AP4310M-E1 [BCDSEMI]

DUAL OP AMP AND VOLTAGE REFERENCE; 双运算放大器和参考电压
AP4310M-E1
型号: AP4310M-E1
厂家: BCD SEMICONDUCTOR MANUFACTURING LIMITED    BCD SEMICONDUCTOR MANUFACTURING LIMITED
描述:

DUAL OP AMP AND VOLTAGE REFERENCE
双运算放大器和参考电压

运算放大器 光电二极管 CD
文件: 总11页 (文件大小:130K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preliminary Datasheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310  
General Description  
Features  
The AP4310 is a monolithic IC specifically designed Op Amp  
to regulate the output current and voltage levels of  
switching battery chargers and power supplies.  
·
·
Input Offset Voltage: 0.5mV  
Supply Current: 75µA per Op Amp at 5.0V Sup-  
ply Voltage  
The device contains two Op Amps and a 2.5V preci-  
sion shunt voltage reference. Op Amp 1 is designed for  
voltage control with its non-inverting input internally  
connects to the output of the shunt regulator. Op Amp  
2 is for current control with both inputs uncommitted.  
The IC offers the power converter designer a control  
solution that features increased precision with a corre-  
sponding reduction in system complexity and cost.  
·
·
Unity Gain Bandwidth: 1MHz  
Output Voltage Swing: 0 to (V - 1.5) V  
CC  
·
Power Supply Range: 3 to 36V  
Voltage Reference  
·
·
·
·
Fixed Output Voltage Reference: 2.5V  
Voltage Tolerance: ± 0.4%, ± 1%  
Sink Current Capability: 0.05 to 80mA  
Typical Output Impedance: 0.2Ω  
The AP4310 is available in standard packages of DIP-  
8 and SOIC-8.  
Applications  
·
·
Battery Charger  
Switching Power Supply  
SOIC-8  
DIP-8  
Figure 1. Package Types of AP4310  
BCD Semiconductor Manufacturing Limited  
Apr. 2005 Rev. 1. 2  
1
Preliminary Datasheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310  
Pin Configuration  
M Package/P Package  
(SOIC-8/DIP-8)  
1
2
VCC  
8
7
6
5
OUTPUT 1  
INPUT 1-  
OUTPUT 2  
INPUT 2-  
INPUT 2+  
3
4
INPUT 1+ / VKA  
GND  
Top View  
Figure 2. Pin Configuration of AP4310  
Functional Block Diagram  
1
8
7
OUTPUT 1  
INPUT 1-  
V
CC  
Op  
Amp 1  
-
+
2
3
OUTPUT 2  
INPUT 2-  
INPUT 2+  
-
+
INPUT 1+ / V  
KA  
6
5
Op  
Amp 2  
GND  
4
Figure 3. Functional Block Diagram of AP4310  
BCD Semiconductor Manufacturing Limited  
Apr. 2005 Rev. 1. 2  
2
Preliminary Datasheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310  
Ordering Information  
AP4310  
-
E1: Lead Free  
Blank: Tin Lead  
Circuit Type  
TR: Tape and Reel  
Blank: Tube  
Voltage Tolerance  
A: ± 0.4%  
Package  
M: SOIC-8  
P: DIP-8  
Blank: ± 1%  
Part Number  
Marking ID  
Reference  
Voltage  
Voltage  
Tolerance ture Range  
Tempera-  
Packing  
Type  
Package  
Tin Lead  
Lead Free  
Tin Lead  
AP4310AP  
AP4310P  
4310AM  
Lead Free  
AP4310AP-E1  
AP4310P-E1  
AP4310AM-E1  
AP4310AP  
AP4310P  
AP4310AP-E1  
AP4310P-E1  
± 0.4%  
-40 to105oC  
DIP-8  
2.5V  
Tube  
Tube  
± 1%  
-40 to105oC  
-40 to105oC  
AP4310AM  
AP4310AM-E1  
± 0.4%  
AP4310AMTR AP4310AMTR-E1 4310AM  
AP4310AM-E1 Tape & Reel  
SOIC-8  
2.5V  
AP4310M  
AP4310M-E1  
4310M  
4310M  
AP4310M-E1  
AP4310M-E1  
Tube  
± 1%  
AP4310MTR  
AP4310MTR-E1  
Tape & Reel  
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.  
BCD Semiconductor Manufacturing Limited  
Apr. 2005 Rev. 1. 2  
3
Preliminary Datasheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310  
Absolute Maximum Ratings (Note 1)  
Parameter  
Symbol  
Value  
Unit  
Power Supply Voltage (V to GND)  
V
40  
V
CC  
CC  
Op Amp 1 and 2 Input Voltage Range (Pins 2, 5, 6)  
Op Amp 2 Input Differential Voltage (Pins 5, 6)  
Voltage Reference Cathode Current (Pin 3)  
Power Dissipation  
V
V
- 0.3 to V + 0.3  
V
V
IN  
ID  
K
CC  
40  
I
100  
mA  
mW  
P
DIP-8  
SOIC-8  
800  
500  
D
o
Storage Temperature Range  
T
-65 to 150  
2000  
STG  
C
ESD Protection Voltage (Human Body Model)  
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings " may cause permanent damage to  
the device. These are stress ratings only, and functional operation of the device at these or any other conditions  
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max-  
imum Ratings " for extended periods may affect device reliability.  
