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AP2810DMTR-G1 [BCDSEMI]

1.0A High-side Power Distribution Switch with Enable and Flag;
AP2810DMTR-G1
型号： AP2810DMTR-G1
厂家： BCD SEMICONDUCTOR MANUFACTURING LIMITED    BCD SEMICONDUCTOR MANUFACTURING LIMITED
描述：

1.0A High-side Power Distribution Switch with Enable and Flag
文件： 总14页 (文件大小：684K)
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Advance Datasheet  
1.0A High-side Power Distribution Switch with Enable and Flag  
AP2810  
General Description  
Features  
•
Low MOSFET on Resistance: 60mΩ  
@VIN=5.0V  
Compliant to USB Specifications  
The AP2810 is an integrated high-side power switch  
that consists of N-Channel MOSFET, charge pump,  
over current & temperature and other related protection  
circuits. The switch’s low RDS (ON), 60mΩ, design  
easily to meet USB voltage drop requirements. It  
includes soft-start to limit inrush current, over-current  
protection, load short protection with fold-back, and  
thermal shutdown to avoid switch failure during hot  
plug-in. Under voltage lockout (UVLO) function is  
used to ensure the device remain off unless there is a  
valid input voltage present. A Flag output is available  
to indicate fault conditions to the local USB  
controller.  
•
•
•
•
•
•
•
•
Operating Voltage Range: 2.7V to 5.5V  
Low Supply Current: 65µA (Typ)  
Low Shutdown Current: 1.0µA (Max)  
Guarantee 1.0A Continuous Load  
Current Limit: 1.1A (Min), 2.1A (Max)  
Under-voltage Lockout  
Logic Level Enable Pin: Available in  
Active-high or Active-low Version  
Over-current Protection  
•
•
•
•
•
Over Temperature Protection  
Load Short Protection with Fold-back  
No Reverse Current When Power off  
With Output Shutdown Pull-low Resistor for  
A/C Versions  
The AP2810 is available in standard packages of  
SOIC-8 and MSOP-8.  
Applications  
•
•
•
•
•
USB Power Management  
USB Bus/Self Powered Hubs  
Hot-plug Power Supplies  
Battery-charger Circuits  
Notebooks, Motherboard PCs  
SOIC-8  
MSOP-8  
Figure 1. Package Types of AP2810  
Jul. 2012 Rev 1. 2  
BCD Semiconductor Manufacturing Limited  
1
Advance Datasheet  
1.0A High-side Power Distribution Switch with Enable and Flag  
AP2810  
Pin Configuration  
M/MM Package  
（SOIC-8/MSOP-8）  
Figure 2. Pin Configuration of AP2810 (Top View)  
Pin Descriptions  
Pin Number  
Pin Name  
Function  
1
2, 3  
4
GND  
Ground  
VIN  
Supply input pin  
Chip enable control input, active low or high  
Fault flag pin, output with open drain, need a pull-up resistor in  
application, active low to indicate OCP or OTP  
5
6, 7, 8  
VOUT  
Switch output voltage  
Jul. 2012 Rev 1. 2  
BCD Semiconductor Manufacturing Limited  
2
Advance Datasheet  
1.0A High-side Power Distribution Switch with Enable and Flag  
AP2810  
Functional Block Diagram  
Figure 3. Functional Block Diagram of AP2810  
Jul. 2012 Rev 1. 2  
BCD Semiconductor Manufacturing Limited  
3
Advance Datasheet  
1.0A High-side Power Distribution Switch with Enable and Flag  
AP2810  
Ordering Information  
AP2810  
-
G1: Green  
Circuit Type  
Condition  
TR: Tape & Reel  
Blank: Tube  
A: Active High with Auto Discharge  
B: Active High without Auto Discharge  
C: Active Low with Auto Discharge  
D: Active Low without Auto Discharge  
