MGA-16216-BLKG [AVAGO]
Dual LNA for Balanced Application 1440 â 2350 MHz; 双路低噪声放大器的平衡施用1440 ???? 2350兆赫
| 型号： | MGA-16216-BLKG |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | Dual LNA for Balanced Application 1440 â 2350 MHz |
| 文件： | 总17页 (文件大小：744K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MGA-16216
Dual LNA for Balanced Application 1440 – 2350 MHz
Data Sheet
Description
Features
Avago Technologies’ MGA-16216 is an ultra low-noise • Ultra Low Noise Figure
high linearity amplifier pair with built-in active bias and
• Variable Bias and Shutdown functionality
shutdown features for balanced applications in the 1950
MHz band. Shutdown functionality is achieved using
a single DC voltage input pin. High linearity is achieved
through the use of Avago Technologies’ proprietary GaAs
• High IIP3: +17 dBm typ.
[1]
• GaAs E-pHEMT Technology
3
• Small package size: 4.0 x 4.0 x 0.85 mm
• RoHS and MSL1 compliant.
[1]
Enhancement-mode pHEMT process . It is housed in a
3
miniature 4.0 x 4.0 x 0.85 mm 16-pin Quad Flat No-lead
(QFN). The compact footprint coupled with ultra low noise
and high linearity makes MGA-16216 an ideal choice for
basestation transmitters and receivers.
Typical Performances
1950 MHz @ 4.8 V, 52.5 mA (typ per amplifier)
• Gain: 18.4 dB
For applications > 1950 MHz, it is recommended to use
MGA-16316 1950-4000 MHz. For applications < 1450 MHz,
it is recommended to use MGA-16116 450-1450 MHz. All 3
products share the same package and pin out configuration.
[2]
• NF: 0.32 dB
• IIP3: 17.1 dBm
• P1dB: 19.5 dBm
Component Image
• Shutdown voltage Vsd range > 1.5 V
3
4.0 x 4.0 x 0.85 mm 16-Lead QFN
• Total shutdown current (Vsd1, Vsd2 = 3 V): 4.8 mA
Applications
Note:
Package marking provides orientation and
identification
“16216 “ = Device Code
“YYWW” = Date Code identifies year and
AVAGO
• Basestation Transmitter and Receivers requiring
16216
balanced configuration
YYWW
• Ultra low-noise RF amplifiers.
work week of manufacturing
XXXX
“XXXX” = Last 4 digit of assembly lot
Notes:
number
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Measured at RFin pin of packaged part, other losses deembedded.
3. Good RF practice requires all unused pins to be grounded.
Pin Configuration
Pin Use
Pin Use
1
2
3
4
5
6
7
8
9
RFIN1
10 GND
GND
GND
RFIN2
11 GND
Pin 1
Pin 2
Pin 3
Pin 4
Pin 12
Pin 11
Pin 10
Pin 9
12 RFOUT1
13 Not used
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 300 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Pin 17
Bias_out2 14 Bias_in1
Vsd2 15 Vsd1
Bias_in2 16 Bias_out1
Not used 17 GND
RFOUT2
– –
VIEW FROM THE TOP
[1]
[3]
Absolute Maximum Rating T = 25° C
Thermal Resistance
A
(Vd = 4.8V, Idd = 52.5 mA,T =100° C)
jc
Symbol
Vdd
Idd
Parameter
Units
V
Absolute Maximum
c
q
= 43.1°C/W
Drain Voltage, RF output to ground
Drain Current
5.5
Notes:
mA
V
100
5.5
1. Operation of this device is excess of any
of these limits may cause permanent
damage.
2. Source lead temperature is 25° C. Derate
23 mW/°C for Tc > 126° C.
3. Thermal resistance measured using 150° C
Infra-Red Microscopy Technique.
Vsd
Pin
Shutdown Voltage
CW RF Input Power with LNA On
CW RF Input Power with LNA Off
Power Dissipation
dBm
dBm
mW
°C
27
Pin
27
Pd
550
150
-65 to 150
Tj
Junction Temperature
Storage Temperature
Tstg
°C
Electrical Specifications
T = 25° C, Vdd1 = Vdd2 = 4.8 V, Vsd1 = Vsd2 = 0 V at Rbias = 1 Kohm, RF performance at 1950 MHz, CW operation unless
A
otherwise stated.