Recommended Operating Conditions  
Parameter  
Min  
3
Max  
36  
Unit  
Supply Voltage  
Ambient Temperature  
V
o
-40  
105  
C
BCD Semiconductor Manufacturing Limited  
Apr. 2005 Rev. 1. 2  
4
Preliminary Datasheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310  
Electrical Characteristics  
Operating Conditions: VCC = +5V, TA= 25oC unless otherwise specified.  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCC = 5V, no load, -40oC TA 105oC  
Total Supply Current, excluding Cur-  
rent in Voltage Reference  
0.15  
0.25  
mA  
VCC = 30V, no load, -40oC TA 105oC  
0.20  
0.30  
Voltage Reference Section  
TA = 25oC  
AP4310A  
2.49  
2.48  
2.50  
2.50  
2.50  
2.50  
5
2.51  
2.52  
2.525  
2.55  
24  
V
V
-40oC TA 105oC  
TA = 25oC  
Reference Voltage  
AP4310  
I
K = 10mA  
2.475  
2.45  
-40oC TA 105oC  
Reference Voltage Deviation  
Over Full Temperature Range  
mV  
mA  
I
K = 10mA, TA = -40 to 105oC  
Minimum Cathode Current  
for Regulation  
0.01  
0.2  
0.05  
0.5  
Dynamic Impedance  
I
K = 1.0 to 80mA, f<1kHz  
Op Amp 1 Section (VCC = 5V, VO = 1.4V, TA = 25oC, unless otherwise noted)  
TA = 25oC  
Input Offset Voltage  
3
5
7
mV  
0.5  
TA = -40 to 105oC  
TA = -40 to 105oC  
o
Input Offset Voltage  
Temperature Drift  
µV/ C  
TA = 25oC  
Input Bias Current (Inverting Input  
Only)  
150  
nA  
20  
Large Signal Voltage Gain  
V
V
V
V
CC = 15V, RL = 2K, VO = 1.4 to 11.4V  
85  
70  
20  
7
dB  
dB  
100  
90  
40  
20  
28  
17  
0.5  
Power Supply Rejection Ratio  
CC = 5 to 30V  
Output Current  
Source  
Sink  
CC = 15V, VID = 1V, VO =2V  
CC = 15V, VID = -1V, VO = 2V  
mA  
mA  
V
Output Voltage Swing (High)  
Output Voltage Swing (Low)  
Slew Rate  
VCC = 30V, RL = 10K, VID = 1V  
27  
V
CC = 30V, RL = 10K, VID = -1V  
CC = 18V, RL = 2k, AV = 1,  
100  
mV  
V/µ s  
V
0.2  
0.7  
VIN = 0.5 to 2V, CL = 100pF  
Unity Gain Bandwidth  
Apr. 2005 Rev. 1. 2  
V
CC = 30V, RL = 2k, CL = 100pF  
1.0  
MHz  
BCD Semiconductor Manufacturing Limited  
5
Preliminary Datasheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310  
Electrical Characteristics (Continued)  
Operating Conditions: VCC = +5V, TA= 25oC unless otherwise specified.  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Op Amp 2 Section (VCC = 5V, VO = 1.4V, TA = 25oC, unless otherwise noted)  
TA = 25oC  
Input Offset Voltage  
0.5  
3
5
7
mV  
TA = -40 to 105oC  
TA = -40 to 105oC  
µV/oC  
Input Offset Voltage Temperature  
Drift  
TA = 25oC  
Input Offset Current  
2
30  
150  
nA  
nA  
TA = 25oC  
Input Bias Current  
20  
Input Voltage Range  
V
CC = 0 to 36V  
TA = 25oC, VCM = 0 to 3.5V  
CC = 15V, RL = 2k, VO = 1.4 to 11.4V  
VCC = 5 to 30V  
0
VCC - 1.5  
V
Common Mode Rejection Ratio  
70  
85  
dB  
Large Signal Voltage Gain  
V
85  
70  
20  
7
100  
90  
dB  
dΒ  
Power Supply Rejection Ratio  
Output Current  
Source  
Sink  
VCC = 15V, VID = 1V, VO = 2V  
VCC = 15V, VID = -1V, VO = 2V  
VCC = 30V, RL = 10k, VID = 1V  
VCC = 30V, RL = 10k, VID = -1V  
40  
mA  
mA  
V
20  
28  
Output Voltage Swing (High)  
Output Voltage Swing (Low)  
Slew Rate  
27  
17  
100  
mV  
V/µ s  
VCC = 18V, RL = 2k, AV = 1,  
VIN = 0.5 to 2V, CL = 100pF  
0.2  
0.7  
0.5  
Unity Gain Bandwidth  
VCC = 30V, RL = 2k, CL = 100pF  
MHz  
1.0  
BCD Semiconductor Manufacturing Limited  
Apr. 2005 Rev. 1. 2  
6
Preliminary Datasheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310  
