC
Is=5.5A, VGS=0V
dIs/dt=100A/㎲
Qrr
-
Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature
② L=13.7mH, IAS=5.5A, VDD=50V, RG=27Ω
③ Pulse Test : Pulse Width≤400 ㎲, Duty cycle≤2%
④ Essentially independent of operating temperature
KSD-T0P008-000
3
STK730P
Electrical Characteristic Curves
Fig. 1 ID - VDS
Fig. 2 ID - VGS
1
Fig. 3 RDS(on) - ID
Fig. 4 IS - VSD
Fig. 6 VGS - QG
Fig. 5 Capacitance - VDS
℃
KSD-T0P008-000
4
STK730P
Fig. 7 VDSS - TJ
Fig. 8 RDS(on) - TJ
㎂
C
C
Fig. 10 Safe Operating Area
Fig. 9 ID - TC
*
KSD-T0P008-000
5
STK730P
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T0P008-000
6
STK730P
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
rr
KSD-T0P008-000
7
STK730P
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
KSD-T0P008-000
8
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