BM-40J57MD [BRTLED]

super orange chips, which are made from AlGaInP on GaAs substrate; 超级橙色芯片,这是在GaAs衬底制成的铝镓铟磷
BM-40J57MD
型号: BM-40J57MD
厂家: BRTLED    BRTLED
描述:

super orange chips, which are made from AlGaInP on GaAs substrate
超级橙色芯片,这是在GaAs衬底制成的铝镓铟磷

光电
文件: 总3页 (文件大小:259K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BM-40J57MD  
Package Dimensions :  
Features :  
1. 4.2 inch (106.20mm) matrix height.  
2. Dot size 10.0mm.  
3. Low power requirement.  
4. Excellent characters appearance.  
5. Solid state reliability.  
6. Multiplex drive , column anode com. and  
row cathode com.  
7. Single color available.  
8. Categorized for luminous intensity.  
9. Stackable vertically and horizontally.  
Description :  
1. The BM-40J57MD is a 106.20mm(4.2")  
matrix height 5×7 dot matrix display.  
2. This product use super orange chips,  
which are made from AlGaInP on GaAs  
substrate.  
Notes:  
1. All dimensions are in millimeters(inches).  
2. Tolerance is ±0.25mm(.01")unless otherwise  
specified.  
3. Specifications are subject to change without  
notice.  
3. This product have a black face and  
white dots.  
4. This product doesn't contain restriction  
substance, comply ROHS standard.  
Internal Circuit Diagram :  
佰鴻工業股份有限公司  
http://www.brtled.com  
Ver.Page 1 of 3  
1.1  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BM-40J57MD  
Absolute Maximum Ratings(Ta=25)  
Parameter  
Power Dissipation Per Dot  
Forward Current Per Dot  
Peak Forward Current Per Dot  
Symbol  
Rating  
Unit  
mW  
mA  
mA  
V
Pd  
160  
IF  
30  
150  
IFP  
(Duty 1/10, 1KHZ)  
Reverse Voltage Per Dot  
Operating Temperature  
Storage Temperature  
VR  
5
-40~80℃  
-40~85℃  
260For 5 Seconds  
Topr  
Tstg  
Tsol  
-
-
Soldering Temperature  
(1/16" From Body)  
-
Electrical And Optical Characteristics(Ta=25)  
Parameter  
Forward Voltage Per Dot  
Luminous Intensity Per Dot  
Reverse Current Per Dot  
Peak Wave Length  
Symbol Condition Min.  
Typ.  
4.0  
32.0  
-
Max.  
5.0  
-
Unit  
V
VF  
Iv  
IF=10mA  
IF=10mA  
VR=5V  
-
-
mcd  
µA  
IR  
-
-
100  
-
λp  
λd  
IF=10mA  
IF=10mA  
620  
-
nm  
nm  
nm  
Dominant Wave Length  
610  
620  
佰鴻工業股份有限公司  
λ  
Spectral Line Half-width  
IF=10mA  
-
17  
-
http://www.brtled.com  
Ver.1.0 Page 2 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BM-40J57MD  
Typical Electro-Optical Characteristics Curves  
(25Ambient Temperature Unless Otherwise Noted)  
Fig.1 Relative Radiant Intensity VS. Wavelength  
1.0  
0.5  
0
530  
560  
590  
620  
650  
680  
710  
Wavelength(nm)  
Fig.3 Relative Luminous  
Intensity VS.  
Fig.2 Forward Current VS.  
Forward Voltage  
Ambient Temperature  
50  
40  
30  
20  
10  
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
1
2
3
4
5
-40 -20  
0
20  
40  
60  
Ambient Temperature Ta( C)  
Forward Voltage (V)  
Fig.4 Relative Luminous  
Intensity VS.  
Fig.5 Forward Current  
Derating Curve VS.  
Ambient Temperature  
Forward Current  
50  
40  
2.0  
1.5  
佰鴻工業股份有限公司  
30  
1.0  
20  
0.5  
10  
http://www.brtled.com  
0
0
20 40 60 80 100 120  
10  
20  
30  
40  
50  
Ambient Temperature Ta( C)  
Forward Current(mA)  
Ver.1.0 Page 3 of 3  

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