Symbol
Vdd
Parameter and Test Condition
Supply Voltage
Units
V
Min.
Typ.
4.8
Max.
Idd
Total Supply Current per amplifier (Idq+Ibias)
Gain
mA
dB
44
52.5
18.4
0.32
19.5
17.1
-9.0
-4.4
-30
65
Gain
17.2
19.4
0.55
NF [1]
OP1dB
IIP3 [2]
S11
Noise Figure
dB
Output Power at 1dB Gain Compression
Input Third Order Intercept Point
Input Return Loss, 50 Ω source
Output Return Loss, 50 Ω load
Reverse Isolation
dBm
dBm
dB
14
S22
dB
S12
dB
S31
Isolation between RFin1 and RFin2
Maximum Shutdown voltage required to turn ON LNA
Minimum Shutdown voltage required to turn OFF LNA
Current at Vdd with Vsd = 0 V
Current at Vdd with Vsd = 3 V
Current at Vsd with Vsd = 0 V
Current at Vsd with Vsd = 3 V
Current at Vbias with Vsd = 0 V
Current at Vbias with Vsd = 3 V
dB
-41.6
0.5
Vsd1,2 [3]
Vsd1,2 [3]
Idq [4]
V
V
2.0
mA
mA
mA
mA
mA
mA
48.5
0.378
4
Isd [4]
Ibias [4]
Notes:
0.176
3.0
4.542
1. Noise figure at the DUT RF Input pin, board losses are deembedded.
2. IIP3 test condition: FRF1-FRF2 = 1 MHz with input power of -20 dBm per tone.
3. Vsd1 and Vsd2 are active LOW.
4. Refer to Figure 6 for more details.
2
Product Consistency Distribution Charts
LSL
USL
USL
40
45
50
55
60
65
0.1
0.2
0.3
0.4
0.5
Figure 1. Idd, LSL = 44 mA , nominal = 52.5 mA, USL = 65 mA
Figure 2. NF, nominal = 0.32 dB, USL = 0.55 dB
LSL
LSL
USL
14
15
16
17
18
19
17
17.5
18
18.5
19
19.5
Figure 3. IIP3, LSL = 14 dBm, nominal = 17.1 dBm
Figure 4. Gain, LSL = 17.2 dB, nominal = 18.4 dB, USL = 19.4 dB
Notes:
1. Distribution data sample size is 3000 samples taken from 6 different wafer lots. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
2. Circuit trace losses for NF have been de-embedded from measurements above.
3
Demo Board Layout
Demo Board Schematic
APRIL 2011
R9
R10
C24
C25
C8
C20
C3
C6
C2
C23
R3
C7
R4
R1
C1
L1
L3
C9
RFIN
RFOUT
C16
C19
L4
L2
C12
C21
R6
C13
R7
C22
R8
C26
Figure 6. Demo Board Schematic Diagram
MGA-16X16
Demoboard
(4-Port)
RO4350
DK 3.48
H 10mil
W 0.58mm
G 0.45mm
Rev 1
Figure 5. Demo Board Layout Diagram
Notes:
1. Recommended PCB material is 10 mils Rogers RO4350.
2. Suggested component values may vary according to layout and PCB material.
3. Input board loss at 1950 MHz is 0.11dB
4. The schematic is shown with the assumption that similar PCB is used for all MGA-16116, MGA-16216 and MGA-16316.
5. Detail of the components needed for this product is shown in Table 1.
6. R1 and R6 are for low frequency stability.
7. Bias to each LNA is adjustable using R3 and R8 (see Figure 6). Increasing R3 and R8 will reduce bias current (Idd) and vice-versa.
8. R9/R10 are stability improvement resistors that may not be needed in actual application. They are included in the demoboard to provide isolation
from power supply noise.
9. Center Paddle is grounded.
Table 1. Component list for 1950 MHz matching
PART
Size
Value
Detail Part Number
GRM0335C1E100JD01D
GJM1555C1H180JB01D
GRM033R71C102KA01D
GRM155R71C104KA88D
GRM21BR60J475KA11L
GRM0335C1E200GD01D
–
C1, C12
0201
0402
0201
0402
0805
0201
0402
0603
0603
0402
0402
0402
10 pF
C3, C16
18 pF
C9, C19
1000 pF
0.1 mF
4.7 mF
22 pF
C2, C8, C13, C22
C6, C20, C23, C24
C7, C21
C25, C26
L1, L2
NOT USED
12 nH
LQW18AN12NG00D
LQW18AN6N2C00D
RK73B1ETTP0R0J
L3, L4
6.2 nH
0 ohm
1 kohm
10 ohm
R1, R4, R6, R7
R3, R8
RK73B1ELTP102J
R9, R10
RK73B1ETTP100J
4
Table 2. Below is the table showing the MGA-16216 Reflection Coefficient Parameters tuned for Maximum OIP3. Vdd = 4.8 V,
Idd = 35 mA per amplifier. Input gamma is tuned for Fmin. The reflection coefficients are for single amplifier.
