MBR20H100CT-E1 [BCDSEMI]
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER; 高压功率肖特基整流器
| 型号： | MBR20H100CT-E1 |
| 厂家： | 
BCD SEMICONDUCTOR MANUFACTURING LIMITED |
| 描述： | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| 文件： | 总11页 (文件大小：635K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20H100C
General Description
Main Product Characteristics
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters. This
device is intended for use in medium voltage opera-
tion, and particularly, in high frequency circuits where
low switching losses and low noise are required.
IF (AV)
VRRM
TJ
2×10A
100V
175oC
0.64V
VF (max)
MBR20H100C is available in TO-220F-3, TO-220-3
and TO-220-3 (2) packages.
Mechanical Characteristics
Features
·
·
Case: Epoxy, Molded
Low Forward Voltage: 0.64V @ 125oC
High Surge Capacity
·
·
Epoxy Meets UL 94V-0 @ 0.125in.
Weight (Approximately):
·
·
·
·
·
o
2Grams (TO-220-3, TO-220-3 (2) and
TO-220F-3)
175 C Operating Junction Temperature
20A Total (10A Each Diode Leg)
Guard-ring for Stress Protection
Pb-free Package
·
Finish: All External Surfaces Corrosion Resistant
and Terminal
·
·
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
o
260 C Maximum for 10 Seconds
Applications
·
·
·
Power Supply Output Rectification
Power Management
Instrumentation
TO-220F-3
TO-220-3 (Optional)
TO-220-3(2)
Figure 1. Package Types of MBR20H100C
Mar. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
1
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20H100C
Pin Configuration
T Package
(TO-220-3) (Optional)
(TO-220-3 (2))
A2
K
3
2
1
A2
K
3
2
1
A1
A1
TF Package
(TO-220F-3)
3
2
1
A2
K
A1
Figure 2. Pin Configuration of MBR20H100C (Top View)
A1
K
A2
Figure 3. Internal Structure of MBR20H100C
Mar. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20H100C
Ordering Information
MBR20H100C
-
E1: Lead Free
G1: Green
Circuit Type
Package
Blank: Tube
T: TO-220-3 (2)
TO-220-3 (Optional)
TF: TO-220F-3
Part Number
Marking ID
Packing
Type
Package
Lead Free
TO-220-3 (2) MBR20H100CT-E1
TO-220F-3 MBR20H100CTF-E1 MBR20H100CTF-G1 MBR20H100CTF-E1 MBR20H100CTF-G1
Lead Free
Green
Green
MBR20H100CT-G1 MBR20H100CT-E1 MBR20H100CT-G1
Tube
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Mar. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20H100C
Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
IF (AV)
IFRM
IFSM
10
20
A
A
(Rated V ) TC=162oC
R
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20kHz) TC=160oC
Non Repetitive Peak Surge Current (Surge Applied at Rated load
Conditions Half Wave, Single Phase, 60Hz)
250
A
oC
Operating Junction Temperature (Note 2)
Storage Temperature Range
TJ
175
oC
TSTG
dv/dt
-65 to 175
10000
Voltage Rate of Change (Rated VR)
V/µs
ESD (Machine Model=C)
>400
V
V
ESD (Human Body Model=3B)
>8000
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ<1/θJA
.
Thermal Characteristics
Parameter
Symbol
Condition
Value
Unit
TO-220-3/
TO-220-3 (2)
2.0
θJC
Junction to Case
oC/W
Maximum Thermal Resistance
TO-220F-3
2.5
60
TO-220-3/
TO-220-3 (2)
θJA
Junction to Ambient
Mar. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20H100C
Electrical Characteristics (Each Diode Leg)
Parameter
Symbol
Condition
IF=10A, TC=25oC
Value
Unit
0.77
0.64
0.88
0.73
IF=10A, TC=125oC
Maximum Instantaneous Forward
Voltage Drop (Note 3)
VF
V
IF=20A, TC=25oC
IF=20A, TC=125oC
Rated DC Voltage, TC=125oC
6.0
Maximum Instantaneous Reverse
Current (Note 3)
IR
mA
Rated DC Voltage, TC=25oC
0.0045
Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%.
Mar. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20H100C
Typical Performance Characteristics
100
10
1
25oC
0.1
0.01
125oC
150oC
175oC
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VF, Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Voltage
0.01
1E-3
1E-4
1E-5
1E-6
1E-7
1E-8
1E-9
25oC
125oC
150oC
175oC
20
40
60
80
100
VR, Reverse Voltage (V)
Figure 5. Typical Reverse Current
Mar. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20H100C
Typical Performance Characteristics (Continued)
10000
1000
100
TJ=25oC
10
20
40
60
80
100
VR, Reverse Voltage (V)
Figure 6. Capacitance vs. VR, Reverse Voltage
14
12
10
8
Square
6
4
2
0
100
110
120
130
140
150
160
170
180
Case Temperature (oC)
Figure 7. Average Forward Current vs. Case Temperature (Square, Each Diode)
Mar. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20H100C
Mechanical Dimensions
TO-220-3
Unit: mm(inch)
(Optional)
9.660(0.380)
2.580(0.102)
3.380(0.133)
10.660(0.420)
φ3.560(0.140)
4.060(0.160)
0.550(0.022)
1.350(0.053)
0.200(0.008)
φ1.500(0.059)
3.560(0.140)
4.820(0.190)
2.080(0.082)
2.880(0.113)
7°
0.381(0.015)
1.160(0.046)
1.760(0.069)
60°
0.813(0.032)
8.763(0.345)
0.381(0.015)
2.540(0.100)
0.356(0.014)
0.406(0.016)
2.540(0.100)
Mar. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20H100C
Mechanical Dimensions (Continued)
TO-220-3 (2)
Unit: mm(inch)
9.800(0.386)
10.200(0.402)
3.560(0.140)
3.640(0.143)
∅
1.620(0.064)
1.820(0.072)
0.600(0.024)
REF
1.200(0.047)
1.400(0.055)
1.200(0.047)
1.400(0.055)
4.400(0.173)
4.600(0.181)
2.200(0.087)
2.500(0.098)
3°
3
°
3.000(0.118)
1.170(0.046)
1.390(0.055)
REF
0.700(0.028)
0.900(0.035)
0.400(0.016)
0.600(0.024)
2.540(0.100)
REF
2.540(0.100)
REF
Mar. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
9
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20H100C
Mechanical Dimensions (Continued)
TO-220F-3
Unit: mm(inch)
9.700(0.382)
10.300(0.406)
3.000(0.119)
3.400(0.134)
6.900(0.272)
7.100(0.280)
2.350(0.093)
2.900(0.114)
ٛ
∅
3.000(0.119)
3.550(0.140)
3.370(0.133)
3.900(0.154)
14.700(0.579)
16.000(0.630)
4.300(0.169)
4.900(0.193)
1.000(0.039)
1.400(0.055)
1.100(0.043)
1.500(0.059)
12.500(0.492)
13.500(0.531)
0.550(0.022)
0.900(0.035)
0.450(0.018)
0.600(0.024)
2.540(0.100)
2.540(0.100)
Mar. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
10
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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- Wafer Fab
BCD Semiconductor Manufacturing Limited
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
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相关型号：
MBR20H100CT-HE3/45
DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
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