OPT209 [BB]
PHOTODIODE WITH ON-CHIP AMPLIFIER; 光电二极管，带有片上放大器
| 型号： | OPT209 |
| 厂家： | 
BURR-BROWN CORPORATION |
| 描述： | PHOTODIODE WITH ON-CHIP AMPLIFIER |
| 文件： | 总11页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
OPT209
PHOTODIODE
WITH ON-CHIP AMPLIFIER
FEATURES
DESCRIPTION
● PHOTODIODE SIZE: 0.090 x 0.090 inch
The OPT209 is an opto-electronic integrated circuit
containing a photodiode and transimpedance
amplifier on a single dielectrically isolated chip. The
transimpedance amplifier consists of a precision FET-
input op amp and an on-chip metal film resistor. The
0.09 x 0.09 inch photodiode is operated at zero bias for
excellent linearity and low dark current.
(2.29 x 2.29mm)
● 1MΩ FEEDBACK RESISTOR
● HIGH RESPONSIVITY: 0.45A/W (650nm)
● LOW DARK ERRORS: 2mV
● BANDWIDTH: 16kHz
● WIDE SUPPLY RANGE: ±2.25 to ±18V
● LOW QUIESCENT CURRENT: 400µA
● TRANSPARENT 8-PIN DIP
The integrated combination of photodiode and
transimpedance amplifier on a single chip eliminates
the problems commonly encountered in discrete de-
signs such as leakage current errors, noise pick-up and
gain peaking due to stray capacitance.
APPLICATIONS
The OPT209 operates over a wide supply range (±2.25
to ±18V) and supply current is only 400µA. It is
packaged in a transparent plastic 8-pin DIP, specified
for the 0°C to 70°C temperature range.
● MEDICAL INSTRUMENTATION
● LABORATORY INSTRUMENTATION
● POSITION AND PROXIMITY SENSORS
● PHOTOGRAPHIC ANALYZERS
● SMOKE DETECTORS
SPECTRAL RESPONSIVITY
Ultraviolet
Infrared
2
0.5
0.4
0.3
0.2
0.1
0
0.5
0.4
0.3
0.2
0.1
0
1MΩ
4
Using Internal
1MΩ Resistor
10pF
175Ω
5
VO
λ
OPT209
8
1
3
100 200 300 400 500 600 700 800 900 1000 1100
V+
V–
Wavelength (nm)
International Airport Industrial Park
•
Mailing Address: PO Box 11400, Tucson, AZ 85734
FAXLine: (800) 548-6133 (US/Canada Only)
• Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/
•
•
Cable: BBRCORP
•
Telex: 066-6491
•
FAX: (520) 889-1510
•
Immediate Product Info: (800) 548-6132
©1994 Burr-Brown Corporation
PDS-1232D
Printed in U.S.A. March, 1997
SPECIFICATIONS
ELECTRICAL
At TA = +25°C, VS = ±15V, λ = 650nm, internal 1MΩ feedback resistor, unless otherwise noted.