Gamma Load Position
[1]
Frequency (MHz)
1440
Magnitude
0.514
Angle
100.8
115.2
145.9
162.6
IIP3 (dBm)
13.70
Gain (dB)
22.36
1750
0.514
15.14
20.82
1950
0.771
20.92
16.48
2350
0.643
19.70
16.12
Table 3. Below is the table showing the MGA-16216 Reflection Coefficient Parameters tuned for Maximum OIP3. Vdd = 4.8 V,
Idd = 55 mA per amplifier. Input gamma is tuned for Fmin. The reflection coefficients are for single amplifier.
Gamma Load Position
[1]
Frequency (MHz)
1440
Magnitude
0.643
Angle
104.5
80.0
IIP3 (dBm)
18.23
Gain (dB)
22.33
1750
0.385
19.16
21.01
1950
0.771
145.9
143.9
23.25
16.60
2350
0.514
21.07
17.94
Table 4. Below is the table showing the MGA-16216 Reflection Coefficient Parameters tuned for Maximum OIP3. Vdd = 4.8 V,
Idd = 75 mA per amplifier. Input gamma is tuned for Fmin. The reflection coefficients are for single amplifier.
Gamma Load Position
[1]
Frequency (MHz)
1440
Magnitude
0.257
Angle
89.9
IIP3 (dBm)
18.09
Gain (dB)
22.04
1750
0.514
129.6
119.6
149.9
20.21
20.33
1950
0.128
20.48
18.31
2350
0.257
21.39
16.88
Notes:
1. IIP3 test condition: FRF1-FRF2 = 1 MHz with input power of -20 dBm per tone.
2. Idd can be obtained by varying the Vg1/Vg2. Refer to figure 7.
Figure 7. RFinput and RFoutput Reference Plane
Note:
1. Maximum OIP3 is measured on coplanar waveguide made on 0.010 inch thick ROGER 4350.
5
Typical 1950 MHz RF Performance Plots For Single Amplifier
RF performance at T = 25° C, Vdd = 4.8 V, Idd = 52 mA, LNA mode, measured on demo board in Figure 5. Signal is CW
A
unless stated otherwise. Application Test Circuit is shown in Figure 6 and Table 1. IIP3 test condition: FRF1-FRF2 = 1 MHz
with input power of -20 dBm per tone.
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
22
21
20
19
18
17
16
15
25 °C
-40 °C
100 °C
25 °C
-40 °C
100 °C
1.4 1.5 1.6 1.7 1.8 1.9
Frequency (GHz)
2
2.1 2.2 2.3 2.4
1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3
Frequency (GHz)
Figure 8. NF vs Frequency vs Temperature [1]
Figure 9. Gain vs Frequency vs Temperature
20
19
18
17
16
15
14
21
20
19
18
17
16
15
14
25 °C
-40 °C
100 °C
25 °C
-40 °C
100 °C
1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3
Frequency (GHz)
1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3
Frequency (GHz)
Figure 10. IIP3 vs Frequency vs Temperature
Figure 11. OP1dB vs Frequency vs Temperature
30
20
15
10
5
3
2.5
2
S(2,1)
S(1,2)
S(1,1)
S(2,2)
10
0
0
1.5
-10
-20
-30
-40
-5
1
-10
-15
-20
25 °C
-40 °C
100 °C
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Frequency (GHz)
Figure 12. Input Return Loss, Output Return Loss, Gain, Reverse Isolation vs
Frequency
Figure 13. Mu stability factors vs Frequency vs Temperature
6
- 30
- 35
- 40
- 45
- 50
- 55
- 60
- 65
- 70
- 75
3
2.5
2
1.5
1
25 °C
-40 °C
100 °C
0.5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency (GHz)
0
2
4
6
8
10 12 14 16 18 20
Frequency (GHz)
Figure 14. Mu’ stability factors vs Frequency vs Temperature
Figure 15. Input Ports Isolation (S31) vs Frequency
200
180
160
140
120
100
80
55
50
45
40
35
30
25
20
15
10
5
25 °C
-40 °C
100 °C
60
40
20
0
0
500
1000
1500
2000
2500
3000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Rbias (ohm)
Vsd (V)
Figure 16. Idd vs Rbias [2]
Figure 17. Idd vs Vsd
Notes:
