MSA-0886-TR2 [AVAGO]

0MHz - 1000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, LEAD FREE, 4 PIN;
MSA-0886-TR2
元器件型号: MSA-0886-TR2
生产厂家: AVAGO TECHNOLOGIES LIMITED    AVAGO TECHNOLOGIES LIMITED
描述和应用:

0MHz - 1000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, LEAD FREE, 4 PIN

放大器射频微波功率放大器
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型号参数:MSA-0886-TR2参数
是否无铅含铅
是否Rohs认证不符合
生命周期Obsolete
IHS 制造商AVAGO TECHNOLOGIES INC
包装说明SL,4GW-LD,.085CIR
Reach Compliance Codecompliant
ECCN代码5A991.G
HTS代码8542.33.00.01
风险等级5.05
Is SamacsysN
特性阻抗50 Ω
构造COMPONENT
增益20.5 dB
最大输入功率 (CW)13 dBm
JESD-609代码e0
安装特点SURFACE MOUNT
功能数量1
端子数量4
最大工作频率1000 MHz
最小工作频率
封装主体材料PLASTIC/EPOXY
封装等效代码SL,4GW-LD,.085CIR
电源7.8 V
射频/微波设备类型WIDE BAND LOW POWER
子类别RF/Microwave Amplifiers
最大压摆率40 mA
表面贴装YES
技术BIPOLAR
端子面层Tin/Lead (Sn/Pb)
最大电压驻波比1.9
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
MSA-0886
Cascadable Silicon Bipolar
MMIC Amplifier
Data Sheet
Description
The MSA-0886 is a high performance silicon bipolar
Monolithic Microwave Integrated Circuit (MMIC) housed
in a low cost, surface mount plastic package. This MMIC
is designed for use as a general purpose 50
gain block
above 0.5 GHz and can be used as a high gain transistor
below this frequency. Typical applications include narrow
and moderate band IF and RF amplifiers in commercial
and industrial applications.
The MSA-series is fabricated using Avago’s 10 GHz f
T
, 25
GHz f
MAX
, silicon bipolar MMIC process which uses nitride
self-alignment, ion implantation, and gold metallization to
achieve excellent performance, uniformity and reliability.
The use of an external bias resistor for temperature and
current stability also allows bias flexibility.
Features
Lead-free Option Available
Usable Gain to 5.5 GHz
High Gain:
32.5 dB Typical at 0.1 GHz
22.5 dB Typical at 1.0 GHz
Low Noise Figure:
3.3 dB Typical at 1.0 GHz
Surface Mount Plastic Package
Tape-and-Reel Packaging Option Available
Lead-free Option Available
86 Plastic Package
Typical Biasing Configuration
R
bias
V
CC
10 V
RFC (Optional)
4
C
block
IN
1
MSA
2
3
V
d
= 7.8 V
C
block
OUT
MSA-0886 Absolute Maximum Ratings
Parameter
Drain Current
Power Dissipation
[2, 3]
RF Input Power
Junction Temperature
Storage Temperature
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25° C.
3. Derate at 7.1 mW/°C for T
C
> 80° C.
Absolute Maximum
[1]
65 mA
500 mW
+13 dBm
150° C
-65° C to 150° C
Thermal Resistance
(2)
jc
= 140°C/W
Electrical Specifications
[1]
, T
A
= 25° C
Symbol
GP
VSWR
NF
P
1dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 36 mA, Z
O
= 50
Power Gain (|S
21
|
2
)
Input VSWR
Output VSWR
50
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 GHz
f = 1.0 GHz
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
