THS3115 [BB]
LOW-NOISE, HIGH-SPEED CURRENT FEEDBACK AMPLIFIERS; 低噪声，高速电流反馈型放大器
| 型号： | THS3115 |
| 厂家： | 
BURR-BROWN CORPORATION |
| 描述： | LOW-NOISE, HIGH-SPEED CURRENT FEEDBACK AMPLIFIERS |
| 文件： | 总14页 (文件大小：372K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
THS3112
THS3115
SLOS385 – SEPTEMBER 2001
LOW-NOISE, HIGH-SPEED CURRENT FEEDBACK AMPLIFIERS
FEATURES
APPLICATIONS
D
Low Noise
D
D
D
D
Communication Equipment
Video Distribution
Motor Drivers
– 2.9 pA/√Hz Noninverting Current Noise
– 10.8 pA/√Hz Inverting Current Noise
– 2.2 nV/√Hz Voltage Noise
Piezo Drivers
D
D
Wide Supply Voltage Range ±5 V to ±15 V
Wide Output Swing
DESCRIPTION
– 25 V Output Voltage, R = 100 Ω, ±15-V
PP
L
Supply
The THS3112/5 are low-noise, high-speed current
feedback amplifiers, ideal for any application requiring
high output current. The low noninverting current noise
of 2.9 pA/√Hz and the low inverting current noise of 10.8
pA/√Hz increase signal to noise ratios for enhanced
signal resolution. The THS3112/5 can operate from
±5-V to ±15-V supply voltages, while drawing as little as
4.5 mA of supply current per channel. It offers low
D
D
High Output Current, 150 mA (Min)
High Speed
– 110 MHz (–3 dB, G=1, ±15 V)
– 1550 V/µs Slew Rate (G = 2, ±15 V)
D
D
Low Distortion, G = 2
– -78 dBc (1 MHz, 2 V , 100-Ω load)
PP
Low Power Shutdown (THS3115)
– 300-µA Shutdown Quiescent Current Per
Channel
–78-dBc total harmonic distortion driving 2 V
into a
PP
100-Ω load. The THS3115 features a low power
shutdown mode, consuming only 300-µA shutdown
quiescent current per channel. The THS3112/5 is
packaged in a standard SOIC, SOIC PowerPAD , and
TSSOP PowerPAD packages.
D
D
D
Thermal Shutdown and Short Circuit
Protection
Standard SOIC, SOIC PowerPAD , and
TSSOP PowerPAD Package
Evaluation Module Available
VOLTAGE NOISE AND CURRENT NOISE
vs
THS3115
SOIC (D) AND
TSSOP PowerPAD (PWP) PACKAGE
(TOP VIEW)
THS3112
FREQUENCY
SOIC (D) AND
SOIC PowerPAD (DDA) PACKAGE
(TOP VIEW)
100
V
T
= ±5 V to ±15 V
CC
= 25°C
A
I
n–
1 OUT
1 IN–
1 IN+
V
CC+
1
2
3
4
8
7
6
5
1 OUT
1 IN–
1 IN+
V
CC+
1
2
3
4
5
6
7
14
2 OUT
2 IN–
2 IN+
13 2 OUT
12 2 IN–
11 2 IN+
I
10
n+
V
CC–
V
CC–
N/C
10
9
N/C
V
n
GND
N/C
SHUTDOWN
N/C
8
1
10
100
1 K
10 K
100 K
f – Frequency – Hz
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 2001, Texas Instruments Incorporated
1
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THS3112
THS3115
SLOS385 – SEPTEMBER 2001
AVAILABLE OPTIONS
PACKAGED DEVICE
EVALUATION
MODULES
T
A
SOIC-8
(D)
SOIC-8 PowerPAD
(DDA)
SOIC-14
(D)
TSSOP-14
(PWP)
0°C to 70°C
THS3112CD
THS3112ID
THS3112CDDA
THS3112IDDA
THS3115CD
THS3115ID
THS3115CPWP
THS3115IPWP
THS3112EVM
THS3115EVM
–40°C to 85°C
†
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Supply voltage, V
to V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 V
CC–
CC+
Input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± V
CC
Output current (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275 mA
Differential input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 4 V
Maximum junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Total power dissipation at (or below) 25°C free-air temperature . . . . . . . . . . . See Dissipation Ratings Table
Operating free-air temperature, T : Commercial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
A
Industrial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 85°C
Storage temperature, T : Commercial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 125°C
stg
Industrial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 125°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: TheTHS3112andTHS3115mayincorporateaPowerPAD ontheundersideofthechip. Thisactsasaheatsinkandmustbeconnected
toathermallydissipatingplaneforproperpowerdissipation. Failuretodosomayresultinexceedingthemaximumjunctiontemperature
which could permanently damage the device. See TI Technical Brief SLMA002 for more information about utilizing the PowerPAD
thermally enhanced package.