1. Circuit trace losses for NF have been de-embedded from measurements above.
2. Rbias is R3 and R8 from Figure 6.
7
Table 5. Typical Scattering Parameters, Vdd = 4.8 V, Idd = 35 mA
LNA SPAR (100 MHz – 20 GHz). The S-parameter is for single amplifier.
Freq
(GHz)
0.1
S11
(dB)
S11
(ang)
S21
(dB)
S21
(ang)
S12
(dB)
S12
(ang)
S22
(dB)
S22
(ang)
-5.967
-0.256
-3.272
-4.480
-5.414
-5.760
-6.970
-7.300
-7.493
-7.527
-7.560
-7.326
-6.920
-6.420
-5.780
-5.130
-4.520
-4.209
-3.740
-2.716
-1.690
-1.250
-0.532
-0.971
-0.171
-0.099
-0.413
-0.689
-1.565
-3.827
-10.485
-12.300
-11.004
-38.907
-44.800
-48.213
-49.321
-53.422
-58.425
-63.400
-64.400
-74.037
-84.245
-94.352
-105.000
-116.000
-124.753
-134.000
-143.000
-168.000
165.000
149.000
135.000
105.000
62.400
46.500
43.890
38.975
6.360
29.400
25.700
23.600
22.200
21.285
18.700
17.500
16.500
16.300
14.300
12.255
10.248
8.414
161.000
110.000
94.579
81.787
76.115
53.457
41.375
29.771
27.370
4.565
-54.136
-41.500
-39.100
-37.300
-36.600
-34.100
-33.000
-32.200
-32.100
-31.262
-31.200
-31.600
-31.800
-31.400
-30.100
-28.600
-28.300
-25.600
-23.100
-21.200
-19.300
-17.000
-16.200
-16.000
-15.800
-14.400
-8.934
69.450
67.641
62.952
59.100
57.374
47.978
42.475
36.900
35.560
24.825
15.200
11.600
13.660
18.900
23.400
24.900
12.149
10.395
-4.646
-1.119
-1.411
-1.541
-1.649
-1.661
-1.812
-1.970
-2.100
-2.143
-2.320
-2.230
-1.930
-1.644
-1.427
-1.340
-1.120
-0.899
-0.701
-0.802
-0.608
-0.071
-0.248
-0.114
-0.594
-0.426
-0.402
-0.828
-1.120
-2.507
-4.484
-4.230
0.5
-27.507
-37.021
-46.227
-51.112
-73.622
-85.851
-99.158
-102.000
-131.000
-161.449
172.000
150.000
132.000
112.502
96.135
84.300
60.390
34.880
9.433
0.7
0.9
1.0
1.45
1.7
1.95
2.0
2.5
3.0
-17.490
-37.352
-55.260
-71.667
-87.649
-103.000
-116.000
-144.000
-171.000
164.000
141.000
114.000
85.720
63.700
40.790
14.775
-53.400
-85.965
-150.000
-167.000
143.000
3.5
4.0
4.5
6.673
5.0
5.155
5.5
3.324
6.0
1.392
7.0
-1.690
-4.532
-7.183
-8.970
-10.400
-12.780
-15.500
-17.300
-15.700
-14.200
-10.800
-12.700
-14.000
-19.300
8.0
9.0
-20.900
-37.200
-54.965
-71.880
-86.995
-98.010
-110.000
-140.400
-167.550
137.000
114.000
68.800
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
-8.985
-19.965
-17.700
-29.595
-46.110
-74.425
-93.840
-104.000
-109.000
-86.815
-132.000
-42.955
-82.300
-85.000
19.900
-7.439
-6.623
-15.500
-13.600
Table 6. Typical Noise Parameters for single amplifier, Vdd = 4.8 V, Idd = 35 mA
Freq
Fmin
dB
Γopt
Mag.
Γopt
Ang.
