AS8S512K32Q-15/XT [AUSTIN]
512K x 32 SRAM SRAM MEMORY ARRAY; 512K ×32的SRAM SRAM存储器阵列
| 型号： | AS8S512K32Q-15/XT |
| 厂家： | 
AUSTIN SEMICONDUCTOR |
| 描述： | 512K x 32 SRAM SRAM MEMORY ARRAY |
| 文件： | 总14页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SRAM
AS8S512K32
& AS8S512K32A
Austin Semiconductor, Inc.
512K x 32 SRAM
PIN ASSIGNMENT
SRAM MEMORY ARRAY
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
68 Lead CQFP (Q, Q1 & Q2)
Military SMD Pinout Option
•
•
SMD 5962-94611 (Military Pinout)
MIL-STD-883
1 0
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
2 0
2 1
2 2
2 3
2 4
2 5
2 6
6 0
5 9
5 8
5 7
5 6
5 5
5 4
5 3
5 2
5 1
5 0
4 9
4 8
4 7
4 6
4 5
4 4
I/O 16
I/O 17
I/O 18
I/O 19
I/O 20
I/O 21
I/O 22
I/O 23
GND
I/O 24
I/O 25
I/O 26
I/O 27
I/O 28
I/O 29
I/O 30
I/O 31
I/O 0
I/O 1
I/O 2
I/O 3
FEATURES
•
•
•
•
•
•
•
Operation with single 5V supply
I/O 4
I/O 5
I/O 6
I/O 7
GND
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
High speed: 12, 15, 17, 20, 25 and 35ns
Built in decoupling caps for low noise
Organized as 512Kx32 , byte selectable
Low power CMOS
TTL Compatible Inputs and Outputs
Future offerings
3.3V Power Supply
OPTIONS
MARKINGS
• Operating Temperature Ranges
Military (-55oC to +125oC)
Industrial (-40oC to +85oC)
XT
IT
68 Lead CQFP
Commercial Pinout Option (Q & Q1 with A)
• Timing
12ns
15ns
17ns
20ns
25ns
35ns
45ns
55ns
-12
-15
-17
-20
-25
-35
-45
-55
1 0
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
2 0
2 1
2 2
2 3
2 4
2 5
2 6
6 0
5 9
5 8
5 7
5 6
5 5
5 4
5 3
5 2
5 1
5 0
4 9
4 8
4 7
4 6
4 5
4 4
I/O 14
I/O 13
I/O 12
Vss
I/O 11
I/O 10
I/O 9
I/O 8
Vcc
I/O 7
I/O 6
I/O 5
I/O 4
Vss
I/O 3
I/O 2
I/O 1
I/O17
I/O18
I/O19
Vss
I/O20
I/O21
I/O22
I/O23
Vcc
I/O24
I/O25
I/O26
I/O27
Vss
I/O28
I/O29
I/O30
• Package
Ceramic Quad Flatpack
Ceramic Quad Flatpack
Ceramic Quad Flatpack
Pin Grid Array
Q
Q1
Q2
P
66 Lead PGA (P)
•
•
Low Power Data Retention Mode
L
Military SMD Pinout
Pinout
Military
Commercial
(no indicator)
A*
CS
CS
*(available with Q package only)
\
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS8S512K32 and
AS8S512K32A are 16 Megabit CMOS SRAM Modules organized as
512Kx32 bits. These devices achieve high speed access, low power
consumption and high reliability by employing advanced CMOS
memory technology.
CS
CS
This military temperature grade product is ideally suited for
military and space applications.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
1
SRAM
AS8S512K32
& AS8S512K32A
Austin Semiconductor, Inc.
CS
CS
CS
CS
C
CS4\
M3
CS3\
I/O 24 - I/O 31
M2
CS2\
I/O 16 - I/O 23
M1
I/O 8 - I/O 15
CS1\
M0
WE\
OE\
A0 - A18
I/O 0 - I/O 7
COMMERCIAL PINOUT/BLOCK DIAGRAM
MILITARY PINOUT/BLOCK DIAGRAM
TRUTH TABLE
OE\
L
\ WE\
CS
I/O
DOUT
DIN
MODE
Read
POWER
ACTIVE
L
H
X
X
L
L
ACTIVE
Write(2)
Standby
H
X
STANDBY
High Z
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
2
SRAM
AS8S512K32
& AS8S512K32A
Austin Semiconductor, Inc.
