BM-10K88ND [BRTLED]
super yellow chips, which are made from AlGaInP on GaAs substrate; 超级黄色片，这是在GaAs衬底制成的铝镓铟磷
| 型号： | BM-10K88ND |
| 厂家： | 
BRTLED |
| 描述： | super yellow chips, which are made from AlGaInP on GaAs substrate |
| 文件： | 总3页 (文件大小：541K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BM-10K88ND
●
Package Dimensions :
●
Features :
1. 1.26 inch (32.0mm) matrix height.
2. Dot size 3.00mm.
3. Low power requirement.
32.00(1.260)
24.00(.945)
4. Excellent characters appearance.
5. Solid state reliability.
32.00(1.260)
3.0(.118)
6. Multiplex drive , column anode com.
and row cathode com.
8.00(.315)
7. Single color available.
0.50(.020)
3.0(.118) MIN.
8. Categorized for luminous intensity.
9. Stackable vertically and horizontally.
2.54x7=17.78(.700)
●
Description :
1. The BM-10K88NDis a 32.0mm(1.26")
matrix height 8×8 dot matrix display.
2. This product use super yellow chips,
which are made from AlGaInP on
GaAs substrate.
Notes:
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(.01")unless otherwise
specified.
3. Specifications are subject to change without
notice.
3. This product have a black face and
white dots.
4. This product doesn't contain restriction
substance, comply ROHS standard.
● Internal Circuit Diagram :
佰鴻工業股份有限公司
http://www.brtled.com
Ver.1.0 Page 1 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BM-10K88ND
● Absolute Maximum Ratings(Ta=25℃)
Parameter
Power Dissipation Per Dot
Forward Current Per Dot
Peak Forward Current Per Dot
Symbol
Rating
Unit
mW
mA
mA
V
Pd
80
IF
30
150
IFP
(Duty 1/10, 1KHZ)
Reverse Voltage Per Dot
Operating Temperature
Storage Temperature
VR
5
-40℃~80℃
-40℃~85℃
260℃ For 5 Seconds
Topr
Tstg
Tsol
-
-
Soldering Temperature
(1/16" From Body)
-
● Electrical And Optical Characteristics(Ta=25℃)
Parameter
Forward Voltage Per Dot
Luminous Intensity Per Dot
Reverse Current Per Dot
Peak Wave Length
Symbol Condition Min.
Typ.
1.9
22.0
-
Max.
5.0
-
Unit
V
VF
Iv
IF=10mA
IF=10mA
VR=5V
-
-
mcd
µA
IR
-
-
100
-
λp
λd
IF=10mA
IF=10mA
590
587
nm
nm
nm
Dominant Wave Length
582
592
佰鴻工業股份有限公司
∆λ
Spectral Line Half-width
IF=10mA
-
15
-
http://www.brtled.com
Ver.1.0 Page 2 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BM-10K88ND
● Typical Electro-Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
Fig.1 Relative Radiant Intensity VS. Wavelength
1.0
0.5
0
500
530
560
590
620
650
680
Wavelength(nm)
Fig.3 Relative Luminous
Intensity VS.
Fig.2 Forward Current VS.
Forward Voltage
Ambient Temperature
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0
1
2
3
4
5
-40 -20
0
20
40
60
Ambient Temperature Ta( C)
Forward Voltage (V)
Fig.4 Relative Luminous
Intensity VS.
Fig.5 Forward Current
Derating Curve VS.
Ambient Temperature
Forward Current
50
40
3.0
佰鴻工業股份有限公司
2.0
30
20
http://www.brtled.com
1.0
10
0
0.0
20 40 60 80 100 120
10
20
30
40
50
Forward Current(mA)
Ambient Temperature Ta( C)
Ver.1.0 Page 3 of 3
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