MHz
1440
1750
1950
2350
Notes:
R
n/50
0.31
0.28
0.34
0.4
0.245
0.256
0.236
0.229
56.3
0.05
0.04
0.03
0.03
76.2
103.5
136.6
1. The Fmin values are based on noise figure measurements at multiple input impedances using Focus source pull test system. From these
measurements a true Fmin is calculated.
2. Scattering and noise parameters are measured on coplanar waveguide made on 0.010 inch thick ROGER 4350. The input reference plane is at the
end of the RFinput pin and the output reference plane is at the end of the RFoutput pin as shown in Figure 7.
3. Idd can be obtained by varying the Vg1/Vg2. Refer to figure 7.
8
Table 7. Typical Scattering Parameters, Vdd = 4.8 V, Idd = 55 mA
LNA SPAR (100 MHz – 20 GHz). The S-parameter is for single amplifier.
Freq
(GHz)
0.1
S11
(dB)
S11
(ang)
S21
(dB)
S21
(ang)
S12
(dB)
S12
(ang)
S22
(dB)
S22
(ang)
-5.557
-0.305
-3.623
-4.759
-5.503
-5.779
-6.710
-6.940
-7.060
-7.084
-7.030
-6.750
-6.330
-5.846
-5.250
-4.637
-4.060
-3.780
-3.350
-2.430
-1.500
-1.090
-0.375
-0.841
-0.083
-0.047
-0.362
-0.498
-1.335
-3.070
-9.429
-12.900
-11.605
-36.915
-41.300
-44.100
-44.891
-48.722
-53.725
-58.829
-59.830
-69.937
-80.445
-90.952
-102.000
-113.000
-122.502
-132.000
-142.000
-166.049
167.000
150.000
136.000
106.000
63.880
48.000
45.110
40.675
9.996
30.899
26.493
24.290
22.600
21.771
19.000
17.900
16.800
16.600
14.600
12.555
10.600
8.714
160.000
106.926
91.579
79.487
74.030
52.235
40.549
29.171
26.840
4.379
-55.471
-41.700
-39.200
-37.287
-36.515
-34.000
-32.900
-32.100
-32.000
-31.200
-31.100
-31.700
-32.100
-31.800
-30.400
-28.800
-28.500
-25.700
-23.100
-21.200
-19.400
-17.100
-16.300
-16.100
-16.000
-14.700
-8.894
80.373
68.726
64.259
60.213
58.345
48.500
42.600
36.671
35.440
24.088
13.855
10.005
12.320
18.667
23.900
26.200
13.339
11.500
-3.906
-1.229
-1.511
-1.622
-1.710
-1.720
-1.852
-2.010
-2.140
-2.176
-2.360
-2.280
-1.980
-1.686
-1.460
-1.372
-1.150
-0.931
-0.721
-0.809
-0.623
-0.069
-0.236
-0.105
-0.593
-0.467
-0.417
-0.777
-0.945
-2.370
-4.523
-4.250
0.5
-27.015
-36.510
-45.727
-50.612
-73.043
-85.351
-98.658
-101.299
-131.000
-161.000
173.000
151.000
132.000
112.753
96.518
84.510
60.595
35.180
9.603
0.7
0.9
1.0
1.45
1.7
1.95
2.0
2.5
3.0
-17.390
-36.952
-54.660
-70.867
-86.674
-102.000
-115.000
-142.000
-169.000
166.000
144.000
118.351
90.600
69.705
47.900
22.375
-46.340
-77.565
-141.000
-165.000
147.000
3.5
4.0
4.5
6.967
5.0
5.445
5.5
3.602
6.0
1.642
7.0
-1.440
-4.292
-6.943
-8.740
-10.165
-12.500
-15.300
-17.300
-15.900
-15.100
-11.200
-13.400
-14.000
-19.700
8.0
9.0
-20.400
-36.600
-53.965
-70.980
-86.195
-97.000
-108.000
-138.000
-163.000
140.000
113.000
69.700
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
-8.655
-19.565
-17.500
-29.695
-46.010
-73.925
-93.400
-104.000
-110.000
-86.900
-132.000
-37.255
-78.700
-85.315
16.200
-7.159
-6.203
-14.500
-13.000
Table 8. Typical Noise Parameters for single amplifier, Vdd = 4.8 V, Idd = 55 mA
Freq
Fmin
dB
Γopt
Mag.
Γopt
Ang.