This is a stress rating only and functional operation on the
device at these or any other conditions above those indicated
in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
**Junction temperature depends upon package type, cycle time,
loading, ambient temperature and airflow. See theApplication
Information section at the end of this datasheet for more infor-
mation.
ABSOLUTE MAXIMUM RATINGS*
Voltage of Vcc Supply Relative to Vss......................-.5V to +7V
Storage Temperature............................................-65°C to +150°C
Short Circuit Output Current(per I/O).................................20mA
Voltage onAny Pin Relative to Vss....................-.5V to Vcc+1V
Maximum JunctionTemperature**...................................+150°C
*Stresses greater than those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TA < 125oC and -40oC to +85oC;Vcc = 5V +10%)
DESCRIPTION
CONDITIONS SYMBOL MIN
MAX UNITS NOTES
VIH
VIL
ILI1
ILI2
VCC+.5
Input High (logic 1) Voltage
Input Low (logic 1) Voltage
Input Leakage Current ADD,OE
Input Leakage Current WE, CE
2.2
-0.5
-10
-10
V
1
0.8
V
µA
µA
1,2
10
0V<VIN<VCC
10
Output(s) Disabled
0V<VOUT<VCC
Output Leakage Current I/O
ILO
-10
2.4
10
µA
IOH = 4.0mA
IOL = 8.0mA
VOH
VOL
VCC
Output High Voltage
Output Low Voltage
Supply Voltage
V
V
V
1
1
1
0.4
5.5
4.5
MAX
DESCRIPTION
CONDITIONS
SYMBOL -12 -15 -17 -20 -25 -35 -45 -55 UNITS NOTES
CS\<VIL; VCC = MAX
f = MAX = 1/ tRC (MIN)
Outputs Open
Power Supply
Current: Operating
Icc
250 200 700 650 600 570 570 550 mA
3,13
CS\>VIH; VCC = MAX
f = MAX = 1/ tRC (MIN)
Outputs Open
Power Supply
Current: Standby
ISBT1
80
80
80 240 240 190 190 150 150 mA
3, 13
VIN = VCC - 0.2V, or
VSS +0.2V
ISBT2
CMOS Standby
80
80
80
80
80
80
80
mA
VCC=Max; f = 0Hz
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
3
SRAM
AS8S512K32
& AS8S512K32A
Austin Semiconductor, Inc.
CAPACITANCE (VIN = 0V, f = 1MHz, TA = 25oC)1
SYMBOL
PARAMETER
A0 - A18 Capacitance
MAX
UNITS
CADD
COE
50
pF
OE\ Capacitance
50
20
20
50
pF
pF
pF
pF
CWE, CCS
WE\ and CS\ Capacitance
I/O 0- I/O 31 Capacitance
WE\ Capacitance
CIO
CWE ("A" version)
NOTE:
1. This parameter is sampled.
AC TEST CONDITIONS
Test Specifications
Input pulse levels.........................................VSS to 3V
Input rise and fall times.........................................5ns
Input timing reference levels...............................1.5V
Output reference levels........................................1.5V
Output load..............................................See Figure 1
I
OL
Current Source
Device
Under
Test
-
+
Vz = 1.5V
(Bipolar
Supply)
+
Ceff = 50pf
I
Current Source
OH
NOTES:
Figure 1
Vz is programmable from -2V to + 7V.
IOL and IOH programmable from 0 to 16 mA.
Vz is typically the midpoint of VOH and VOL.