DISSIPATION RATING TABLE
T
= 25°C
A
PACKAGE
θ
JA
POWER RATING
‡
D-8
DDA
D-14
PWP
95°C/W
67°C/W
1.32 W
1.87 W
‡
66.6°C/W
37.5°C/W
1.88 W
3.3 W
‡
This data was taken using the JEDEC proposed high-K test PCB.
For the JEDEC low-K test PCB, the θ is168°C/W for the D-8
JA
package and 122.3°C/W for the D-14 package.
recommended operating conditions
MIN NOM
MAX
±15
30
UNIT
Dual supply
±5
10
0
Supply voltage, V
to V
V
CC+
CC–
Single supply
C-suffix
70
Operating free-air temperature, T
°C
A
I-suffix
–40
2
85
High level (device shutdown)
Low level (device active)
Shutdown pin input levels, relative to the GND pin
V
0.8
2
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THS3112
THS3115
SLOS385 – SEPTEMBER 2001
electrical characteristics over recommended operating free-air temperature range, T = 25°C,
A
V
= ±15 V, R = 750 Ω, R = 100 Ω (unless otherwise noted)
CC
F L
dynamic performance
PARAMETER
TEST CONDITIONS
MIN
TYP
95
MAX
UNIT
V
= ±5 V
= ±15 V
= ±5 V
= ±15 V
= ±5 V
= ±15 V
= ±15 V
= ±5 V
R
= 1 kΩ,
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
F
R
R
= 100 Ω
= 100 Ω
L
L
G = 1
V
V
V
V
V
V
V
V
V
V
110
103
110
25
Small-signal bandwidth (–3 dB)
R
= 750 Ω,
G = 2
F
BW
SR
MHz
R
= 750 Ω,
G = 2
F
Bandwidth (0.1 dB)
48
V
V
= 10 V
1550
820
1300
50
O
PP
G = 2
= 680 Ω
Slew rate (see Note 2), G=8
Settling time to 0.1%
V/µs
R
F
= 5 V
O
PP
= ±15 V
= ±5 V
V
V
= 2 V
= 5 V
O
PP
PP
t
s
ns
G = –1
= ±15 V
63
O
NOTE 2: Slew rate is defined from the 25% to the 75% output levels.
