APT13005SU-E1 [BCDSEMI]
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR; 高压快速开关NPN功率晶体管型号: | APT13005SU-E1 |
厂家: | BCD SEMICONDUCTOR MANUFACTURING LIMITED |
描述: | HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR |
文件: | 总10页 (文件大小:421K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005S
General Description
Features
The APT13005S is a high voltage, high speed, high
efficiency switching transistor, and it is specially
designed for off-line switch mode power supplies with
low output power.
·
High Switching Speed
High Collector-Emitter Voltage: 700V
Low Cost
·
·
·
High Efficiency
The APT13005S is available in TO-220F-3, TO-126
and TO-251 packages.
Applications
·
Battery Chargers for Mobile Phone of BCD Solu-
tion
·
·
Power Supply for DVD/STB of BCD Solution
Driver for LED Lighting of BCD Solution
TO-251
TO-220F-3
TO-126
Figure 1. Package Types of APT13005S
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
1
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005S
Pin Configuration
U Package
(TO-126)
3
Emitter
Collector
Base
2
1
TF Package
(TO
-220F-3)
3
2
1
Emitter
Collector
Base
I Package
(TO
-251)
3
2
1
Emitter
Collector
Base
Figure 2. Pin Configuration of APT13005S (Front View)
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
2
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005S
Ordering Information
APT13005S
-
Circuit Type
E1: Lead Free
G1: Green
Package
U: TO-126
TF: TO-220F-3
I: TO-251
Blank: Tube
Part Number
Marking ID
Package
Packing Type
Lead Free
Lead Free
Green
Green
GU13005S
TO-126
APT13005SU-E1
APT13005SU-G1
EU13005S
Tube
Tube
Tube
TO-220F-3 APT13005STF-E1 APT13005STF-G1 APT13005STF-E1
TO-251 APT13005SI-E1 APT13005SI-G1 APT13005SI-E1
APT13005STF-G1
APT13005SI-G1
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage (VBE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Breakdown Voltage (IC=0)
Collector Current
VCES
VCEO
VEBO
IC
700
450
9
V
V
V
A
A
A
A
3.2
6.4
1.6
3.2
28
Collector Peak Current
ICM
IB
Base Current
Base Peak Current
IBM
TO-220F-3
Power Dissipation, TC=25oC
PTOT
W
TO-251
TO-126
25
20
oC
oC
Operating Junction Temperature
Storage Temperature Range
TJ
150
TSTG
-55 to 150
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
3
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005S
Thermal Characteristics
Parameter
Symbol
Condition
Value
Unit
TO-220F-3
TO-251
4.5
oC/W
θJC
Maximum Thermal Resistance
Junction to Case
5.0
TO-126
6.25
Electrical Characteristics
o
( T =25 C, unless otherwise specified.)
C
Parameter
Symbol
Condition
VCE=700V
Min
Typ
Max
Unit
Collector Cut-off Current
(VBE=-1.5V)
ICEV
10
µA
Collector-Emitter Sustaining
Voltage (IB=0) (Note 2)
VCEO (sus)
IC=100µA
450
V
V
0.3
IC=1.0A, IB=0.2A
Collector-Emitter Saturation
Voltage
V
CE(sat)
IC=2.0A, IB=0.5A
IC=3.0A, IB=0.75A
IC=1.0A, IB=0.2A
IC=2.0A, IB=0.5A
0.6
1.0
1.2
1.4
Base-Emitter Saturation
Voltage
VBE(sat)
V
IC=1.0A, VCE=5.0V
IC=2.0A, VCE=5.0V
15
8
35
35
hFE
DC Current Gain (Note 2)
Turn-on Time with Resistive Load
Storage Time with Resistive Load
Fall Time with Resistive Load
Output Capacitance
ton
ts
0.7
4.5
0.8
µs
µs
IC=2.0A, VCC=125V
I
B1=0.4A, IB2=-0.4A
tf
µs
COB
fT
VCB=10V, f=0.1MHz
VCE=10V, IC=0.5A
35
pF
Current Gain Bandwidth Product
4
MHz
Note 2: Pulse test for Pulse Width≤ 300µs, Duty Cycle ≤ 2%.
