MSA-0436-BLKG [AVAGO]

0MHz - 3800MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, CERAMIC, 36 MICRO-X, 4 PIN;
MSA-0436-BLKG
元器件型号: MSA-0436-BLKG
生产厂家: AVAGO TECHNOLOGIES LIMITED    AVAGO TECHNOLOGIES LIMITED
描述和应用:

0MHz - 3800MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, CERAMIC, 36 MICRO-X, 4 PIN

放大器射频微波功率放大器
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型号参数:MSA-0436-BLKG参数
是否无铅不含铅
是否Rohs认证符合
生命周期Obsolete
IHS 制造商AVAGO TECHNOLOGIES INC
包装说明SL,4LEAD,.1"SQ
Reach Compliance Codecompliant
ECCN代码EAR99
HTS代码8542.33.00.01
风险等级5.07
Is SamacsysN
其他特性HIGH RELIABILITY
特性阻抗50 Ω
构造COMPONENT
增益7.5 dB
最大输入功率 (CW)13 dBm
JESD-609代码e3
安装特点SURFACE MOUNT
功能数量1
端子数量4
最大工作频率3800 MHz
最小工作频率
封装主体材料CERAMIC
封装等效代码SL,4LEAD,.1"SQ
电源5.25 V
射频/微波设备类型WIDE BAND LOW POWER
子类别RF/Microwave Amplifiers
最大压摆率70 mA
表面贴装YES
技术BIPOLAR
端子面层Matte Tin (Sn)
最大电压驻波比1.9
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
MSA-0436
Cascadable Silicon Bipolar MMIC Amplifiers
Data Sheet
Description
The MSA-0436 is a high performance silicon bipolar
Monolithic Microwave Integrated Circuit (MMIC) housed
in a cost effective, microstrip package. This MMIC is
designed for use as a general purpose 50Ω gain block.
Typical applications include narrow and broad band IF
and RF amplifiers in industrial and military applications.
The MSA-series is fabricated using Avago’s 10 GHz f
T
,
25 GHz f
MAX
, silicon bipolar MMIC process which uses
nitride self-alignment, ion implantation, and gold met-
allization to achieve excellent performance, unifor-
mity and reliability. The use of an external bias resistor
for temperature and current stability also allows bias
flexibility.
Features
Cascadable 50Ω Gain Block
3 dB Bandwidth: DC to 3.8 GHz
12.5 dBm Typical P
1 dB
at 1.0 GHz
8.5 dB Typical Gain at 1.0 GHz
Unconditionally Stable (k>1)
Cost Effective Ceramic Microstrip Package
36 micro-X Package
Typical Biasing Configuration
R
bias
V
CC
> 7 V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 5.25 V
2
2
MSA-0436 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
[4]
Absolute Maximum
[1]
100 mA
650 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance
[2,5]
:
θ
jc
= 140°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 7.1 mW/°C for T
C
> 109°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of q
jc
than do alternate methods.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 50 mA, Z
O
= 50
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 0.1 GHz
f = 0.1 to 2.5 GHz
Units
dB
dB
GHz
Min.
7.5
Typ.
8.5
±0.6
3.8
1.4:1
1.9:1
Max.
9.5
±1.0
dB
dBm
dBm
psec
V
mV/°C
4.75
6.5
12.5
25.5
125
5.25
–8.0
5.75
Note:
1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current
is on the following page.
Ordering Information
Part Numbers
MSA-0436-BLKG
MSA-0436-TR1G
No. of Devices
100
1000
Comments
Bulk
7" Reel
3
MSA-0436 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 50 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.08
.08
.07
.07
.05
.05
.04
.09
.14
.22
.28
.34
.37
.42
175
172
171
166
169
175
–142
–145
–154
–175
170
156
140
120
8.5
8.5
8.5
8.5
8.4
8.3
8.1
7.8
7.3
6.6
5.8
4.8
3.9
3.0
2.67
2.68
2.67
2.66
2.64
2.61
2.55
2.46
2.33
2.14
1.94
1.74
1.57
1.41
175
170
161
151
142
136
109
87
71
50
32
15
–1
–16
–16.4
–16.3
–16.4
–16.2
–16.1
–16.0
–15.0
–14.2
–13.1
–12.5
–11.7
–11.3
–10.7
–10.4
.151
.153
.151
.155
.156
.159
.178
.196
.221
.238
.260
.271
.291
.302
1
2
3
6
8
10
13
15
18
14
9
4
–2
–8
.20
.20
.20
.21
.22
.24
.26
.28
.31
.33
.35
.34
.33
.32
–10
–16
–33
–45
–57
–68
–96
–123
–140
–160
–173
–179
–171
–160
Typical Performance, T
A
= 25°C
(unless otherwise noted)
12
10
60
8
6
4
20
2
0
0
1
2
3
4
V
d
(V)
5
6
7
5
0.1 GHz
1.0 GHz
2.0 GHz
20
30
40
50
I
d
(mA)
60
70
G
p
(dB)
G
p
(dB)
I
d
(mA)
80
T
C
= +125°C
T
C
= +25°C
T
C
= –55°C
9
8
Gain Flat to DC
7
40
6
0.1
0.3 0.5
1.0
3.0
6.0
4
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C, I
d
= 50 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
13
P
1 dB
(dBm)
21
P
1 dB
P
1 dB
(dBm)
7.5
12
11
10
9
18
I
d
= 70 mA
15
12
9
NF (dB)
NF (dB)
7.0
I
d
= 50 mA
6.5
G
p
(dB)
8
7
6
5
–55
–25
+25
G
P
8
7
6
3
0.1
I
d
= 30 mA
6.0
NF
6
+85
5
+125
I
d
= 30 mA
I
d
= 50 mA
I
d
= 70 mA
0.1
0.2 0.3
0.5
1.0
2.0
4.0
5.5
0.2 0.3
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
TEMPERATURE, (°C)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
= 50 mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
36 micro-X Package Dimensions
2.15
(0.085)
SOURCE
4
DRAIN
GATE 1
3
0.508
(0.020)
2.11 (0.083) DIA.
SOURCE
1.45
±
0.25
(0.057
±
0.010)
2
2.54
(0.100)
0.15
±
0.05
(0.006
±
0.002)
0.56
(0.022)
4.57
±
0.25
0.180
±
0.010
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx =
±
0.005
mm .xx =
±
0.13
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2007 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2740EN
AV02-0303EN - April 12, 2007
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