Units
dB
Min.
20.5
Typ.
32.5
22.5
2.1:1
1.9:1
Max.
dB
dBm
dBm
psec
V
mV/°C
6.2
3.3
12.5
27.0
140
7.8
-17.0
9.4
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current is on the following page.
Ordering Information
Part Numbers
MSA-0886-BLK
MSA-0886-BLKG
MSA-0886-TR1
MSA-0886-TR1G
MSA-0886-TR2
MSA-0886-TR2G
No. of Devices
100
100
1000
1000
4000
4000
Comments
Bulk
Bulk
7" Reel
7" Reel
13" Reel
13" Reel
Note: Order part number with a “G” suffix if lead-free option is desired.
2
MSA-0886 Typical Scattering Parameters
[1]
(Z
O
= 50
,
T
A
= 25° C, I
d
= 36 mA)
Freq.
GHz
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
S
11
Mag
0.63
0.56
0.43
0.35
0.30
0.27
0.27
0.31
0.35
0.40
0.45
0.51
0.61
0.68
S
21
Ang
-22
-41
-69
-88
-104
-116
-144
-166
178
162
149
137
116
100
S
12
Mag
42.12
36.68
26.94
20.89
16.21
13.20
9.15
6.84
5.50
4.41
3.72
3.14
2.31
1.69
S
22
Mag
0.015
0.020
0.035
0.045
0.054
0.062
0.083
0.105
0.128
0.135
0.145
0.157
0.164
0.173
dB
32.5
31.3
28.6
26.4
24.2
22.4
19.2
16.7
14.8
12.9
11.4
9.9
7.3
4.6
Ang
160
143
119
104
93
83
65
49
38
25
13
1
-22
-42
dB
-36.7
-33.9
-29.1
-27.0
-25.3
-24.2
-21.6
-19.5
-17.9
-17.4
-16.8
-16.1
-15.7
-15.2
Ang
54
50
52
49
50
49
46
41
36
30
25
19
10
4
Mag
0.62
0.55
0.43
0.34
0.29
0.26
0.23
0.22
0.21
0.20
0.19
0.18
0.17
0.23
Ang
-24
-46
-79
-103
-124
-139
-172
163
149
132
124
121
130
143
k
0.68
0.64
0.69
0.77
0.83
0.87
0.93
0.96
0.96
1.01
1.02
1.01
1.00
0.95
3
Typical Performance, T
A
= 25° C
(unless otherwise noted)
35
30
25
G
p
(dB)
20
15
10
5
Gain Flat to DC
0
0.1
0.3 0.5
1.0
FREQUENCY (GHz)
3.0
6.0
0
0
2
4
V
d
(V)
Figure 2. Device Current vs. Voltage.
6
8
10
I
d
= 20 mA
10
30
I
d
= 36 mA
I
d
(mA)
20
40
T
C
= +85° C
T
C
= +25° C
T
C
= –25° C
Figure 1. Typical Power Gain vs Frequency, I
d
= 36 mA.
23
Gp (dB)
22
21
GP
P
1 dB
(dBm)
P
1 dB
(dBm)
13
P1 dB
12
11
4
NF (dB)
3
2
-25
0
+25
+55
+85
TEMPERATURE (C)
NF
16
I
d
= 40 mA
14
12
10
8
6
4
0.1
I
d
= 20 mA
0.2
0.3
0.5
1.0
FREQUENCY (GHz)
2.0
4.0
I
d
= 36 mA
Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz, I
d
= 36 mA.
4.5
I
d
= 20 mA
I
d
= 36 mA
I
d
= 40 mA
Figure 4. Output Power at 1 dB Gain Compression vs. Frequency.
4.0
NF (dB)
3.5
3.0
2.5
0.1
0.2
0.3
0.5
1.0
FREQUENCY (GHz)
2.0
Figure 5. Noise Figure vs. Frequency.
4
86 Plastic Package Dimensions
0.51 ±0.13
(0.020 ±0.005)
GROUND
4
RF OUTPUT
AND DC BIAS
1
A08
45°
RF INPUT
C
L
3
2.34 ±0.38
(0.092 ±0.015)
2
GROUND
1.52 ±0.25
(0.060 ±0.010)
2.67 ±0.38
(0.105 ±0.15)
5° TYP.
0.203 ±0.051
(0.006 ±0.002)
0.66 ±0.13
(0.026 ±0.005)
0.30 MIN
(0.012 MIN)
2.16 ±0.13
(0.085 ±0.005)
8° MAX
0° MIN
Dimensions are in millimeters (inches)
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-2744EN
AV02-3580EN - June 11, 2012
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