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
4
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005S
Typical Performance Characteristics
10
10
DC
DC
1
1
0.1
0.01
0.1
0.01
TC=25oC
100
TC=25oC
1
10
1000
1
10
100
1000
Collector-Emitter Clamp Voltage VCE(V)
Collector-Emitter Clamp Voltage VCE(V)
Figure 3. Safe Operating Areas
(TO-220F-3 Package)
Figure 4. Safe Operating Areas
(TO-251 Package)
125
100
75
50
25
0
10
DC
1
0.1
0.01
TC=25oC
0
25
50
75
100
125
150
175
200
1
10
100
1000
Case Temperature (oC)
Collector-Emitter Clamp Voltage VCE(V)
Figure 5. Safe Operating Areas
(TO-126 Package)
Figure 6. Power Derating Curve
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
5
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005S
Typical Performance Characteristics (Continued)
50
45
40
35
30
25
20
15
10
5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
IB=450mA
IB=400mA
IB=350mA
IB=500mA
VCE=5V
TJ=125oC
IB=300mA
IB=250mA
IB=200mA
TJ=25oC
IB=150mA
IB=100mA
IB=50mA
IB=20mA
0
0.01
0.1
1
0
1
2
3
4
5
6
7
Collector Current IC(A)
Collector-Emitter Voltage VCE (V)
Figure 7. Static Characterstics
Figure 8. DC Current Gain
1
1.2
HFE=4
HFE=4
1.1
1.0
0.9
0.8
0.7
0.6
0.5
TJ=125oC
TJ=25oC
TJ=25oC
0.1
TJ=125oC
0.01
0.1
1
10
0.1
1
10
Collector Current IC(A)
Collector Current IC(A)
Figure 9. Collector-Emitter Saturation Region
Figure 10. Base-Emitter Saturation Voltage
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005S
Mechanical Dimensions
TO-126
Unit: mm(inch)
2.400(0.094)
7.400(0.291)
8.200(0.323)
2.900(0.114)
1.060(0.042)
1.500(0.059)
3.100(0.122)
3.550(0.140)
Φ
1.170(0.046)
1.470(0.058)
0.660(0.026)
0.860(0.034)
0.400(0.016)
0.600(0.024)
2.280(0.090)
TYP
4.560(0.180)
TYP.
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
7
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005S
Mechanical Dimensions (Continued)
TO-220F-3
Unit: mm(inch)
9.700(0.382)
10.300(0.406)
3.000(0.119)
3.400(0.134)
6.900(0.272)
7.100(0.280)
2. 3 5 0( 0 . 0 9 3)
2. 9 0 0( 0 . 1 1 4)
3.000(0.119)
3.550(0.140)
Φ
3.370(0.133)
3.900(0.154)
14.700(0.579)
16.000(0.630)
4. 300(0. 169)
4. 900(0. 193)
1. 000(0. 039)
1. 400(0. 055)
2.520(0.099)
2.920(0.115)
1.100(0.043)
1.500(0.059)
12.500(0.492)
13.500(0.531)
0. 550(0. 022)
0. 900(0. 035)
0.450(0.018)
0.600(0.024)
2.540(0.100)
2.540(0.100)
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
8
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005S
Mechanical Dimensions (Continued)
TO-251
Unit: mm(inch)
6.450(0.254)
6.750(0.266)
2.200 0.087
(
)
)
)
5.200(0.205
2.400 0.094
(
)
5.400(0.213
0.450(0.018
)
(
0.550 0.022
)
0.640(0.025)
)
0.740(0.029
0. 450(0.018)
0. 550(0.022)
2.240(0.088 )
2.340(0.092)
)
4.430 (0.174
0.950(0.037)
1.150(0.045)
(
)
4.730 0.186
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
9
BCD Semiconductor Manufacturing Limited
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