50
MHz
1440
1750
1950
2350
Notes:
R
n/50
0.31
0.27
0.34
0.38
0.226
0.236
0.161
0.215
0.04
0.04
0.03
0.03
70.7
109
139.4
1. The Fmin values are based on noise figure measurements at multiple input impedances using Focus source pull test system. From these
measurements a true Fmin is calculated.
2. Scattering and noise parameters are measured on coplanar waveguide made on 0.010 inch thick ROGER 4350. The input reference plane is at the
end of the RFinput pin and the output reference plane is at the end of the RFoutput pin as shown in Figure 7.
3. Idd can be obtained by varying the Vg1/Vg2. Refer to figure 7.
9
Table 9. Typical Scattering Parameters, Vdd = 4.8 V, Idd = 75 mA
LNA SPAR (100 MHz – 20 GHz). The S-parameter is for single amplifier.
Freq
(GHz)
0.1
S11
(dB)
S11
(ang)
S21
(dB)
S21
(ang)
S12
(dB)
S12
(ang)
S22
(dB)
S22
(ang)
-5.048
-0.369
-3.752
-4.818
-5.473
-5.706
-6.510
-6.710
-6.790
-6.817
-6.730
-6.446
-6.030
-5.560
-4.990
-4.397
-3.840
-3.579
-3.160
-2.308
-1.410
-1.005
-0.290
-0.776
-0.029
-0.009
-0.339
-0.400
-1.229
-2.610
-8.858
-13.300
-11.807
-35.407
-39.200
-41.713
-42.406
-46.322
-51.400
-56.500
-57.600
-67.737
-78.445
-89.000
-99.900
-112.000
-120.753
-131.000
-140.899
-165.000
168.000
151.000
137.000
108.000
65.400
49.400
46.290
41.900
12.420
-33.355
-76.070
-85.300
14.000
31.797
26.800
24.500
22.800
21.971
19.200
18.000
17.000
16.800
14.763
12.700
10.700
8.874
159.986
105.000
90.279
78.573
73.215
51.757
40.275
29.071
26.740
4.525
-54.599
-41.885
-39.290
-37.400
-36.615
-34.000
-32.975
-32.100
-32.000
-31.200
-31.200
-31.852
-32.300
-32.000
-30.625
-29.000
-28.600
-25.800
-23.180
-21.300
-19.400
-17.100
-16.300
-16.200
-16.010
-14.800
-8.880
73.714
69.437
64.910
60.947
58.915
48.800
42.875
36.729
35.370
23.837
13.700
9.524
-1.269
-1.550
-1.633
-1.720
-1.730
-1.860
-2.010
-2.143
-2.183
-2.380
-2.290
-2.000
-1.704
-1.480
-1.392
-1.170
-0.946
-0.735
-0.829
-0.629
-0.093
-0.261
-0.110
-0.570
-0.460
-0.420
-0.745
-0.836
-2.250
-4.543
-4.270
0.5
-26.707
-36.210
-45.427
-50.312
-72.743
-85.025
-98.258
-101.000
-130.374
-160.449
173.000
151.000
132.000
113.502
96.735
84.800
60.795
35.280
9.803
0.7
0.9
1.0
1.45
1.7
1.95
2.0
2.5
3.0
-17.090
-36.552
-54.160
-70.200
-85.874
-101.000
-114.000
-141.000
-168.000
168.000
146.000
121.000
93.600
73.300
52.180
26.875
-41.700
-71.965
-133.000
-163.000
149.000
3.5
4.0
11.940
18.835
24.700
27.182
14.149
12.495
-3.146
4.5
7.123
5.0
5.592
5.5
3.742
6.0
1.781
7.0
-1.300
-4.132
-6.790
-8.585
-9.996
-12.400
-15.200
-17.300
-16.000
-15.600
-11.500
-13.800
-13.985
-19.800
8.0
9.0
-19.700
-35.950
-53.165
-69.980
-85.295
-96.010
-107.000
-136.000
-160.000
143.000
113.000
70.300
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
-8.550
-19.465
-17.300
-29.490
-45.810
-73.625
-93.040
-104.000
-110.000
-86.900
-132.000
-7.019
-5.943
-13.900
-12.600
Table 10. Typical Noise Parameters for single amplifier, Vdd = 4.8 V, Idd = 75 mA
Freq
Fmin
dB
Γopt
Mag.
