ARE1-8F30-00000 [BOARDCOM]
High Power Infrared Emitting Diodes;
| 型号： | ARE1-8F30-00000 |
| 厂家： | 
Broadcom Corporation. |
| 描述： | High Power Infrared Emitting Diodes |
| 文件： | 总10页 (文件大小：853K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
ARE1-xxx0-00000
High Power Infrared Emitting Diodes
Features
Applications
Available in peak wavelengths: 850 nm and 940 nm
Infrared illumination for cameras
High radiant intensity
Surveillance systems
High radiant power
Low forward voltage
Typical viewing angles: 90° and 150°
Compatible with industrial reflow soldering process
MSL 3
Broadcom
ARE1-xxx0-DS100
October 30, 2018
ARE1-xxx0-00000 Data Sheet
High Power Infrared Emitting Diodes
Figure 1: Package Drawing
Viewing Angle 90° (ARE1-89x0, ARE1-99x0)
Viewing Angle 150° (ARE1-8Fx0, ARE1-9Fx0)
Cathode
Cathode
Anode
Anode
ESD
protection
device
ESD
protection
device
NOTE:
1. All dimensions in millimeters (mm).
2. Tolerance is ± 0.1 mm unless otherwise specified.
Broadcom
ARE1-xxx0-DS100
2
ARE1-xxx0-00000 Data Sheet
High Power Infrared Emitting Diodes
Device Selection Guide (T = 25°C, I = 1A)
J
F
Radiant Flux, Φe
Viewing Angle,
Radiant Intensity, Ie (mW/sr)a,b
2θ (°) d
(mW)c
½
Peak Wavelength,
peak (nm)
Part Number
Min.
Max.
Typ.
Typ.
ARE1-89C0-00000
ARE1-89D0-00000
ARE1-8930-00000
ARE1-8FC0-00000
ARE1-8FD0-00000
ARE1-8F30-00000
ARE1-99D0-00000
ARE1-9930-00000
ARE1-9F30-00000
850
850
850
850
850
850
940
940
940
160
250
630
100
150
200
160
320
160
450
600
1000
350
400
500
450
850
400
685
800
1340
630
800
1270
590
935
970
90
90
90
150
150
150
90
90
150
a. The radiant intensity, Ie is measured at the mechanical axis of the package and it is tested with a single current pulse condition (tp = 10 ms).
The actual peak of the spatial radiation pattern may not be aligned with the axis.
b. Tolerance is ±15%.
c. The radiant flux,Φe is the total flux output as measured with an integrating sphere at a single current pulse condition (tp = 10 ms).
d.
θ is the off-axis angle where the luminous intensity is half of the peak intensity.
½
Absolute Maximum Ratings
Parameters
DC Forward Currenta
ARE1-8xC0
1000
ARE1-8xD0
1000
ARE1-8x30
1000
ARE1-9xD0
1000
ARE1-9x30
1000
Units
mA
Peak Forward Currentb
Power Dissipation
3000
3000
3000
3000
3000
mA
2500
2500
3600
2500
3400
mW
Reverse Voltage
Not designed for reverse bias operation
LED Junction Temperature
Operating Temperature Range
Storage Temperature Range
115
145
115
115
115
°C
°C
°C
–40 to +85
–40 to +100
–40 to +100
–40 to +100
–40 to +85
–40 to +100
–40 to +85
–40 to +100
–40 to +85
–40 to +100
a. Derate linearly as shown in Figure 8, Figure 9, Figure 10, and Figure 11.
b. Duty factor = 10%, frequency = 1kHz.
Broadcom
ARE1-xxx0-DS100
3
ARE1-xxx0-00000 Data Sheet
High Power Infrared Emitting Diodes
Optical and Electrical Characteristics (T = 25°C)
J
Parameters
Min.
Typ.
Max.
Units
Test Condition
IF = 1A
a
V
Forward Voltage, VF
1.4
1.4
2.7
1.4
2.5
1.8
1.8
3.2
1.8
3.0
2.5
2.5
3.6
2.5
3.4
ARE1-8xC0
ARE1-8xD0
ARE1-8x30
ARE1-9xD0
ARE1-9x30
Reverse Voltage, VR
Not designed for reverse bias
b
—
10
—
°C/W
LED junction to solder point
Thermal Resistance, RθJ-S
a. Forward voltage tolerance is ±0.1V.
b. Thermal resistance from the LED junction to the solder point.