Typical Performance Characteristics  
2.510  
2.505  
2.500  
2.495  
2.490  
2.485  
150  
100  
50  
VKA=VREF  
TA=250C  
0
-50  
2.480  
-40  
-100  
-2  
-20  
0
20  
40  
60  
80  
100  
120  
-1  
0
1
2
3
Ambient Temperature (oC)  
Cathode Voltage (V)  
Figure 4. Reference Voltage vs. Ambient Temperature  
Figure 5. Cathode Current vs. Cathode Voltage  
30  
25  
20  
15  
10  
5
110  
100  
90  
80  
70  
60  
RL=2KΩ  
RL=20KΩ  
0
-40  
-20  
0
20  
40  
60  
80  
100  
120  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
Ambient Temperature (oC)  
Supply Voltage (V)  
Figure 7. Op Amp Voltage Gain  
Figure 6. Input Bias Current vs. Ambient Temperature  
BCD Semiconductor Manufacturing Limited  
Apr. 2005 Rev. 1. 2  
7
Preliminary Datasheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310  
Typical Application  
R1  
R6  
Opto  
Isolator  
-
Op Amp 2  
Battery  
Pack  
AC  
Line  
SMPS  
+
R7  
R4  
R5  
R3  
Current  
Sense  
-
R2  
Op Amp 1  
+
R8  
AP4310  
Figure 8. Application of AP4310 in a Constant Current and Constant Voltage Charger  
BCD Semiconductor Manufacturing Limited  
Apr. 2005 Rev. 1. 2  
8
Preliminary Datasheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310  
Mechanical Dimensions:  
DIP-8  
Unit: mm(inch)  
0.700(0.028)  
7.620(0.300)TYP  
5°  
1.524(0.060) TYP  
6°  
3.200(0.126)  
3.600(0.142)  
3.710(0.146)  
4.310(0.170)  
0.510(0.020)MIN  
3.000(0.118)  
3.600(0.142)  
0.204(0.008)  
0.360(0.014)  
0.254(0.010)TYP  
8.200(0.323)  
9.400(0.370)  
2.540(0.100)TYP  
0.130(0.005)MIN  
0.360(0.014)  
0.560(0.022)  
6.200(0.244)  
6.600(0.260)  
R0.750(0.030)  
Φ3.000(0.118)  
Depth  
0.100(0.004)  
0.200(0.008)  
9.000(0.354)  
9.400(0.370)  
BCD Semiconductor Manufacturing Limited  
Apr. 2005 Rev. 1. 2  
9
Preliminary Datasheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310  
Mechanical Dimensions (Continued):  
SOIC-8  
Unit: mm(inch)  
4.800(0.189)  
0.320(0.013)  
1.350(0.053)  
5.000(0.197)  
1.750(0.069)  
0.675(0.027)  
0.725(0.029)  
D
5.800(0.228)  
6.200(0.244)  
1.270(0.050)  
TYP  
D
20:1  
φ
0.800(0.031)  
0.200(0.008)  
0.100(0.004)  
0.300(0.012)  
0°  
8°  
1.000(0.039)  
3.800(0.150)  
4.000(0.157)  
1°  
5°  
0.330(0.013)  
0.510(0.020)  
0.900(0.035)  
6)  
00  
(0.  
50  
.1  
R0  
0.190(0.007)  
0.250(0.010)  
BCD Semiconductor Manufacturing Limited  
Apr. 2005 Rev. 1. 2  
10  
http://www.bcdsemi.com  
BCD Semiconductor Corporation  
3170 De La Cruz Blvd, Suite # 105 Santa Clara, CA 95054-2411, U.S.A  
Tel: +1-408-988 6388, Fax: +1-408-988 6386  
Tel: +86-21-6485-1491, Fax: +86-21-5450-0008  
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.  
800 Yi Shan Road, Shanghai 200233, PRC  
Advanced Analog Circuits (Shanghai) Corporation  
8F, B Zone, 900 Yi Shan Road, Shanghai 200233, PRC  
BCD Semiconductor (Taiwan) Company Limited  
Room 2210, 22nd Fl, 333, Keelung Road, Sec. 1, TaiPei (110), Taiwan  
Tel: +886-2-2758 6828, Fax: +886-2-2758 6892  
IMPORTANT NOTICE  
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any pro-  
ducts or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for  
use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any  
liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limi-  
ted does not convey any license under its patent rights or other rights nor the rights of others.  

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