AMMC-6530-W50 [BOARDCOM]
5â30 GHz Image Reject Mixer;
| 型号： | AMMC-6530-W50 |
| 厂家： | 
Broadcom Corporation. |
| 描述： | 5â30 GHz Image Reject Mixer |
| 文件： | 总8页 (文件大小：785K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AMMC-6530
5–30 GHz Image Reject Mixer
Vg
drain
Data Sheet
IF1
IF2
Vg
gate
Chip Size: 1300 x 1400 µm
Chip Size Tolerance: 10 µm ( 0.4 mils)
Chip Thickness: 100 10 µm (4 0.4 mils)
Description
Features
• Broad Band Performance 5–30 GHz
• Low Conversion Loss of 8 dB
• High Image Rejection of 15–20 dB
• Good 3rd Order Intercept of +18 dBm
• Single -1V, no current Supply Bias
Avago’s AMMC-6530 is an image reject mixer that
operates from 5 to 30 GHz. The cold channel FET mixer
is designed to be an easy-to-use component for any
chip and wire application. It can be used drain pumped
for low conversion loss applications, or when gate
pumped the mixer can provide high linearity for SSB
up-conversion. An external 90-degree hybrid is used
to achieve image rejection and a -1V voltage reference
is needed. Intended applications include microwave
radios, 802.16, VSAT, and satellite receivers. Since this
one mixer can cover several bands, the AMMC-6530
can reduce part inventory. The integrated mixer elimi-
nates complex tuning and assembly processes typically
required by hybrid (discrete-FET or diode) mixers. For
improved reliability and moisture protection, the die is
passivated at the active areas.
Applications
• Microwave Radio Systems
• Satellite VSAT, DBS Up/Down Link
• LMDS & Pt-Pt mmW Long Haul
• Broadband Wireless Access (including 802.16 and
802.20 WiMax)
• WLL and MMDS loops
Absolute Maximum Ratings[1]
Symbol Parameters/Conditions
Units
Min.
Max.
Vg
Gate Supply Voltage
V
0
-3
Pin
CW Input Power
dBm
°C
25
Tch
Tstg
Tmax
Operating Channel Temperature
Storage Case Temperature
Max. Assembly Temp (60 sec max)
+150
+150
+300
°C
-65
°C
Note:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
AMMC-6530 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Typ.
Ig
Gate Supply Current
mA
0
(under any RF power drive and temperature)
Vg
Gate Supply Operating Voltage
V
-1V
Note:
1. Ambient operational temperature TA=25°C unless otherwise noted.
AMMC-6530 Typical Performance[2, 3] (TA= 25°C, Vg= -1V, IF frequency = 1 GHz, Zo=50 Ω)
Symbol
Parameters and Test Conditions
Units
Gate Pumped
Drain Pumped
FRF
FLO
FIF
RF Frequency Range
LO Frequency Range
IF Frequency Range
GHz
GHz
GHz
5 – 30
5 – 30
DC – 5
5 – 30
5 – 30
DC – 5
Down Conversion
Up Conversion
Down Conversion
PLO
LO Port Pumping Power
RF to IF Conversion Gain
RF Port Return Loss
dBm
dB
>10
-10
5
>0
-15
5
>10
-8
CG
RL_RF
RL_LO
RL_IF
IR
dB
10
5
LO Port Return Loss
IF Port Return Loss
dB
10
10
15
22
25
15
18
10
10
15
25
25
15
—
dB
10
15
22
25
15
10
Image Rejection Ratio
LO to RF Port Isolation
LO to IF Port Isolation
RF to IF Port Isolation
dB
LO-RF Iso.
LO-IF Iso.
RF-IF Iso.
IIP3
dB
dB
dB
Input IP3, Fdelta=100 MHz,
Prf = -10 dBm, Plo = 15 dBm
dBm
P-1
Input Port Power at 1dB gain
compression point, Plo=+10 dBm
dBm
dB
8
—
—
0
NF
Noise Figure
10
12
Notes:
2. Small/Large signal data measured in a fully de-embedded test fixture form TA = 25°C.
3. Specifications are derived from measurements in a 50Ω test environment.
AMMC-6530 RF Specifications in Drain Pumped Test Configuration[4, 5, 6]
(TA= 25°C, Vg= -1.0V, PLO= +10 dBm, Zo =50 Ω)
Symbol
Parameters and Test Conditions
Units
Min
Typ.
Max
CG
Conversion Gain
f = 7 GHz
f = 18 GHz
f = 28 GHz
dB
dB
dB
-12.0
-10.0
-12.5
-10.5
-8.0
-10.0
IR
Image Rejection Ratio
dB
-23.5 -18
Notes:
4. Performance verified 100% on-wafer.
5. 100% on-wafer RF testing is done at RF frequency = 7, 18, and 28 GHz; IF frequency = 2 GHz.
