BUL791-S [BOURNS]

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型号：	BUL791-S
厂家：	BOURNS ELECTRONIC SOLUTIONS
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BUL791

NPN SILICON POWER TRANSISTOR

●

Designed Specifically for High Frequency

Electronic Ballasts up to 125 W

TO-220 PACKAGE

(TOP VIEW)

●

6 to 22 at V = 1 V, I = 2 A

FE CE C

Low Power Losses (On-state and Switching)

Key Parameters Characterised at High

Temperature

●

Tight and Reproducible Parametric

Distributions

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C ambient temperature (unless otherwise noted )

RATING

SYMBOL

VALUE

UNIT

Collector-emitter voltage (V_BE= 0)

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

Emitter-base voltage

V_CES

V_CBO

V_CEO

V_EBO

I_C

700

400

Continuous collector current

Peak collector current (see Note 1)

Peak collector current (see Note 2)

Continuous base current

I_CM

I_B

2.5

Peak base current (see Note 2)

I_BM

3.5

Continuous device dissipation at (or below) 25°C case temperature

Operating junction temperature range

P_tot

T_j

°C

-65 to +150

Storage temperature range

T_stg

NOTES: 1. This value applies for t_p= 10 ms, duty cycle ≤ 2%.

2. This value applies for t_p= 300 µs, duty cycle ≤ 2%.

JULY 1991 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BUL791

NPN SILICON POWER TRANSISTOR

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-emitter

sustaining voltage

Collector-emitter

cut-off current

Emitter cut-off

current

V_CEO(sus)

I_CES

I_C= 100 mA

L = 25 mH

(see Note 3)

T_C= 90°C

400

V_CE= 700 V

_BE= 0

µA

V_BE= 0

200

I_EBO

V_EB

9 V

I_C= 0

Base-emitter

I_B= 400 mA

I_C

2 A

(see Notes 4 and 5)

T_C= 90°C

0.94

0.86

0.25

0.3

V_BE(sat)

V_CE(sat)

saturation voltage

Collector-emitter

saturation voltage

(see Notes 4 and 5)

T_C= 90°C

0.4

V_CE

1 V

5 V

I_C= 10 mA

16.5

Forward current

transfer ratio

h_FE

I_C

2 A

8 A

6.5

Collector-base forward

bias diode voltage

V_FCB

I_CB= 60 mA

850

NOTES: 3. Inductive loop switching measurement.

4. These parameters must be measured using pulse techniques, t_p= 300 µs, duty cycle ≤ 2%.

5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located

within 3.2 mm from the device body.

thermal characteristics

PARAMETER

Junction to free air thermal resistance

Junction to case thermal resistance

MIN

TYP

MAX

UNIT

R_θJA

R_θJC

62.5

1.66

°C/W

inductive-load switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

TYP

MAX

UNIT

t_sv

t_fi

Storage time

2.2

µs

I_C= 2 A

I_B(on)= 400 mA

I_B(off)= 800 mA

_CC= 40 V

Current fall time

Cross over time

Storage time

180

300

L = 1 mH

V_CLAMP= 300 V

t_xo

t_sv

t_fi

210

I_C= 2 A

I_B(on)= 400 mA

I_B(off)= 250 mA

V_CC= 40 V

Current fall time

L = 1 mH

V_CLAMP= 300 V

120

230

resistive-load switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

t_sv

t_fi

Storage time

I_C= 2 A

_B(on)= 400 mA

2.2

µs

Current fall time

V_CC= 300 V

I_B(off)= 400 mA

160

250

JULY 1991 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BUL791

NPN SILICON POWER TRANSISTOR

TYPICAL CHARACTERISTICS

FORWARD CURRENT TRANSFER RATIO

COLLECTOR-EMITTER SATURATION VOLTAGE

COLLECTOR CURRENT

L791CHF

L791CVB

T_C= 25°C

I_B= I_C/ 5

T_C= 25°C

T_C= 90°C

1·0

0·1

V_CE= 1 V

_CE= 5 V

1·0

0·01

0·1

1·0

10 20

0·1

1·0

I_C- Collector Current - A

Figure 1.

Figure 2.

INDUCTIVE SWITCHING TIMES

COLLECTOR CURRENT

CASE TEMPERATURE

L791CI1

L791CI3

1·0

I_B(on)= 400 mA, V_CC

= 40 V, L = 1 mH

t_sv

t_xo

t_fi

I_B(on)= I_C/ 5

I_B(off)= 800 mA, V_CLAMP= 300 V, I_C= 2 A

I_B(off)= I_C/ 2.5

V_CC

= 40 V

_CLAMP= 300 V

= 1 mH

T_C

1·0

0·1

= 25°C

0·1

t_sv

t_fi

0·01

0·1

1·0

100

I_C- Collector Current - A

T_C- Case Temperature - °C

Figure 3.

Figure 4.

JULY 1991 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BUL791

NPN SILICON POWER TRANSISTOR

TYPICAL CHARACTERISTICS

INDUCTIVE SWITCHING TIMES

COLLECTOR CURRENT

CASE TEMPERATURE

L791CI2

L791CI4

1·0

0·1

1·0

0·1

I_B(on)= 400 mA, V_CC

= 40 V, L = 1 mH

t_sv

t_fi

I_B(on)= I_C/ 5

I_B(off)= I_C/ 8

V_CC= 40 V

I_B(off)= 250 mA, V_CLAMP= 300 V, I_C= 2 A

_CLAMP= 300 V

= 1 mH

T_C

= 25°C

t_sv

t_fi

0·1

1·0

100

I_C- Collector Current - A

T_C- Case Temperature - °C

Figure 5.

Figure 6.

RESISTIVE SWITCHING TIMES

COLLECTOR CURRENT

CASE TEMPERATURE

L791CR1

L791CR2

1·0

0·1

1·0

0·1

I_B(on)= 400 mA, V_CC= 300 V

I_B(off)= 400 mA, I_C= 2 A

I_B(on)= I_C/ 5, V_CC= 300 V

I_B(off)= I_C/ 5, T_C= 25°C

t_sv

t_fi

t_sv

t_fi

0·1

1·0

100

I_C- Collector Current - A

T_C- Case Temperature - °C

Figure 7.

Figure 8.

JULY 1991 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BUL791

NPN SILICON POWER TRANSISTOR

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

MAXIMUM REVERSE-BIAS

SAFE OPERATING AREA

L791CFB

L791CRB

1·0

I_B(on)= I_C/ 5

_BE(off)= -5 V

T_C= 25°C

t_p10 µs

t_p= 100 µs

0·1

t_p

1 ms

10 ms

DC Operation

0·01

1·0

100

1000

100 200 300 400 500 600 700 800

V_CE- Collector-Emitter Voltage - V

Figure 9.

Figure 10.

JULY 1991 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BUL791

NPN SILICON POWER TRANSISTOR

MECHANICAL DATA

TO-220

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

TO220

4,70

4,20

10,4

10,0

1,32

1,23

3,96

3,71

2,95

2,54

see Note B

6,6

6,0

15,90

14,55

see Note C

6,1

3,5

14,1

12,7

1,70

1,07

0,97

0,61

2,74

2,34

0,64

0,41

2,90

2,40

5,28

4,88

VERSION 1

VERSION 2

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTES: A. The centre pin is in electrical contact with the mounting tab.

B. Mounting tab corner profile according to package version.

C. Typical fixing hole centre stand off height according to package version.

Version 1, 18.0 mm. Version 2, 17.6 mm.

MDXXBE

JULY 1991 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

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