MBR2150VRTR-G1 [BCDSEMI]
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER; 高压功率肖特基整流器
| 型号： | MBR2150VRTR-G1 |
| 厂家： | 
BCD SEMICONDUCTOR MANUFACTURING LIMITED |
| 描述： | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| 文件： | 总7页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR2150
Main Product Characteristics
General Description
IF(AV)
VRRM
The MBR2150 is a high voltage dual Schottky
rectifier suited for switch mode power supplies and
other power converters. This device is intended for
use in medium voltage operation, and particularly, in
high frequency circuits where low switching losses
and low noise are required.
2A
150V
150°C
TJ(MAX)
VF(MAX)
(IF=2A, TC=125°C)
0.67V
The MBR2150 is available in standard DO-214AC
and DO-15 packages.
Mechanical Characteristics
•
•
•
•
Case: Epoxy, Molded
Features
Epoxy Meets UL 94V-0 @ 0.125in
Weight (Approximately): 1.9Grams
Finish: All External Surfaces Corrosion
Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purpose:
260°C Maximum for 10 Seconds
•
•
•
•
•
Low Forward Voltage: 0.67V at 125°C
High Surge Capacity
Operating Junction Temperature: 150°C
Guard−ring for Stress Protection
Lead Free Packages Available
•
•
Applications
•
•
•
Power Supply − Output Rectification
Power Management
Instrumentation
DO-214AC
DO-15
Figure 1. Package Types of MBR2150
Jul. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
1
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR2150
Pin Configuration
VR Package
(DO-214AC)
VG Package
(DO-15)
Cathode line by
marking
Cathode line
by marking
Cathode
Anode
Cathode
Anode
Figure 2. Pin Configuration of MBR2150 (Top View)
Ordering Information
MBR2150
-
E1: Lead Free
G1: Green
Circuit Type
Package
VR: DO-214AC
VG: DO-15
Blank: Bulk
TR: Ammo and Tape & Reel
Part Number
Lead Free
Marking ID
Packing
Package
Lead
Type
Green
Green
Free
DO-214AC MBR2150VRTR-E1
MBR2150VRTR-G1
MBR2150VG-G1
2150VE
2150VR
2150GG
2150GG
Tape & Reel
Bulk
MBR2150VG-E1
DO-15
2150VG
2150VG
MBR2150VGTR-E1
MBR2150VGTR-G1
Ammo
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Jul. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
2
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR2150
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
150
V
Average Rectified Forward Current (Rated VR, TC=TBD)
IF(AV)
2
A
A
Non Repetitive Peak Surge Current (Surge Applied at Rated
Load Conditions Half Wave, Single Phase, 60Hz)
IFSM
75
Operating Junction Temperature Range (Note 2)
Storage Temperature Range
TJ
-65 to 150
-65 to 150
°C
°C
TSTG
dv/dt
Voltage Rate of Change (Rated VR)
ESD (Machine Model=C)
10000
400
V/μs
V
ESD (Human Body Model=3B)
8000
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ <
1/θJA.
Recommended Operating Conditions
Parameter
Symbol
Condition
Value
Unit
DO-214AC
Junction to Lead
23
θJL
DO-15
Maximum1Thermal
Resistance
°C/W
DO-214AC
DO-15
90
80
Junction1to1Ambient
θJA
Jul. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
3
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR2150
Electrical Characteristics
Parameter
Symbol
Conditions
Value
Unit
Maximum Instantaneous Forward
Voltage Drop (Note 3)
0.85
IF=2A, TC=25°C
IF=2A, TC=125°C
V
VF (MAX)
0.67
Rated
TC=25°C
DC
Voltage,
Voltage,
0.1
2.0
Maximum Instantaneous Reverse
Current (Note 3)
mA
IR (MAX)
Rated
TC=125°C
DC
Note 3: Pulse Test: Pulse Width=300μs, Duty Cycle≤2.0%.
Typical Performance Characteristics
10
TJ=150oC
103
102
101
100
10-1
10-2
10-3
TJ=125oC
1
TJ=25oC
TJ=125oC
TJ=150oC
0.1
TJ=25oC
0.01
0
20
40
60
80
100
120
140
160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VR, Instantaneous Reverse Voltage (V)
VF, Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Characteristics
Figure 5. Typical Reverse Characteristics
Jul. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
4
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR2150
Mechanical Dimensions
DO-214AC
Unit: mm(inch)
Jul. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
5
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR2150
Mechanical Dimensions (Continued)
DO-15
Unit: mm(inch)
Jul. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
6
BCD Semiconductor Manufacturing Limited
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