6. The external 90 degree hybrid coupler is from M/A-COM: PN 2032-6344-00. Frequency 1.0–
2.0 GHz.
2
AMMC-6530 Typical Performance under Gate Pumped Down Conversion Operation
(TA = 25°C, Vg = -1V, Zo = 50Ω)
RF
Vg
drain
LSB
USB
IF1
IF2
gate
Vg
Note: The external 90° hybrid coupler is from M/A-
COM: PN 2032-6344-00. Frequency is 1.0 – 2.0 GHz.
-1V
LO
Highly linear down conversion or up conversion mixer application (Gate pumped mixer operation)
0
-5
0
-5
15
10
5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-10
-15
-20
-25
-30
-35
-40
-45
-50
0
USB(dB)
LSB(dB)
USB(dB)
LSB(dB)
-5
5
10
15
20
25
30
5
10
15
20
25
30
5
10
15
20
25
30
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 2. Conversion Gain with IF
terminated for Low Side Conversion
LO=+10 dBm, IF=1 GHz.
Figure 1. Conversion Gain with IF
terminated for High Side Conversion
LO=+10 dBm, IF=1 GHz.
Figure 3. RF Port Input Power P-1dB.
LO=+10 dBm, IF=1 GHz.
25
20
15
10
20
15
10
5
0
-5
-10
-15
-20
-25
Plo=15(dBm)
Plo=10(dBm)
5
0
5
10
15
20
25 30
5
10
15
20
25
30
-10
-5
0
5
10
15
20
FREQUENCY (GHz)
FREQUENCY (GHz)
LO POWER (dBm)
Figure 5. Input 3rd Order Intercept Point.
IF=1 GHz.
Figure 4. Noise Figure.
LO=+7 dBm, IF=1 GHz.
Figure 6. Conversion Gain vs. LO Power.
RF=21 GHz (-20 dBm), LO=20 GHz.
3
AMMC-6530 Typical Performance under Gate Pumped Down Conversion Operation
(TA = 25°C, Vg = -1V, Zo=50Ω
)
0
0
-5
-5
-10
-15
-10
-15
-20
Conv. Gain (dB)
Return Loss (dB)
-20
0
1
2
3
4
5
6
-2
-1.5
-1
-0.5
FREQUENCY (GHz)
Vg (V)
Figure 7. Conversion Gain and Match vs.
IF Frequency. RF=20 GHz, LO=10 dBm.
Figure 8. Conversion Gain vs. Gate Voltage.
RF=20 GHz, LO=10 dBm.
0
60
50
40
30
RF
LO
-5
-10
-15
-20
20
RF-IF
LO-IF
LO-RF
10
0
0
5
10
15
20
25
30
5
10
15
20
25
30
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 9. RF & LO Return Loss. LO=10 dBm.
Figure 10. Isolation. LO=+10 dBm, IF=1 GHz.
4
AMMC-6530 Typical Performance under Gate Pumped Up Conversion Operation
(TA = 25°C, Vg = -1V, Zo=50Ω
)
LO
-1V
Vg
gate
LSB
USB
IF2
IF1
drain
Vg
RF
0
-5
0
USB (dB)
LSB (dB)
USB (dB)
-5
LSB (dB)
-10
-10
-15
-20
-25
-30
-35
-40
-45
-15
-20
-25
-30
-35
-40
-45
-50
-50
5
10
15
20
25
30
5
10
15
20
25
30
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Up-conversion Gain wth IF
terminated for High Side Conversion.
LO=+5 dBm, IF=+5 dBm, IF=1 GHz.
Figure 11. Up-conversion Gain with IF
terminated for Low Side Conversion.
LO=+5 dBm, IF=+5 dBm, IF=1 GHz.
0
-5
-5
-7
-10
-15
-20
-25
-30
-35
-40
-9
-11
-13
-15
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20
FREQUENCY (GHz)
PLO=PIF (dB)
Figure 13. LO-RF Up-conversion Isolation.
Figure 14. Up-conversion Gain vs. Pumping
Power. LO power=IF power, IF=1 GHz,
RF=25 GHz.
5
AMMC-6530 Typical Performance under Drain Pumped Down Conversion Operation
(TA = 25°C, Vg = -1V, Zo = 50Ω
)
LO
Vg
drain
USB
LSB
IF1
IF2
gate
Vg
Note: The external 90° hybrid coupler is from M/A-
COM: PN 2032-6344-00. Frequency is 1.0 – 2.0 GHz.
