HSMP-383X [AVAGO]

Surface Mount RF PIN Diodes;
HSMP-383X
型号: HSMP-383X
厂家: AVAGO TECHNOLOGIES LIMITED    AVAGO TECHNOLOGIES LIMITED
描述:

Surface Mount RF PIN Diodes

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中文:  中文翻译
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HSMP-383x  
Surface Mount RF PIN Diodes  
Data Sheet  
Description/Applications  
Features  
Theꢀ HSMP-383xꢀ seriesꢀ ofꢀ generalꢀ purposeꢀ PINꢀ diodesꢀ  
areꢀ designedꢀ forꢀ twoꢀ classesꢀ ofꢀ applications.ꢀ Theꢀ firstꢀ  
isattenuatorswherecurrentconsumptionisthemostꢀ  
importantꢀdesignꢀconsideration.ꢀTheꢀsecondꢀapplicationꢀ  
forꢀ thisꢀ seriesꢀ ofꢀ diodesꢀ isꢀ inꢀ switchesꢀ whereꢀ lowꢀ  
capacitanceꢀisꢀtheꢀdrivingꢀissueꢀforꢀtheꢀdesigner.  
ꢀ DiodesꢀOptimizedꢀfor:ꢀ  
LowꢀCapacitanceꢀSwitchingꢀ  
LowꢀCurrentꢀAttenuator  
ꢀ SurfaceꢀMountꢀSOT-23ꢀPackageꢀ  
SingleꢀandꢀDualꢀVersionsꢀ  
TapeꢀandꢀReelꢀOptionsꢀAvailable  
[1]  
TheHSMP-386xseriesꢀTotalCapacitance(CT)andꢀTotalꢀ  
Resistanceꢀ(RT)ꢀareꢀtypicalꢀspecifications.ꢀForꢀapplicationsꢀ  
thatꢀ requireꢀ guaranteedꢀ performance,ꢀ theꢀ generalꢀ  
purposeꢀHSMP-383xꢀseriesꢀisꢀrecommended.  
ꢀ LowꢀFailureꢀinꢀTimeꢀ(FIT)ꢀRate  
ꢀ Lead-free  
Note:  
1.ꢀ ForꢀmoreꢀinformationꢀseeꢀtheꢀSurfaceꢀMountꢀPINꢀReliabilityꢀDataꢀSheet.  
ASPICEmodelisnotavailableforPINdiodesasSPICEꢀ  
doesꢀ notꢀ provideꢀ forꢀ aꢀ keyꢀ PINꢀ diodeꢀ characteristic,ꢀ  
carrierꢀlifetime.  
Package Lead Code Identification (Top View)  
SERIES  
SINGLE  
#2  
#0  
COMMON  
ANODE  
COMMON  
CATHODE  
#3  
#4  
[1]  
Absolute Maximum Ratings TC = 25°C  
Symbol  
Ifꢀ  
Parameter  
Units  
Absolute Maximum  
ForwardꢀCurrentꢀ(1ꢀmsꢀPulse)ꢀ  
TotalꢀDeviceꢀDissipationꢀ  
PeakꢀInverseꢀVoltageꢀ  
JunctionꢀTemperatureꢀ  
StorageꢀTemperatureꢀ  
Ampꢀ  
1
[2]ꢀ  
Ptꢀ  
mW  
—ꢀ  
250  
Pivꢀ  
Tjꢀ  
SameꢀasꢀV  
BR  
°Cꢀ  
°Cꢀ  
150  
TSTG  
-65ꢀtoꢀ150  
Notes:  
1.ꢀ Operationꢀinꢀexcessꢀofꢀanyꢀoneꢀofꢀtheseꢀconditionsꢀmayꢀresultꢀinꢀpermanentꢀꢀdamageꢀtoꢀ  
thisꢀdevice.  
2.ꢀ CWꢀPowerꢀDissipationꢀatꢀTLEADꢀ=ꢀ25°C.ꢀDerateꢀtoꢀzeroꢀatꢀmaximumꢀratedꢀtemperature.  
