BL-PDA-TJS-C10 [BRTLED]

High brightness surface mount LED.; 高亮度表面贴装LED 。
BL-PDA-TJS-C10
型号: BL-PDA-TJS-C10
厂家: BRTLED    BRTLED
描述:

High brightness surface mount LED.
高亮度表面贴装LED 。

光电
文件: 总8页 (文件大小:272K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
AMERICAN BRIGHT OPTOELECTRONICS CORP.  
AlInGaP DOMILED BL-PDx-xJS Series  
Feature:  
1. High brightness surface mount LED.  
2. 120° viewing angle.  
3. Small package outline (LxWxH) of 2.8 x 3.2 x 1.8 mm.  
4. Qualified according to JEDEC moisture sensitivity Level 2.  
5. Compatible to both IR reflow soldering and TTW soldering.  
6. Pb Free/ RoHS Compliance  
Package Dimension:  
Recommended Solder Pad  
V.4 Page: 1 of 8  
AMERICAN BRIGHT OPTOELECTRONICS CORP.  
AlInGaP DOMILED BL-PDx-xJS Series  
Optical Characteristics:  
Luminous Intensity @  
IF=20mA  
Chip Technology /  
Color  
Viewing  
Angle °  
Part Number  
Iv (mcd)  
BL-PDH-CJS-C10  
AlInGaP  
Hyper-red, 640nm  
120  
45.0 – 112.5  
45.0 – 56.0  
56.0 – 71.5  
71.5 – 90.0  
90.0 – 112.5  
BIN P1  
BIN P2  
BIN Q1  
BIN Q2  
BL-PDS-CJS-C10  
AlInGaP  
Super-red, 632nm  
120  
71.5 – 180.0  
71.5 – 90.0  
90.0 – 112.5  
112.5 – 140.0  
140.0 – 180.0  
BIN Q1  
BIN Q2  
BIN R1  
BIN R2  
BL-PDS-SJS-C10  
71.5 – 180.0  
71.5 – 90.0  
90.0 – 112.5  
112.5 – 140.0  
140.0 – 180.0  
BIN Q1  
BIN Q2  
BIN R1  
BIN R2  
BL-PDR-CJS-C10  
AlInGaP  
Red, 625nm  
120  
112.5 – 285.0  
112.5 – 140.0  
140.0 – 180.0  
180.0 – 224.0  
224.0 – 285.0  
BIN R1  
BIN R2  
BIN S1  
BIN S2  
BL-PDR-SJS-C10  
112.5 – 285.0  
112.5 – 140.0  
140.0 – 180.0  
180.0 – 224.0  
224.0 – 285.0  
BIN R1  
BIN R2  
BIN S1  
BIN S2  
BL-PDR-TJS-C10  
TS AlInGaP  
Red, 625nm  
120  
120  
285.0 – 715.0  
285.0 – 355.0  
355.0 – 450.0  
450.0 – 560.0  
560.0 – 715.0  
BIN T1  
BIN T2  
BIN U1  
BIN U2  
BL-PDA-CJS-C10  
AlInGaP  
Amber, 615nm  
112.5 – 285.0  
112.5 – 140.0  
140.0 – 180.0  
180.0 – 224.0  
224.0 – 285.0  
BIN R1  
BIN R2  
BIN S1  
BIN S2  
BL-PDA-SJS-C10  
180.0 – 450.0  
180.0 – 224.0  
224.0 – 285.0  
285.0 – 355.0  
355.0 – 450.0  
285.0 – 715.0  
285.0 – 355.0  
355.0 – 450.0  
450.0 – 560.0  
560.0 – 715.0  
BIN S1  
BIN S2  
BIN T1  
BIN T2  
BL-PDA-TJS-C10  
TS AlInGaP  
Amber, 615nm  
120  
BIN T1  
BIN T2  
BIN U1  
BIN U2  
V.4 Page: 2 of 8  
AMERICAN BRIGHT OPTOELECTRONICS CORP.  
AlInGaP DOMILED BL-PDx-xJS Series  
Luminous Intensity @  
Chip Technology /  
Color  
Viewing  
Angle  
Part Number  
IF=20mA  
Iv (mcd)  
BL-PDO-CJS-C10  
AlInGaP  
Orange, 605nm  
120  
112.5 – 285.0  
112.5 – 140.0  
140.0 – 180.0  
180.0 – 224.0  
224.0 – 285.0  
BIN R1  
BIN R2  
BIN S1  
BIN S2  
BL-PDO-SJS-C10  
180.0 – 450.0  
180.0 – 224.0  
224.0 – 285.0  
285.0 – 355.0  
355.0 – 450.0  
BIN S1  
BIN S2  
BIN T1  
BIN T2  
BL-PDY-CJS-C10  
AlInGaP  
Yellow, 587nm  
120  
112.5 – 285.0  
112.5 – 140.0  
140.0 – 180.0  
180.0 – 224.0  
224.0 – 285.0  
BIN R1  
BIN R2  
BIN S1  
BIN S2  
BL-PDY-SJS-C10  
180.0 – 450.0  
180.0 – 224.0  
224.0 – 285.0  
285.0 – 355.0  
355.0 – 450.0  
BIN S1  
BIN S2  
BIN T1  
BIN T2  
BL-PDY-TJS-C10  
TS AlInGaP  
Yellow, 590nm  
120  
120  
285.0 – 715.0  
285.0 – 355.0  
355.0 – 450.0  
450.0 – 560.0  
560.0 – 715.0  
BIN T1  
BIN T2  
BIN U1  
BIN U2  
BL-PDG-CJS-C10  
AlInGaP  
Green, 572nm  
45.0 – 112.5  
45.0 – 56.0  
56.0 – 71.5  
71.5 – 90.0  
90.0 – 112.5  
BIN P1  
BIN P2  
BIN Q1  
BIN Q2  
BL-PDG-SJS-C10  
71.5 – 180.0  
71.5 – 90.0  
90.0 – 112.5  
112.5 – 140.0  
140.0 – 180.0  
BIN Q1  
BIN Q2  
BIN R1  
BIN R2  
Note:  
1. Other luminous intensity groups are also available upon request.  
