MT5C2568ECW-70/883C [AUSTIN]
32K x 8 SRAM SRAM MEMORY ARRAY; 32K ×8 SRAM SRAM存储器阵列型号: | MT5C2568ECW-70/883C |
厂家: | AUSTIN SEMICONDUCTOR |
描述: | 32K x 8 SRAM SRAM MEMORY ARRAY |
文件: | 总16页 (文件大小:141K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
32K x 8 SRAM
SRAM MEMORY ARRAY
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
28-PIN SOJ (DCJ)
28-Pin DIP (C, CW)
32-Pin LCC (ECW)
SPECIFICATIONS
•SMD5962-88662
•SMD5962-88552
•MIL-STD-883
VCC
A14
A12
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
28
4
3 2 1 32 31 30
27 WE\
26 A13
25 A8
5
6
7
8
9
10
11
12
13
A6
A5
A4
A3
A2
A1
A0
NC
DQ1
29
28
27
26
25
24
23
22
21
A8
A9
A11
NC
OE\
A10
CE\
DQ8
DQ7
24 A9
23 A11
22 OE\
21 A10
20 CE\
19 DQ8
18 DQ7
17 DQ6
16 DQ5
15 DQ4
FEATURES
• Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns
• Battery Backup: 2V data retention
• Low power standby
• High-performance, low-power CMOS double-metal process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
A0 10
DQ1 11
DQ2 12
DQ3 13
14 15 16 17 18 19 20
VSS
14
28-Pin LCC (EC)
3
2 1 28 27
28-Pin Flat Pack (F)
OPTIONS
• Timing
MARKING
4
5
6
7
8
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
26
25
24
23
22
21
20
19
18
A13
A8
A9
A11
OE\
A10
CE\
DQ8
DQ7
12ns access1
15ns access1
20ns access
25ns access
35ns access
45ns access
55ns access2
70ns access2
100ns access
-12
-15
-20
-25
-35
-45
-55
-70
-100
VCC
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0 10
DQ1 11
DQ2 12
DQ3 13
1
2
3
4
5
6
7
8
9
28
27 WE\
26 A13
25 A8
24 A9
9
23 A11
22 OE\
21 A10
20 CE\
19 DQ8
18 DQ7
17 DQ6
16 DQ5
15 DQ4
10
11
12
13 14 15 16 17
VSS
14
• Package(s)3
Ceramic DIP (300 mil)
Ceramic DIP (600 mil)
Ceramic LCC (28 leads)
Ceramic LCC (32 leads)
Ceramic Flat Pack
Ceramic SOJ
C
No. 108
GENERAL DESCRIPTION
CW
EC
ECW
F
No. 110
No. 204
No. 208
No. 302
No. 500
The Austin Semiconductor SRAM family employs
high-speed, low power CMOS designs using a four-transistor
memory cell. These SRAMs are fabricated using double-layer
metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Austin Semiconductor offers chip enable (CE\) and output
enable (OE\) capability. These enhancements can place the
outputs in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is
accomplished when WE\ remains HIGH and CE\ and OE\ go
LOW. The device offers a reduced power standby mode when
disabled. This allows system designs to achieve low standby
power requirements.
DCJ
• Operating Temperature Ranges
Military -55oC to +125oC
Industrial -40oC to +85oC
XT
IT
• 2V data retention/low power
L
NOTES:
1. -12 available in IT only.
2. Electrical characteristics identical to those provided for the
45ns access devices.
3. Plastic SOJ (DJ Package) is available on the AS5C2568 datasheet.
The “L” version provides a battery backup/low
voltage data retention mode, offering 2mW maximum power
dissipation at 2 volts. All devices operate from a single +5V
power supply and all inputs and outputs are fully TTL
compatible.
