BPT-NP23C1 [BRTLED]
SIDE- LOOK PACKAGE PHOTOTRANSISTOR; 副作用LOOK包装PHOTOTRANSISTOR型号: | BPT-NP23C1 |
厂家: | BRTLED |
描述: | SIDE- LOOK PACKAGE PHOTOTRANSISTOR |
文件: | 总3页 (文件大小:221K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BPT-NP23C1
SIDE- LOOK PACKAGE
PHOTOTRANSISTOR
● Package Dimensions:
● Features
1. Wide range of collector current.
2. High sensitivity.
4.5(.177) 0.1
1.52(.060)
1.5(.059)
3. Low cost plastic package.
1.2(.047) 0.1
R0.76(.030)
4. Lens Appearance: Water Clear.
5. This product doesn't contain restriction
5.7(.224)
substance, comply ROHS standard
.
16.5(0.650)
0.40(.160)
1
1.0(.04)MIN.
2
0.40(.160)
2.54(.10) NOM.
● Description
1.Emitter
The BPT-NP23C1 is a NPN silicon phototransistor
mounted in a lensed ,water clear plastic package .
The lensing effect of the package allows an
acceptance half view angle of 50∘that is
measured from the optical axis to the half
power point .
2.Collector
NOTES:
1.All dimensions are in millimeters (inches).
2.Tolerance is ±0.25mm (0.01’) unless otherwise specified.
3.Lead spacing is measured where the leads emerge from the package
4.Specifications are subject to change without notice
● Absolute Maximum Ratings(Ta=25℃)
Parameter
Power Dissipation
Maximum Rating
Unit
mW
V
100
30
5
Collector- Emitter Voltage
Emitter- Collector Voltage
Operating Temperature
Storage Temperature Range
Lead Soldering Temperature
V
-45℃~+85℃
-45℃~+100℃
260℃ for 5 seconds
Rev:2.2 Page1 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BPT-NP23C1
● Electrical Characteristics (TA=25℃ unless otherwise noted)
PARAMETER
Collector- Emitter
SYMBOL MIN
TYP
MAX
UNITS
TEST CONDITIONS
IC=1 mA Ee=0mW/cm2
V(BR)CEO
V(BR)ECO
VCE(SAT)
Tr
30
5
-
-
V
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector- Emitter
Saturation Voltage
-
-
V
V
IR=0.1mA Ee=0 mW/cm2
-
-
-
0.5
-
IC=0.1 mA Ee=1.0 mW/cm2
Rise Time
15
VCE =5V RL=1KΩ
μS
F=100HZ
Fall Time
Tf
Id
-
-
-
15
-
-
100
-
Collector Dark Current
Light Current
nA
VCE=10V Ee=0 mW/cm2
VCE=5V Ee=1.0mW/cm2
IC (ON)
12
mA
● Typical Optical-Electrical Characteristic Curves
FIG .2 Powe r Diss ipat ion Vs.
Ambient Temperature
FIG.1 Dark Current Vs.
(uA)
Ambient Temperature
(mW)
120
10000
1000
100
100
80
60
10
1
40
20
0.1
0.01
0
(° C)
0
20
40
60
80
100 120
-25
0
25
50
75
100
125 (° C)
Ambient Temperature
Ambient Temperature
FIG .4 Relativ e Collec tor Current Vs.
Irradiance
FIG.3 Rise And Fall Time Vs.
Load Resistance
(us)
20
16
12
8
Vcc=5V
2.5
2.0
1.5
1.0
0.5
0
Vce=5V
F=100Hz
Tf
Tr
4
(mW/c m )
0
0.5
1.5
2.0 2.5
3.0
1.0
0
0.2
(K )
0
0.4
0.6
0.8
1.0
Irradiance
Load Resis tance
FIG .5 Relativ e Response vs.
Wavelength
1.0
0.8
0.6
0.4
0.2
0.0
(nm)
1000 1100
500 600
700
800
900
Wavelength
Rev:2.2
Page2 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BPT-NP23C1
● Tapping and packaging specifications(Units: mm)
● Packaging Bag Dimensions
Notes:
1、1000pcs per bag, 8Kpcs per box.
2、All dimensions are in millimeters(inches).
3、Specifications are subject to change without notice.
Rev:2.2
Page3 of 3
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