BH616UV1611 [BSI]

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit; 超低功耗/高速CMOS SRAM 1M X 16位/ 2M ×8位
BH616UV1611
型号: BH616UV1611
厂家: BRILLIANCE SEMICONDUCTOR    BRILLIANCE SEMICONDUCTOR
描述:

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit
超低功耗/高速CMOS SRAM 1M X 16位/ 2M ×8位

静态存储器
文件: 总12页 (文件大小:149K)
下载:  下载PDF数据表文档文件

BH616UV1611_08

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit

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26 BSI

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0 BSI

BH616UV1611AIG55

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit

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19 BSI

BH616UV1611AIG70

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit

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18 BSI

BH616UV1611AIP55

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit

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18 BSI

BH616UV1611AIP70

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit

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21 BSI

BH616UV1611BI55

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit

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19 BSI

BH616UV1611BI70

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit

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10 BSI

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0 BSI

BH616UV1611BIG55

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit

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15 BSI

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0 BSI

BH616UV1611BIG70

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit

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21 BSI

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0 BSI

BH616UV1611BIP55

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit

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18 BSI

BH616UV1611BIP70

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit

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16 BSI