For more products and information
please visit our web site at
www.austinsemiconductor.com
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
1
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
A0
Vcc
256 x 1024
GND
DECODER
MEMORY ARRAY
A14
I/O0
I/O
COLUMN I/O
DATA
CIRCUIT
I/O7
9A128-1
CE\
OE\
WE\
CONTROL
CIRCUIT
TRUTHTABLE
MODE
STANDBY
READ
READ
WRITE
OE\
X
L
H
X
CE\
H
L
L
L
WE\
DQ
POWER
X
H
H
L
HIGH-Z STANDBY
Q
HIGH-Z
D
ACTIVE
ACTIVE
ACTIVE
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
2
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Input or DQ Relative
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
to Vss..................................................................-0.5V to Vcc +0.5V
Voltage on Vcc Supply Relative to Vss.......................-1V to +7V
StorageTemperature..............................................-65oC to +150oC
Power Dissipation.......................................................................1W
Short Circuit Output Current.................................................50mA
Lead Temperature (soldering 10 seconds)........................+260oC
Max. Junction Temperature.................................................+175oC
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC or -40oC to +85oC;VCC = 5.0V +10%)
DESCRIPTION
CONDITIONS
SYM MIN
MAX UNITS NOTES
Input High (Logic 1) Voltage
2.2
-0.5
-10
V
V
1
VIH
VIL
ILI
V
CC+0.5
Input Low (Logic 0) Voltage
Input Leakage Current
0.8
1,2
10
µA
0V<VIN<VCC
Output(s) disabled
0V<VOUT<VCC
Output Leakage Current
ILo -10
10
µA
Output High Voltage
Output Low Voltage
2.4
V
V
1
1
I
OH = -4.0mA
VOH
VOL
0.4
IOL = 8.0mA
MAX
DESCRIPTION
CONDITIONS
SYM -12 -15 -20 -25 -35 -45 UNITS NOTES
CE\<VIL; Vcc = MAX
Power Supply
Current: Operating
f = MAX = 1/ tRC (MIN)
Output Open
Icc
190 180 170 160 150 150
60 50 40 35 35 35
20 20 20 20 20 20
mA
mA
3
CE\<VIH; Outputs Open
Vcc = MAX
TTL
ISBT
Power Supply
Current: Standby
CE\>Vcc-0.2V; Vcc = MAX
VIN<+0.2V or >Vcc-0.2V;
f = 0 Hz, Outputs Open
ISBC
mA
mA
CMOS
"L" Version Only
4
4
4
4
4
4
ISBC2
CAPACITANCE
PARAMETER
CONDITIONS
SYM
MAX
UNITS
NOTES
TA = 25oC, f = 1MHz
Vcc = 5V
Input Capacitance
CIN
CIO
11
pF
4
Output Capacitance
11
pF
4
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
3
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC or -40oC to +85oC;VCC = 5.0V +10%)
-12
-15
-20
-25
-35
-45
DESCRIPTION
READ CYCLE
SYM
UNITS NOTES
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
READ cycle time
12
15
20
25
35
45
ns
ns
ns
ns
tRC
tAA
tACE
tOH
Address access time
12
12
15
15
20
20
25
25
35
35
45
45
Chip enable access time
Output hold from address change
Chip enable to output in Low-Z
Chip disable to output in High-Z
Output enable to access time
Output enable to output in Low-Z
2
2
3
3
3
3
3
3
3
3
3
3
ns
ns
ns
ns
ns
7
tLZCE
tHZCE
tAOE
tLZOE
tHZOE
7
6
10
8
10
10
15
15
35
20
20
20
6, 7
0
0
0
0
2
0
Output disable to output in High-Z
WRITE CYCLE
7
10
10
15
35
20
6
WRITE cycle time
12
10
10
0
15
12
12
0
20
15
15
0
25
20
20
0
35
30
30
0
45
40
40
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tWC
tCW
tAW
Chip enable to end of write
Address valid to end of write
Address setup time
tAS
Address hold from end of write
WRITE pulse width
2
0
0
0
0
0
tAH
10
8
12
10
0
15
10
0
20
15
0
30
20
0
40
20
3
tWP
Data setup time
tDS
Data hold time
0
tDH
Write disable to output in Low-Z
Write enable to output in High-Z
0
0
0
3
3
3
7
tLZWE
tHZWE
7
10
10
15
35
20
6, 7
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
4
SRAM
MT5C2568
AS5C2568
+5V
Austin Semiconductor, Inc.