OPT209P
TYP
PARAMETER
CONDITIONS
MIN
MAX
UNITS
RESPONSIVITY
Photodiode Current
Voltage Output
vs Temperature
Unit-to-Unit Variation
Nonlinearity(1)
650nm
650nm
0.45
0.45
100
±5
0.01
0.008
5.2
A/W
V/µW
ppm/°C
%
% of FS
in2
mm2
650nm
FS Output = 10V
(0.090 x 0.090in)
(2.29 x 2.29mm)
Photodiode Area
DARK ERRORS, RTO(2)
Offset Voltage, Output
vs Temperature
±0.5
±10
10
±2
mV
µV/°C
µV/V
vs Power Supply
V
S = ±2.25V to ±18V
100
Voltage Noise
Measured BW = 0.1 to 100kHz
350
µVrms
RESISTOR—1MΩ Internal
Resistance
Tolerance
1
±0.5
50
MΩ
%
ppm/°C
±2
vs Temperature
FREQUENCY RESPONSE
Bandwidth, Large or Small-Signal, –3dB
Rise Time, 10% to 90%
Settling Time, 1%
16
22
60
85
100
44
kHz
µs
µs
µs
µs
µs
µs
µs
FS to Dark
FS to Dark
FS to Dark
0.1%
0.01%
Overload Recovery Time (to 1%)
100% 0verdrive, VS = ±15V
100% 0verdrive, VS = ±5V
100% 0verdrive, VS = ±2.25V
100
240
OUTPUT
Voltage Output
R
R
L = 10kΩ
L = 5kΩ
(V+) – 1.25
(V+) – 2
(V+) – 1
(V+) – 1.5
1
V
V
nF
mA
Capacitive Load, Stable Operation
Short-Circuit Current
±18
POWER SUPPLY
Specified Operating Voltage
Operating Voltage Range
Quiescent Current
±15
V
V
µA
±2.25
±18
±500
VO = 0
±400
TEMPERATURE RANGE
Specification, Operating
Storage
0
–25
+70
+85
°C
°C
Thermal Resistance, θJA
100
°C/W
NOTES: (1) Deviation in percent of full scale from best-fit straight line. (2) Referred to Output. Includes all error sources.
PHOTODIODE SPECIFICATIONS
At TA = +25°C, unless otherwise noted.
Photodiode of OPT209
TYP
PARAMETER
CONDITIONS
MIN
MAX
UNITS
Photodiode Area
(0.090 x 0.090in)
(2.29 x 2.29mm)
650nm
0.008
5.1
0.45
in2
mm2
A/W
fA
Current Responsivity
Dark Current
vs Temperature
Capacitance
VD = 0V(1)
500
doubles every 10°C
600
VD = 0V(1)
pF
NOTE: (1) Voltage Across Photodiode.
®
2
OPT209
SPECIFICATIONS (CONT)
ELECTRICAL
Op Amp Section of OPT209(1)
At TA = +25°C, VS = ±15V, unless otherwise noted.
OPT209 Op Amp
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
INPUT
Offset Voltage
vs Temperature
vs Power Supply
Input Bias Current
vs Temperature
±0.5
±5
10
1
mV
µV/°C
µV/V
pA
VS = ±2.25V to ±18V
doubles every 10°C
NOISE
Input Voltage Noise
Voltage Noise Density, f=10Hz
f=100Hz
30
25
15
0.8
nV/√Hz
nV/√Hz
nV/√Hz
fA/√Hz
f=1kHz
Current Noise Density, f=1kHz
INPUT VOLTAGE RANGE
Common-Mode Input Range
Common-Mode Rejection
±14.4
106
V
dB
INPUT IMPEDANCE
Differential
Common-Mode
1012||3
1012||3
Ω||pF
Ω||pF
OPEN-LOOP GAIN
Open-Loop Voltage Gain
120
dB
FREQUENCY RESPONSE
Gain-Bandwidth Product
Slew Rate
Settling Time 0.1%
0.01%
4
6
4
5
MHz
V/µs
µs
µs
OUTPUT
Voltage Output
RL = 10kΩ
RL = 5kΩ
(V+) – 1.25
(V+) – 2
(V+) – 1
(V+) – 1.5
±18
V
V
mA
Short-Circuit Current
POWER SUPPLY
Specified Operating Voltage
Operating Voltage Range
Quiescent Current
±15
V
V
µA
±2.25
±18
±500
I
O = 0
±400
NOTE: (1) Op amp specifications provided for information and comparison only.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
®
3
OPT209
PIN CONFIGURATION
ELECTROSTATIC
DISCHARGE SENSITIVITY
TOP VIEW
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with ap-
propriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
V+
1
2
3
4
8
7
6
5
Common
NC
–In
V–
(1)
NC
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
1MΩ Feedback
Output
NOTE: (1) Photodiode location.
