PTVS15-076C-SH [BOURNS]

Trans Voltage Suppressor Diode,;
PTVS15-076C-SH
型号: PTVS15-076C-SH
厂家: BOURNS ELECTRONIC SOLUTIONS    BOURNS ELECTRONIC SOLUTIONS
描述:

Trans Voltage Suppressor Diode,

二极管
文件: 总3页 (文件大小:394K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Features  
Applications  
High power DC bus protection  
15 kA, 8/20 µs surge capability  
Low clamping voltage under surge  
Bidirectional TVS  
Surface mount package  
Excellent performance over temperature  
UL Recognized  
PTVS15-xxxC-SH Series High Current TVS Diodes  
General Information  
Agency Approval  
The PTVS15-xxxC-SH range of high current bidirectional TVS diodes  
is designed for use in high power DC bus clamping applications. These  
devices offer bidirectional port protection and are available with standoff  
voltage ratings of 58 V and 76 V.  
Description  
UL  
File Number: E313168  
The devices are RoHS* compliant and UL Recognized. They also meet  
IEC 61000-4-5 8/20 ꢀs current surge requirements.  
Absolute Maximum Ratings (@ T = 25 °C Unless Otherwise Noted)  
A
Rating  
Symbol  
Value  
Unit  
PTVS15-058C-SH  
PTVS15-076C-SH  
58  
Repetitive Standoff Voltage  
V
V
WM  
76  
Peak Current Rating per 8/20 μs IEC 61000-4-5  
Operating Junction Temperature Range  
Storage Temperature Range  
I
15  
kA  
°C  
°C  
PPM  
T
-55 to +125  
-55 to +150  
J
T
S
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
Standby Current  
V
= V  
WM  
10  
μA  
D
D
PTVS15-058C-SH  
64  
85  
66  
92  
70  
V
Breakdown Voltage  
I
= 10 mA  
= 15 kA  
V
(BR)  
BR  
PTVS15-076C-SH  
95  
PTVS15-058C-SH  
110  
150  
(1)  
V
V
Clamping Voltage  
Temperature Coefficient  
Capacitance  
I
V
C
PP  
PTVS15-076C-SH  
0.1  
%/°C  
nF  
(BR)  
F = 10 kHz,  
V = 1 Vrms  
PTVS15-058C-SH  
PTVS15-076C-SH  
12  
C
9
d
(1) V measured at the time which is coincident with the peak surge current.  
C
Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116  
EMEA: Tel: +36 88 520 390 • Fax: +36 88 520 211  
The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700  
www.bourns.com  
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.  
Specifications are subject to change without notice.  
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.  
Users should verify actual device performance in their specific applications.  
PTVS15-xxxC-SH Series High Current TVS Diodes  
Recommended Printed Wiring  
Land Pattern Dimensions  
Product Dimensions  
This is a Pb free product, with epoxy encapsulations meeting UL Class 94V-0. Ag plated  
leads meet solderability requirements of JESD22-B102. Package dimensions are shown  
below.  
3.ꢀ  
(.138)  
21.00 0.ꢀ0  
(.827 .020)  
16.00  
MAX.  
(.630)  
11.00  
(.433)  
16.00  
(.630)  
MAX.  
1ꢀ.00  
(.ꢀ91)  
10.00 0.20  
(.394 .008)  
Typical Part Marking  
PTVS15-058C-SH............................15058  
PTVS15-076C-SH............................15076  
D
How to Order  
PTVS 15 - xxx C - S H  
MIN.  
Series  
2.00  
(.079)  
MIN.  
2.00  
0.ꢀ0 0.0ꢀ  
(.020 .002)  
2.80 0.20  
(.110 .008)  
PTVS = Power TVS High  
Current Diode  
(.079)  
Peak Current Rating  
15 = 15 kA  
Device  
Dimension D  
MM  
(INCHES)  
Repetitive Standoff Voltage  
058 = 58 V  
DIMENSIONS:  
11.00  
(0.433)  
12.00  
Max.  
Max.  
PTVS15-058C-SH  
076 = 76 V  
PTVS15-076C-SH  
Suffix  
(0.472)  
C = Bidirectional Device  
Package  
S = Surface Mount  
Application  
Temperature  
H = High Temperature Series  
A typical application for Power TVS products includes DC power line protection.  
+
Exposed  
DC  
Power  
Interface  
-
Specifications are subject to change without notice.  
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.  
Users should verify actual device performance in their specific applications.  
PTVS15-xxxC-SH Series High Current TVS Diodes  
Performance Graphs  
V-I Characteristic  
Typical V vs. Junction Temperature  
BR  
16  
14  
12  
10  
8
6
25 °C  
4
2
0
-4  
-6  
-8  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (T ) - °C  
J
Typical Surge Current Derating  
Current 8/20 µs Waveform per IEC 61000-4-5  
120  
120  
110  
100  
90  
Test Waveform Parameters  
tt = 8 µs  
td = 20 µs  
tt  
100  
80  
60  
40  
20  
0
et  
80  
70  
60  
50  
40  
td = t IPP/2  
|
30  
20  
10  
0
5
10  
15  
20  
25  
30  
0
t – Time (µs)  
0
25  
50  
75  
100  
125  
150  
175  
Ambient Temperature (°C)  
This graph shows the typical device surge current derating  
versus ambient temperature when subjected to the 8/20 µs  
current waveform per the IEC 61000-4-5 specification.  
This device is not intended for continuous operation at  
temperatures above 125 °C.  
REV. 02/14  
Specifications are subject to change without notice.  
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.  
Users should verify actual device performance in their specific applications.  

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