MSA-0436-BLKG [AVAGO]

MSA-0436

Cascadable Silicon Bipolar MMIC Amplifiers

Data Sheet

Description

The MSA-0436 is a high performance silicon bipolar

Monolithic Microwave Integrated Circuit (MMIC) housed

in a cost effective, microstrip package. This MMIC is

designed for use as a general purpose 50Ω gain block.

Typical applications include narrow and broad band IF

and RF amplifiers in industrial and military applications.

The MSA-series is fabricated using Avago’s 10 GHz f

T

,

25 GHz f

MAX

, silicon bipolar MMIC process which uses

nitride self-alignment, ion implantation, and gold met-

allization to achieve excellent performance, unifor-

mity and reliability. The use of an external bias resistor

for temperature and current stability also allows bias

flexibility.

Features

•

Cascadable 50Ω Gain Block

•

3 dB Bandwidth: DC to 3.8 GHz

•

12.5 dBm Typical P

1 dB

at 1.0 GHz

•

8.5 dB Typical Gain at 1.0 GHz

•

Unconditionally Stable (k>1)

•

Cost Effective Ceramic Microstrip Package

36 micro-X Package

Typical Biasing Configuration

R

bias

V

CC

> 7 V

RFC (Optional)

4

C

block

3

IN

1

MSA

C

block

OUT

V

d

= 5.25 V

2

2

MSA-0436 Absolute Maximum Ratings

Parameter

Device Current

Power Dissipation

[2,3]

RF Input Power

Junction Temperature

Storage Temperature

[4]

Absolute Maximum

[1]

100 mA

650 mW

+13 dBm

150°C

–65 to 150°C

Thermal Resistance

[2,5]

:

θ

jc

= 140°C/W

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

CASE

= 25°C.

3. Derate at 7.1 mW/°C for T

C

> 109°C.

4. Storage above +150°C may tarnish the leads of this package making it

difficult to solder into a circuit.

5. The small spot size of this technique results in a higher, though more

accurate determination of q

jc

than do alternate methods.

Electrical Specifications

[1]

, T

A

= 25°C

Symbol

G

P

∆G

P

f

3 dB

VSWR

NF

P

1 dB

IP

3

t

D

V

d

dV/dT

Parameters and Test Conditions: I

d

= 50 mA, Z

O

= 50

Ω

Power Gain (|S

21

|

2

)

Gain Flatness

3 dB Bandwidth

Input VSWR

Output VSWR

50

Ω

Noise Figure

Output Power at 1 dB Gain Compression

Third Order Intercept Point

Group Delay

Device Voltage

Device Voltage Temperature Coefficient

f = 0.1 to 2.5 GHz

f = 0.1 to 2.5 GHz

f = 1.0 GHz

f = 1.0 GHz

f = 1.0 GHz

f = 1.0 GHz

f = 0.1 GHz

f = 0.1 to 2.5 GHz

Units

dB

dB

GHz

Min.

7.5

Typ.

8.5

±0.6

3.8

1.4:1

1.9:1

Max.

9.5

±1.0

dB

dBm

dBm

psec

V

mV/°C

4.75

6.5

12.5

25.5

125

5.25

–8.0

5.75

Note:

1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current

is on the following page.

Ordering Information

Part Numbers

MSA-0436-BLKG

MSA-0436-TR1G

No. of Devices

100

1000

Comments

Bulk

7" Reel

3

MSA-0436 Typical Scattering Parameters (Z

O

= 50

Ω,

T

A

= 25°C, I

d

= 50 mA)

Freq.

GHz

S

11

Mag

Ang

dB

S

21

Mag

Ang

dB

S

12

Mag

Ang

Mag

S

22

Ang

0.1

0.2

0.4

0.6

0.8

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

.08

.08

.07

.07

.05

.05

.04

.09

.14

.22

.28

.34

.37

.42

175

172

171

166

169

175

–142

–145

–154

–175

170

156

140

120

8.5

8.5

8.5

8.5

8.4

8.3

8.1

7.8

7.3

6.6

5.8

4.8

3.9

3.0

2.67

2.68

2.67

2.66

2.64

2.61

2.55

2.46

2.33

2.14

1.94

1.74

1.57

1.41

175

170

161

151

142

136

109

87

71

50

32

15

–1

–16

–16.4

–16.3

–16.4

–16.2

–16.1

–16.0

–15.0

–14.2

–13.1

–12.5

–11.7

–11.3

–10.7

–10.4

.151

.153

.151

.155

.156

.159

.178

.196

.221

.238

.260

.271

.291

.302

1

2

3

6

8

10

13

15

18

14

9

4

–2

–8

.20

.20

.20

.21

.22

.24

.26

.28

.31

.33

.35

.34

.33

.32

–10

–16

–33

–45

–57

–68

–96

–123

–140

–160

–173

–179

–171

–160

Typical Performance, T

A

= 25°C

(unless otherwise noted)

12

10

60

8

6

4

20

2

0

0

1

2

3

4

V

d

(V)

5

6

7

5

0.1 GHz

1.0 GHz

2.0 GHz

20

30

40

50

I

d

(mA)

60

70

G

p

(dB)

G

p

(dB)

I

d

(mA)

80

T

C

= +125°C

T

C

= +25°C

T

C

= –55°C

9

8

Gain Flat to DC

7

40

6

0.1

0.3 0.5

1.0

3.0

6.0

4

FREQUENCY (GHz)

Figure 1. Typical Power Gain vs.

Frequency, T

A

= 25°C, I

d

= 50 mA.

Figure 2. Device Current vs. Voltage.

Figure 3. Power Gain vs. Current.

13

P

1 dB

(dBm)

21

P

1 dB

P

1 dB

(dBm)

7.5

12

11

10

9

18

I

d

= 70 mA

15

12

9

NF (dB)

NF (dB)

7.0

I

d

= 50 mA

6.5

G

p

(dB)

8

7

6

5

–55

–25

+25

G

P

8

7

6

3

0.1

I

d

= 30 mA

6.0

NF

6

+85

5

+125

I

d

= 30 mA

I

d

= 50 mA

I

d

= 70 mA

0.1

0.2 0.3

0.5

1.0

2.0

4.0

5.5

0.2 0.3

0.5

1.0

2.0

4.0

FREQUENCY (GHz)

TEMPERATURE, (°C)

FREQUENCY (GHz)

Figure 4. Output Power at 1 dB Gain

Compression, NF and Power Gain vs.

Case Temperature, f = 1.0 GHz,

I

d

= 50 mA.

Figure 5. Output Power at 1 dB Gain

Compression vs. Frequency.

Figure 6. Noise Figure vs. Frequency.

36 micro-X Package Dimensions

2.15

(0.085)

SOURCE

4

DRAIN

GATE 1

3

0.508

(0.020)

2.11 (0.083) DIA.

SOURCE

1.45

±

0.25

(0.057

±

0.010)

2

2.54

(0.100)

0.15

±

0.05

(0.006

±

0.002)

0.56

(0.022)

4.57

±

0.25

0.180

±

0.010

Notes:

1. Dimensions are in millimeters (inches)

2. Tolerances: in .xxx =

±

0.005

mm .xx =

±

0.13

For product information and a complete list of distributors, please go to our web site:

www.avagotech.com

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.

Data subject to change. Copyright © 2007 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2740EN

AV02-0303EN - April 12, 2007