MOISTURE SENSITIVITY
AND SOLDERING
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ................................................................................... ±18V
Input Voltage Range (Common Pin) .................................................... ±VS
Output Short-Circuit (to ground) ............................................... Continuous
Operating Temperature ..................................................... –25°C to +85°C
Storage Temperature ........................................................ –25°C to +85°C
Junction Temperature ...................................................................... +85°C
Lead Temperature (soldering, 10s) ................................................ +300°C
(Vapor-Phase Soldering Not Recommended)
Clear plastic does not contain the structural-enhancing fillers
used in black plastic molding compound. As a result, clear
plastic is more sensitive to environmental stress than black
plastic. This can cause difficulties if devices have been stored
in high humidity prior to soldering. The rapid heating during
soldering can stress wire bonds and cause failures. Prior to
soldering, it is recommended that devices be baked-out at
85°C for 24 hours.
PACKAGE INFORMATION
PACKAGE DRAWING
The fire-retardant fillers used in black plastic are not compat-
ible with clear molding compound. The OPT209 cannot meet
flammability test, UL-94.
PRODUCT
PACKAGE
NUMBER(1)
OPT209P
OPT209P-J
8-Pin DIP
8-Lead Surface Mount(2)
006-1
006-4
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book. (2) 8-Pin DIP with leads
formed for surface mounting.
®
4
OPT209
TYPICAL PERFORMANCE CURVES
At TA = +25°C, VS = ±15V, λ = 650nm, unless otherwise noted.
NORMALIZED SPECTRAL RESPONSIVITY
1.0
VOLTAGE RESPONSIVITY vs RADIANT POWER
10
1
(0.48A/W)
0.8
650nm
(0.45A/W)
0.6
0.1
0.01
0.4
0.2
λ = 650nm
0.001
0.01
0
100 200 300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
0.1
1
10
100
1k
Radiant Power (µW)
VOLTAGE RESPONSIVITY vs IRRADIANCE
VOLTAGE OUTPUT RESPONSIVITY vs FREQUENCY
10
1
10
1
RF = 10MΩ
λ = 650nm
RF = 3.3MΩ
RF = 1MΩ
RF = 100kΩ, CEXT = 9pF
0.1
0.1
0.01
0.001
0.01
0.001
λ = 650nm
RF = 33kΩ CEXT = 25pF
0.001
0.01
0.1
1
10
100
100
1k
10k
100k
1M
10M
Irradiance (W/m2)
Frequency (Hz)
RESPONSE vs INCIDENT ANGLE
DISTRIBUTION OF RESPONSIVITY
1.0
0.8
0.6
0.4
0.2
0
1.0
60
50
40
30
20
10
0
θX
0.8
0.6
0.4
0.2
0
λ = 650nm
θY
Distribution Totals
θX
θY
100%
Laboratory Test
Data
0
±20
±40
Incident Angle (°)
±60
±80
0.43
0.44
0.45
0.46
0.47
0.48
Responsivity (A/W)
®
5
OPT209
TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25°C, VS = ±15V, λ = 650nm, unless otherwise noted.
OUTPUT NOISE VOLTAGE
QUIESCENT CURRENT vs TEMPERATURE
vs MEASUREMENT BANDWIDTH
0.6
0.5
0.4
0.3
0.2
0.1
0
1000
100
10
Dotted lines show
noise beyond the
signal bandwidth.
VS = ±15V
RF = 10MΩ
RF = 100MΩ
RF = 100kΩ
VS = ±2.25V
Dice
100
RF = 1MΩ
1
0.1
–75
–50
–25
0
25
50
75
125
1
10
100
1k
Frequency (Hz)
10k
100k
1M
Temperature (°C)
LARGE-SIGNAL RESPONSE
SMALL-SIGNAL RESPONSE
50µs/div
50µs/div
NOISE EFFECTIVE POWER
vs MEASUREMENT BANDWIDTH
10–8
10–9
Dotted lines show
noise beyond the
signal bandwidth.