Part Numbering System
A
R
E
1
-
x1
x2
x3
0
-
0
0
0
0
0
Code
Description
Option
x1
x2
x3
Peak Wavelength
8
9
850 nm
940 nm
90°
Viewing Angle
9
F
C
D
3
150°
Brightness Option
Single junction normal brightness
Single junction high brightness
Double junction high brightness
Part Number Example
ARE1-89D0-00000
x : 8
—
—
—
Peak wavelength 850nm
Viewing angle typical 90°
1
x : 9
2
x : D
Single junction high brightness
3
Broadcom
ARE1-xxx0-DS100
4
ARE1-xxx0-00000 Data Sheet
High Power Infrared Emitting Diodes
Figure 2: Spectral Power Distribution
Figure 3: Forward Current vs. Forward Voltage
1.0
0.9
1000
900
800
700
600
500
400
300
200
100
0
0.8
ARE1-8xC0
ARE1-8xD0
ARE1-9xD0
ARE1-8x30
ARE1-9x30
850nm
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
940nm
380 440 500 560 620 680 740 800 860 920 980 1,040
WAVELENGTH - nm
0.0
1.0
2.0
3.0
4.0
5.0
FORWARD VOLTAGE - V
Figure 4: Relative Radiant Flux vs. Mono Pulse Current
Figure 5: Relative Light Output vs. Junction Temperature
3.0
140
ARE1-8xD0
ARE1-9xD0
130
120
110
100
90
ARE1-8x30
2.5
ARE1-8xC0
ARE1-8xD0 (TJmax 145°C)
ARE1-9xD0 (TJmax 115°C)
ARE1-8x30
2.0
ARE1-8xC0
ARE1-9x30
80
70
60
50
40
30
20
10
ARE1-9x30
tp = 100μs
1.5
1.0
0.5
0.0
0
0
500
1000
1500
2000
2500
3000
-50
-25
0
25
50
75
100
125
150
175
JUNCTION TEMPERATURE, TJ - °C
MONO PULSE CURRENT -mA
Figure 6: Forward Voltage Shift vs. Junction Temperature
Figure 7: Radiation Pattern
0.50
1.0
0.9
ARE1-9x30
0.40
150°
0.8
ARE1-8x30
0.30
ARE1-9xD0
0.7
0.6
0.5
0.20
ARE1-8xD0
0.10
ARE1-8xC0
0.00
-0.10
-0.20
-0.30
-0.40
0.4
90°
0.3
0.2
0.1
0.0
-50
-25
0
25
50
75
100
125
150
-90
-60
-30
0
30
60
90
JUNCTION TEMPERATURE, TJ - °C
ANGULAR DISPLACEMENT - DEGREE
Broadcom
ARE1-xxx0-DS100
5
ARE1-xxx0-00000 Data Sheet
High Power Infrared Emitting Diodes
Figure 8: Maximum Forward Current vs. Ambient
Temperature for ARE1-8xC0 and ARE1-9xD0
Figure 9: Maximum Forward Current vs. Ambient
Temperature for ARE1-8xD0
1200
1000
800
1200
1000
800
RșJ-A = 25°C/W
600
400
200
0
RșJ-A = 35°C/W
RșJ-A = 45°C/W
600
400
200
0
RșJ-A = 25°C/W
RșJ-A = 35°C/W
RșJ-A = 45°C/W
0
20
40
60
80
100
0
20
40
60
80
100
120
AMBIENT TEMPERATURE, TA - °C
AMBIENT TEMPERATURE, TA - °C
Figure 10: Maximum Forward Current vs. Ambient
Temperature for ARE1-8x30
Figure 11: Maximum Forward Current vs. Ambient
Temperature for ARE1-9x30
1200
1000
800
1200
1000
800
RșJ-A = 20°C/W
RșJ-A = 20°C/W
RșJ-A = 25°C/W
RșJ-A = 30°C/W
600
400
200
0
600
400
200
0
RșJ-A = 25°C/W
RșJ-A = 30°C/W
0
20
40
60
80
100
0
20
40
60
80
100
AMBIENT TEMPERATURE, TA - °C
AMBIENT TEMPERATURE, TA - °C
Figure 12: Maximum Forward Current vs. Solder Point
Temperature
Figure 13: Recommended Soldering Land Pattern
1.0
1200
1000
0.5
Others
800
ARE1-8x30
ARE1-8xD0
600
400
200
0
0
20
40
60
80
100
120
SOLDER POINT TEMPERATURE, TS - °C
NOTE: All dimensions are in millimeters (mm).