PIN General Purpose Diodes, Electrical Specifications TC = 25°C  
Minimum  
Breakdown  
Voltage  
Maximum  
Series  
Resistance  
RS (Ω)  
Maximum  
Total  
Capacitance  
CT (pF)  
Part  
Number  
HSMP-  
Package  
Marking  
Code  
Lead  
Code  
Configuration  
VBR (V)  
3830ꢀ  
3832ꢀ  
3833ꢀ  
3834ꢀ  
K0ꢀ  
K2ꢀ  
K3ꢀ  
K4ꢀ  
0ꢀ  
2ꢀ  
3ꢀ  
4ꢀ  
Singleꢀ  
Series  
CommonꢀAnode  
CommonꢀCathode  
200ꢀ  
1.5ꢀ  
0.3  
TestꢀConditionsꢀ  
VRꢀ=ꢀVBRꢀ  
Measureꢀ  
IRꢀ≤ꢀ10ꢀmA  
IFꢀ=ꢀ100ꢀmAꢀ  
fꢀ=ꢀ100ꢀMHzꢀ  
VRꢀ=ꢀ50ꢀV  
fꢀ=ꢀ1ꢀMHz  
Typical Parameters at TC = 25°C  
Part Number  
HSMP-  
Series Resistance  
RS (Ω)  
Carrier Lifetime  
Reverse Recovery Time  
Total Capacitance  
CT (pF)  
τ (ns)  
Trr (ns)  
383xꢀ  
20ꢀ  
500ꢀ  
80ꢀ  
0.20ꢀ@ꢀ50ꢀV  
TestꢀConditionsꢀ  
IFꢀ=ꢀ1ꢀmAꢀ  
fꢀ=ꢀ100ꢀMHzꢀ  
IFꢀ=ꢀ50ꢀmAꢀ  
IRꢀ=ꢀ250ꢀmAꢀ  
VRꢀ=ꢀ10ꢀV  
IFꢀ=ꢀ20ꢀmA  
90%ꢀRecovery  
2
Typical Parameters at TC = 25°C (unless otherwise noted), Single Diode  
0.35  
1000  
100  
10  
100  
0.30  
10  
1 MHz  
0.25  
0.20  
1
100 MHz  
1 GHz  
1
0.1  
125C 25C –50C  
0.2 0.4 0.6 0.8  
– FORWARD VOLTAGE (mA)  
0.01  
0.1  
0.01  
0.15  
0
1.0 1.2  
0
2
4
6
8
10 12 14 16 18 20  
0.1  
I – FORWARD BIAS CURRENT (mA)  
F
1
10  
100  
V
REVERSE VOLTAGE (V)  
F
Figure 2. RF Capacitance vs. Reverse Bias.  
Figure 3. RF Resistance at 25C vs. Forward Bias Current.  
Figure 1. Forward Current vs. Forward Voltage.  
120  
120  
1000  
Diode Mounted as a  
Series Attenuator in a  
50 Ohm Microstrip and  
Tested at 123 MHz  
Diode Mounted as a  
Series Attenuator  
in a 50 Ohm Microstrip  
HSMP-3830  
110  
115  
100 and Tested at 123 MHz  
110  
V
V
= 5V  
R
90  
80  
70  
60  
50  
40  
105  
100  
95  
= 10V  
= 20V  
R
R
100  
V
90  
85  
10  
10  
20  
FORWARD CURRENT (mA)  
30  
1000  
100  
10  
1
10  
30  
DIODE RF RESISTANCE ()  
I
– FORWARD BIAS CURRENT (mA)  
F
Figure 6. Reverse Recovery Time vs. Forward Current  
for Various Reverse Voltage.  
Figure 4. 2nd Harmonic Input Intercept Point vs.  
Diode RF Resistance for Attenuators.  
Figure 5. 2nd Harmonic Input Intercept Point vs.  
Forward Bias Current for Switches.  
3
Typical Applications for Multiple Diode Products  
RF COMMON  
RF COMMON  
RF 2  
RF 1  
RF 1  
RF 2  
BIAS  
BIAS  
BIAS 1  
BIAS 2  
Figure 8. High Isolation SPDT Switch, Dual Bias.  
Figure 7. Simple SPDT Switch, Using Only Positive Current.  
RF COMMON  
RF COMMON  
BIAS  
RF 1  
RF 2  
RF 2  
RF 1  
BIAS  
Figure 9. Switch Using Both Positive and Negative Current.  
Figure 10. Very High Isolation SPDT Switch, Dual Bias.  
4
Typical Applications for Multiple Diode Products (continued)  
VARIABLE BIAS  
RF IN/OUT  
INPUT  
FIXED  
BIAS  
VOLTAGE  
Figure 11. Four Diode π Attenuator. See AN1048 for details.  
BIAS  
Figure 12. High Isolation SPST Switch (Repeat Cells as Required).  
5
Package Dimensions  
Outline 23 (SOT-23)  
Recommended PCB Pad Layout  
for Avago’s SOT-23 Products  
0.039  
1
e2  
0.039  
1
e1  
0.079  
2.0  
E1  
E
XXX  
0.035  
0.9  
e
L
0.031  
0.8  
B
D
C
inches  
mm  
Dimensions in  
DIMENSIONS (mm)  
SYMBOL  
MIN.  