RF = 100kΩ
10–10
10–11
10–12
10–13
RF = 10MΩ
RF = 1MΩ
RF = 100MΩ
10–14
1
10
100
1k
10k
100k
1M
Frequency (Hz)
®
6
OPT209
metal, and differential stages are cross-coupled. Furthermore,
the photodiode area is very large relative to the op amp input
circuitry making these effects negligible.
APPLICATIONS INFORMATION
Figure 1 shows the basic connections required to operate the
OPT209. Applications with high-impedance power supplies
may require decoupling capacitors located close to the
device pins as shown. Output is zero volts with no light and
increases with increasing illumination.
If your light source is focused to a small area, be sure that
it is properly aimed to fall on the photodiode. If a narrowly
focused light source were to miss the photodiode area and
fall only on the op amp circuitry, the OPT209 would not
perform properly. The large (0.090 x 0.090 inch) photodiode
area allows easy positioning of narrowly focused light sources.
The photodiode area is easily visible—it appears very dark
compared to the surrounding active circuitry.
2
1MΩ RF
4
ID
(0V)
10pF
The incident angle of the light source also affects the
apparent sensitivity in uniform irradiance. For small incident
angles, the loss in sensitivity is simply due to the smaller
effective light gathering area of the photodiode (proportional
to the cosine of the angle). At a greater incident angle, light
is diffused by the side of the package. These effects are
shown in the typical performance curve “Response vs Incident
Angle.”
ID is proportional
to light intensity
(radiant power).
175Ω
ID
5
VO
λ
VO = ID RF
OPT209
8
1
3
0.1µF 0.1µF
+15V
–15V
For RF > 1MΩ
2
FIGURE 1. Basic Circuit Connections.
1MΩ
RF = REXT + 1MΩ
4
5
Photodiode current, ID, is proportional to the radiant power
or flux (in watts) falling on the photodiode. At a wavelength
of 650nm (visible red) the photodiode Responsivity, RI, is
approximately 0.45A/W. Responsivity at other wavelengths
is shown in the typical performance curve “Responsivity vs
Wavelength.”
REXT
175Ω
λ
V
O = ID RF
OPT209
The typical performance curve “Output Voltage vs Radiant
Power” shows the response throughout a wide range of
radiant power. The response curve “Output Voltage vs
Irradiance” is based on the photodiode area of 5.23 x 10–6m2.
V+
V–
CEXT
The OPT209’s voltage output is the product of the photodiode
current times the feedback resistor, (IDRF). The internal
feedback resistor is laser trimmed to 1MΩ ±2%. Using this
resistor, the output voltage responsivity, RV, is approximately
0.45V/µW at 650nm wavelength.
RF = REXT || 1MΩ
1MΩ
REXT
For RF < 1MΩ
2
4
5
3pF
An external resistor can be connected to set a different
voltage responsivity. Best dynamic performance is achieved
by connecting REXT in series (for RF > 1MΩ), or in parallel
(for RF < 1MΩ), with the internal resistor as shown in
Figure 2. These connections take advantage of on-chip
capacitive guarding of the internal resistor, which improves
dynamic performance. For values of RF less than 1MΩ, an
external capacitor, CEXT, should be connected in parallel
with RF (see Figure 2). This capacitor eliminates gain
peaking and prevents instability. The value of CEXT can be
read from the table in Figure 2.
175Ω
λ
V
O = ID RF
OPT209
8
1
V+
3
V–
EQUIVALENT RF
CEXT
(1)
(1)
(1)
100MΩ
10MΩ
1MΩ
330kΩ
100kΩ
33kΩ
(1)pF
9pF
25pF
(2)
LIGHT SOURCE POSITIONING
≤20kΩ
The OPT209 is 100% tested with a light source that uniformly
illuminates the full area of the integrated circuit, including
the op amp. Although all IC amplifiers are light-sensitive to
some degree, the OPT209 op amp circuitry is designed to
minimize this effect. Sensitive junctions are shielded with
NOTES: (1) No CEXT required. (2)
Not recommended due to possible
op amp instability.
FIGURE 2. Using External Feedback Resistor.
®
7
OPT209
DARK ERRORS
simple R/C circuit with a –3dB cutoff frequency of 16kHz.
