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STN3NF06 [STMICROELECTRONICS]

N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II POWER MOSFET; N沟道60V - 0.07ohm - 4A SOT- 223 STripFET⑩ II功率MOSFET
STN3NF06
元器件型号： STN3NF06
生产厂家： STMICROELECTRONICS    STMICROELECTRONICS
描述和应用：

N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II POWER MOSFET
N沟道60V - 0.07ohm - 4A SOT- 223 STripFET⑩ II功率MOSFET

晶体 小信号场效应晶体管 开关 光电二极管
PDF文件： 总8页 (文件大小：286K)
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型号参数：STN3NF06参数
 查看货源

STN3NF06L

 N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II POWER MOSFET

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175 STMICROELECTR

STN3NF06L

 N-channel 60 V, 0.07 ヘ, 4 A, SOT-223 STripFET⑩ II Power MOSFET

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102 STMICROELECTR

STN3NF06L_08

 N-channel 60 V, 0.07 ヘ, 4 A, SOT-223 STripFET⑩ II Power MOSFET

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26 STMICROELECTR

STN3P6F6

 P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT-223 package

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75 STMICROELECTR

STN3PF06

 P-channel 60 V - 0.20 ヘ - 2.5 A - SOT-223 STripFET⑩ II Power MOSFET

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49 STMICROELECTR

STN3PF06

 P-CHANNEL 60V - 0.18ohm - 3A SOT-223 STripFET⑩ II POWER MOSFET

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157 STMICROELECTR

STN3PF06_08

 P-channel 60 V - 0.20 ヘ - 2.5 A - SOT-223 STripFET⑩ II Power MOSFET

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28 STMICROELECTR

STN4346

 STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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28 STANSON

STN4392

 STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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25 STANSON

STN4402_V1

 N Channel Enhancement Mode MOSFET

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156 ETC

STN4412

 N Channel Enhancement Mode MOSFET

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144 STANSON

STN4412S8RG

 N Channel Enhancement Mode MOSFET

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39 STANSON

STN4412S8TG

 N Channel Enhancement Mode MOSFET

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17 STANSON

STN4416

 STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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20 STANSON

STN4426

 STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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59 STANSON
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