5082-3379#T25 [AVAGO]
50V, SILICON, PIN DIODE, HERMETIC SEALED, GLASS PACKAGE-2;
| 型号： | 5082-3379#T25 |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | 50V, SILICON, PIN DIODE, HERMETIC SEALED, GLASS PACKAGE-2 衰减器 开关 测试 二极管 |
| 文件： | 总4页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5719, 1N5767, 5082-3001, 5082-3039,
5082-3077, 5082-3080/81, 5082-3188, 5082-3379
PIN Diodes for RF Switching and Attenuating
Data Sheet
Description/Applications
Features
These general purpose switching diodes are intended for
low power switching applications such as RF duplexers,
antennaswitchingmatrices,digitalphaseshifters,andtime
multiplex filters. The 5082-3188 is optimized for VHF/UHF
bandswitching.
•
•
•
•
Low Harmonic Distortion
Large Dynamic Range
Low Series Resistance
Low Capacitance
The RF resistance of a PIN diode is a function of the current
flowinginthediode.Thesecurrentcontrolledresistorsare
specifiedforuseincontrolapplicationssuchasvariableRF
attenuators, automatic gain control circuits, RF modula-
tors, electrically tuned filters, analog phase shifters, and
RF limiters.
Outline 15
0.41 (.016)
0.36 (.014)
25.4 (1.00)
MIN.
Outline 15 diodes are available on tape and reel. The tape
and reel specification is patterned after RS-296-D.
1.93 (.076)
1.73 (.068)
Maximum Ratings
Junction Operating and
4.32 (.170)
3.81 (.150)
CATHODE
Storage Temperature Range.........................-65°C to +150°C
Power Dissipation 25°C .................................................250 mW
(Derate linearly to zero at 150°C)
Peak Inverse Voltage (PIV)......................................same as VBR
Maximum Soldering Temperature............... 260°C for 5 sec
25.4 (1.00)
MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).
Mechanical Specifications
TheAvagoOutline15packagehasaglasshermeticsealwith
dumet leads. The lead finish is 95-5 tin-lead (SnPb) for all
PIN diodes. The leads on the Outline 15 package should be
restrictedsothatthebendstartsatleast1/16 inch(1.6 mm)
from the glass body. Typical package inductance and ca-
pacitance are 2.5 nH and 0.13 pF, respectively. Marking is
by digital coding with a cathode band.
General Purpose Diodes
Electrical Specifications at TA = 25°C
Maximum
Minimum
Breakdown
Voltage
Maximum
Part
Number
5082-
Total
Residual Series
Resistance
RS (Ω)
Effective Carrier
Lifetime
Reverse Recovery
Time
Capacitance
CT (pF)
VBR (V)
τ (ns)
trr (ns)
General Purpose Switching and Attenuating
3001
3039
1N5719
3077
0.25
0.25
0.3**
0.3
200
150
150
200
1.0
1.25
1.25
1.5
100 (min.)
100 (min.)
100 (min.)
100 (min.)
100 (typ.)
100 (typ.)
100 (typ.)
100 (typ)
Band Switching
3188
1.0*
V = 50 V
35
VR = VBR
Measure
IR ≤ 10 µA
0.6**
70 (typ.)*
IF = 50 mA
IR = 250 mA
*IF = 10 mA
*IR = 6 mA
12 (typ.)
IF = 20 mA
VR = 10 V
Test
IF =100 mA
*IF = 20 mA
**IF = 10 mA
f = 100 MHz
R
Conditions
*VR = 20 V
**VR = 100 V
f = 1 MHz
90% Recovery
Notes:
Typical CW power switching capability for a shunt switch in a 50Ω system is 2.5 W.
RF Current Controlled Resistor Diodes
Electrical Specifications at TA = 25°C
Max.
Difference
in
Resistance
vs. Bias
Max.
Residual
Series
Resistance
RS (Ω)
High
Low
Effective
Carrier
Lifetime
τ(ns)
Min.
Breakdown
Voltage
VBR (V)
Max.
Total
Capacitance
CT (pF)
Resistance
Resistance
Limit, RH (Ω)
Limit, RL (Ω)
Part
Number
Min. Max.
