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APT13005T-E1 [BCDSEMI]

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR; 高压快速开关NPN功率晶体管
APT13005T-E1
型号： APT13005T-E1
厂家： BCD SEMICONDUCTOR MANUFACTURING LIMITED    BCD SEMICONDUCTOR MANUFACTURING LIMITED
描述：

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
高压快速开关NPN功率晶体管

晶体 开关 晶体管 高压
文件： 总10页 (文件大小：459K)
中文：  中文翻译
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Data Sheet  
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR  
APT13005  
General Description  
Features  
The APT13005 series are high voltage, high speed,  
high efficiency switching transistor, and it is specially  
designed for off-line switch mode power supplies with  
low output power.  
·
High Switching Speed  
High Collector-Emitter Voltage: 700V  
Low Cost  
·
·
·
High Efficency  
The APT13005 series is available in TO-220-3, TO-  
220-3(2), and TO-220F-3 packages.  
Applications  
·
·
Battery Chargers for Mobile Phone  
Power Supply for DVD/STB  
TO-220F-3  
TO-220-3  
TO-220-3(2)  
Figure 1. Package Types of APT13005  
Aug. 2010 Rev 1. 1  
BCD Semiconductor Manufacturing Limited  
1
Data Sheet  
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR  
APT13005  
Pin Configuration  
T Package  
(TO-220-3)  
(TO-220-3(2))  
Emitter  
3
2
1
Emitter  
3
2
1
Collector  
Base  
Collector  
Base  
TF Package  
(TO-220F-3)  
Emitter  
3
2
1
Collector  
Base  
Figure 2. Pin Configuration of APT13005(front view)  
Collector  
Base  
Emitter  
Figure 3. Internal Structure of APT13005  
Aug. 2010 Rev 1. 1  
BCD Semiconductor Manufacturing Limited  
2
Data Sheet  
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR  
APT13005  
Ordering Information  
APT13005  
-
Circuit Type  
Package  
E1: Lead Free  
G1: Green  
Blank: Tube  
T: TO-220-3/TO-220-3(2)  
TF: TO-220F-3  
Part Number  
Marking ID  
Package  
Packing Type  
Lead Free  
Lead Free  
APT13005T-E1  
APT13005TF-E1  
Green  
Green  
APT13005T-G1  
APT13005TF-G1  
TO-220-3/  
TO-220-3(2)  
APT13005T-E1  
APT13005T-G1  
APT13005TF-G1  
Tube  
Tube  
TO-220F-3 APT13005TF-E1  
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with  
D
"G1" suffix are available in green packages.  
Absolute Maximum Ratings (Note 1)  
D
D
DD  
Parameter  
Symbol  
Value  
Unit  
Collector-Emitter Voltage (VBE=0)  
Collector-Emitter Voltage (IB=0)  
Emitter-Base Breakdown Voltage (IC=0)  
Collector Current  
VCES  
VCEO  
VEBO  
IC  
700  
450  
9
V
V
V
A
A
A
A
4
Collector Peak Current  
Base Current  
ICM  
IB  
8
2
Base Peak Current  
IBM  
4
TO-220-3/  
75  
Power Dissipation, TC=25oC  
TO-220-3 (2)  
PTOT  
W
TO-220F-3  
28  
150  
oC  
oC  
Operating Junction Temperature  
Storage Temperature Range  
-65 to 150  
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.  
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated  
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods  
may affect device reliability.  
Aug. 2010 Rev 1. 1  
BCD Semiconductor Manufacturing Limited  
3
Data Sheet  
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR  
APT13005  
Thermal Characteristics  
Parameter  
Symbol  
Condition  
Value  
Unit  
TO-220-3/  
TO-220-3(2)  
1.67  
oC/W  
θJC  
Maximum Thermal Resistance  
Junction to Case  
TO-220F-3  
4.5  
Electrical Characteristics  
o
( T =25 C, unless otherwise specified.)  
C
Parameter  
Symbol  
Conditions  
VCE=700V  
Min  
Typ  
Max  
Unit  
Collector Cut-off Current  
(VBE=-1.5V)  
ICEV  
10  
µA  
Collector-Emitter Sustaining  
Voltage (IB=0) (Note 2)  
VCEO (sus)  
IC=100µA  
450  
V
V
0.3  
IC=1.0A, IB=0.2A  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
IC=2.0A, IB=0.5A  
IC=4.0A, IB=1.0A  
IC=1.0A, IB=0.2A  
IC=2.0A, IB=0.5A  
0.6  
0.9  
1.1  
1.3  
Base-Emitter Saturation  
Voltage  
V
BE(sat)  
V
IC=1.0A, VCE=5.0V  
IC=2.0A, VCE=5.0V  
15  
8
35  
35  
hFE  
DC Current Gain (Note 2)  
Turn -on Time with Resistive Load  
Storage Time with Resistive Load  
Fall Time with Resistive Load  
Output Capacitance  
ton  
ts  
0.8  
4.5  
0.9  
µs  
µs  
IC=2A, VCC=125V  
IBI=0.4A, IB2=-0.4V  
tf  
µs  
COB  
fT  
VCB=10V, f=0.1MHz  
VCE=10V, IC=0.5A  
45  
pF  
Current Gain Bandwidth Product  
4
MHz  
Note 2: Pulse test for Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.  
Aug. 2010 Rev 1. 1  
BCD Semiconductor Manufacturing Limited  
4
Data Sheet  
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR  
APT13005  