IOL and IOH are adjusted to simulate a typical resistive load
circuit.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
4
SRAM
AS8S512K32
& AS8S512K32A
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(NOTE 5) (-55oC<TA < 125oC and -40oC to +85oC;VCC = 5V +10%)
-12
-15
-17
-20
-25
-35
-45
-55
DESCRIPTION
READ CYCLE
SYMBOL
UNITS NOTES
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
tRC
tAA
tACS
tOH
tLZCS
tHZCS
tAOE
tLZOE
tHZOE
12
15
READ cycle time
17
20
25
35
45
55
ns
ns
ns
ns
12
12
15
15
Address access time
17
17
20
20
25
25
35
35
45
45
55
55
Chip select access time
Output hold from address change
Chip select to output in Low-Z
Chip select to output in High-Z
Output enable access time
Output enable to output in Low-Z
Output disable to output in High-Z
WRITE CYCLE
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
ns
ns
ns
ns
ns
4,6,7
4,6,7
7
7
8
8
9
9
10
10
12
12
15
15
20
20
20
20
0
0
0
0
0
0
0
0
4,6
4,6
12
12
12
15
20
20
tWC
tCW
WRITE cycle time
12
10
10
2
15
12
12
2
17
15
15
2
20
15
15
2
25
17
17
2
35
20
20
2
45
25
25
2
55
25
25
2
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip select to end of write
Address valid to end of write
Address setup time
tAW
tAS
tAH
Address hold from end of write
WRITE pulse width
1
1
1
1
1
1
1
1
tWP1
tWP2
tDS
10
10
8
12
12
10
0
15
15
12
0
15
15
10
0
17
17
12
0
20
20
15
0
25
25
20
0
25
25
20
0
WRITE pulse width
Data setup time
tDH
tLZWE
tHZWE
Data hold time
0
Write disable to output in Low-z
Write enable to output in High-Z
2
2
2
2
2
2
2
2
4,6,7
4,6,7
7
8
9
11
13
15
15
15
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
5
SRAM
AS8S512K32
& AS8S512K32A
Austin Semiconductor, Inc.
READ CYCLE NO. 1
t
RC
ADDRESS
t
AA
t
OH
PREVIOUS DATA VALID
DATA VALID
DATA I/O
READ CYCLE NO. 2
t
RC
ADDRESS
t
AA
CS\
t
ACS
t
t
HZCS
LZCS
OE\
t
t
HZOE
AOE
LZOE
t
DATA VALID
DATAI/O
HIGHIMPEDANCE
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
6
SRAM
AS8S512K32
& AS8S512K32A
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1
(Chip Select Controlled)
t
WC
ADDRESS
t
t
AW
t
AH
CW
CS\
t
t
AS
WP11
WE\
t
LZWE
t
t
t
HZWE
DS
DATA VALID
DH
DATAI/O
WRITE CYCLE NO. 2
(Write Enable Controlled)
t
WC
ADDRESS
t
AW
t
t
t
AS
AH
CW
CS\
t
WP21
WE\
t
t
DH
DS
DATA VALID
DATAI/O
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
7
SRAM
AS8S512K32
& AS8S512K32A
Austin Semiconductor, Inc.
NOTES
1. All voltages referenced to VSS (GND).
2. -2V for pulse width <20ns.
7. At any given temperature and voltage condition,
tHZCS, is less than tLZCS, and tHZWE is less than tLZWE
.
3. ICC is dependent on output loading and cycle rates.
8. WE\ is HIGH for READ cycle.
9. Device is continuously selected. Chip selects and output
enable are held in their active state.
10. Address valid prior to or coincident with latest occurring
chip enable.
11. tRC= READ cycle time.
12. Chip enable (CS\) and write enable (WE\) can initiate and
terminate a WRITE cycle.
1
HZ.
unloaded, and f=
t
RC(MIN)
The specified value applies with the outputs
4. This parameter guaranteed but not tested.
5. Test conditions as specified with output loading as
shown in Fig. 1 unless otherwise noted.
6. tHZCS, tHZOE and tHZWE are specified with CL= 5pF as in Fig. 2.
Transition is measured +/- 200 mV typical from steady state
voltage, allowing for actual tester RC time constant.
13. ICC is for 32 bit mode.
LOW POWER CHARACTERISTICS (L Version Only)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
VCC for Retention Data
VDR
2
V
All Inputs @ Vcc + 0.2V
or Vss + 0.2V,
VCC = 2V
CC = 3V
ICCDR
ICCDR
20
mA
mA
Data Retention Current
V
28*
CS\ = Vcc + 0.2V
Chip Deselect to Data
Retention Time
0
ns
ns
4
t
CDR
Operation Recovery Time
4, 11
t
t
RC
R
* -12 and -15 have a 32mA limit.