This yields a rise time of approximately 22µs (10% to 90%).
Dynamic response is not limited by op amp slew rate. This
is demonstrated by the dynamic response oscilloscope
photographs showing virtually identical large-signal and
small-signal response.
The dark errors in the specification table include all sources.
The dominant error source is the input offset voltage of the
op amp. Photodiode dark current and input bias current of
the op amp are in the 2pA range and contribute virtually no
offset error at room temperature. Dark current and input bias
current double for each 10°C above 25°C. At 70°C, the error
current can be approximately 100pA. This would produce a
1mV offset with RF = 10MΩ. The OPT209 is useful with
feedback resistors of 100MΩ or greater at room temperature.
The dark output voltage can be trimmed to zero with the
optional circuit shown in Figure 3.
Dynamic response will vary with feedback resistor value as
shown in the typical performance curve “Voltage Output
Responsivity vs Frequency.” Rise time (10% to 90%) will
vary according to the –3dB bandwidth produced by a given
feedback resistor value—
0. 35
f C
t R
≈
(1)
When used with very large feedback resistors, tiny leakage
currents on the circuit board can degrade the performance of
the OPT209. Careful circuit board design and clean assembly
procedures will help achieve best performance. A “guard
ring” on the circuit board can help minimize leakage to the
critical non-inverting input (pin 2). This guard ring should
encircle pin 2 and connect to Common, pin 8.
where:
tR is the rise time (10% to 90%)
fC is the –3dB bandwidth
NOISE PERFORMANCE
Noise performance of the OPT209 is determined by the op
amp characteristics in conjunction with the feedback
components and photodiode capacitance. The typical
performance curve “Output Noise Voltage vs Measurement
Bandwidth” shows how the noise varies with RF and measured
bandwidth (1Hz to the indicated frequency). The signal
bandwidth of the OPT209 is indicated on the curves. Noise
can be reduced by filtering the output with a cutoff frequency
equal to the signal bandwidth.
2
1MΩ
4
10pF
V+
175Ω
5
VO
λ
Output noise increases in proportion to the square-root of the
feedback resistance, while responsivity increases linearly
with feedback resistance. So best signal-to-noise ratio is
achieved with large feedback resistance. This comes with
the trade-off of decreased bandwidth.
100µA
1/2 REF200
OPT209
8
1
3
V+
V–
100Ω
100Ω
500Ω
0.01µF
The noise performance of a photodetector is sometimes
characterized by Noise Effective Power (NEP). This is the
radiant power which would produce an output signal equal
to the noise level. NEP has the units of radiant power
(watts). The typical performance curve “Noise Effective
Power vs Measurement Bandwidth” shows how NEP varies
with RF and measurement bandwidth.
100µA
1/2 REF200
Adjust dark output for 0V.
Trim Range: ±7mV
V–
FIGURE 3. Dark Error (Offset) Adjustment Circuit.
LINEARITY PERFORMANCE
Current output of the photodiode is very linear with radiant
power throughout a wide range. Nonlinearity remains below
approximately 0.01% up to 100µA photodiode current. The
photodiode can produce output currents of 10mA or greater
with high radiant power, but nonlinearity increases to several
percent in this region.
2
1MΩ RF
4
10pF
Gain Adjustment
+50%; –0%
175Ω
5
VO
This very linear performance at high radiant power assumes
that the full photodiode area is uniformly illuminated. If the
light source is focused to a small area of the photodiode,
nonlinearity will occur at lower radiant power.
λ
OPT209
5kΩ
8
1
3
10kΩ
V+
V–
DYNAMIC RESPONSE
Using the internal 1MΩ resistor, the dynamic response of
FIGURE 4. Responsivity (Gain) Adjustment Circuit.
the photodiode/op amp combination can be modeled as a
®
8
OPT209
This OPT209 used
as photodiode, only.