2. Luminous intensity is measured with an accuracy of ±11%.  
3. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength  
group is allowed for each reel.  
4. An optional Vf binning is also available upon request. Binning scheme is as per following table.  
V.4 Page: 3 of 8  
AMERICAN BRIGHT OPTOELECTRONICS CORP.  
AlInGaP DOMILED BL-PDx-xJS Series  
Absolute Maximum Ratings:  
Parameter  
Maximum Value  
Unit  
mA  
DC forward current.  
30  
1000  
mA  
V
Peak pulse current; (tp 10 µs, Duty cycle = 0.005)  
Reverse voltage.  
5
LED junction temperature.  
Operating temperature.  
125  
°C  
°C  
°C  
mW  
-40 … +100  
-40 … +100  
75  
Storage temperature.  
Power dissipation ( at room temperature )  
Vf Binning:  
Vf Bin @ 20mA  
Forward Voltage (V)  
1.55 … 2.45 (max)  
1.55 … 1.85  
Standard  
01  
02  
03  
04  
1.85 … 2.15  
2.15 … 2.45  
2.45 … 2.75  
Forward voltage, Vf is measured with an accuracy of ±0.1 V.  
V.4 Page: 4 of 8  
AMERICAN BRIGHT OPTOELECTRONICS CORP.  
AlInGaP DOMILED BL-PDx-xJS Series  
Wavelength Grouping:  
Color  
Group  
Full  
Full  
Full  
Full  
Full  
W
Wavelength distribution (nm)  
636 - 646  
BL-PDH; Hyper-red  
BL-PDS; Super-red  
BL-PDR-CJ, -SJ; Red (AS)  
BL-PDR-TJ; Red (TS)  
BL-PDA; Amber  
625 – 640  
620 – 630  
620 - 635  
610 – 621  
610 – 615  
X
615 – 621  
BL-PDO; Orange  
BL-PDY; Yellow  
BL-PDG; Green  
Full  
W
600 – 612  
600 – 603  
X
603 – 606  
Y
606 - 609  
Z
609 - 612  
Full  
W
582 – 594  
582 – 585  
X
585 – 588  
Y
588 - 591  
Z
591 - 594  
Full  
W
564.5 – 576.5  
564.5 – 567.5  
567.5 – 570.5  
570.5 – 573.5  
573.5 – 576.5  
X
Y
Z
Wavelength is measured with an accuracy of ±1 nm.  
V.4 Page: 5 of 8  
AMERICAN BRIGHT OPTOELECTRONICS CORP.  
AlInGaP DOMILED BL-PDx-xJS Series  
Typical electro-optical characteristics curves:  
Fig.1 Relative luminous intensity vs. forward current.  
Fig.2 Forward current vs. forward voltage.  
Intensity vs. DC Forward Current  
Forward Current (mA) vs. Forward Voltage  
35  
30  
25  
20  
15  
10  
5
2.2  
2
1.8  
1.6  
1.4  
1.2  
1
AS AlInGaP  
TS AlInGaP  
0.8  
0.6  
0.4  
0.2  
0
0
0
10  
20  
30  
40  
50  
60  
1.2  
1.4  
1.6  
1.8  
2
2.2  
2.4  
2.6  
FORWARD CURRENT (mA)  
Forward Voltage (V)  
Fig.3 Radiation pattern.  
30° 20° 10°  
Fig.4 Maximum forward current vs. temperature.  
0°  
1.0  
35  
30  
25  
20  
15  
10  
5
40°  
50°  
0.8  
0.6  
0.4  
0.2  
60°  
70°  
80°  
90°  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
Ambient Temperature  
Fig.5 Relative Intensity vs. Wavelength  
Relative Spectra Emission  
1.0  
0.9  
Or ange  
0.8  
0.7  
Amber  
Red  
0.6  
0.5  
0.4  
Gr een  
Super Red  
Hyper Red  
0.3  
0.2  
0.1  
0.0  
500  
550  
600  
650  
700  
750  
800  
Wavelengt h ( nm)  
V.4 Page: 6 of 8  
AMERICAN BRIGHT OPTOELECTRONICS CORP.  
AlInGaP DOMILED BL-PDx-xJS Series  
Fig.6 Recommended IR-reflow Soldering Profile (acc. to IPC 9501).  
Classification Reflow Profile (JEDEC J-STD-020B)  
275  
235-240oC  
250  
10 30s  
225  
Ramp-up  
3
o
C/sec  
200  
183 oC  
175  
60-150s  
150  
125  
Ramp-  
down  
100  
Preheat  
60-  
75  
50  
360s max  
25  
0
50  
100  
150  
200  
Time (sec)  
Fig.7 Recommended TTW Soldering Profile (acc. to CECC 00802).  
V.4 Page: 7 of 8  
AMERICAN BRIGHT OPTOELECTRONICS CORP.  
AlInGaP DOMILED BL-PDx-xJS Series  
Taping And Orientation:  
Reels come in quantity of 8000 units or 2000 units.  
Reel diameters are 330 mm and 180 mm respectively  
V.4 Page: 8 of 8  

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