BM-11EG88NI [BRTLED]

38mm (1.5) matrix height 8×8 dot matrix display; 38毫米( 1.5 )矩阵高度8 × 8点阵显示
BM-11EG88NI
型号: BM-11EG88NI
厂家: BRTLED    BRTLED
描述:

38mm (1.5) matrix height 8×8 dot matrix display
38毫米( 1.5 )矩阵高度8 × 8点阵显示

文件: 总3页 (文件大小:552K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BM-11EG88NI  
Package Dimensions :  
Features :  
1. 1.496 inch (38.00mm) matrix height.  
2. Dot size 3.7mm.  
3. Low power requirement.  
4. Excellent characters appearance.  
5. Solid state reliability.  
37.9(1.492)  
28.2(1.110)  
6. Multiplex drive , column cathode com.  
and row anode com.  
PIN1.  
3.7(.146)  
37.9(1.492)  
7. Duple color available.  
8. Categorized for luminous intensity.  
9. Stackable vertically and horizontally.  
10.30(.406)  
0.50(.020)  
3.0(.118) MIN.  
2.54x11=27.94(1.1)  
Description :  
1. The BM-11EG88NI is a 38mm (1.5")  
matrix height 8×8 dot matrix display.  
2. This product use hi-eff red chips and green  
chips, the hi-eff red chips are made from  
GaAsP on GaP substrate, the green chips  
are made from GaP on GaP substrate.  
3. This product have a gray face and  
white dots.  
Notes:  
1. All dimensions are in millimeters(inches).  
2. Tolerance is ±0.25mm(.01")unless otherwise  
specified.  
3. Specifications are subject to change without  
notice.  
Internal Circuit Diagram :  
Ver.1.0 Page 1 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BM-11EG88NI  
Absolute Maximum Ratings(Ta=25)  
Parameter  
Power Dissipation Per Dot  
Forward Current Per Dot  
Peak Forward Current Per Dot  
Reverse Voltage Per Dot  
Operating Temperature  
Storage Temperature  
Symbol  
Hi-Eff Red  
Green  
80  
Unit  
mW  
mA  
mA  
V
Pd  
80  
30  
IF  
30  
IFP  
150  
150  
(Duty 1/10, 1KHZ)  
VR  
5
-40~80℃  
-40~85℃  
Topr  
Tstg  
Tsol  
-
-
Soldering Temperature  
(1/16" From Body)  
260For 5 Seconds  
-
Electrical And Optical Characteristics(Ta=25)  
Hi-Eff Red  
Parameter  
Symbol Condition Min.  
Typ.  
1.9  
10.0  
-
Max.  
Unit  
V
Forward Voltage Per Dot  
Luminous Intensity Per Dot  
Reverse Current Per Dot  
Peak Wave Length  
VF  
Iv  
IF=10mA  
IF=10mA  
VR=5V  
-
2.5  
-
-
100  
-
mcd  
µA  
IR  
-
λp  
λd  
λ  
IF=10mA  
IF=10mA  
IF=10mA  
-
626  
-
640  
-
nm  
nm  
nm  
Dominant Wave Length  
Spectral Line Half-width  
636  
-
40  
Green  
Parameter  
Symbol Condition Min.  
Typ.  
2.1  
10.0  
-
Max.  
Unit  
V
Forward Voltage Per Dot  
Luminous Intensity Per Dot  
Reverse Current Per Dot  
Peak Wave Length  
VF  
Iv  
IF=10mA  
IF=10mA  
VR=5V  
-
2.5  
-
-
100  
-
mcd  
µA  
IR  
-
λp  
λd  
λ  
IF=10mA  
IF=10mA  
IF=10mA  
-
569  
-
568  
-
nm  
nm  
nm  
Dominant Wave Length  
Spectral Line Half-width  
574  
-
30  
Ver.1.0 Page 2 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BM-11EG88NI  
Typical Electro-Optical Characteristics Curves  
(25Ambient Temperature Unless Otherwise Noted)  
Fig.1 Relative Radiant Intensity VS. Wavelength  
(G) (E)  
1.0  
0.5  
0
530  
560  
590  
620  
650  
680  
710  
Wavelength(nm)  
Fig.3 Relative Luminous  
Intensity VS.  
Fig.2 Forward Current VS.  
Forward Voltage  
Ambient Temperature  
50  
40  
30  
20  
10  
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
(E)  
(G)  
1
2
3
4
5
-40 -20  
0
20  
40  
60  
Ambient Temperature Ta( C)  
Forward Voltage (V)  
Fig.4 Relative Luminous  
Intensity VS.  
Fig.5 Forward Current  
Derating Curve VS.  
Ambient Temperature  
Forward Current  
50  
3.0  
2.0  
1.0  
0.0  
40  
30  
20  
(G)  
(E)  
10  
0
20 40 60 80 100 120  
Ambient Temperature Ta( C)  
0
10  
20  
30  
40  
50  
Forward Current(mA)  
Ver.1.0 Page 3 of 3  

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