noise/distortion performance
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
–78
UNIT
V
V
V
V
= 2 V
= 8 V
= 2 V
= 6 V
G = 2,
R
= 680 Ω,
O(PP)
O(PP)
O(PP)
O(PP)
F
V
CC
= ±15 V, f = 1 MHz
–75
THD
Total harmonic distortion
dBc
–76
G = 2,
R
= 680 Ω,
F
V
V
= ±5 V, f = 1 MHz
CC
–74
V
n
Input voltage noise
Input current noise
= ±5 V, ±15 V
f = 10 kHz
2.2
2.9
nV/√Hz
pA/√Hz
CC
Noninverting Input
Inverting Input
I
n
V
CC
= ±5 V, ±15 V
f = 10 kHz
10.8
–67
–67
V
V
V
V
V
V
= ±5 V
= ±15 V
= ±5 V
= ±15 V
= ±5 V
= ±15 V
G = 2,
= 2 Vpp
f = 1 MHz,
CC
CC
CC
CC
CC
CC
Crosstalk
dBc
V
O
0.01%
G = 2,
R = 150 Ω
L
Differential gain error
Differential phase error
0.01%
0.011°
0.011°
40 IRE modulation
±100 IRE Ramp
NTSC and PAL
3
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THS3112
THS3115
SLOS385 – SEPTEMBER 2001
electrical characteristics over recommended operating free-air temperature range, T = 25°C,
A
V
= ±15 V, R = 750 Ω, R = 100 Ω (unless otherwise noted) (continued)
CC
F
L
dc performance
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
8
UNIT
T
A
= 25°C
3
Input offset voltage
T
= full range
= 25°C
13
3
A
mV
V
V
= ±5 V,
= ±15 V
CC
CC
T
A
1
V
IO
Channel offset voltage matching
Offset drift
T
A
= full range
= full range
= 25°C
4
T
A
10
µV/°C
T
A
23
30
2
– Input bias current
T
= full range
T = 25°C
A
A
0.33
4
V
V
= ±5 V,
CC
CC
I
IB
+ Input bias current
µA
= ±15 V
T
= full range
= 25°C
3
A
T
A
22
30
Input offset current
T
A
= full range
V
CC
V
CC
= ±5 V,
= ±15 V
Z
OL
Open loop transimpedance
R
= 1 kΩ,
L
1
MΩ
input characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
V
V
= ±5 V
= ±15 V
= ±5 V,
±2.5
±2.7
CC
CC
CC
V
Input common-mode voltage range
T
= full range
V
ICR
A
±12.5 ±12.7
T
A
T
A
T
A
T
A
= 25°C
56
54
63
60
62
V = –2.5 V to 2.5 V
I
= full range
= 25°C
CMRR Common-mode rejection ratio
dB
67
V
CC
= ±15 V,
V = –12.5 V to 12.5 V
= full range
I
+ Input
1.5
15
2
MΩ
Ω
R
C
Input resistance
I
i
– Input
Input capacitance
pF
output characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
3.9
MAX
UNIT
R
= 1 kΩ,
T
= 25°C
L
A
G = 4, V = 1 V,
I
T
A
= 25°C
3.6
3.4
3.8
V
CC
= ±5 V
R
R
= 100 Ω,
= 1 kΩ,
L
L
T
A
= full range
= 25°C
V
O
Output voltage swing
V
T
A
13.5
13.3
G = 4, V = 3.4 V,
I
T
A
= 25°C
12.2
12
V
CC
= ±15 V
R
R
R
= 100 Ω,
= 25 Ω,
= 25 Ω,
L
L
L
T
A
= full range
G = 4, V = 1.025 V,
I
100
175
130
V
= ±5 V
CC
G = 4, V = 3.4 V,
I
O
Output current drive
Output resistance
T
A
= 25°C
mA
I
270
14
V
= ±15 V
CC
open loop
r
Ω
o
4
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THS3112
THS3115
SLOS385 – SEPTEMBER 2001
electrical characteristics over recommended operating free-air temperature range, T = 25°C,
A
V
= ±15 V, R = 750 Ω, R = 100 Ω, GND = 0 V (unless otherwise noted) (continued)
CC
power supply
F
L
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
5.5
6
UNIT
T
= 25°C
4.4
A
V
CC
V
CC
V
CC
V
CC
= ±5 V
= ±15 V
= ±5 V
= ±15 V
T
= full range
= 25°C
A
Quiescent current (per amplifier)
Power supply rejection ratio
I
mA
CC
T
A
4.9
60
74
6.5
7.5
T
= full range
= 25°C
A
T
A
53
50
68
66
T
= full range
= 25°C
A
PSRR
dB
T
A
T
A
= full range
shutdown characteristics (THS3115 only)
PARAMETER
TEST CONDITIONS
= 0 V, V = ±5 V, ±15 V
MIN
TYP
0.3
0.1
0.4
18
MAX
UNIT
mA
µs
I
t
t
I
Shutdown quiescent current (per channel)
Disable time (see Note 3)
V
V
V
V
0.45
CC(SHDN)
GND
CC
= ±15 V
= ±15 V
DIS
CC
CC
CC
Enable time (see Note 3)
µs
EN
Shutdown pin input bias current for power up
= ±5 V, ±15 V, V
= ±5 V, ±15 V, V
= 0 V
25
µA
IL(SHDN)
(SHDN)
(SHDN)
I
Shutdown pin input bias current for power down
V
CC
= 3.3 V
110
130
µA
IH(SHDN)
NOTE 3: Disable/enable time is defined as the time from when the shutdown signal is applied to the SHDN pin to when the supply current has
reached half of its final value.