Package  
M: SOIC-8  
MM: MSOP-8  
Part Number  
Green  
Marking ID  
Green  
Temperature  
Packing  
Type  
Product Package  
Condition  
Range  
AP2810AM-G1  
2810AM-G1  
2810AM-G1  
2810AMM-G1  
2810AMM-G1  
2810BM-G1  
2810BM-G1  
2810BMM-G1  
2810BMM-G1  
2810CM-G1  
2810CM-G1  
2810CMM-G1  
2810CMM-G1  
2810DM-G1  
2810DM-G1  
2810DMM-G1  
2810DMM-G1  
Tube  
Tape & Reel  
Tube  
SOIC-8  
AP2810A  
AP2810AMTR-G1  
AP2810AMM-G1  
AP2810AMMTR-G1  
AP2810BM-G1  
Active High  
-40 to 85°C  
with Auto Discharge  
MSOP-8  
Tape & Reel  
Tube  
SOIC-8  
AP2810B  
AP2810BMTR-G1  
AP2810BMM-G1  
AP2810BMMTR-G1  
AP2810CM-G1  
Tape & Reel  
Tube  
Active High  
-40 to 85°C  
-40 to 85°C  
-40 to 85°C  
without Auto Discharge  
MSOP-8  
Tape & Reel  
Tube  
SOIC-8  
AP2810C  
AP2810CMTR-G1  
AP2810CMM-G1  
AP2810CMMTR-G1  
AP2810DM-G1  
Tape & Reel  
Tube  
Active Low  
with Auto Discharge  
MSOP-8  
Tape & Reel  
Tube  
SOIC-8  
AP2810D  
AP2810DMTR-G1  
AP2810DMM-G1  
AP2810DMMTR-G1  
Tape & Reel  
Tube  
Active Low  
without Auto Discharge  
MSOP-8  
Tape & Reel  
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant  
and Green.  
Jul. 2012 Rev 1. 2  
BCD Semiconductor Manufacturing Limited  
4
Advance Datasheet  
1.0A High-side Power Distribution Switch with Enable and Flag  
AP2810  
Absolute Maximum Ratings (Note 1)  
Parameter  
Symbol  
Value  
Unit  
Power Supply Voltage  
VIN  
6.0  
V
Operating Junction Temperature  
Range  
TJ  
150  
-65 to 150  
260  
ºC  
ºC  
ºC  
Storage Temperature Range  
TSTG  
TLEAD  
Lead Temperature (Soldering,10  
Seconds)  
SOIC-8  
135  
150  
Thermal Resistance Junction to  
Ambient  
oC/W  
θJA  
MSOP-8  
ESD (Machine Model)  
200  
V
V
ESD (Human Body Model)  
2000  
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to  
the device. These are stress ratings only, and functional operation of the device at these or any other conditions  
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute  
Maximum Ratings” for extended periods may affect device reliability.  
Recommended Operating Conditions  
Parameter  
Symbol  
Min  
Max  
Unit  
Supply Voltage  
VIN  
2.7  
5.5  
V
Operating Ambient Temperature  
Range  
TA  
-40  
85  
°C  
Jul. 2012 Rev 1. 2  
BCD Semiconductor Manufacturing Limited  
5
Advance Datasheet  
1.0A High-side Power Distribution Switch with Enable and Flag  
AP2810  
Electrical Characteristics  
(VIN=5.0V, CIN=2.2µF, COUT=1.0µF, Typical TA=25°C, unless otherwise specified)  
Parameter  
Symbol  
Conditions  
Min Typ Max Unit  
Input Voltage Range  
Switch On Resistance  
VIN  
2.7  
5.5  
80  
V
RDS(ON)  
VIN=5V, IOUT=1.0A  
60  
mΩ  
Current Limit  
ILIMIT  
ISUPPLY  
ISHORT  
VOUT=4.0V  
VIN=5V, No Load  
VOUT=0  
1.1  
1.5  
65  
2.1  
85  
A
µA  
A
Supply Current  
Fold-back Short Current  
0.6  
Chip Disable, Shutdown  
Mode  
Shutdown Supply Current  
ISHUTDOWN  
VENH  
VENL  
IEN  
0.1  
1
µA  
V
Enable  
Threshold  
Enable  
High  
Low  
Input  
Input  
1.6  
5.5  
0
1.0  
1.0  
2.7  
V
µA  
V
Threshold  
Enable Pin Input Current  
Force 0V to 5.0V at EN Pin  
VIN Increasing from 0V  
-1.0  
2.2  
Under Voltage Lockout  
Threshold Voltage  
VUVLO  
2.5  
Under Voltage Hysteresis  
Reverse Current  
VUVLOHY  
IREVERSE  
0.2  