Min. Max.
Slope, Dc
5082-3080
1N5767*
5082-3379
5082-3081
1300 (typ.)
1300 (typ.)
1300 (typ.)
2500 (typ.)
100
100
50
2.5
2.5
0.4
0.4
0.4
0.4
1000
8**
1000
1500
8**
8**
8**
100
3.5
Test
IF = 50 mA
VR = VBR, IF = 100 mA
VR = 50 V
IF = 0.01 mA
f = 100 MHz
IF = 1.0 mA
Batch
Conditions IR = 250 mA Measure f = 100 MHz f = 1 MHz
IR ≤ 10 µA
IF = 20 mA** Matched at
f = 100 MHz IF = 0.01 mA
and 1.0 mA
f = 100 MHz
*The 1N5767 has the additional specifications: τ = 1.0 msec minimum
IR = 1 µA maximum at VR = 50 V
VF = 1 V maximum at IF = 100 mA.
2
Typical Parameters at TA = 25°C (unless otherwise noted)
10,000
1000
100
10
100,000
10,000
1000
100
100
10
1
5082-3001, 3039,
3077, 3080
IN5719
5082-3001
5082-3039
5082-3077
IN5719
5082-3081
125°C
25°C
–60°C
0.1
5082-3080
5082-3379
1
10
0.1
1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001 0.01
0.1
10
100
0.001 0.01
0.1
10
100
1
1
V
– FORWARD VOLTAGE (V)
I
– FORWARD BIAS CURRENT (mA)
I
F
– FORWARD BIAS CURRENT (mA)
F
F
Figure 3. Typical RF Resistance vs.
Forward Bias Current.
Figure 1. Forward Current vs. Forward
Voltage.
Figure 2. Typical RF Resistance vs.
Forward Bias Current.
1000
1.0
2.5
2.0
1.5
5082-3001
3039
3077
IN5719
100
.5
V
= 5V
R
1.0
V
= 10V
= 20V
R
R
5082-3188
5082-3039
IN5719
V
.5
5082-3080
5082-3081
5082-3001
5082-3379
40 50 60 70
REVERSE VOLTAGE (V)
10
0
0
0
10
20
40 50
60 70
0
10
20
0
10
20
30
30
30
REVERSE VOLTAGE (V)
FORWARD CURRENT (mA)
Figure 6. Typical Reverse Recovery Time
vs. Forward Current for Various Reverse
Driving Voltages.
Figure 4. Typical Capacitance vs.
Reverse Voltage.
Figure 5. Typical Capacitance vs.
Reverse Voltage.
0
10
10 dB Bridged Tee Attenuator
PIN Diode Cross Modulation
40 dB mV Output Levels
One Input Frequency Fixed 100 MHz
20
10 dB Bridged Tee Attenuator
Unmodulated Frequency 100 MHz
20
30
100% Modulation 15 kHz
40 dB mV Output Levels
40
40
5082-3080
5082-3379
50
60
80
5082-3080
5082-3379
60
5082-3081
70
5082-3081
100
80
0
10 20 30 40 50 60 70 80
FREQUENCY (MHz)
0
10 20 30 40 50 60 70 80
MODULATED FREQUENCY (MHz)
Figure 7. Typical Second Order
Intermodulation Distortion.
Figure 8. Typical Cross Intermodulation
Distortion.
3
Diode Package Marking
1N5xxx
5082-xxxx
would be marked:
1Nx
xxx
xx
xx
YWW
YWW
where xxxx are the last four digits of the 1Nxxxx or the 5082-xxxx part num-
ber. Y is the last digit of the calendar year. WW is the work week of manufac-
ture.
Examples of diodes manufactured during workweek 45 of 1999:
1N5712
would be marked:
5082-3080
1N5
712
945
30
80
945
Part Number Ordering Information
Part Number
No. of devices
2500
Container
5082-3xxx#T25/1N57xx#T25
5082-3xxx#T50/ 1N57xx#T50
5082-3xxx/ 1N57xx
Tape & Reel
Tape & Reel
Antistatic bag
5000
100
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved. Obsoletes 5989-3339EN
AV02-0477EN - June 6, 2007
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