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
Small signal closed loop gain
Gain and phase
vs Frequency
1 – 11, 13, 14
vs Frequency
12
15, 16
17, 18
19, 20
21, 22
23, 24
25
Small signal closed loop noninverting gain
Small signal closed loop inverting gain
Small and large signal output
vs Frequency
vs Frequency
vs Frequency
vs Frequency
Harmonic distortion
vs Peak–to–peak output voltage
vs Frequency
V , I
n
Voltage noise and current noise
Common-mode rejection ratio
Power supply rejection ratio
Crosstalk
n
CMRR
PSRR
vs Frequency
26
vs Frequency
27
vs Frequency
28
Z
o
Output impedance
vs Frequency
29
SR
Slew rate
vs Output voltage step
vs Free-air temperature
vs Common-mode input voltage
vs Free-air temperature
vs Output current
vs Output current
vs Supply voltage
30
31
V
Input offset voltage
IO
32
I
Input bias current
33
B
V
O
Output voltage
34, 35
36
Output voltage headroom
Supply current (per channel)
Shutdown response
I
37
CC
38
5
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THS3112
THS3115
SLOS385 – SEPTEMBER 2001
TYPICAL CHARACTERISTICS
SMALL SIGNAL CLOSED LOOP GAIN
vs
SMALL SIGNAL CLOSED LOOP GAIN
vs
SMALL SIGNAL CLOSED LOOP GAIN
vs
FREQUENCY
FREQUENCY
FREQUENCY
3
15
3
R
= 560 Ω
R
= 560 Ω
F
F
R
= 430 Ω
F
0
12
0
R
= 560 Ω
F
R
= 750 Ω
= 1.2 kΩ
F
–3
–3
9
6
R
= 750 Ω
R = 1.2 kΩ
F
F
R
= 750 Ω
F
R
F
–6
–9
–6
–9
3
G = –1,
G = –4,
G = –1,
V
= ±5 V,
–12
–15
0
CC
–12
–15
V
= ±15 V,
R = 100 Ω
L
CC
V
R
= ±15 V,
= 100 Ω
CC
L
R
= 100 Ω
L
–3
0.1
1
10
100
1000
0.1
1
10
100
1000
0.1
1
10
100
1000
f – Frequency – MHz
f – Frequency – MHz
f – Frequency – MHz
Figure 1
Figure 2
Figure 3
SMALL SIGNAL CLOSED LOOP GAIN
vs
SMALL SIGNAL CLOSED LOOP GAIN
vs
SMALL SIGNAL CLOSED LOOP GAIN
vs
FREQUENCY
FREQUENCY
FREQUENCY
15
21
21
R
= 430 Ω
R
= 200 Ω
R
= 200 Ω
F
F
F
18
15
12
9
18
15
12
9
12
9
R
= 560 Ω
F
R
= 430 Ω
F
R
= 750 Ω
F
R
= 750 Ω
F
R = 430 Ω
F
R
= 750 Ω
F
6
3
6
6
G = –4,
G = –8,
G = –8,
V
= ±5 V,
0
CC
V
R
= ±15 V,
= 100 Ω
CC
L
3
0
V
= ±5 V,
3
0
CC
R
= 100 Ω
L
R
= 100 Ω
L
–3
0.1
10
100
1000
1
0.1
1
10
100
1000
0.1
1
10
100
1000
f – Frequency – MHz
f – Frequency – MHz
f – Frequency – MHz
Figure 4
Figure 5
