AP2810DMM-G1 [BCDSEMI]
1.0A High-side Power Distribution Switch with Enable and Flag;型号: | AP2810DMM-G1 |
厂家: | BCD SEMICONDUCTOR MANUFACTURING LIMITED |
描述: | 1.0A High-side Power Distribution Switch with Enable and Flag |
文件: | 总14页 (文件大小:684K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag
AP2810
General Description
Features
•
Low MOSFET on Resistance: 60mΩ
@VIN=5.0V
Compliant to USB Specifications
The AP2810 is an integrated high-side power switch
that consists of N-Channel MOSFET, charge pump,
over current & temperature and other related protection
circuits. The switch’s low RDS (ON), 60mΩ, design
easily to meet USB voltage drop requirements. It
includes soft-start to limit inrush current, over-current
protection, load short protection with fold-back, and
thermal shutdown to avoid switch failure during hot
plug-in. Under voltage lockout (UVLO) function is
used to ensure the device remain off unless there is a
valid input voltage present. A Flag output is available
to indicate fault conditions to the local USB
controller.
•
•
•
•
•
•
•
•
Operating Voltage Range: 2.7V to 5.5V
Low Supply Current: 65µA (Typ)
Low Shutdown Current: 1.0µA (Max)
Guarantee 1.0A Continuous Load
Current Limit: 1.1A (Min), 2.1A (Max)
Under-voltage Lockout
Logic Level Enable Pin: Available in
Active-high or Active-low Version
Over-current Protection
•
•
•
•
•
Over Temperature Protection
Load Short Protection with Fold-back
No Reverse Current When Power off
With Output Shutdown Pull-low Resistor for
A/C Versions
The AP2810 is available in standard packages of
SOIC-8 and MSOP-8.
Applications
•
•
•
•
•
USB Power Management
USB Bus/Self Powered Hubs
Hot-plug Power Supplies
Battery-charger Circuits
Notebooks, Motherboard PCs
SOIC-8
MSOP-8
Figure 1. Package Types of AP2810
Jul. 2012 Rev 1. 2
BCD Semiconductor Manufacturing Limited
1
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag
AP2810
Pin Configuration
M/MM Package
(SOIC-8/MSOP-8)
Figure 2. Pin Configuration of AP2810 (Top View)
Pin Descriptions
Pin Number
Pin Name
Function
1
2, 3
4
GND
Ground
VIN
Supply input pin
Chip enable control input, active low or high
Fault flag pin, output with open drain, need a pull-up resistor in
application, active low to indicate OCP or OTP
5
6, 7, 8
VOUT
Switch output voltage
Jul. 2012 Rev 1. 2
BCD Semiconductor Manufacturing Limited
2
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag
AP2810
Functional Block Diagram
Figure 3. Functional Block Diagram of AP2810
Jul. 2012 Rev 1. 2
BCD Semiconductor Manufacturing Limited
3
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag
AP2810
Ordering Information
AP2810
-
G1: Green
Circuit Type
Condition
TR: Tape & Reel
Blank: Tube
A: Active High with Auto Discharge
B: Active High without Auto Discharge
C: Active Low with Auto Discharge
D: Active Low without Auto Discharge
Package
M: SOIC-8
MM: MSOP-8
Part Number
Green
Marking ID
Green
Temperature
Packing
Type
Product Package
Condition
Range
AP2810AM-G1
2810AM-G1
2810AM-G1
2810AMM-G1
2810AMM-G1
2810BM-G1
2810BM-G1
2810BMM-G1
2810BMM-G1
2810CM-G1
2810CM-G1
2810CMM-G1
2810CMM-G1
2810DM-G1
2810DM-G1
2810DMM-G1
2810DMM-G1
Tube
Tape & Reel
Tube
SOIC-8
AP2810A
AP2810AMTR-G1
AP2810AMM-G1
AP2810AMMTR-G1
AP2810BM-G1
Active High
-40 to 85°C
with Auto Discharge
MSOP-8
Tape & Reel
Tube
SOIC-8
AP2810B
AP2810BMTR-G1
AP2810BMM-G1
AP2810BMMTR-G1
AP2810CM-G1
Tape & Reel
Tube
Active High
-40 to 85°C
-40 to 85°C
-40 to 85°C
without Auto Discharge
MSOP-8
Tape & Reel
Tube
SOIC-8
AP2810C
AP2810CMTR-G1
AP2810CMM-G1
AP2810CMMTR-G1
AP2810DM-G1
Tape & Reel
Tube
Active Low
with Auto Discharge
MSOP-8
Tape & Reel
Tube
SOIC-8
AP2810D
AP2810DMTR-G1
AP2810DMM-G1
AP2810DMMTR-G1
Tape & Reel
Tube
Active Low
without Auto Discharge
MSOP-8
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and Green.