+5V
ACTEST CONDITIONS
Input pulse levels....................................................Vss to 3V
Input rise and fall times.....................................................5ns
Input timing reference level.............................................1.5V
Output reference level......................................................1.5V
Output load.................................................See figures 1 & 2
480
480
Q
Q
30 pF
255
5 pF
255
Fig. 1
Fig. 2
OUTPUT LOAD
EQUIVALENT
OUTPUT LOAD
EQUIVALENT
NOTES
7. At any given temperature and voltage condition, tHZCE
1. All voltages referenced to VSS (GND).
2. -3V for pulse width < 20ns
is less thantLZCE, and HZWE is less than tLZWE.
t
3. ICC is dependent on output loading and cycle rates. The
specified value applies with the outputs unloaded, and
8. WE\ is HIGH for READ cycle.
9. Device is continuously selected. Chip enables and
output enables are held in their active state.
10. Address valid prior to, or coincident with, latest
occurring chip enable.
f =
1
Hz.
tRC (MIN)
4. This parameter is guaranteed but not tested.
5. Test conditions as specified with the output loading as
shown in Fig. 1 unless otherwise noted.
6. t HZCE, tHZOE and tHZWE are specified with CL = 5pF
as in Fig. 2. Transition is measured ±500mV typical from
steady state voltage, allowing for actual tester RC time
constant.
t
11. RC = Read Cycle Time.
12. Chip enable (CE\) and write enable (WE\) can initiate and
terminate a WRITE cycle.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION
CONDITIONS
SYM
MIN
MAX
UNITS
NOTES
2
V
VCC for Retention Data
VDR
CE\ > (VCC-0.2V)
Data Retention Current
ICCDR
1
mA
VIN > (VCC-0.2V)
or < 0.2V
Chip Deselect to Data
Retention Time
tCDR
tR
0
--
ns
ns
4
Operation Recovery Time
4, 11
tRC
LOW Vcc DATA RETENTION WAVEFORM
DATA RETENTION MODE
VCC
4.5V
4.5V
VDR > 2V
t
tCDR
R
VIH
VIL
VDR
CE\
DON’T CARE
UNDEFINED
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
5
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
8, 9
READ CYCLE NO. 1
tRC
VALID
ADDRESS
DQ
tAA
tOH
PREVIOUS DATA VALID
DATA VALID
7, 8, 10, 12
READ CYCLE NO. 2
tRC
CE\
tAOE
tHZOE
tHZCE
tLZOE
OE\
DQ
Icc
tLZCE
tPU
tACE
DATA VALID
tPD
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
6
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
12
WRITE CYCLE NO. 1
(Chip Enabled Controlled)
tWC
ADDRESS
tAW
tAH
tAS
tCW
CE\
tWP1
WE\
tDS
tDH
DATA VAILD
D
Q
HIGH Z
7, 12
WRITE CYCLE NO. 2
(Write Enabled Controlled)
tWC
ADDRESS
tAW
tCW
tAH
CE\
tAS
tWP1
WE\
tDH
D
Q
DATA VALID
HIGH-Z
NOTE: Output enable (OE\) is inactive (HIGH).
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
7
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #108 (Package Designator C)
SMD 5962-88662, Case Outline N
D
S2
A
Q
L
E
e
b
S1
b2
eA
c
SMD SPECIFICATIONS
MIN
SYMBOL
MAX
0.225
0.026
0.065
0.018
1.485
0.310
A
b
b2
c
D
E
---
0.014
0.045
0.008
---
0.240
eA
e
0.300 BSC
0.100 BSC
L
0.125
0.015
0.005
0.005
0.200
0.070
---
Q
S1
S2
---
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #110 (Package Designator CW)
SMD 5962-88662, Case Outline X
D
S2
A
Q
L
E
e
b
S1
b2
eA
c
SMD SPECIFICATIONS
MIN
SYMBOL
MAX
0.232
0.026