Figure 6
SMALL SIGNAL CLOSED LOOP GAIN
vs
SMALL SIGNAL CLOSED LOOP GAIN
vs
SMALL SIGNAL CLOSED LOOP GAIN
vs
FREQUENCY
FREQUENCY
FREQUENCY
8
3
2
R
= 560 Ω
R
= 750 Ω
F
F
R
= 750 Ω
F
7
6
5
4
1
0
0
R
= 910 Ω
= 1.1 kΩ
F
R
= 1.1 kΩ
F
R
= 1 kΩ
F
–1
–3
R
F
R
= 1 kΩ
F
R
= 750 Ω
F
–2
–3
–4
–6
3
2
1
0
G = 1,
G = 1,
V
= ±15 V,
CC
= 100 Ω
–9
G = 2,
V
= ±5 V,
CC
R
L
V
= ±5 V,
–5
–6
CC
R
= 100 Ω
L
R
= 100 Ω
L
–12
0.1
10
100
1000
0.1
1
10
100
1000
1
0.1
1
100
1000
10
f – Frequency – MHz
f – Frequency – MHz
f – Frequency – MHz
Figure 7
Figure 8
Figure 9
6
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THS3112
THS3115
SLOS385 – SEPTEMBER 2001
TYPICAL CHARACTERISTICS
GAIN AND PHASE
vs
SMALL SIGNAL CLOSED LOOP GAIN
vs
SMALL SIGNAL CLOSED LOOP GAIN
vs
FREQUENCY
FREQUENCY
FREQUENCY
15
12
9
9
15
R
= 430 Ω
F
R
= 560 Ω
R
= 430 Ω
F
F
6
3
12
R
= 560 Ω
R
= 560 Ω
F
F
R
= 1 kΩ
F
9
6
3
R
= 750 Ω
F
R = 750 Ω
F
R
= 750 Ω
F
R
= 1 kΩ
F
R
= 1 kΩ
F
6
0
–3
–6
–9
3
G = 4,
G = 4,
G = 2,
0
V
= ±15 V,
= 100 Ω
0
CC
V
= ±15 V,
= 100 Ω
V
= ±15 V,
= 100 Ω
CC
CC
R
L
R
R
L
L
–3
0.1
–3
0.1
10
100
1000
1
10
100
1000
0.1
1
10
100
1000
1
f – Frequency – MHz
f – Frequency – MHz
f – Frequency – MHz
Figure 10
Figure 11
Figure 12
SMALL SIGNAL CLOSED LOOP
NONINVERTING GAIN
vs
SMALL SIGNAL CLOSED LOOP GAIN
vs
SMALL SIGNAL CLOSED LOOP GAIN
vs
FREQUENCY
FREQUENCY
FREQUENCY
21
21
20
R
= 200 Ω
R
= 200 Ω
F
F
R
= 250 Ω
F
R
= 560 Ω
F
18
15
12
18
15
15
10
5
R
= 750 Ω
R
= 430 Ω
= 750 Ω
F
F
R = 750 Ω
F
R
= 430 Ω
F
R
F
12
9
R
= 1 kΩ
F
9
6
3
0
0
G = 8,
6
3
0
–5
G = 8,
V
= ±5 V,
CC
V
R
= ±15 V,
= 100 Ω
CC
L
R
= 100 Ω
L
–10
–15
V
R
= ±5 V,
CC
= 100 Ω
L
0.1
10
100
1000
0.1
1
10
100
1000
1
10
100
1000
f – Frequency – MHz
f – Frequency – MHz
f – Frequency – MHz
Figure 13
Figure 14
Figure 15
SMALL SIGNAL CLOSED LOOP
NONINVERTING GAIN
vs
SMALL SIGNAL CLOSED LOOP
SMALL SIGNAL CLOSED LOOP
INVERTING GAIN
vs
INVERTING GAIN
vs
FREQUENCY
FREQUENCY
FREQUENCY
21
18
15
12
9
21
21
R
= 430 Ω
18
15
12
9
18
15
12
9
F
R
= 430 Ω
R
= 200 Ω
F
F
R
= 430 Ω
F
R
= 750 Ω
F
R
= 560 Ω
F
R
= 560 Ω
F
6
6
6
R
= 750 Ω
F
R
= 1 kΩ
3
3
3
F
0
0
0
–3
–3
–3
R
= 750 Ω
= ±5 V,
F
–6
–9
–6
–6
–9
–12
–15
–9
V