Typical Performance Characteristics  
10  
10  
DC  
DC  
1
1
0.1  
0.1  
TC=25oC  
TC=25oC  
0.01  
0.01  
1
10  
100  
1000  
1
10  
100  
1000  
Collector-Emitter clamp Voltage VCE(V)  
Collector-Emitter clamp Voltage VCE(V)  
D
Figure 4. Safe Operating Areas  
Figure 5. Safe Operating Areas (TO-220F-3 Package)  
D
DD  
(TO-220-3/TO-220-3(2) Package)  
4.5  
125  
100  
75  
50  
25  
0
IB=500mA  
IB=450mA  
Α
Α
Α
Α
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Α
IB=400mA  
Α
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IB=350mA  
IB=300mA  
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IB=250mA  
IB=200mA  
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IB=150mA  
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IB=100mA  
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IB=50mA  
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0
25  
50  
75  
100  
125  
150  
175  
200  
0
1
2
3
4
5
6
7
8
Case Temperature(oC)  
Collector-Emitter Voltage VCE(V)  
Figure 6. Power Derating Curve  
Figure 7. Static Characterstics  
Aug. 2010 Rev 1. 1  
BCD Semiconductor Manufacturing Limited  
5
Data Sheet  
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR  
APT13005  
Typical Performance Characteristics (Continued)  
40  
1
HFE=4  
TJ=125oC  
TJ=25oC  
35  
30  
25  
20  
15  
10  
5
VCE=5V  
TJ=125oC  
TJ=25oC  
0.1  
0
0.01  
0.01  
0.1  
1
10  
0.1  
1
10  
Collector Current IC(A)  
Collector Current IC(A)  
Figure 9. Collector-Emitter Saturation Region  
Figure 8. DC Current Gain  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
HFE=4  
TJ=25oC  
TJ=125oC  
0.1  
1
10  
Collector Current IC(A)  
Figure 10. Base-Emitter Saturation Voltage  
Aug. 2010 Rev 1. 1  
BCD Semiconductor Manufacturing Limited  
6
Data Sheet  
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR  
APT13005  
Mechanical Dimensions  
TO-220-3  
Unit: mm(inch)  
9.660(0.380)  
2.580(0.102)  
3.380(0.133)  
10.660(0.420)  
φ3.560(0.140)  
4.060(0.160)  
0.550(0.022)  
1.350(0.053)  
0.200(0.008)  
φ1.500(0.059)  
3.560(0.140)  
4.820(0.190)  
2.080(0.082)  
2.880(0.113)  
7°  
0.381(0.015)  
1.160(0.046)  
1.760(0.069)  
60°  
0.813(0.032)  
8.763(0.345)  
0.381(0.015)  
2.540(0.100)  
0.356(0.014)  
0.406(0.016)  
2.540(0.100)  
Aug. 2010 Rev 1. 1  
BCD Semiconductor Manufacturing Limited  
7
Data Sheet  
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR  
APT13005  
Mechanical Dimensions (Continued)  
TO-220-3 (2)  
Unit: mm(inch)  
9.800(0.386)  
10.200(0.402)  
∅
3.560(0.140)  
3.640(0.143)  
1.700(0.067)  
0.600(0.024)  
1.300(0.051)  
1.300(0.051)  
4.500(0.177)  
2.400(0.094)  
3°  
3°  
1.270(0.050)  
0.700(0.028)  
0.900(0.035)  
0.400(0.016)  
0.600(0.024)  
2.540(0.100)  
2.540(0.100)  
Aug. 2010 Rev 1. 1  
BCD Semiconductor Manufacturing Limited  
8
Data Sheet  
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR  
APT13005  
Mechanical Dimensions (Continued)  
TO-220F-3  
Unit: mm(inch)  
9.700(0.382)  
10.300(0.406)  
3.000(0.119)  
3.400(0.134)  
6.900(0.272)  
7.100(0.280)  
∅
ٛ
2.350(0.093)  
2.900(0.114)  
3.000(0.119)  
3.550(0.140)  
3.370(0.133)  
3.900(0.154)  
14.700(0.579)  
16.000(0.630)  
4.300(0.169)  
4.900(0.075)  
1.000(0.039)  
1.400(0.055)  
1.100(0.043)  
1.500(0.059)  
12.500(0.492)  
13.500(0.531)  
0.550(0.022)  
0.900(0.035)  
0.450(0.018)  
0.600(0.024)  
2.540(0.100)  
2.540(0.100)  
Aug. 2010 Rev 1. 1  
BCD Semiconductor Manufacturing Limited  
9
BCD Semiconductor Manufacturing Limited  
http://www.bcdsemi.com  
- Headquarters  
- Wafer Fab  
BCD Semiconductor Manufacturing Limited  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.  
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China  
800 Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-24162266, Fax: +86-21-24162277  
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008  
REGIONAL SALES OFFICE  
Shenzhen Office  
Taiwan Office  
USA Office  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office  
BCD Semiconductor (Taiwan) Company Limited  
BCD Semiconductor Corp.  
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,  
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,  
30920 Huntwood Ave. Hayward,  
China  
Taiwan  
Tel: +886-2-2656 2808  
CA 94544, USA  
Tel: +86-755-8826 7951  
Tel : +1-510-324-2988  
Fax: +86-755-8826 7865  
Fax: +886-2-2656 2806  
Fax: +1-510-324-2788  

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