0.065
0.018
1.490
0.610
A
b
b2
c
D
E
---
0.014
0.045
0.008
---
0.500
eA
e
0.600 BSC
0.100 BSC
L
0.125
0.015
0.005
0.005
0.200
0.060
---
Q
S1
S2
---
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #204 (Package Designator EC)
SMD 5962-88662, Case Outline U
D1
B2
D2
L1
E3
E
e
E1
E2
D
hx45o
L
B1
D3
A
A1
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
0.120
0.088
0.028
A
A1
B1
B2
D
0.060
0.050
0.022
0.072 REF
0.342
0.358
D1
D2
D3
E
0.200 BSC
0.100 BSC
---
0.540
0.358
0.560
E1
E2
E3
e
0.400 BSC
0.200 BSC
---
0.558
0.050 BSC
0.040 REF
h
L
L1
0.045
0.075
0.055
0.095
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #208 (Package Designator ECW)
SMD 5962-88662, Case Outline Y
D1
B2
D2
L1
E3
E
e
E1
E2
D
hx45o
L
B1
D3
A
A1
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
0.120
0.088
0.028
A
A1
B1
B2
D
0.060
0.050
0.022
0.072 REF
0.442
0.458
D1
D2
D3
E
0.300 BSC
0.150 BSC
---
0.540
0.458
0.560
E1
E2
E3
e
0.400 BSC
0.200 BSC
---
0.558
0.050 BSC
0.040 REF
h
L
L1
0.045
0.075
0.055
0.095
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #302 (Package Designator F)
SMD 5962-88662, Case Outline T
e
b
D
S
Top View
E
L
A
c
Q
E2
E3
SMD SPECIFICATIONS
MIN
SYMBOL
MAX
0.130
0.019
0.009
0.740
0.420
---
A
b
c
D
E
E2
E3
e
0.090
0.015
0.004
---
0.380
0.180
0.030
---
0.050 BSC
L
Q
S
0.250
0.026
0.000
0.370
0.045
0.045
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #500 (Package Designator DCJ)
A
A3
D
e
B1
E1
b
E
A2
ASI SPECIFICATIONS
SYMBOL
MIN
0.116
0.026
---
0.030
0.015
---
MAX
0.166
0.036
0.166
0.040
0.019
0.740
0.420
0.410
A
A2
A3
B1
b
D
E
E1
e
0.380
0.395
0.050 BSC
* All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
13
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
ORDERING INFORMATION
EXAMPLE: MT5C2568CW-25L/XT
EXAMPLE: MT5C2568ECW-15L/IT
Package
Type
Package
Type
Device Number
Speed ns Options** Process
Device Number
Speed ns Options** Process
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
C
CW
C
CW
C
CW
C
CW
C
CW
C
CW
C
CW
C
CW
-12
-12
-15
-15
-20
-20
-25
-25
-35
-35
-45
-45
-55
-55
-70
-70
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
EC
ECW
EC
ECW
EC
ECW
EC
ECW
EC
ECW
EC
ECW
EC
ECW
EC
ECW
-12
-12
-15
-15
-20
-20
-25
-25
-35
-35
-45
-45
-55
-55
-70
-70
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
MT5C2568
CW
-100
L
/*
MT5C2568
ECW
-100
L
/*
EXAMPLE: MT5C2568F-55/XT
EXAMPLE: MT5C2568DCJ-70L/IT
Package
Device Number
Type
Package
Type
Speed ns Options** Process
Device Number
Speed ns Options** Process
/*
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
F
F
F
F
F
F
F
F
F
-12
-15
-20
-25
-35
-45
-55
-70
-100
L
L
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
/*
/*
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
DCJ
-12
-15
-20
-25
-35
-45
-55
-70
L
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
DCJ
DCJ
DCJ
DCJ
DCJ
DCJ
DCJ
*AVAILABLE PROCESSES
IT= Industrial Temperature Range
XT = Extended Temperature Range
883C = Full Military Processing
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
12ns offered in IT only
**DEFINITION OF OPTIONS
2V Data Retention / Low Power
L
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
14