Broadcom
ARE1-xxx0-DS100
6
ARE1-xxx0-00000 Data Sheet
High Power Infrared Emitting Diodes
Figure 14: Carrier Tape Dimensions
NOTE: All dimensions in millimeters (mm).
Figure 15: Reel Dimensions
14.4 Typ.
PRODUCT LABEL
Ø13.0 Typ.
USER FEED DIRECTION
NOTE: All dimensions are in millimeters (mm).
Broadcom
ARE1-xxx0-DS100
7
ARE1-xxx0-00000 Data Sheet
High Power Infrared Emitting Diodes
Precautionary Notes
cleaning, rub the surface gently without putting too
much pressure on the silicone. Ultrasonic cleaning is
not recommended.
Reflow Soldering
Do not perform reflow soldering more than twice.
Observe necessary precautions of handling
moisture-sensitive devices as stated in Handling of
Moisture-Sensitive Devices.
Handling of Moisture-Sensitive Devices
Do not apply any pressure or force on the LED during
reflow and after reflow when the LED is still hot.
This product has a Moisture Sensitive Level 3 rating per
JEDEC J-STD-020. Refer to Broadcom Application Note
AN5305, Handling of Moisture Sensitive Surface Mount
Devices, for additional details and a review of proper
handling procedures.
Figure 16: Recommended Lead-Free Reflow Soldering Profile
10 to 30 SEC.
Before use:
255 – 260°C
3°C/SEC. MAX.
An unopened moisture barrier bag (MBB) can be stored
at <40°C/90% RH for 12 months. If the actual shelf life
has exceeded 12 months and the humidity indicator
card (HIC) indicates that baking is not required, it is
safe to reflow the LEDs per the original MSL rating.
217°C
200°C
6°C/SEC. MAX.
150°C
3°C/SEC. MAX.
Do not open the MBB prior to assembly (for example,
for IQC). If unavoidable, MBB must be properly
resealed with fresh desiccant and HIC. The exposed
duration must be taken in as floor life.
60 – 120 SEC.
100 SEC. MAX.
TIME
Control after opening the MBB:
Handling Precautions
Read the HIC immediately upon opening of MBB.
Keep the LEDs at <30°/60% RH at all times, and
complete all high temperature-related processes,
including soldering, curing, or rework within 168 hours.
The encapsulation material of the LED is made of silicone
for better product reliability. Compared to epoxy
encapsulant, which is hard and brittle, silicone is softer and
flexible. Observe special handling precautions during
assembly of silicone encapsulated LED products. Failure to
comply might lead to damage and premature failure of the
Control for unfinished reel:
Store unused LEDs in a sealed MBB with desiccant or a
desiccator at <5% RH.
®
LED. Refer to Broadcom Application Note AN5288,
Silicone Encapsulation for LED: Advantages and Handling
Control of assembled boards:
Precautions, for additional information.
If the PCB soldered with the LEDs is to be subjected to other
high-temperature processes, store the PCB in a sealed
MBB with desiccant or desiccator at <5% RH to ensure that
all LEDs have not exceeded their floor life of 168 hours.
Do not poke sharp objects into the silicone encapsulant.
Sharp objects, such as tweezers or syringes, might
apply excessive force or even pierce through the
silicone and induce failures to the LED die or wire bond.
Do not touch the silicone encapsulant. Uncontrolled
force acting on the silicone encapsulant might result in
excessive stress on the wire bond. Hold the LED only
by the body.
Baking is required if the following conditions exist:
The HIC indicator indicates a change in color for 10%
and 5%, as stated on the HIC.
The LEDs are exposed to conditions of >30°C/60% RH
at any time.
Do not stack assembled PCBs together. Use an
appropriate rack to hold the PCBs.
The LED's floor life exceeded 168 hours.
The surface of silicone material attracts dust and dirt
easier than epoxy due to its surface tackiness. To
remove foreign particles on the surface of silicone, use
a cotton bud with isopropyl alcohol (IPA). During
The recommended baking condition is: 60°C ± 5ºC for
20 hours. Baking can only be done once.
