ASDL-6771-C22 [AVAGO]
High Sensitivity Silicon NPN Phototransistor in Side Look Package; 高灵敏度NPN硅光电晶体管在侧面看包装
| 型号： | ASDL-6771-C22 |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | High Sensitivity Silicon NPN Phototransistor in Side Look Package |
| 文件： | 总4页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ASDL-6771
High Sensitivity Silicon NPN Phototransistor in Side Look Package
Data Sheet
Description
Features
ASDL-6771 is a silicon phototransistor encapsulated in red • Side Look Package
Side Look package. It has high sensitivity, low dark current
and a wide spectral response. Collector is denoted by a
flat on the packaging diagram and the shorter of the two
• Wide spectral response
• High Sensitivity
leads. This device matches with infrared emitter ASDL- • High Precision
4772 and is ideal for low cost, high volume applications.
• Low Dark Current
• Narrow Viewing Angle
• Low Cost
• Lead Free & ROHS Compliant
Applications
• Detector in Consumer Electronics
• Detector Industrial Electronics & Equipment
• Coin counters
• Position sensing
• IR Data Communication
• Photo Interrupter
ꢀ
Ordering Information
Part Number
Lead Form
Color
Packaging
Shipping Option
ASDL-677ꢀ-Cꢁꢁ
ASDL-677ꢀ-C4ꢀ
Straight
Clear
Tape & Reel
Bulk
4000pcs
ꢁ0Kpcs / Carton
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is + 0.25mm (.010”) unless otherwise noted
3. Lead spacing is measured where leads emerge from package
4. Specifications are subject to change without notice.
ꢁ
Absolute Maximum Ratings at T =25°C
A
Parameter
Symbol
Min.
Max
ꢀ00
ꢂ0
Unit
mW
V
Power Dissipation
P
DISS
Collector Emitter Voltage
Emitter Collector Voltage
Operating Temperature
Storage Temperature
Junction temperature
V
CEO
V
ECo
5
V
T
O
-40
-55
85
°C
T
S
ꢀ00
ꢀꢀ0
°C
T
J
°C
Lead Soldering Temperature
[ .6mm (0.06ꢂ”) From Body ]
ꢁ60°C for 5 seconds
Electrical Characteristics at 25°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Collector-Emitter
Breakdown Voltage
V
V
V
ꢂ0
V
Ic= ꢀmA
Ee = 0mW/cm
(BR)CEO
(BR)ECO
CE(SAT)
CEO
ꢁ
ꢁ
ꢁ
Emitter-Collector
Breakdown Voltage
5
V
Ie = ꢀ00µA
Ee = 0mW/cm
Collector Emitter
Saturation Voltage
0.ꢀ
0.ꢀ
ꢂ50
0.4
V
Ic = ꢀ00µA
Ee = ꢀmW/cm
Collector Dark Current
I
ꢀ00
nA
°C/W
V =ꢀ0V
CE
Ee=0mW/cm
ꢁ
Thermal Resistance,
Junction to Pin
Rq
JP
Optical Characteristics at 25°C
Parameter
Symbol
ꢁθ
Min.
Typ.
ꢂ0
Max.
Unit
Deg
nm
nm
µs
Condition
Viewing Angle
ꢀ/ꢁ
Wavelength of Peak sensitivity
Spectral BandWidth
Rise Time
λ
PK
900
900
ꢁ0
Δλ
400
ꢀꢀ00
t
r
V = 5V
CC
I = ꢀmA
C
R = ꢀKΩ
L
Fall Time
t
f
ꢁ0
µs
V = 5V
CC
I = ꢀmA
C
R = ꢀKΩ
L
On State Collector Current
I
ꢀ.ꢁ
5
mA
V = 5V
CE
Ee = ꢀmW/cm
λ = 940nm
C(ON)
ꢁ
ꢂ
Typical Electrical/Optical Characteristics Curves (T =25˚C unless otherwise indicated)
A
120
100
10
1
100
80
60
0.1
40
20
0
0.01
0
0
40
80
120
-40 -20
0
20 40 60 80 100
Ta-Ambient Temperature- oC
Ta-Ambient Temperature- oC
FIGURE 1. COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE
FIGURE 2. COLLECTOR POWER DISSIPATION VS AMBIENT TEMPERATURE
200
Vcc=5V
VRL=1V
F =100Hz
180
4.0 Vce= 5V
160
140
120
100
80
PW =1ms
3.0
2.0
1.0
0
60
40
20
0
0
2
4
6
8
10
0
1
2
3
4
5
RL-Load Resistance-K
FIGURE 3. RISE AND FALL TIME VS LOAD RESISTANCE
Ee-Irradiance-mW/cm 2
FIGURE 4. RELATIVE COLLECTOR CURRENT VS IRRADIANCE
10o 20o
0o
30o
40o
1.0
50o
60o
0.9
0.8
70o
80o
90o
0.7
0.5 0.3 0.1
0.2 0.4 0.6
FIGURE 5. SENSITIVITY DIAGRAM
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © ꢁ007 Avago Technologies Limited. All rights reserved.
AV0ꢁ-00ꢀ5EN - January ꢁꢁ, ꢁ007
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