R
= ±15 V,
= 100 Ω
CC
L
V
R
= ±5 V,
= 100 Ω
CC
L
V
R
CC
–12
–15
–12
= 100 Ω
L
–15
10
100
1000
10
100
1000
10
100
1000
f – Frequency – MHz
f – Frequency – MHz
f – Frequency – MHz
Figure 16
Figure 17
Figure 18
7
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THS3112
THS3115
SLOS385 – SEPTEMBER 2001
TYPICAL CHARACTERISTICS
HARMONIC DISTORTION
SMALL AND LARGE SIGNAL OUTPUT
vs
SMALL AND LARGE SIGNAL OUTPUT
vs
vs
FREQUENCY
FREQUENCY
FREQUENCY
18
–20
–40
–60
–80
18
V
R
= ±5 V, G = 2
V
= ±15 V, G = 2
G = 2,
2nd Harmonic
CC
CC
4 V
4 V
PP
PP
= 680 Ω, R = 100 Ω
R
= 680 Ω, R = 100 Ω
R
R
V
= 680 Ω,
100 Ω,
F
L
F
L
F
L
12
6
12
= ±5 V,
CC
2 V
PP
1.125 V
2 V
V
= 2 V
PP
O
PP
6
0
PP
1.125 V
PP
3rd Harmonic
0
0.711 V
PP
PP
0.711 V
PP
–6
–6
0.4 V
0.4 V
–12
–18
–24
PP
–12
–18
–24
–100
–120
4th Harmonic
10
0.125 V
PP
5th Harmonic
0.1
0.125 V
1
PP
1
100
0.1
1
10
100
1000
0.1
10
100
1000
f – Frequency – MHz
f – Frequency – MHz
f – Frequency – MHz
Figure 19
Figure 20
Figure 21
HARMONIC DISTORTION
HARMONIC DISTORTION
vs
HARMONIC DISTORTION
vs
vs
FREQUENCY
PEAK-TO-PEAK OUTPUT VOLTAGE
PEAK-TO-PEAK OUTPUT VOLTAGE
–70
–20
–40
–60
–80
–10
G = 2,
2nd Harmonic
G = 2,
R
R
V
= 680 Ω,
100 Ω,
F
L
2nd Harmonic
R
R
V
= 680 Ω,
3rd Harmonic
5th Harmonic
F
L
100 Ω,
= ±5 V,
= ±15 V,
CC
–30
–50
–70
V
= 2 V
CC
–80
–90
O(PP)
f = 1MHz
3rd Harmonic
3rd Harmonic
2nd Harmonic
4th Harmonic
G = 2,
F
–100
–110
R
R
= 680 Ω,
100 Ω,
–100
–120
–90
4th Harmonic
L
V
= ±15 V,
CC
5th Harmonic
0.1 1
5th Harmonic
f = 1MHz
4th Harmonic
–110
10
100
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
9
V
– Peak-to-Peak Output Voltage – V
f – Frequency – MHz
V
– Peak-to-Peak Output Voltage – V
PP
PP
Figure 22
Figure 23
Figure 24
POWER SUPPLY REJECTION RATIO
VOLTAGE NOISE AND CURRENT NOISE
vs
COMMON-MODE REJECTION RATIO
vs
vs
FREQUENCY
FREQUENCY
FREQUENCY
70
80
100
G = 2,
V
T
A
= ±5 V to ±15 V
G = 2,
R
R
CC
= 25°C
R
R
= 100 Ω,
= 680 Ω
L
F
70
60
50
40
30
20
10
0
100 Ω,
= 1 kΩ
L
F
60
50
40
30
20
PSRR – ±15 V
I
n–
V
= ±15 V
CC
PSRR – ±5 V
V
= ±5 V
CC
I
10
n+
V
n
10
0
1
0.1
1
10
100
0.1
1
10
100
10
100
1 K
10 K
100 K
f – Frequency – MHz
f – Frequency – MHz
f – Frequency – Hz