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
ASI TO DSCC PART NUMBER
CROSS REFERENCE*
ASI Package Designator C & CW
ASI Package Designator EC & ECW
ASI Part #
SMD Part #
5962-8866207NX
5962-8866206NX
5962-8866205NX
5962-8866204NX
5962-8866203NX
5962-8866202NX
ASI Part #
SMD Part #
5962-8866207UX
5962-8866206UX
5962-8866205UX
5962-8866204UX
5962-8866203UX
5962-8866202UX
MT5C2568C-20/883C
MT5C2568C-25/883C
MT5C2568C-35/883C
MT5C2568C-45/883C
MT5C2568C-55/883C
MT5C2568C-70/883C
MT5C2568EC-20/883C
MT5C2568EC-25/883C
MT5C2568EC-35/883C
MT5C2568EC-45/883C
MT5C2568EC-55/883C
MT5C2568EC-70/883C
MT5C2568CW-20/883C
MT5C2568CW-25/883C
MT5C2568CW-35/883C
MT5C2568CW-45/883C
MT5C2568CW-55/883C
MT5C2568CW-70/883C
MT5C2568CW-100/883C
5962-8866207XX
5962-8866206XX
5962-8866205XX
5962-8866204XX
5962-8866203XX
5962-8866202XX
5962-8866201XX
MT5C2568ECW-20/883C
MT5C2568ECW-25/883C
MT5C2568ECW-35/883C
MT5C2568ECW-45/883C
MT5C2568ECW-55/883C
MT5C2568ECW-70/883C
MT5C2568ECW-100/883C
5962-8866207YX
5962-8866206YX
5962-8866205YX
5962-8866204YX
5962-8866203YX
5962-8866202YX
5962-8866201YX
AS5C2568C-12L/883C
AS5C2568C-15L/883C
AS5C2568C-17L/883C
AS5C2568C-20L/883C
AS5C2568C-25L/883C
AS5C2568C-35L/883C
AS5C2568C-45L/883C
AS5C2568C-55L/883C
AS5C2568C-70L/883C
5962-8855213UA
5962-8855212UA
5962-8855211UA
5962-8855210UA
5962-8855206UA
5962-8855205UA
5962-8855209UA
5962-8855208UA
5962-8855207UA
AS5C2568EC-12L/883C
AS5C2568EC-15L/883C
AS5C2568EC-17L/883C
AS5C2568EC-20L/883C
AS5C2568EC-25L/883C
AS5C2568EC-35L/883C
AS5C2568EC-45L/883C
AS5C2568EC-55L/883C
AS5C2568EC-70L/883C
5962-8855213MA
5962-8855212MA
5962-8855211MA
5962-8855210MA
5962-8855206MA
5962-8855205MA
5962-8855209MA
5962-8855208MA
5962-8855207MA
AS5C2568CW-12L/883C
AS5C2568CW-15L/883C
AS5C2568CW-17L/883C
AS5C2568CW-20L/883C
AS5C2568CW-25L/883C
AS5C2568CW-35L/883C
AS5C2568CW-45L/883C
AS5C2568CW-55L/883C
AS5C2568CW-70L/883C
5962-8855213XA
5962-8855212XA
5962-8855211XA
5962-8855210XA
5962-8855206XA
5962-8855205XA
5962-8855209XA
5962-8855208XA
5962-8855207XA
AS5C2568ECW-12L/883C
AS5C2568ECW-15L/883C
AS5C2568ECW-17L/883C
AS5C2568ECW-20L/883C
AS5C2568ECW-25L/883C
AS5C2568ECW-35L/883C
AS5C2568ECW-45L/883C
AS5C2568ECW-55L/883C
AS5C2568ECW-70L/883C
5962-8855213YA
5962-8855212YA
5962-8855211YA
5962-8855210YA
5962-8855206YA
5962-8855205YA
5962-8855209YA
5962-8855208YA
5962-8855207YA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
15
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
ASI TO DSCC PART NUMBER
CROSS REFERENCE*
ASI Package Designator F
ASI Part #
SMD Part #
5962-8866207TX
5962-8866206TX
5962-8866205TX
5962-8866204TX
5962-8866203TX
5962-8866202TX
5962-8866201TX
MT5C2568F-20/883C
MT5C2568F-25/883C
MT5C2568F-35/883C
MT5C2568F-45/883C
MT5C2568F-55/883C
MT5C2568F-70/883C
MT5C2568F-100/883C
AS5C2568F-12L/883C
AS5C2568F-15L/883C
AS5C2568F-17L/883C
AS5C2568F-20L/883C
AS5C2568F-25L/883C
AS5C2568F-35L/883C
AS5C2568F-45L/883C
AS5C2568F-55L/883C
AS5C2568F-70L/883C
5962-8855213TA
5962-8855212TA
5962-8855211TA
5962-8855210TA
5962-8855206TA
5962-8855205TA
5962-8855209TA
5962-8855208TA
5962-8855207TA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
16
相关型号:
©2020 ICPDF网 联系我们和版权申明