RF
-1V
Low conversion loss mixer configuration (Drain pumped mixer operation)
0
-5
0
-5
15
10
5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-10
-15
-20
-25
-30
-35
-40
-45
-50
0
USB (dB)
LSB (dB)
USB(dBm)
LSB(dBm)
-5
5
10
15
20
25
30
5
10
15
20
25
30
5
10
15
20
25
30
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 15. Conversion Gain with IF
terminated for Low Side Conversion.
LO=+10 dBm, IF=1 GHz.
Figure 16. Conversion Gain with IF
terminated for High Side Conversion.
LO=+10 dBm, IF=1 GHz.
Figure 17. RF Port Input Power P-1dB.
LO=+10 dBm, IF=1 GHz.
25
0
-5
20
15
10
5
Plo=10(dBm)
Plo=15(dBm)
20
15
10
5
-10
-15
-20
-25
0
0
5
10
15
Flo (dB)
20
25
30
-10
-5
0
5
10
15
20
5
10
15
20
25
30
LO POWER (dBm)
FREQUENCY (GHz)
Figure 19. Input 3rd Order Intercept Point.
IF=1 GHz.
Figure 20. Conversion Gain vs. LO power.
RF=21 GHz (-20 dBm), LO=20 GHz.
Figure 18. Noise Figure. LO=+7 dBm, IF=1 GHz.
6
Biasing and Operation
The recommended DC bias condition for optimum
performance, and reliability is Vg = -1 volts. This can
be applied to either of the two Vg connections as they
are internally connected. There is no current consump-
tion for the gate biasing because the FET mixer was
designed for passive operation. For down conversion,
the AMMC-6530 may be configured in a low loss or high
linearity application. In a low loss configuration, the
LO is applied through the drain. In this configuration,
the AMMC-6530 is a “drain pumped mixer”. For higher
linearity applications, the LO is applied through the gate.
In this configuration, the AMMC-6530 is a “gate pumped
mixer” (or Resistive mixer). The mixer is also suitable for
up-conversion applications under the gate pumped
mixer operation shown on page 5.
Please note that the image rejection and isolation per-
formance is dependent on the selection of the low Figure 21. Simplified MMIC Schematic.
frequency quadrature hybrid. The performance speci-
fication of the low frequency quadrature hybrid as well
as the phase balance and VSWR of the interface to the
AMMC-6530 will affect the overall mixer performance.
Assembly Techniques
The backside of the MMIC chip is RF ground. For mi-
crostrip applications the chip should be attached directly
to the ground plane (e.g. circuit carrier or heatsink) using
electrically conductive epoxy[1, 2]
.
For best performance, the topside of the MMIC should be
brought up to the same height as the circuit surround-
ing it. This can be accomplished by mounting a gold
plate metal shim (same length and width as the MMIC)
under the chip which is of correct thickness to make the
chip and adjacent circuit the same height. The amount of
epoxy used for the chip and/or shim attachment should
be just enough to provide a thin fillet around the bottom
perimeter of the chip or shim. The ground plane should
be free of any residue that may jeopardize electrical or
mechanical attachment.
Figure 22. AMMC-6530 Bond Pad locations.
The location of the RF bond pads is shown in Figure
7
23. Note that all the RF input and output ports are in a
Ground-Signal-Ground configuration.
The chip is 100 µm thick and should be handled with
care.
RF connections should be kept as short as reasonable
This MMIC has exposed air bridges on the top surface
to minimize performance degradation due to undesir- and should be handled by the edges or with a custom
able series inductance. A single bond wire is normally collet (do not pick up the die with a vacuum on die
sufficient for signal connections, however double
bonding with 0.7 mil gold wire or use of gold mesh is
recommended for best performance, especially near the
high end of the frequency band. Thermosonic wedge
bonding is the preferred method for wire attachment to
the bond pads.
center).
This MMIC is also static sensitive and ESD precautions
should be taken.
Notes:
1. Ablebond 84-1 LM1 silver epoxy is recommended.
2. Eutectic attach is not recommended and may jeopardize reliability
of the device.
Gold mesh can be attached using a 2 mil round tracking
tool and a tool force of approximately 22 grams and a
ultrasonic power of roughly 55 dB for a duration of 76 8
mS. The guided wedge at an untrasonic power level of
64 dB can be used for 0.7 mil wire. The recommended
wire bond stage temperature is 150 2°C. Caution should
be taken to not exceed the Absolute Maximum Rating
for assembly temperature and time.
Part Number Ordering Information
Part Number
Devices per Container
AMMC-6530-W10
AMMC-6530-W50
10
50
Gnd
IF1
LO/RF
IF2
Vg
RF/LO
Figure 23. AMMC-6530 Assembly Diagram.
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2008 Avago Technologies. All rights reserved. Obsoletes 5989-3945EN
AV02-1293EN - July 30, 2008
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