Γopt
Ang.
MHz
1440
1750
1950
2350
Notes:
R
n/50
0.33
0.28
0.34
0.4
0.207
0.221
0.134
0.205
50.2
0.04
0.05
0.03
0.03
67.2
109.3
146.5
1. The Fmin values are based on noise figure measurements at multiple input impedances using Focus source pull test system. From
these measurements a true Fmin is calculated.
2. Scattering and noise parameters are measured on coplanar waveguide made on 0.010 inch thick ROGER 4350. The input reference
plane is at the end of the RFinput pin and the output reference plane is at the end of the RFoutput pin as shown in Figure 7.
3. Idd can be obtained by varying the Vg1/Vg2. Refer to figure 7.
10
BALANCED MODE APPLICATION
Electrical Specifications
T = 25° C, Vdd1 = Vdd2 = 4.8 V, Vsd1 = Vsd2 = 0 V at Rbias = 1 Kohm, RF performance at 1950 MHz, CW operation unless
A
otherwise stated.
Symbol
Vdd
Idd
Parameter and Test Condition
Supply Voltage per amplifier
Supply Current per amplifier
Gain
Units
V
Typ.
4.8
mA
dB
50
Gain
NF
18.6
0.489
21.6
20.2
-28.8
-23.2
-30.3
Noise Figure
dB
OP1dB
IIP3
Output Power at 1dB Gain Compression
Input Third Order Intercept Point
Input Return Loss, 50 Ω source
Output Return Loss, 50 Ω load
Reverse Isolation
dBm
dBm
dB
S11
S22
dB
S12
dB
Balanced Amplifier Demo Board Layout
MGA-16X16 Demoboard
(2-Port)
Rev 1
RO4350
DK 3.48
H 10mil
R9
R10
C24
W 0.58mm
G 0.45mm
C20
C6
C2
C23
C25
C8
RFOUT
R3
C7
C5
R4
L3
R1
C1
C4
R5
X2
C11
C10
L1
L2
C3
C9
X1
C19
C16
L4
R7
C18
C21
C12
R6
C13
C17
C14
RFIN
C15
C22
C26
R8
R2
APRIL 2011
Figure 18. Balanced Amplifier Demo Board Layout Diagram
Notes:
1. Recommended PCB material is 10 mils Rogers RO4350.
2. Suggested component values may vary according to layout and PCB material.
3. Input board loss at 1950 MHz is 0.18 dB.
11
Balanced Amplifier Demo Board Schematic
Figure 19. Balanced Amplifier Demo Board Schematic
Table 11. Component list for 1950 MHz Balanced Amplifier Matching
PART
Size
Value
Detail Part Number
C1, C12
0201
0402
0402
0805
0201
0402
0603
0603
0402
0402
0402
0402
–
10 pF
18 pF
0.1 mF
4.7 mF
15 pF
NOT USED
10 nH
4.7 nH
0 ohm
1 kohm
10 ohm
51 ohm
–
GRM0335C1E100JD01D
GJM1555C1H180JB01D
GRM155R71C104KA88D
GRM21BR60J475KA11L
GJM0336C1E150JB01D
C3, C9, C16, C19
C2, C8, C13, C22
C6, C20, C23, C24
C7, C21
C4, C5, C10, C11, C14, C15, C17, C18, C25, C26
L1, L2
L3, L4
R1, R4, R6, R7
R3, R8
R9, R10
R2, R5
X1
LQW18AN10NG00D
LQW18AN4N7D00D
RK73B1ETTP0R0J
RK73B1ELTP102J
RK73B1ETTP100J
RK73B1ETTP510J
X3C19P1-03S
X2
–
–
C1720J5003AHF
12
Typical 1950 MHz RF Performance Plots for Balanced Amplifier
RF performance atT = 25° C, Vdd1 =Vdd2 = 4.8V, Idd1 = Idd2 = 50 mA, LNA mode, measured on demo board in Figure 18.