LOW VCC DATA RETENTION WAVEFORM
DATA RETENTION MODE
VCC
4.5V
4.5V
VDR>2V
tCDR
R
t
VDR
CS\ 1-4
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
8
SRAM
AS8S512K32
& AS8S512K32A
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #702 (Package Designator Q)
SMD 5962-94611, Case Outline M
4 x D2
DETAILA
4 x D1
D
R
1o - 7o
B
b
e
L1
SEE DETAIL A
A1
A
A2
E
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
A
A1
A2
B
b
D
0.123
0.118
0.000
0.200
0.186
0.020
0.010 REF
0.800 BSC
0.013
0.017
D1
D2
E
0.870
0.980
0.936
0.890
1.000
0.956
e
0.050 BSC
R
L1
0.005
0.035
---
0.045
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
9
SRAM
AS8S512K32
& AS8S512K32A
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Package Designator Q2
D2
D1
D
1
b
D3
e
ASI PACKAGE SPECIFICATION
A
Symbol
A
Max
.200
.080
.017
Min
A1
b
.070
.013
R
.010 REF
.800 BSC
B
D
D1
D2
.870
1.010
.890
1.030
L1
.975
D3
e
R
L1
.995
A1
.050 BSC
.010 TYP
.050
B
.065
Dimensions in inches
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
10
SRAM
AS8S512K32
& AS8S512K32A
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #904 (Package Designator P )
SMD 5962-94611, Case Outline T
4 x D
A
D1
D2
A1
Pin 56
Pin 1
(identified by
0.060 square pad)
φb1
E1
e
φb
Pin 66
Pin 11
e
L
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
0.181
0.035
0.020
0.055
1.085
A
A1
φb
φb1
D
0.144
0.025
0.016
0.045
1.065
D1/E1
D2
e
1.000 TYP
0.600 TYP
0.100 TYP
L
0.145
0.155
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
11
SRAM
AS8S512K32
& AS8S512K32A
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case (Package Designator Q1)
SMD 5962-94611, Case Outline A
SMD SPECIFICATIONS
SYMBOL
MIN
---
0.054
0.013
MAX
0.200
---
A
A1
b
0.017
0.010 TYP
B
c
0.009
0.980
0.870
0.012
1.000
0.890
D/E
D1/E1
D2/E2
e
0.800 BSC
0.050 BSC
L
0.035
0.045
0.010 TYP
R
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
12
SRAM
AS8S512K32
& AS8S512K32A
Austin Semiconductor, Inc.
ORDERING INFORMATION
EXAMPLE: AS8S512K32Q-15/883C
EXAMPLE: AS8S512K32Q1-55/IT
Package Speed
Device Number
Device
Package
Type
Q1
Options** Process
Options**
Speed ns Process
Type
Q
ns
-12
-15
-17
-20
-25
-35
-45
-55
Number
AS8S512K32
AS8S512K32
AS8S512K32
AS8S512K32
AS8S512K32
AS8S512K32
AS8S512K32
AS8S512K32
/*
/*
/*
/*
/*
/*
/*
/*
AS8S512K32
AS8S512K32
AS8S512K32
AS8S512K32
AS8S512K32
AS8S512K32
AS8S512K32
AS8S512K32
-12
-15
-17
-20
-25
-35
-45
-55
/*
/*
/*
/*
/*
/*
/*
/*
Q
Q1
Q
Q1
Q
Q1
Q
Q1
Q
Q1
Q
Q1
Q
Q1
EXAMPLE: AS8S512K32P-25L/XT
EXAMPLE: AS8S512K32Q2-35L/XT
Package Speed
Device Number
Device
Package
Type
Q2
Options** Process
Options**
Speed ns Process
Type
ns
-12
-15
-17
Number
AS8S512K32
AS8S512K32
AS8S512K32
P
P
P
/*
/*
/*
AS8S512K32
AS8S512K32
AS8S512K32
-12
-15
-17
/*
/*
/*
Q2
Q2
AS8S512K32
P
-20
/*
AS8S512K32
Q2
-20
/*
AS8S512K32
AS8S512K32
AS8S512K32
AS8S512K32
P
P
P
P
-25
-35
-45
-55
/*
/*
/*
/*
AS8S512K32
AS8S512K32
AS8S512K32
AS8S512K32
Q2
Q2
Q2
Q2
-25
-35
-45
-55
/*
/*
/*
/*
*AVAILABLE PROCESSES
IT = IndustrialTemperature Range
XT = Extended Temperature Range
Q = Full Military Processing
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
SPACE= Class K Equivalent
**DEFINITION OF OPTIONS
no indicator = Military Pinout
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
13
SRAM
AS8S512K32
& AS8S512K32A
Austin Semiconductor, Inc.