Jul. 2012 Rev 1. 2
BCD Semiconductor Manufacturing Limited
4
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag
AP2810
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Power Supply Voltage
VIN
6.0
V
Operating Junction Temperature
Range
TJ
150
-65 to 150
260
ºC
ºC
ºC
Storage Temperature Range
TSTG
TLEAD
Lead Temperature (Soldering,10
Seconds)
SOIC-8
135
150
Thermal Resistance Junction to
Ambient
oC/W
θJA
MSOP-8
ESD (Machine Model)
200
V
V
ESD (Human Body Model)
2000
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VIN
2.7
5.5
V
Operating Ambient Temperature
Range
TA
-40
85
°C
Jul. 2012 Rev 1. 2
BCD Semiconductor Manufacturing Limited
5
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag
AP2810
Electrical Characteristics
(VIN=5.0V, CIN=2.2µF, COUT=1.0µF, Typical TA=25°C, unless otherwise specified)
Parameter
Symbol
Conditions
Min Typ Max Unit
Input Voltage Range
Switch On Resistance
VIN
2.7
5.5
80
V
RDS(ON)
VIN=5V, IOUT=1.0A
60
mΩ
Current Limit
ILIMIT
ISUPPLY
ISHORT
VOUT=4.0V
VIN=5V, No Load
VOUT=0
1.1
1.5
65
2.1
85
A
µA
A
Supply Current
Fold-back Short Current
0.6
Chip Disable, Shutdown
Mode
Shutdown Supply Current
ISHUTDOWN
VENH
VENL
IEN
0.1
1
µA
V
Enable
Threshold
Enable
High
Low
Input
Input
1.6
5.5
0
1.0
1.0
2.7
V
µA
V
Threshold
Enable Pin Input Current
Force 0V to 5.0V at EN Pin
VIN Increasing from 0V
-1.0
2.2
Under Voltage Lockout
Threshold Voltage
VUVLO
2.5
Under Voltage Hysteresis
Reverse Current
VUVLOHY
IREVERSE
0.2
0.1
V
Chip Disable, VOUT>VIN
1.0
µA
Output
Resistance after Shutdown
Pull
Low
RDISCHARGE AP2810A, AP2810C only
100 200
500
Ω
µs
ms
From Enable Active to 90%
of Output
Output Turn-on Time
tON
From Fault Condition to Flag
Active
Flag Delay Time
tDFLG
5
10
35
15
Flag Low Voltage
Flag Leakage
VFLG
ISINK=5mA
70
mV
µA
ILEAKAGE
Flag Disable, Force 5.0V
1.0
Thermal
Temperature
Thermal
Hysteresis
Shutdown
TOTSD
150
30
oC
oC
Shutdown
THYOTSD
Jul. 2012 Rev 1. 2
BCD Semiconductor Manufacturing Limited
6
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag
AP2810
Typical Performance Characteristics
100
100
90
80
70
60
50
40
30
20
10
0
90
VIN=5V
Enable Active
No Load
80
70
60
50
40
30
20
10
0
TA=-40oC
TA= 25oC
TA= 85oC
Enable Active
-10
1.0
-40
-20
0
20
40
60
80
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Ambient Temperature (oC)
Supply Voltage (V)
Figure 4. Supply Current vs. Ambient Temperature
Figure 5. Supply Current vs. Supply Voltage
2.0
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
VIN=3.3V
VIN=5V
Enable Active
TA=25oC
1.9
Enable Active
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
3.0
3.5
4.0
4.5
5.0
5.5
-40
-20
0
20
40
60
80
Ambient Temperature (oC)
Supply Voltage (V)
Figure 6. Current Limit vs. Supply Voltage
Figure 7. Current Limit vs. Ambient Temperature
Jul. 2012 Rev 1. 2
BCD Semiconductor Manufacturing Limited
7
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag
AP2810
Typical Performance Characteristics (Continued)
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
VIN=5V
Enable Active
TA=25oC
Enable Active
-40
-20
0
20
40
60
80
3.0
3.5
4.0
4.5
5.0
5.5
Ambient Temperature (oC)
Input Voltage (V)
Figure 8. Output Short Current
Input Voltage
vs.
