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MSA-0436-BLKG

更新时间：2025-07-10 14:25:29
品牌：AVAGO
描述：0MHz - 3800MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, CERAMIC, 36 MICRO-X, 4 PIN

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MSA-0436-BLKG 概述

0MHz - 3800MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, CERAMIC, 36 MICRO-X, 4 PIN 放大器IC与RF模块 射频/微波放大器

MSA-0436-BLKG 规格参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete包装说明：SL,4LEAD,.1"SQ
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：5.07
Is Samacsys：N其他特性：HIGH RELIABILITY
特性阻抗：50 Ω构造：COMPONENT
增益：7.5 dB最大输入功率 (CW)：13 dBm
JESD-609代码：e3安装特点：SURFACE MOUNT
功能数量：1端子数量：4
最大工作频率：3800 MHz最小工作频率：
封装主体材料：CERAMIC封装等效代码：SL,4LEAD,.1"SQ
电源：5.25 V射频/微波设备类型：WIDE BAND LOW POWER
子类别：RF/Microwave Amplifiers最大压摆率：70 mA
表面贴装：YES技术：BIPOLAR
端子面层：Matte Tin (Sn)最大电压驻波比：1.9
Base Number Matches：1

MSA-0436-BLKG 数据手册

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MSA-0436  
Cascadable Silicon Bipolar MMIC Amplifiers  
Data Sheet  
Description  
Features  
The MSA-0436 is a high performance silicon bipolar  
MonolithicMicrowaveIntegratedCircuit(MMIC)housed  
in a cost effective, microstrip package. This MMIC is  
designed for use as a general purpose 50Ω gain block.  
Typical applications include narrow and broad band IF  
and RF amplifiers in industrial and military applications.  
•
•
•
•
•
•
Cascadable 50Ω Gain Block  
3 dB Bandwidth: DC to 3.8 GHz  
12.5 dBm Typical P1 dB at 1.0 GHz  
8.5 dB Typical Gain at 1.0 GHz  
Unconditionally Stable (k>1)  
Cost Effective Ceramic Microstrip Package  
The MSA-series is fabricated using Avago’s 10 GHz f ,  
T
25 GHz f  
, silicon bipolar MMIC process which uses  
MAX  
nitride self-alignment, ion implantation, and gold met-  
allization to achieve excellent performance, unifor-  
mity and reliability. The use of an external bias resistor  
for temperature and current stability also allows bias  
flexibility.  
36 micro-X Package  
Typical Biasing Configuration  
R
bias  
VCC > 7 V  
RFC (Optional)  
4
C
C
block  
block  
3
IN  
MSA  
OUT  
1
V
= 5.25 V  
d
2
2
MSA-0436 Absolute Maximum Ratings  
Parameter  
Thermal Resistance[2,5]  
θjc = 140°C/W  
:
Absolute Maximum[1]  
Device Current  
Power Dissipation[2,3]  
100 mA  
650 mW  
RF Input Power  
+13 dBm  
Junction Temperature  
Storage Temperature[4]  
150°C  
–65 to 150°C  
Notes:  
1. Permanent damage may occur if any of these limits are exceeded.  
2. TCASE = 25°C.  
3. Derate at 7.1 mW/°C for TC > 109°C.  
4. Storage above +150°C may tarnish the leads of this package making it  
difficult to solder into a circuit.  
5. The small spot size of this technique results in a higher, though more  
accurate determination of qjc than do alternate methods.  
Electrical Specifications[1], TA = 25°C  
Symbol  
Parameters and Test Conditions: Id = 50 mA, ZO = 50 Ω  
Units Min. Typ. Max.  
GP  
Power Gain (|S21|2)  
f = 0.1 GHz  
dB  
dB  
7.5  
8.5  
0.6  
9.5  
1.0  
∆GP  
f3 dB  
Gain Flatness  
f = 0.1 to 2.5 GHz  
3 dB Bandwidth  
GHz  
3.8  
Input VSWR  
f = 0.1 to 2.5 GHz  
f = 0.1 to 2.5 GHz  
f = 1.0 GHz  
1.4:1  
1.9:1  
6.5  
VSWR  
Output VSWR  
NF  
50 Ω Noise Figure  
dB  
dBm  
dBm  
psec  
V
P1 dB  
IP3  
Output Power at 1 dB Gain Compression  
