BM-40F58MD [BRTLED]
super red chips, which are made from AlGaAs on AlGaAs substrate.; 超级红筹股，这是对的AlGaAs基板制成的铝镓砷。
| 型号： | BM-40F58MD |
| 厂家： | 
BRTLED |
| 描述： | super red chips, which are made from AlGaAs on AlGaAs substrate. |
| 文件： | 总3页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BM-40F58MD
●
Package Dimensions :
●
Features :
1. 4.78 inch (121.50mm) matrix height.
2. Dot size 10.00mm.
3. Low power requirement.
121.50(4.783)
91.40(3.598)
4. Excellent characters appearance.
5. Solid state reliability.
+
PIN 1.
6. Multiplex drive , column anode com.
and row cathode com.
10.0(.394)
75.80(2.984)
13.30(.524)
7. Single color available.
0.80(.031)
6.1±0.5(.240±020)
8. Categorized for luminous intensity.
9. Stackable vertically and horizontally.
5.08x6=30.48(1.200)
●
Description :
1. The BM-40F58MD is a 121.50mm(4.78")
matrix height 5×8 dot matrix display.
2. This product use super red chips, which
are made from AlGaAs on AlGaAs substrate.
3. This product have a black face and
white dots.
Notes:
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(.01")unless otherwise
specified.
3. Specifications are subject to change without
notice.
4. This product doesn't contain restriction
substance, comply ROHS standard.
● Internal Circuit Diagram :
佰鴻工業股份有限公司
http://www.brtled.com
Ver.2.0 Page 1 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BM-40F58MD
● Absolute Maximum Ratings(Ta=25℃)
Parameter
Power Dissipation Per Dot
Forward Current Per Dot
Peak Forward Current Per Dot
Symbol
Rating
Unit
mW
mA
mA
V
Pd
160
IF
30
150
IFP
(Duty 1/10, 1KHZ)
Reverse Voltage Per Dot
Operating Temperature
Storage Temperature
VR
5
-40℃~80℃
-40℃~85℃
260℃ For 5 Seconds
Topr
Tstg
Tsol
-
-
Soldering Temperature
(1/16" From Body)
-
● Electrical And Optical Characteristics(Ta=25℃)
Parameter
Forward Voltage Per Dot
Luminous Intensity Per Dot
Reverse Current Per Dot
Symbol Condition Min.
Typ.
4.0
25.0
-
Max.
5.0
-
Unit
V
VF
Iv
IF=10mA
IF=10mA
VR=5V
-
-
-
mcd
µA
IR
100
佰鴻工業股份有限公司
λp
λd
Peak Wave Length
IF=10mA
IF=10mA
-
660
-
-
648
-
nm
nm
nm
Dominant Wave Length
638
http://www.brtled.com
∆λ
Spectral Line Half-width
IF=10mA
-
20
Ver.2.0 Page 2 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BM-40F58MD
● Typical Electro-Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
Fig.1 Relative Radiant Intensity VS. Wavelength
1.0
0.5
0
570
600
630
660
690
720
750
Wavelength(nm)
Fig.3 Relative Luminous
Intensity VS.
Fig.2 Forward Current VS.
Forward Voltage
Ambient Temperature
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0
1
2
3
4
5
-40 -20
0
20
40
60
Ambient Temperature Ta( C)
Forward Voltage (V)
Fig.4 Relative Luminous
Intensity VS.
Fig.5 Forward Current
Derating Curve VS.
Ambient Temperature
Forward Current
50
40
3.0
2.0
佰鴻工業股份有限公司
30
20
1.0
10
http://www.brtled.com
0
0.0
20 40 60 80 100 120
10
20
30
40
50
Forward Current(mA)
Ambient Temperature Ta( C)
●
Ver.2.0 Page 3 of 3
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