Figure 25
Figure 26
Figure 27
8
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THS3112
THS3115
SLOS385 – SEPTEMBER 2001
TYPICAL CHARACTERISTICS
CROSSTALK
vs
OUTPUT IMPEDANCE
vs
SLEW RATE
vs
FREQUENCY
FREQUENCY
OUTPUT VOLTAGE STEP
100
1800
1600
1400
1200
1000
800
600
400
200
0
0
G = 2
G = 2,
= ±5 V to ±15 V,
= 100 Ω,
V
= ±5 V to ±15 V,
CC
R = 1 kΩ
F
–10
R
R
T
= 680 Ω,
= 100 Ω,
= 25°C
V
R
R
F
L
A
CC
L
F
–20
–30
–40
–50
–60
–70
10
= 680 Ω
V
= ±15 V
CC
1
0.1
V
= ±5 V
CC
–80
–90
0.01
–100
0.1
1
10
100
1000
0.1
1
10
100
1000
0
2
4
6
8
10
12
f – Frequency – MHz
f – Frequency – MHz
V
– Output Voltage Step – V
O
Figure 28
Figure 29
Figure 30
INPUT OFFSET VOLTAGE
vs
INPUT OFFSET VOLTAGE
vs
INPUT BIAS CURRENT
vs
FREE-AIR TEMPERATURE
COMMON-MODE INPUT VOLTAGE
FREE-AIR TEMPERATURE
10
9
8
7
6
5
4
0
V
T
= ±15 V,
V
V
R
= ±15 V,
= 0 V,
CC
= 25°C,
CC
CM
A
–1
V
= ±15 V, I
IB–
CC
5
R
= 100 Ω
= 100 Ω
L
L
–2
–3
–4
0
–5
V
= ±5 V, I
IB–
CC
3
2
1
0
V
= ±5 V, I
IB+
CC
–10
–15
–5
–6
V
= ±15 V, I
CC
IB+
–15
–10
–5
0
5
10
15
–40
–20
0
20
40
60
80 85
–40
–20
0
20
40
60
80 85
V
– Common-Mode Input Voltage – V
T
A
– Free-Air Temperature – °C
T
A
– Free-Air Temperature – °C
CM
F
Figure 31
Figure 32
Figure 33
OUTPUT VOLTAGE HEADROOM
OUTPUT VOLTAGE
vs
OUTPUT VOLTAGE
vs
vs
OUTPUT CURRENT
OUTPUT CURRENT
OUTPUT CURRENT
5
5
15
|V | – |V
CC
|
O
4.5
4.5
V
T
A
= ±15 V and ±5 V
CC
= 25°C
4
4
13.5
G = 4,
3.5
3.5
R
= 750 Ω
F
3
2.5
2
3
2.5
12
2
1.5
1.5
1
10.5
V
R
T
A
= ±5 V,
= 750 Ω
= 25°C
V
R
T
A
= ±15 V,
CC
CC
F
1
= 750 Ω
F
0.5
0.5
0
= 25°C
9
0
0
50
100
150
200
250
0
50
100
150
200
250
0
50
100
150
200
250
I
O
– Output Current – |mA|
I
O
– Output Current – mA
I
O
– Output Current – mA
Figure 34
Figure 35
Figure 36
9
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THS3112
THS3115
SLOS385 – SEPTEMBER 2001
TYPICAL CHARACTERISTICS
SUPPLY CURRENT (PER CHANNEL)
vs
SUPPLY VOLTAGE
SHUTDOWN RESPONSE
16
14
5
4
3
2
1
0
V = ±15 V
CC
G = 8
T
A
= 85°C
R
R
= 330 Ω
= 100 Ω
F
F
12
10
V = 0.5 VDC
I
T
A
= 25°C
8
6
4
T
A
= –40°C
2
1.5
1
0.5
0
2
0
0
2.5
5
7.5
10
12.5
15
0
1
2
3
4
5
6
7
8
9
10
V
– Supply Voltage – ±V
CC
t – Time – ns
Figure 38