Broadcom
ARE1-xxx0-DS100
8
ARE1-xxx0-00000 Data Sheet
High Power Infrared Emitting Diodes
Storage:
where:
T = ambient temperature (°C)
A
If the LEDs are exposed in an ambient environment for too
long, the plating might be oxidized, thus affecting its
solderability performance. As such, keep unused LEDs in a
sealed MBB with desiccant or in a desiccator at <5% RH.
R
= thermal resistance from LED junction to ambient
θJ-A
(°C/W)
I = forward current (A)
F
V
= maximum forward voltage (V)
Fmax
Application Precautions
The complication of using this formula lies in T and R
.
θJ-A
A
The drive current of the LED must not exceed the
maximum allowable limit across temperature as stated
in the data sheet. Constant current driving is
Actual T is sometimes subjective and hard to determine.
A
R
varies from system to system depending on design
θJ-A
and is usually not known.
recommended to ensure consistent performance.
The circuit design must cater to the whole range of
Another way of calculating T is by using the solder point
temperature, TS as follows:
J
forward voltage (V ) of the LEDs to ensure the intended
F
drive current can always be achieved.
The LED exhibits slightly different characteristics at
different drive currents, which may result in a larger
variation of performance (meaning: intensity,
wavelength, and forward voltage). Set the application
current as close as possible to the test current to
minimize these variations.
T = T + R
× I ×V
θJ-S F Fmax
J
S
where:
T = LED solder point temperature as shown in
S
Figure 17 (°C)
R
= thermal resistance from junction to solder point
θJ-S
Do not use the LED in the vicinity of material with sulfur
content or in environments of high gaseous sulfur
compounds and corrosive elements. Examples of
material that might contain sulfur are rubber gaskets,
room-temperature vulcanizing (RTV) silicone rubber,
rubber gloves, and so on. Prolonged exposure to such
environments may affect the optical characteristics and
product life.
(°C/W)
I = forward current (A)
F
V
= maximum forward voltage (V)
Fmax
Figure 17: Solder Point Temperature on PCB
Avoid a rapid change in ambient temperature,
especially in high-humidity environments, because it
causes condensation on the LED.
If the LED is intended to be used in harsh or outdoor
environment, protect the LED against damages caused
by rain water, water, dust, oil, corrosive gases, external
mechanical stresses, and so on.
Thermal Management
T can be easily measured by mounting a thermocouple on
S
the soldering joint as shown in Figure 17, while R
is
θJ-S
The optical, electrical, and reliability characteristics of the
LED are affected by temperature. Keep the junction
provided in the data sheet. Verify the T of the LED in the
S
final product to ensure that the LEDs are operating within all
maximum ratings stated in the data sheet.
temperature (T ) of the LED below the allowable limit at all
J
times. T can be calculated as follows:
J
T = T + R
× I × V
F Fmax
Eye Safety Precautions
J
A
θJ-A
LEDs may pose optical hazards when in operation. Do not
look directly at operating LEDs because it might be harmful
to the eyes. For safety reasons, use appropriate shielding or
personal protective equipment.
Broadcom
ARE1-xxx0-DS100
9
Disclaimer
Broadcom's products and software are not specifically designed, manufactured, or authorized for sale as parts, components,
or assemblies for the planning, construction, maintenance, or direct operation of a nuclear facility or for use in medical
devices or applications. The customer is solely responsible, and waives all rights to make claims against Broadcom or its
suppliers, for all loss, damage, expense, or liability in connection with such use.
Broadcom, the pulse logo, Connecting everything, Avago Technologies, Avago, and the A logo are among the trademarks
of Broadcom and/or its affiliates in the United States, certain other countries, and/or the EU.
Copyright © 2018 Broadcom. All Rights Reserved.
The term “Broadcom” refers to Broadcom Inc. and/or its subsidiaries. For more information, please visit www.broadcom.com.
Broadcom reserves the right to make changes without further notice to any products or data herein to improve reliability,
function, or design. Information furnished by Broadcom is believed to be accurate and reliable. However, Broadcom does
not assume any liability arising out of the application or use of this information, nor the application or use of any product or
circuit described herein, neither does it convey any license under its patent rights nor the rights of others.
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