BPT-NP23C1 [BRTLED]

SIDE- LOOK PACKAGE PHOTOTRANSISTOR; 副作用LOOK包装PHOTOTRANSISTOR
BPT-NP23C1
型号: BPT-NP23C1
厂家: BRTLED    BRTLED
描述:

SIDE- LOOK PACKAGE PHOTOTRANSISTOR
副作用LOOK包装PHOTOTRANSISTOR

文件: 总3页 (文件大小:221K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BPT-NP23C1  
SIDE- LOOK PACKAGE  
PHOTOTRANSISTOR  
Package Dimensions:  
Features  
1. Wide range of collector current.  
2. High sensitivity.  
4.5(.177) 0.1  
1.52(.060)  
1.5(.059)  
3. Low cost plastic package.  
1.2(.047) 0.1  
R0.76(.030)  
4. Lens Appearance: Water Clear.  
5. This product doesn't contain restriction  
5.7(.224)  
substance, comply ROHS standard  
.
16.5(0.650)  
0.40(.160)  
1
1.0(.04)MIN.  
2
0.40(.160)  
2.54(.10) NOM.  
Description  
1.Emitter  
The BPT-NP23C1 is a NPN silicon phototransistor  
mounted in a lensed ,water clear plastic package .  
The lensing effect of the package allows an  
acceptance half view angle of 50that is  
measured from the optical axis to the half  
power point .  
2.Collector  
NOTES:  
1.All dimensions are in millimeters (inches).  
2.Tolerance is ±0.25mm (0.01’) unless otherwise specified.  
3.Lead spacing is measured where the leads emerge from the package  
4.Specifications are subject to change without notice  
Absolute Maximum Ratings(Ta=25)  
Parameter  
Power Dissipation  
Maximum Rating  
Unit  
mW  
V
100  
30  
5
Collector- Emitter Voltage  
Emitter- Collector Voltage  
Operating Temperature  
Storage Temperature Range  
Lead Soldering Temperature  
V
-45~+85℃  
-45~+100℃  
260for 5 seconds  
Rev:2.2 Page1 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BPT-NP23C1  
Electrical Characteristics (TA=25unless otherwise noted)  
PARAMETER  
Collector- Emitter  
SYMBOL MIN  
TYP  
MAX  
UNITS  
TEST CONDITIONS  
IC=1 mA Ee=0mW/cm2  
V(BR)CEO  
V(BR)ECO  
VCE(SAT)  
Tr  
30  
5
-
-
V
Breakdown Voltage  
Emitter-Collector  
Breakdown Voltage  
Collector- Emitter  
Saturation Voltage  
-
-
V
V
IR=0.1mA Ee=0 mW/cm2  
-
-
-
0.5  
-
IC=0.1 mA Ee=1.0 mW/cm2  
Rise Time  
15  
VCE =5V RL=1K  
μS  
F=100HZ  
Fall Time  
Tf  
Id  
-
-
-
15  
-
-
100  
-
Collector Dark Current  
Light Current  
nA  
VCE=10V Ee=0 mW/cm2  
VCE=5V Ee=1.0mW/cm2  
IC (ON)  
12  
mA  
Typical Optical-Electrical Characteristic Curves  
FIG .2 Powe r Diss ipat ion Vs.  
Ambient Temperature  
FIG.1 Dark Current Vs.  
(uA)  
Ambient Temperature  
(mW)  
120  
10000  
1000  
100  
100  
80  
60  
10  
1
40  
20  
0.1  
0.01  
0
C)  
0
20  
40  
60  
80  
100 120  
-25  
0
25  
50  
75  
100  
125 (° C)  
Ambient Temperature  
Ambient Temperature  
FIG .4 Relativ e Collec tor Current Vs.  
Irradiance  
FIG.3 Rise And Fall Time Vs.  
Load Resistance  
(us)  
20  
16  
12  
8
Vcc=5V  
2.5  
2.0  
1.5  
1.0  
0.5  
0
Vce=5V  
F=100Hz  
Tf  
Tr  
4
(mW/c m )  
0
0.5  
1.5  
2.0 2.5  
3.0  
1.0  
0
0.2  
(K )  
0
0.4  
0.6  
0.8  
1.0  
Irradiance  
Load Resis tance  
FIG .5 Relativ e Response vs.  
Wavelength  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
(nm)  
1000 1100  
500 600  
700  
800  
900  
Wavelength  
Rev:2.2  
Page2 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BPT-NP23C1  
Tapping and packaging specifications(Units: mm)  
Packaging Bag Dimensions  
Notes:  
11000pcs per bag, 8Kpcs per box.  
2All dimensions are in millimeters(inches).  
3Specifications are subject to change without notice.  
Rev:2.2  
Page3 of 3  

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