Figure 37
10
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THS3112
THS3115
SLOS385 – SEPTEMBER 2001
MECHANICAL DATA
D (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PINS SHOWN
0.050 (1,27)
0.020 (0,51)
0.014 (0,35)
0.010 (0,25)
M
14
8
0.008 (0,20) NOM
0.244 (6,20)
0.228 (5,80)
0.157 (4,00)
0.150 (3,81)
Gage Plane
0.010 (0,25)
1
7
0°–ā8°
0.044 (1,12)
A
0.016 (0,40)
Seating Plane
0.004 (0,10)
0.010 (0,25)
0.004 (0,10)
0.069 (1,75) MAX
PINS **
8
14
16
DIM
0.197
(5,00)
0.344
(8,75)
0.394
(10,00)
A MAX
0.189
(4,80)
0.337
(8,55)
0.386
(9,80)
A MIN
4040047/D 10/96
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
D. Falls within JEDEC MS-012
11
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THS3112
THS3115
SLOS385 – SEPTEMBER 2001
MECHANICAL INFORMATION
DDA (S–PDSO–G8)
Power PADt PLASTIC SMALL-OUTLINE
0,49
0,35
M
0,10
1,27
8
5
Thermal Pad
(See Note D)
0,20 NOM
3,99
3,81
6,20
5,84
Gage Plane
0,25
1
4
4,98
4,80
0°–8°
0,89
0,41
1,68 MAX
Seating Plane
0,10
1,55
1,40
0,13
0,03
4202561/A 02/01
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion not to exceed 0,15.
D. The package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane.
This pad is electrically and thermally connected to the backside of the die and possibly selected leads.
PowerPAD is a trademark of Texas Instruments.
12
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THS3112
THS3115
SLOS385 – SEPTEMBER 2001
MECHANICAL DATA
PWP (R-PDSO-G**)
PowerPAD PLASTIC SMALL-OUTLINE
20 PINS SHOWN
0,30
0,19
0,65
20
M
0,10
11
Thermal Pad
(See Note D)
0,15 NOM
4,50
4,30
6,60
6,20
Gage Plane
1
10
0,25
A
0°–ā8°
0,75
0,50
Seating Plane
0,10
0,15
0,05
1,20 MAX
PINS **
14
16
20
24
28
DIM
5,10
4,90
5,10
4,90
6,60
6,40
7,90
7,70
9,80
9,60
A MAX
A MIN
4073225/F 10/98
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusions.
D. The package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane.
This pad is electrically and thermally connected to the backside of the die and possibly selected leads.
E. Falls within JEDEC MO-153
PowerPAD is a trademark of Texas Instruments Incorporated.
13
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