0.79  
0.000  
0.30  
0.08  
2.73  
1.15  
0.89  
1.78  
0.45  
2.10  
0.45  
MAX.  
1.20  
0.100  
0.54  
0.20  
3.13  
1.50  
1.02  
2.04  
0.60  
2.70  
0.69  
A
A1  
B
C
D
E1  
e
e1  
e2  
E
A
A1  
Notes:  
XXX-package marking  
Drawings are not to scale  
L
Package Characteristics  
LeadꢀMaterialꢀ.............................................................................................................................Alloyꢀ42  
LeadꢀFinish..........................................................................................Tinꢀ100%ꢀ(Lead-freeꢀoption)  
MaximumꢀSolderingꢀTemperatureꢀ............................................................. 260°Cꢀforꢀ5ꢀseconds  
MinimumꢀLeadꢀStrength............................................................................................2ꢀpoundsꢀpull  
TypicalꢀPackageꢀInductance....................................................................................................... 2ꢀnH  
TypicalꢀPackageꢀCapacitanceꢀ...............................................................0.08ꢀpFꢀ(oppositeꢀleads)  
Ordering Information  
Specifyꢀpartꢀnumberꢀfollowedꢀbyꢀoption.ꢀForꢀexample:  
ꢀꢀꢀꢀꢀꢀHSMPꢀꢀ-ꢀꢀꢀ383xꢀꢀꢀꢀ-ꢀꢀꢀXXX  
BulkꢀorꢀTapeꢀandꢀReelꢀOption  
PartꢀNumber  
SurfaceꢀMountꢀPINꢀDiode  
Profile Option Descriptions  
-BLKGꢀ=ꢀBulk  
-TR1Gꢀ=ꢀ3Kꢀpc.ꢀTapeꢀandꢀReel,ꢀDeviceꢀOrientation;ꢀSeeꢀFigureꢀ13  
-TR2Gꢀ=ꢀ10Kꢀpc.ꢀTapeꢀandꢀReel,ꢀDeviceꢀOrientation;ꢀSeeꢀFigureꢀ13  
TapeꢀandꢀReelingꢀconformsꢀtoꢀElectronicꢀIndustriesꢀRS-481,ꢀ“TapingꢀofꢀSurfaceꢀ  
MountedꢀComponentsꢀforꢀAutomatedꢀPlacement.”  
6
Device Orientation For Outlines SOT-23  
REEL  
TOP VIEW  
4 mm  
END VIEW  
8 mm  
ABC  
ABC  
ABC  
ABC  
CARRIER  
TAPE  
USER  
FEED  
DIRECTION  
Note: "AB" represents package marking code.  
"C" represents date code.  
COVER TAPE  
Figure 13. Options -TR1, -TR2 for SOT-23 Packages.  
Tape Dimensions and Product Orientation For Outline SOT-23  
P
P
D
2
E
P
0
F
W
D
1
t1  
Ko  
13.5° MAX  
8° MAX  
9° MAX  
B
A
0
0
DESCRIPTION  
SYMBOL  
SIZE (mm)  
SIZE (INCHES)  
CAVITY  
LENGTH  
WIDTH  
DEPTH  
PITCH  
A
B
K
P
3.15 ± 0.10  
2.77 ± 0.10  
1.22 ± 0.10  
4.00 ± 0.10  
1.00 + 0.05  
0.124 ± 0.004  
0.109 ± 0.004  
0.048 ± 0.004  
0.157 ± 0.004  
0.039 ± 0.002  
0
0
0
BOTTOM HOLE DIAMETER  
D
1
PERFORATION  
CARRIER TAPE  
DIAMETER  
PITCH  
POSITION  
D
1.50 + 0.10  
4.00 ± 0.10  
1.75 ± 0.10  
0.059 + 0.004  
0.157 ± 0.004  
0.069 ± 0.004  
P
E
0
WIDTH  
W
8.00+0.300.10 0.315+0.0120.004  
THICKNESS  
t1  
0.229 ± 0.013  
0.009 ± 0.0005  
DISTANCE  
BETWEEN  
CAVITY TO PERFORATION  
(WIDTH DIRECTION)  
F
3.50 ± 0.05  
0.138 ± 0.002  
CENTERLINE  
CAVITY TO PERFORATION  
(LENGTH DIRECTION)  
P
2.00 ± 0.05  
0.079 ± 0.002  
2
For product information and a complete list of distributors, please go to our web site: www.avagotech.com  
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.  
Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5989-4027EN  
AV02-1425EN - June 2, 2009  

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