Third Order Intercept Point  
Group Delay  
f = 1.0 GHz  
12.5  
25.5  
125  
5.25  
–8.0  
f = 1.0 GHz  
tD  
f = 1.0 GHz  
Vd  
Device Voltage  
4.75  
5.75  
dV/dT  
Device Voltage Temperature Coefficient  
mV/°C  
Note:  
1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current  
is on the following page.  
Ordering Information  
Part Numbers  
MSA-0436-BLKG  
MSA-0436-TR1G  
No. of Devices  
Comments  
Bulk  
100  
1000  
7" Reel  
3
MSA-0436 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 50 mA)  
S11  
S21  
S12  
S22  
Freq.  
GHz  
Mag  
Ang  
dB  
Mag  
Ang  
dB  
Mag  
Ang  
Mag  
Ang  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
.08  
.08  
.07  
.07  
.05  
.05  
.04  
.09  
.14  
.22  
.28  
.34  
.37  
.42  
175  
172  
171  
166  
169  
8.5  
8.5  
8.5  
8.5  
8.4  
8.3  
8.1  
7.8  
7.3  
6.6  
5.8  
4.8  
3.9  
3.0  
2.67  
2.68  
2.67  
2.66  
2.64  
2.61  
2.55  
2.46  
2.33  
2.14  
1.94  
1.74  
1.57  
1.41  
175  
170  
161  
151  
142  
136  
109  
87  
71  
50  
32  
15  
–1  
–16  
–16.4  
–16.3  
–16.4  
–16.2  
–16.1  
–16.0  
–15.0  
–14.2  
–13.1  
–12.5  
–11.7  
–11.3  
–10.7  
–10.4  
.151  
.153  
.151  
.155  
.156  
.159  
.178  
.196  
.221  
.238  
.260  
.271  
.291  
.302  
1
2
3
6
8
10  
13  
15  
18  
14  
9
4
–2  
–8  
.20  
.20  
.20  
.21  
.22  
.24  
.26  
.28  
.31  
.33  
.35  
.34  
.33  
.32  
–10  
–16  
–33  
–45  
–57  
–68  
–96  
–123  
–140  
–160  
–173  
–179  
–171  
–160  
175  
–142  
–145  
–154  
–175  
170  
156  
140  
120  
Typical Performance, TA = 25°C  
(unless otherwise noted)  
80  
60  
12  
9
8
7
6
5
T
T
T
= +125°C  
= +25°C  
= –55°C  
C
C
C
10  
8
Gain Flat to DC  
6
4
40  
20  
0
0.1 GHz  
1.0 GHz  
2.0 GHz  
2
0
4
0.1  
0.3 0.5  
1.0  
3.0 6.0  
1
2
3
4
5
6
7
20  
30  
40  
50  
(mA)  
60  
70  
FREQUENCY (GHz)  
V
(V)  
I
d
d
Figure 1. Typical Power Gain vs.  
Frequency, TA = 25°C, Id = 50 mA.  
Figure 2. Device Current vs. Voltage.  
Figure 3. Power Gain vs. Current.  
21  
18  
7.5  
7.0  
13  
12  
11  
10  
9
P
1 dB  
I
= 70 mA  
d
15  
12  
9
6.5  
6.0  
I
I
= 50 mA  
= 30 mA  
d
d
8
7
6
8
G
P
7
I
I
I
= 30 mA  
= 50 mA  
= 70 mA  
d
d
d
6
NF  
6
5
3
0.1  
5
5.5  
0.2 0.3 0.5  
1.0  
2.0  
4.0  
4.0  
0.1  
0.2 0.3 0.5  
1.0  
2.0  
–55 –25  
+25  
+85  
+125  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
TEMPERATURE, (°C)  
Figure 5. Output Power at 1 dB Gain  
Compression vs. Frequency.  
Figure 6. Noise Figure vs. Frequency.  
Figure 4. Output Power at 1 dB Gain  
Compression, NF and Power Gain vs.  
Case Temperature, f = 1.0 GHz,  
Id = 50 mA.  
36 micro-X Package Dimensions  
2.15  
(0.085)  
SOURCE  
4
2.11 (0.083) DIA.  
DRAIN  
3
1
GATE  
0.508  
(0.020)  
2
SOURCE  
1.45 0.25  
(0.057 0.010)  
2.54  
(0.100)  
0.15 0.05  
(0.006 0.002)  
0.56  
(0.022)  
4.57 0.25  
0.180 0.010  
Notes:  
1. Dimensions are in millimeters (inches)  
2. Tolerances: in .xxx = 0.005  
mm .xx = 0.13  
For product information and a complete list of distributors, please go to our web site: www.avagotech.com  
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.  
Data subject to change. Copyright © 2007 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2740EN  
AV02-0303EN - April 12, 2007  

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