BA-3H12UW [BRTLED]
bright red chips, which are made from GaP on GaP substrate; 鲜红的芯片，这是对的GaP衬底制成来自Gap
| 型号： | BA-3H12UW |
| 厂家： | 
BRTLED |
| 描述： | bright red chips, which are made from GaP on GaP substrate |
| 文件： | 总3页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BA-3H12UW
●
Package Dimensions :
●
Features :
1. Emitting area : 18.78×5.85（mm）
2. Low power requirement.
3. Excellent characters appearance.
4. Solid state reliability.
5. Categorized for luminous intensity.
●
Description :
1. The BA-3H12UW have uniform emitting
light.
2. This product use bright red chips, which
are made from GaP on GaP substrate.
3. This product have a white face and
white segments.
Notes:
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(.01")unless otherwise
specified.
3. Specifications are subject to change without
notice.
4.
This product doesn't contain restriction
substance, comply ROHS standard.
● Internal Circuit Diagram :
佰鴻工業股份有限公司
http://www.brtled.com
Ver.2.0 Page 1 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BA-3H12UW
● Absolute Maximum Ratings(Ta=25℃)
Parameter
Symbol
Rating
Unit
mW
mA
mA
V
Power Dissipation Per Segment
Forward Current Per Segment
Peak Forward Current Per Segment
Pd
40
IF
15
IFP
50
5
(Duty 1/10, 1KHZ)
Reverse Voltage Per Segment
Operating Temperature
Storage Temperature
VR
-40℃~80℃
-40℃~85℃
260℃ For 5 Seconds
Topr
Tstg
Tsol
-
-
Soldering Temperature
(1/16" From Body)
-
● Electrical And Optical Characteristics(Ta=25℃)
Parameter
Symbol Condition Min.
Typ.
2.2
5.0
-
Max.
2.5
-
Unit
V
Forward Voltage Per Segment
Vf
Iv
IR
IF=10mA
IF=10mA
VR=5V
-
-
-
Luminous Intensity Per Segment
mcd
µA
Reverse Cu佰rrent Pe鴻r Segm工ent 業股份有限公司
100
λp
λd
Peak Wave Length
IF=10mA
-
700
-
-
nm
nm
nm
Dominant Wave Length
IF=10mA
650
http://www.brtled.com
∆λ
Spectral Line Half-width
IF=10mA
-
90
Ver.2.0 Page 2 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BA-3H12UW
● Typical Electro-Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
Fig.1 Relative Radiant Intensity VS. Wavelength
1.0
0.5
0
550
600
650
700
750
800
850
Wavelength(nm)
Fig.3 Relative Luminous
Intensity VS.
Fig.2 Forward Current VS.
Forward Voltage
Ambient Temperature
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
-40 -20
0
20
40
60
Ambient Temperature Ta( C)
Forward Voltage (V)
Fig.4 Relative Luminous
Intensity VS.
Fig.5 Forward Current
Derating Curve VS.
Ambient Temperature
Forward Current
25
20
3.0
佰鴻工業股份有限公司
2.0
15
10
http://www.brtled.com
1.0
5
0
0.0
0
20 40 60 80 100 120
0
10
20
30
40
50
Ambient Temperature Ta( C)
Forward Current(mA)
Ver.2.0 Page 3 of 3
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