0.1  
V
Chip Disable, VOUT>VIN  
1.0  
µA  
Output  
Resistance after Shutdown  
Pull  
Low  
RDISCHARGE AP2810A, AP2810C only  
100 200  
500  
Ω
µs  
ms  
From Enable Active to 90%  
of Output  
Output Turn-on Time  
tON  
From Fault Condition to Flag  
Active  
Flag Delay Time  
tDFLG  
5
10  
35  
15  
Flag Low Voltage  
Flag Leakage  
VFLG  
ISINK=5mA  
70  
mV  
µA  
ILEAKAGE  
Flag Disable, Force 5.0V  
1.0  
Thermal  
Temperature  
Thermal  
Hysteresis  
Shutdown  
TOTSD  
150  
30  
oC  
oC  
Shutdown  
THYOTSD  
Jul. 2012 Rev 1. 2  
BCD Semiconductor Manufacturing Limited  
6
Advance Datasheet  
1.0A High-side Power Distribution Switch with Enable and Flag  
AP2810  
Typical Performance Characteristics  
100  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
VIN=5V  
Enable Active  
No Load  
80  
70  
60  
50  
40  
30  
20  
10  
0
TA=-40oC  
TA= 25oC  
TA= 85oC  
Enable Active  
-10  
1.0  
-40  
-20  
0
20  
40  
60  
80  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
Ambient Temperature (oC)  
Supply Voltage (V)  
Figure 4. Supply Current vs. Ambient Temperature  
Figure 5. Supply Current vs. Supply Voltage  
2.0  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
VIN=3.3V  
VIN=5V  
Enable Active  
TA=25oC  
1.9  
Enable Active  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
-40  
-20  
0
20  
40  
60  
80  
Ambient Temperature (oC)  
Supply Voltage (V)  
Figure 6. Current Limit vs. Supply Voltage  
Figure 7. Current Limit vs. Ambient Temperature  
Jul. 2012 Rev 1. 2  
BCD Semiconductor Manufacturing Limited  
7
Advance Datasheet  
1.0A High-side Power Distribution Switch with Enable and Flag  
AP2810  
Typical Performance Characteristics (Continued)  
0.80  
0.75  
0.70  
0.65  
0.60  
0.55  
0.50  
0.45  
0.40  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
VIN=5V  
Enable Active  
TA=25oC  
Enable Active  
-40  
-20  
0
20  
40  
60  
80  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
Ambient Temperature (oC)  
Input Voltage (V)  
Figure 8. Output Short Current  
Input Voltage  
vs.  
Figure 9. Output Short Current  
Ambient Temperature  
vs.  
1.0  
0.8  
1.0  
0.8  
VIN=3.5V  
VIN=5V  
Disable Active  
V
OUT=4.5V  
0.6  
0.6  
Disable Active  
0.4  
0.4  
0.2  
0.2  
0.0  
0.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Ambient Temperature (oC)  
Ambient Temperature (oC)  
Figure 10. Shutdown Current vs. Ambient Temperature  
Figure 11. Reverse Current vs. Ambient Temperature  
Jul. 2012 Rev 1. 2  
BCD Semiconductor Manufacturing Limited  
8
Advance Datasheet  
1.0A High-side Power Distribution Switch with Enable and Flag  
AP2810  
Typical Performance Characteristics (Continued)  
VEN  
VEN  
(5V/div)  
(5V/div)  
IINRUSH  
(1A/div)  
IINRUSH  
(20mA/div)  
VOUT  
VOUT  
(1V/div)  
(1V/div)  
Time(500µs/div)  
Time(500µs/div)  
Figure 12. Output Turn ON and Rise Time  
Figure 13. Output Turn ON and Rise Time  
(CIN=1.0μF, COUT=1.0μF, No Load)  
(CIN=1.0μF, COUT=1.0μF, RL=5.0Ω)  
VEN  
(5V/div)  
VEN  
(5V/div)  
COUT=1μF  
COUT=470μF  
COUT=22μF  
VOUT  
COUT=220μF  
IINRUSH  
(1V/div)  
(1A/div)  
COUT=100μF  
VOUT  
(1V/div)  
Time(500µs/div)  
Time(5ms/div)  
Figure 14. Output Turn ON and Rise Time  
Figure 15. Output Turn OFF and Falling Time  