A
Signal is CW unless stated otherwise. Application Test Circuit is shown in Figure 19 and Table 11. IIP3 test condition:
FRF1-FRF2 = 1 MHz with input power of -20 dBm per tone.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
21
20
19
18
17
16
15
14
25 °C
-40 °C
100 °C
25 °C
-40 °C
100 °C
1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4
Frequency (GHz)
1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3
Frequency (GHz)
Figure 20. NF vs Frequency vs Temperature[1]
Figure 21. Gain vs Frequency vs Temperature
22.0
21.5
21.0
20.5
20.0
19.5
19.0
18.5
18.0
23
22
21
20
19
18
17
25 °C
-40 °C
100 °C
25 °C
-40 °C
100 °C
1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3
Frequency (GHz)
1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3
Frequency (GHz)
Figure 22. IIP3 vs Frequency vs Temperature
Figure 23. OP1dB vs Frequency vs Temperature
30
24
16
8
S(2,1)
20
10
S(1,2)
S(1,1)
S(2,2)
0
0
-10
-20
-30
-40
-50
-8
-16
-24
-32
-40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency (GHz)
Figure 24. Input Return Loss, Output Return Loss, Gain, Reverse Isolation vs
Frequency
13
3
2.5
2
3
2.5
2
1.5
1
1.5
1
25 °C
-40 °C
100 °C
25 °C
-40 °C
100 °C
0.5
0
0.5
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Frequency (GHz)
Frequency (GHz)
Figure 25. Mu stability factors vs Frequency vs Temperature
Figure 26. Mu’ stability factors vs Frequency vs Temperature
Note:
1. Circuit trace losses for NF have been de-embedded from measurements above.
Part Number Ordering Information
Part Number
No. of Devices
100
Container
Antistatic Bag
7”Reel
MGA-16216-BLKG
MGA-16216-TR1G
1000
Package Dimensions
Pin ꢀ Dot
By marking
0.20 Ref.
2.ꢀ0
4.00 0.ꢀ0
Pin #ꢀ Identiꢂcation
Chamfer 0.30 X 45°
0.55
AVAGO
ꢀ62ꢀ6
YYWW
XXXX
0.30
4.00 0.ꢀ0
2.ꢀ0
0.00 ꢁ0.05
0.85 0.ꢀ0
0.65
Bsc
BOTTOM VIEW
TOP VIEW
SIDE VIEW
14
Recommended PCB Land Pattern and Stencil Design
4.000
3.935
0.300
0.270
PIN #1
PIN #1
0.400
0.492
1.980
0.650
2.10 4.000
0.650
3.935
2.10
1.980
0.55
0.485
Stencil Opening
Land Pattern
4.000
0.650
4.000
2.100
Note :
1. ALL DIMENSIONS ARE IN MILIMETERS
2. 4mil stencil thickness is recommended
0.550
Combination of Land Pattern & Stencil Opening
Device Orientation
REEL
USER FEED DIRECTION
AVAGO
AVAGO
16216
YYWW
XXXX
AVAGO
16216
YYWW
XXXX
16216
YYWW
XXXX
CARRIER
TAPE
USER
FEED
DIRECTION
TOP VIEW
END VIEW
COVER TAPE
15
Tape Dimensions
2.00 0.05
8.00 0.10
4.00 0.10
Ø 1.50 0.10
1.75 0.10
5.50 0.05
12.0 0.30
–0.10
Ø1.50 0.25
0.279 0.02
10° MAX
10° MAX
4.25 0.10
4.25 0.10
1.13 0.10
A.
K.
B.
16
Reel Dimensions – 7 inch
6.2ꢀ mm EMBOSSED LETTERS
LETTERING THICKNESS: 1.6 mm
SLOT HOLE "a"
SEE DETAIL "X"
SLOT HOLE "b"
Ø 178.0 0.ꢀ
FRONT
BACK
6
PS
SLOT HOLE (2x)
180° APART.
6
PS
SLOT HOLE "a": 3.0 0.ꢀ mm (1x)
SLOT HOLE "b": 2.ꢀ 0.ꢀ mm (1x)
FRONT VIEW
RECYCLE LOGO
1.ꢀ MIN.
+1.ꢀ*
12.4
+0.ꢀ
-0.2
Ø 13.0
-0.0
R10.6ꢀ
Rꢀ.2
Ø 20.2 MIN.
FRONT
BACK
DETAIL "X"
3.ꢀ
DETAIL "Y"
(Slot Hole)
Ø 178.0 0.ꢀ
Ø ꢀ1.2 0.3
EMBOSSED RIBS
RAISED: 0.2ꢀ mm, WIDTH: 1.2ꢀ mm
18.0*
MAX.
SEE DETAIL "Y"
BACK VIEW
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved.
AV02-3722EN - October 31, 2012
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明