Figure 9. Output Short Current
Ambient Temperature
vs.
1.0
0.8
1.0
0.8
VIN=3.5V
VIN=5V
Disable Active
V
OUT=4.5V
0.6
0.6
Disable Active
0.4
0.4
0.2
0.2
0.0
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-0.2
-0.4
-0.6
-0.8
-1.0
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Ambient Temperature (oC)
Ambient Temperature (oC)
Figure 10. Shutdown Current vs. Ambient Temperature
Figure 11. Reverse Current vs. Ambient Temperature
Jul. 2012 Rev 1. 2
BCD Semiconductor Manufacturing Limited
8
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag
AP2810
Typical Performance Characteristics (Continued)
VEN
VEN
(5V/div)
(5V/div)
IINRUSH
(1A/div)
IINRUSH
(20mA/div)
VOUT
VOUT
(1V/div)
(1V/div)
Time(500µs/div)
Time(500µs/div)
Figure 12. Output Turn ON and Rise Time
Figure 13. Output Turn ON and Rise Time
(CIN=1.0μF, COUT=1.0μF, No Load)
(CIN=1.0μF, COUT=1.0μF, RL=5.0Ω)
VEN
(5V/div)
VEN
(5V/div)
COUT=1μF
COUT=470μF
COUT=22μF
VOUT
COUT=220μF
IINRUSH
(1V/div)
(1A/div)
COUT=100μF
VOUT
(1V/div)
Time(500µs/div)
Time(5ms/div)
Figure 14. Output Turn ON and Rise Time
Figure 15. Output Turn OFF and Falling Time
(CIN=1.0μF, COUT=100μF, No Load)
(VIN=5V, CIN=1.0μF, No Load)
Jul. 2012 Rev 1. 2
BCD Semiconductor Manufacturing Limited
9
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag
AP2810
Typical Performance Characteristics (Continued)
VEN
(5V/div)
VOUT
VEN
(5V/div)
VOUT
(1V/div)
(1V/div)
IOUT
(1A/div)
IOUT
(1A/div)
Time(2ms/div)
Time(100ms/div)
Figure 16. Output Turn OFF and Falling Time
Figure 17. Output Short to GND Current
(VIN=5V, CIN=1.0μF, COUT=470μF, RL=5.0Ω)
(VIN=5V,CIN=1.0μF)
VFLAG
VFLAG
(1V/div)
(1V/div)
VOUT
(1V/div)
IOUT
VOUT
(1V/div)
IOUT
(1A/div)
(1A/div)
Time(5ms/div)
Time(5ms/div)
Figure 18. FLAG Response During Over Current
Figure 19. FLAG Response During Over Temperature
(VIN=5V, CIN=1.0μF, COUT=470μF)
(VIN=5V, CIN=1.0μF, COUT=220μF, RL=5.0Ω)
Jul. 2012 Rev 1. 2
BCD Semiconductor Manufacturing Limited
10
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag
AP2810
Typical Application
Note 2: 2.2μF input capacitor is enough in most application cases.
If the VOUT is short to ground frequently during usage, large size input capacitor is necessary, recommend
22μF.
Figure 20. Typical Application of AP2810
Jul. 2012 Rev 1. 2
BCD Semiconductor Manufacturing Limited
11
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag
AP2810
Mechanical Dimensions
SOIC-8
Unit: mm(inch)
4.700(0.185)
0.320(0.013)
1.350(0.053)
5.100(0.201)
1.750(0.069)
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
6.200(0.244)
1.270(0.050)
TYP
D
20:1
0.800(0.031)
0.200(0.008)
0.100(0.004)
0.300(0.012)
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
0.190(0.007)
0.250(0.010)
1°
5°
0.330(0.013)
0.510(0.020)
0.900(0.035)
06)
.0
0(0
.15
R0
0.450(0.017)
0.800(0.031)
Note: Eject hole, oriented hole and mold mark is optional.
Jul. 2012 Rev 1. 2
BCD Semiconductor Manufacturing Limited
12
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag
AP2810
Mechanical Dimensions (Continued)
MSOP-8
Unit: mm(inch)
Jul. 2012 Rev 1. 2
BCD Semiconductor Manufacturing Limited
13
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
- Headquarters
- Wafer Fab
BCD Semiconductor Manufacturing Limited
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-24162266, Fax: +86-21-24162277
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen Office
Taiwan Office
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Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
BCD Semiconductor (Taiwan) Company Limited
BCD Semiconductor Corp.
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
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