ASI TO DSCC PART NUMBER
CROSS REFERENCE
Package Designator Q
Package Designator P
ASI Part #
AS8S512K32Q-12/Q
AS8S512K32Q-15/Q
AS8S512K32Q-17/Q
AS8S512K32Q-20/Q
AS8S512K32Q-25/Q
AS8S512K32Q-35/Q
AS8S512K32Q-45/Q
AS8S512K32Q-55/Q
SMD Part #
5962-9461120HMX
5962-9461119HMX
5962-9461110HMX
5962-9461109HMX
5962-9461108HMX
5962-9461107HMX
5962-9461106HMX
5962-9461105HMX
ASI Part #
AS8S512K32P-12/Q
AS8S512K32Q-15/Q
AS8S512K32P-17/Q
AS8S512K32P-20/Q
AS8S512K32P-25/Q
AS8S512K32P-35/Q
AS8S512K32P-45/Q
AS8S512K32P-55/Q
SMD Part #
5962-9461120HTA
5962-9461119HTA
5962-9461110HTA
5962-9461109HTA
5962-9461108HTA
5962-9461107HTA
5962-9461106HTX
5962-9461105HTX
AS8S512K32Q-12/Q
AS8S512K32Q-15/Q
AS8S512K32Q-17/Q
AS8S512K32Q-20/Q
AS8S512K32Q-25/Q
AS8S512K32Q-35/Q
AS8S512K32Q-45/Q
AS8S512K32Q-55/Q
5962-9461118HMX
5962-9461117HMX
5962-9461116HMX
5962-9461115HMX
5962-9461114HMX
5962-9461113HMX
5962-9461112HMX
5962-9461111HMX
AS8S512K32Q-15/Q
AS8S512K32P-12/Q
AS8S512K32P-17/Q
AS8S512K32P-20/Q
AS8S512K32P-25/Q
AS8S512K32P-35/Q
AS8S512K32P-45/Q
AS8S512K32P-55/Q
5962-9461117HTA
5962-9461118HTA
5962-9461116HTA
5962-9461115HTA
5962-9461114HTA
5962-9461113HTA
5962-9461112HTA
5962-9461111HTA
Package Designator Q1
ASI Part #
AS8S512K32Q1-12/Q
AS8S512K32Q1-15/Q
AS8S512K32Q1-17/Q
AS8S512K32Q1-20/Q
AS8S512K32Q1-25/Q
AS8S512K32Q1-35/Q
AS8S512K32Q1-45/Q
AS8S512K32Q1-55/Q
SMD Part #
5962-9461120HAX
5962-9461119HAX
5962-9461110HAX
5962-9461109HAX
5962-9461108HAX
5962-9461107HAX
5962-9461106HAX
5962-9461105HAX
AS8S512K32Q1-12/Q
AS8S512K32Q1-15/Q
AS8S512K32Q1-17/Q
AS8S512K32Q1-20/Q
AS8S512K32Q1-25/Q
AS8S512K32Q1-35/Q
AS8S512K32Q1-45/Q
AS8S512K32Q1-55/Q
5962-9461118HAX
5962-9461117HAX
5962-9461116HAX
5962-9461115HAX
5962-9461114HAX
5962-9461113HAX
5962-9461112HAX
5962-9461111HAX
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
14
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