BD-E326RD [BRTLED]
super red chips, which are made from AlGaAs on GaAs substrate; 超级红筹股，这是在GaAs衬底制成的铝镓砷
| 型号： | BD-E326RD |
| 厂家： | 
BRTLED |
| 描述： | super red chips, which are made from AlGaAs on GaAs substrate |
| 文件： | 总4页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BD-E326RD
For : 高詰
●
Package Dimensions :
●
Features :
15.0(.591)
1. 0.36 inch (9.20mm) Digit Height.
2. Continuous uniform segments.
3. Low power requirement.
4.8(.189)
9.2(.362)
14.0(.551)
10.16(.400)
4. Excellent characters appearance.
5. Solid state reliability.
1.0(.039)
7.5(.295)
6. Categorized for luminous intensity.
7. Duplex drive common anode.
7.2(.283)
3.0(.118) MIN.
●
Description :
2.54x4=10.16(.400)
1. The BD-E326RD is a 9.2mm (0.36")
high dual digit seven segments display.
2. This product use super red chips,
which are made from AlGaAs on
GaAs substrate.
Notes:
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(.01")unless otherwise
specified.
3. Specifications are subject to change without
notice.
3. This product have a black face and
white segments.
● Internal Circuit Diagram :
10
5
D.1
D.2
D1
D2
A
佰鴻工業股份有限公司
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E
C
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PIN 1.
Ver.1.0 Page 1 of 4
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BD-E326RD
For : 高詰
● Absolute Maximum Ratings(Ta=25℃)
Parameter
Symbol
Rating
Unit
mW
mA
mA
V
Power Dissipation Per Segment
Forward Current Per Segment
Peak Forward Current Per Segment
Pd
80
IF
30
150
IFP
(Duty 1/10, 1KHZ)
VR
Reverse Voltage Per Segment
Operating Temperature
Storage Temperature
5
-40℃~80℃
-40℃~85℃
260℃ For 5 Seconds
Topr
Tstg
Tsol
-
-
Soldering Temperature
(1/16" From Body)
-
● Electrical And Optical Characteristics(Ta=25℃)
Parameter
Symbol Condition Min.
Typ.
1.7
6.0
-
Max.
Unit
V
Forward Voltage Per Segment
Luminous Intensity Per Segment
Reverse Current Per Segment
Peak Wave Length
Vf
Iv
IF=10mA
IF=10mA
VR=5V
-
-
-
-
-
2.5
-
mcd
µA
IR
100
λp
λd
IF=10mA
IF=10mA
660
643
-
-
nm
nm
nm
Dominant Wave Length
佰鴻工業股份有限公司
∆λ
Spectral Line Half-width
IF=10mA
-
20
-
http://www.brtled.com
Ver.1.0 Page 2 of 4
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BD-E326RD
For : 高詰
● Typical Electro-Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
Fig.1 Relative Radiant Intensity VS. Wavelength
1.0
0.5
0
570
600
630
660
690
720
750
Wavelength(nm)
Fig.3 Relative Luminous
Intensity VS.
Fig.2 Forward Current VS.
Forward Voltage
Ambient Temperature
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0
1
2
3
4
5
-40 -20
0
20
40
60
Ambient Temperature Ta( C)
Forward Voltage (V)
Fig.4 Relative Luminous
Intensity VS.
Fig.5 Forward Current
Derating Curve VS.
Ambient Temperature
Forward Current
50
3.0
佰鴻工業股份有限公司
40
2.0
30
20
http://www.brtled.com
1.0
10
0
0.0
20 40 60 80 100 120
10
20
30
40
50
Forward Current(mA)
Ambient Temperature Ta( C)
Ver.1.0 Page 3 of 4
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BD-E326RD
For : 高詰
● Bin Limits
1. Intensity Bin Limits (At IF= 10mA)
Bin Code
Min. (mcd)
4.500
Max. (mcd)
6.070
N
P
Q
5.840
7.890
7.600
10.260
●
Bin： x
Intensity bin code
佰鴻工業股份有限公司
http://www.brtled.com
Ver.1.0 Page 4 of 4
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