STN3904 [AUK]
NPN Silicon Transistor; NPN硅晶体管
| 型号： | STN3904 |
| 厂家： | 
AUK CORP |
| 描述： | NPN Silicon Transistor |
| 文件： | 总3页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STN3904
Semiconductor
NPN Silicon Transistor
Descriptions
• General small signal amplifier
• Switching application
Features
• Low collector saturation voltage
• Collector output capacitance
• Complementary pair with STN3906
Ordering Information
Type NO.
Marking
Package Code
TO-92
STN3904
STN3904
Outline Dimensions
unit : mm
3.45±0.1
2.25±0.1
4.5±0.1
0.4±0.02
2.06±0.1
1.27 Typ.
2.54 Typ.
1 2 3
PIN Connections
1. Emitter
2. Base
3. Collector
KST-9030-000
1
STN3904
Absolute maximum ratings
Characteristic
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
Ratings
60
Unit
V
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
40
V
6
V
100
mA
mW
°C
Collector dissipation
Junction temperature
Storage temperature
PC
625
Tj
150
Tstg
-55~150
°C
Electrical Characteristics
Characteristic
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Test Condition
Min. Typ. Max. Unit
IC=10µA, IE=0
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
60
40
6
-
-
-
-
-
-
-
-
-
-
V
V
IC=1mA, IB=0
IE=10µA, IC=0
-
V
VCB=60V, IE=0
-
0.1
300
0.4
-
µA
-
DC current gain
hFE
VCE=1V, IC=10mA
IC=50mA, IB=5mA
VCE=20V, IC=10mA
VCE=5V, IE=0, f=1MHz
100
-
Collector-Emitter saturation voltage
Transition frequency
VCE(sat)
fT
V
300
-
MHz
pF
Collector output capacitance
Cob
4
KST-9030-000
2
STN3904
Electrical Characteristic Curves
Fig. 2 IC -VBE
Fig. 1 PC-Ta
Fig. 4 hFE -IC
Fig. 3 IC -VCE
Fig. 5 VCE(sat) -IC
KST-9030-000
3
相关型号：
STN3N45K3
N-channel 450 V, 3.2 Ω, 1.8 A, TO-92, SOT-223, IPAK SuperMESH3⢠Power MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明