(CIN=1.0μF, COUT=100μF, No Load)  
(VIN=5V, CIN=1.0μF, No Load)  
Jul. 2012 Rev 1. 2  
BCD Semiconductor Manufacturing Limited  
9
Advance Datasheet  
1.0A High-side Power Distribution Switch with Enable and Flag  
AP2810  
Typical Performance Characteristics (Continued)  
VEN  
(5V/div)  
VOUT  
VEN  
(5V/div)  
VOUT  
(1V/div)  
(1V/div)  
IOUT  
(1A/div)  
IOUT  
(1A/div)  
Time(2ms/div)  
Time(100ms/div)  
Figure 16. Output Turn OFF and Falling Time  
Figure 17. Output Short to GND Current  
(VIN=5V, CIN=1.0μF, COUT=470μF, RL=5.0Ω)  
(VIN=5V,CIN=1.0μF)  
VFLAG  
VFLAG  
(1V/div)  
(1V/div)  
VOUT  
(1V/div)  
IOUT  
VOUT  
(1V/div)  
IOUT  
(1A/div)  
(1A/div)  
Time(5ms/div)  
Time(5ms/div)  
Figure 18. FLAG Response During Over Current  
Figure 19. FLAG Response During Over Temperature  
(VIN=5V, CIN=1.0μF, COUT=470μF)  
(VIN=5V, CIN=1.0μF, COUT=220μF, RL=5.0Ω)  
Jul. 2012 Rev 1. 2  
BCD Semiconductor Manufacturing Limited  
10  
Advance Datasheet  
1.0A High-side Power Distribution Switch with Enable and Flag  
AP2810  
Typical Application  
Note 2: 2.2μF input capacitor is enough in most application cases.  
If the VOUT is short to ground frequently during usage, large size input capacitor is necessary, recommend  
22μF.  
Figure 20. Typical Application of AP2810  
Jul. 2012 Rev 1. 2  
BCD Semiconductor Manufacturing Limited  
11  
Advance Datasheet  
1.0A High-side Power Distribution Switch with Enable and Flag  
AP2810  
Mechanical Dimensions  
SOIC-8  
Unit: mm(inch)  
4.700(0.185)  
0.320(0.013)  
1.350(0.053)  
5.100(0.201)  
1.750(0.069)  
0.675(0.027)  
0.725(0.029)  
D
5.800(0.228)  
6.200(0.244)  
1.270(0.050)  
TYP  
D
20:1  
0.800(0.031)  
0.200(0.008)  
0.100(0.004)  
0.300(0.012)  
0°  
8°  
1.000(0.039)  
3.800(0.150)  
4.000(0.157)  
0.190(0.007)  
0.250(0.010)  
1°  
5°  
0.330(0.013)  
0.510(0.020)  
0.900(0.035)  
06)  
.0  
0(0  
.15  
R0  
0.450(0.017)  
0.800(0.031)  
Note: Eject hole, oriented hole and mold mark is optional.  
Jul. 2012 Rev 1. 2  
BCD Semiconductor Manufacturing Limited  
12  
Advance Datasheet  
1.0A High-side Power Distribution Switch with Enable and Flag  
AP2810  
Mechanical Dimensions (Continued)  
MSOP-8  
Unit: mm(inch)  
Jul. 2012 Rev 1. 2  
BCD Semiconductor Manufacturing Limited  
13  
BCD Semiconductor Manufacturing Limited  
http://www.bcdsemi.com  
- Headquarters  
- Wafer Fab  
BCD Semiconductor Manufacturing Limited  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.  
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China  
800 Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-24162266, Fax: +86-21-24162277  
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008  
REGIONAL SALES OFFICE  
Shenzhen Office  
Taiwan Office  
USA Office  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office  
BCD Semiconductor (Taiwan) Company Limited  
BCD Semiconductor Corp.  
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,  
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,  
30920 Huntwood Ave. Hayward,  
China  
Taiwan  
Tel: +886-2-2656 2808  
CA 94544, USA  
Tel: +86-755-8826 7951  
Tel : +1-510-324-2988  
Fax: +86-755-8826 7865  
Fax: +886-2-2656 2806  
Fax: +1-510-324-2788  

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