2
2
1MΩ RF
4
5
1MΩ
RF
4
5
NC
NC
10pF
R1 + R2
R2
10pF
VO
=
ID RF
175Ω
175Ω
λ
λ
λ
R1
19kΩ
OPT209
OPT209
8
1
V+
3
8
2
1
3
R2
1kΩ
ID1
V–
Advantages: High gain with low resistor values.
Less sensitive to circuit board leakage.
1MΩ
RF
4
5
Disadvantage: Higher offset and noise than by using high
value for RF.
10pF
FIGURE 5. “T” Feedback Network.
175Ω
VO
VO = (ID2 – ID1) RF
OPT209
2
8
1
3
1MΩ
RF1
ID2
4
5
Bandwidth is reduced to
11kHz due to additional
photodiode capacitance.
V+
V–
10pF
FIGURE 7. Differential Light Measurement.
175Ω
λ
VO = ID1 RF1 + ID2 RF2
OPT209
8
1
V+
3
2
V–
1MΩ
RF
4
5
Max linear
input voltage
(V+) –0.6V typ
10pF
2
175Ω
1MΩ
RF2
4
λ
10pF
OPT209
8
1
+15V
3
R1
1kΩ
ID
–15V
175Ω
5
VO = ID2 RF2
λ
I
O ≤ 5mA
RF
OPT209
IO = ID 1 +
8
1
V+
3
R1
V–
FIGURE 8. Current Output Circuit.
FIGURE 6. Summing Output of Two OPT209s.
®
9
OPT209
C2
0.1µF
2
R2
1MΩ
1MΩ
RF
4
5
10pF
A1
R3
100kΩ
C1
0.1µF
175Ω
R1
+
λ
1MΩ
2
OPT209
VO = IDRF
1MΩ
4
5
8
1
3
–
(1)
VZ
10pF
VZ
5kΩ
3.3V
(pesudo-ground)
0.1µF
175Ω
VO
λ
V+
NOTE: (1) Zener diode or other shunt regulator.
OPT209
8
20dB/decade
FIGURE 9. Single Power Supply Operation.
See AB-061 for details.
R1
2πR2R3C2
f–3dB
=
= 16Hz
FIGURE 10. DC Restoration Rejects Unwanted Steady-
State Background Light.
2
INA106
1MΩ
RF1
4
5
10kΩ
10kΩ
100kΩ
100kΩ
5
10pF
2
3
Difference Measurement
VO = 10 (VO2 – VO1
)
175Ω
6
1
VO1 = ID1 RF1
λ
OPT209
8
2
1
V+
3
V–
G = 10
Log of Ratio Measurement
(Absorbance)
100kΩ
1
1MΩ
RF2
4
5
7
VO1
VO = K log
VO2
LOG100
100kΩ
14
10
10pF
3
175Ω
VO2 = ID2 RF2
1nF
CC
λ
OPT209
8
1
V+
3
V–
FIGURE 11. Differential Light Measurement.
®
10
OPT209
2
3.3nF
1MΩ
RF
4
5
+15V
2
10kΩ
100kΩ
10pF
270Ω
OPA627
10V
6
LED
REF102
175Ω
IN4148
11kΩ
0.03µF
4
λ
OPT209
8
1
+15V
3
–15V
Glass Microscope Slide
LED
Approximately
92% light
available for application.
≈ 8%
OPT209
FIGURE 12. LED Output Regulation Circuit.
100µA
1/2
1/2
REF200
1
REF200 100µA
2
1MΩ
4
10V to 36V
10pF
2N2222
IN4148
175Ω
20kΩ
5
λ
4-20mA
(4mA Dark)
OPT209
8
3
R2
65Ω
R1
22.5kΩ
1.014 X 106
R1 =
R2 =
– 994,000Ω
– 26,000Ω
Values shown provide a dark output of 4mA.
Output is 20mA at a photodiode current of
ID max. Values shown are for ID max max = 1µA.
(1 – 2500 ID max
)
26,000
(1 – 2500 ID max
)
FIGURE 13. 4-20mA Current-Loop Transmitter.
®
11
OPT209
相关型号：
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